SIGC28T60S [INFINEON]

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3;
SIGC28T60S
型号: SIGC28T60S
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3

栅 功率控制 晶体管
文件: 总4页 (文件大小:79K)
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SIGC28T60SE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC28T60SX1SA2

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3

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0 INFINEON

SIGC28T60X1SA4

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 6.57 X 4.20 MM, DIE-3

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0 INFINEON

SIGC28T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC32T120R3

IGBT3 Chip

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17 INFINEON

SIGC32T120R3E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC32T120R3L

IGBT3 Chip

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10 INFINEON

SIGC32T120R3LE

暂无描述

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0 INFINEON

SIGC39T60

IGBT3 Chip

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4 INFINEON

SIGC39T60E

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC39T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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5 INFINEON

SIGC39T60X1SA1

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, 6.59 X 5.91 MM, DIE-3

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0 INFINEON

SIGC39T65E

Insulated Gate Bipolar Transistor

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-
0 INFINEON

SIGC40T60R3

IGBT3 Chip

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6 INFINEON

SIGC40T65R3E

Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel

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0 INFINEON