SIGC158T170R3EX1SA2 [INFINEON]

Insulated Gate Bipolar Transistor;
SIGC158T170R3EX1SA2
型号: SIGC158T170R3EX1SA2
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor

文件: 总5页 (文件大小:116K)
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SIGC15T60

IGBT3 Chip

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33 INFINEON

SIGC15T60E

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC15T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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11 INFINEON

SIGC15T60SE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC15T60SX1SA1

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 3.92 X 3.88 MM, DIE-2

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0 INFINEON

SIGC15T60UN

High Speed IGBT Chip in NPT-technology positive temperature coefficient

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13 INFINEON

SIGC15T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC16T120C

IGBT Chip in NPT-technology

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11 INFINEON

SIGC16T120CL

IGBT Chip in NPT-technology

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7 INFINEON

SIGC16T120CS

IGBT Chip in NPT-technology

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3 INFINEON

SIGC16T120CS

IGBT Chip in NPT-technology

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4 INFINEON

SIGC16T120CS

Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, 4.04 X 4.00 MM, DIE-2

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0 INFINEON

SIGC185T170R2C

IGBT Chip in NPT-technology

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20 INFINEON

SIGC185T170R2CX1SA3

Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, 13.56 X 13.56 MM, DIE-10

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0 INFINEON

SIGC185T350R2CH

Insulated Gate Bipolar Transistor, 50A I(C), 3500V V(BR)CES, N-Channel, DIE

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0 INFINEON