SKB04N60ATMA1 [INFINEON]

Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;


型号：	SKB04N60ATMA1
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 栅瞄准线功率控制晶体管
文件：	总13页 (文件大小：598K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKB04N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled

Diode

 75% lower E_offcompared to previous generation

combined with low conduction losses

 Short circuit withstand time – 10 s

 Designed for frequency inverters for washing machines,

fans, pumps and vacuum cleaners

 NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-263-3-2

 Very soft, fast recovery anti-parallel Emitter Controlled

Diode

 Qualified according to JEDEC¹for target applications

 Pb-free lead plating; RoHS compliant

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Marking Package

SKB04N60

600V

2.3V

K04N60 PG-TO-263-3-2

150C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25C

V_{C E}

I_C

600

9.4

4.9

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area V_CE 600V, T_j 150C

Diode forward current

I_{Cp ul s}

I_F

T_C= 25C

T_C= 100C

Diode pulsed current, t_plimited by T_jmax

I_{Fp ul s}

V_{G E}

t_SC

20

Gate-emitter voltage

Short circuit withstand time²

V_GE= 15V, V_CC 600V, T_j 150C

Power dissipation

s

P_{t ot}

T_C= 25C

Operating junction and storage temperature

Soldering temperature (reflow soldering, MSL1)

T_j, T_stg

-55...+150

260

C

T_s

°C

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 12.06.2013

SKB04N60

Thermal Resistance

Parameter

Symbol Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJC D}

R_{t hJA}

2.5

4.5

K/W

Diode thermal resistance,

junction – case

SMD version, device on PCB¹⁾

Electrical Characteristic, at T_j= 25 C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR )C ES}

600

V_{G E}=0V, I_C=500A

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=4A

T_j=25C

1.7

2.0

2.3

2.4

2.8

T_j=150C

Diode forward voltage

V_F

V_{G E}=0V, I_F=4A

T_j=25C

1.2

1.4

1.8

1.25

1.65

T_j=150C

Gate-emitter threshold voltage

V_{G E( t h)}

I_{CE S}

I_C=200A,V_{C E}=V_GE

V_{C E}=600V,V_GE=0V

T_j=25C

Zero gate voltage collector current

A

500

T_j=150C

Gate-emitter leakage current

Transconductance

I_{GE S}

g_fs

V_{C E}=0V,V_{G E}=20V

V_{C E}=20V, I_C=4A

100

3.1

Dynamic Characteristic

Input capacitance

C_{i ss}

V_{C E}=25V,

V_{G E}=0V,

f=1MHz

264

317

Output capacitance

C_{os s}

C_{rs s}

Reverse transfer capacitance

Gate charge

Q_{Gat e}

V_{C C}=480V, I_C=4A

V_{G E}=15V

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Short circuit collector current²⁾

I_{C( SC )}

V_{G E}=15V,t_SC10s

V_{C C} 600V,

T_j 150C

¹⁾Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70m thick) copper area for

collector connection. PCB is vertical without blown air.

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.4 12.06.2013

SKB04N60

Switching Characteristic, Inductive Load, at T_j=25 C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=25C,

t_{d( o n)}

t_r

t_{d( of f)}

t_f

V_{C C}=400V,I_C=4A,

V_{G E}=0/15V,

R_G=67,

Turn-off delay time

Fall time

237

284

1 )

L_=180nH,

C_=180pF

Turn-on energy

E_{o n}

E_{o ff}

E_{t s}

0.070

0.061

0.131

0.081 mJ

0.079

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.160

t_rr

t_S

180

T_j=25C,

V_R=200V, I_F=4A,

di_F/dt=200A/s

t_F

165

130

2.5

180

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_{rr m}

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

A/s

Switching Characteristic, Inductive Load, at T_j=150 C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=150C

t_{d( o n)}

t_r

t_{d( of f)}

t_f

V_{C C}=400V,I_C=4A,

V_{G E}=0/15V,

R_G=67,

Turn-off delay time

Fall time

264

317

125

1 )

L_=180nH,

104

C_=180pF

Turn-on energy

E_{o n}

E_{o ff}

E_{t s}

0.115

0.111

0.226

0.132 mJ

0.144

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.277

t_rr

t_S

230

T_j=150C

V_R=200V, I_F=4A,

di_F/dt=200A/s

t_F

227

300

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_{rr m}

Diode peak rate of fall of reverse

recovery current during t_b

di_rr/dt

200

A/s

¹⁾Leakage inductance L_and Stray capacity C_due to dynamic test circuit in Figure E.

Rev. 2.4 12.06.2013

SKB04N60

t_p=2s

15s

I_c

10A

20A

10A

50s

T_C=80°C

200s

1ms

.1A

01A

T_C=110°C

I_c

10V

100V

1000V

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25C, T_j 150C)

(T_j 150C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 67)

60W

50W

40W

30W

20W

10W

12A

10A

25°C

50°C

75°C 100°C 125°C

25°C

50°C

75°C 100°C 125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

Figure 4. Collector current as a function of

case temperature

(T_j 150C)

(V_GE 15V, T_j 150C)

Rev. 2.4 12.06.2013

SKB04N60

15A

12A

15A

12A

V_GE=20V

15V

13V

11V

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

Figure 6. Typical output characteristics

(T_j= 25C)

(T_j= 150C)

14A

4.0V

T_j=+25°C

12A

10A

3.5V

I_C= 8A

-55°C

+150°C

3.0V

I_C= 4A

2.5V

2.0V

1.5V

1.0V

10V

-50°C

0°C

50°C 100°C 150°C

V_GE, GATE-EMITTER VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

(V_CE= 10V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(V_GE= 15V)

Rev. 2.4 12.06.2013

SKB04N60

t_d(off)

t_f

100ns

t_f

t_d(on)

t_r

10ns

0

10A

50

100

150

200

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, R_G= 67,

Dynamic test circuit in Figure E)

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, I_C= 4A,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.0V

t_d(off)

100ns

t_f

max.

typ.

t_d(on)

t_r

min.

10ns

0°C

50°C

100°C

150°C

-50°C

0°C

50°C 100°C 150°C

T_j, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 4A, R_G= 67,

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(I_C= 0.2mA)

Dynamic test circuit in Figure E)

Rev. 2.4 12.06.2013

SKB04N60

0.6mJ

0.5mJ

0.4mJ

0.3mJ

0.2mJ

0.1mJ

0.0mJ

0.4mJ

0.3mJ

0.2mJ

0.1mJ

0.0mJ

*) E_onand E_tsinclude losses

due to diode recovery.

*) E_onand E_tsinclude losses

due to diode recovery.

E_ts*

E_on

E_off

E_on

10A

0

50

100

150

200

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, R_G= 67,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_j= 150C, V_CE= 400V,

V_GE= 0/+15V, I_C= 4A,

Dynamic test circuit in Figure E)

0.3mJ

*) E_onand E_tsinclude losses

due to diode recovery.

0.2mJ

E_ts*

0.1mJ

E_on

E_off

0.0mJ

0°C

50°C

100°C

150°C

T_j, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 4A, R_G= 67,

Dynamic test circuit in Figure E)

Rev. 2.4 12.06.2013

SKB04N60

25V

20V

15V

10V

C_iss

100pF

120V

480V

C_oss

C_rss

10pF

0nC

10nC

20nC

30nC

10V

20V

30V

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical gate charge

(I_C= 4A)

Figure 17. Typical capacitance as a

function of collector-emitter voltage

(V_GE= 0V, f = 1MHz)

25s

70A

60A

50A

40A

30A

20A

10A

20s

15s

10s

5s

0s

10V

11V

12V

13V

14V

15V

10V

12V

14V

16V

18V

20V

V_GE, GATE-EMITTER VOLTAGE

Figure 18. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE= 600V, start at T_j= 25C)

Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage

(V_CE 600V, T_j= 150C)

Rev. 2.4 12.06.2013

SKB04N60

500ns

400ns

300ns

200ns

100ns

0ns

560nC

480nC

400nC

320nC

240nC

160nC

80nC

I_F= 8A

I_F= 4A

I_F= 2A

0nC

40A/s

120A/s 200A/s 280A/s 360A/s

40A/s

120A/s 200A/s 280A/s 360A/s

di_F/dt, DIODE CURRENT SLOPE

Figure 20. Typical reverse recovery time as

a function of diode current slope

(V_R= 200V, T_j= 125C,

Figure 21. Typical reverse recovery charge

as a function of diode current slope

(V_R= 200V, T_j= 125C,

Dynamic test circuit in Figure E)

400A/s

320A/s

240A/s

160A/s

80A/s

0A/s

I_F= 8A

I_F= 4A

I_F= 2A

40A/s

120A/s 200A/s 280A/s 360A/s

di_F/dt, DIODE CURRENT SLOPE

40A/s

120A/s

200A/s

280A/s

360A/s

di_F/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery current

as a function of diode current slope

(V_R= 200V, T_j= 125C,

Figure 23. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(V_R= 200V, T_j= 125C,

Dynamic test circuit in Figure E)

Rev. 2.4 12.06.2013

SKB04N60

2.0V

1.5V

1.0V

I_F= 8A

I_F= 4A

150°C

100°C

25°C

-55°C

0.0V

0.5V

1.0V

1.5V

2.0V

-40°C 0°C

40°C 80°C 120°C

V_F, FORWARD VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 24. Typical diode forward current as

a function of forward voltage

Figure 25. Typical diode forward voltage as

a function of junction temperature

D=0.5

10⁰K/W

0.2

0.1

10⁰K/W

0.1

0.05

10^-1K/W

0.02

0.05

R , ( K / W )

0.128

0.387

0.346

1.360

 , ( s )  

R , ( K / W )

0.815

0.698

0.941

0.046

 , ( s )  

0.085

0.02

0.0407

0.01

7.30*10^-3

4.69*10^-3

7.34*10^-4

5.96*10^-5

5.24*10^-3

4.97*10^-4

4.31*10^-5

10^-1K/W

0.01

single pulse

10^-2K/W

2.280

R₁

R₂

R₁

R₂

C₁=₁/R₁C₂=₂/R₂

single pulse

C₁=₁/R₁C₂=₂/R₂

10^-2K/W

1µs

10^-3K/W

1µs

10µs 100µs 1ms 10ms 100ms

10µs 100µs 1ms 10ms 100ms 1s

t_p, PULSE WIDTH

Figure 26. Diode transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Figure 28. IGBT transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Rev. 2.4 12.06.2013

SKB04N60

PG-TO263-3-2

Rev. 2.4 12.06.2013

SKB04N60

i,v

=t +t

S F

di /dt

r r

=Q +Q

r r

10% I

r r m

di /dt

r r

r r m

90% I

Figure C. Definition of diodes

switching characteristics

₁

₂

_n

r₁

r ₂

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L_=180nH

and Stray capacity C_=180pF.

Figure B. Definition of switching losses

Rev. 2.4 12.06.2013

SKB04N60

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable

to assume that the health of the user or other persons may be endangered.

Rev. 2.4 12.06.2013

SKB04N60ATMA1 [INFINEON]

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