SLE4442 [INFINEON]
intelligent 256-byte EEPROM; 智能256字节的EEPROM
| 型号： | SLE4442 |
| 厂家： | 
Infineon |
| 描述： | intelligent 256-byte EEPROM |
| 文件： | 总35页 (文件大小：994K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ICs for Chip Cards
Intelligent 256-Byte EEPROM
SLE 4432/SLE 4442
Data Sheet 07.95
Edition 07.95
This edition was realized using the software
‚
system FrameMaker .
Published by Siemens AG,
Bereich Halbleiter, Marketing-
Kommunikation, Balanstraße 73,
81541 München
©
Siemens AG 1995.
All Rights Reserved.
Attention please!
As far as patents or other rights of third par-
ties are concerned, liability is only assumed
for components, not for applications, pro-
cesses and circuits implemented within com-
ponents or assemblies.
The information describes the type of compo-
nent and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design
reserved.
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Group Offices in Germany or the Siemens
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may contain dangerous substances. For in-
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contact your nearest Siemens Office, Semi-
conductor Group.
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turer.
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Components used in life-support devices
or systems must be expressly authorized
for such purpose!
1
Critical components of the Semiconductor
Group of Siemens AG, may only be used in
2
life-support devices or systems with the ex-
press written approval of the Semiconductor
Group of Siemens AG.
1
2
A critical component is a component used
in a life-support device or system whose
failure can reasonably be expected to
cause the failure of that life-support device
or system, or to affect its safety or effec-
tiveness of that device or system.
Life support devices or systems are in-
tended (a) to be implanted in the human
body, or (b) to support and/or maintain
and sustain human life. If they fail, it is rea-
sonable to assume that the health of the
user may be endangered.
ICs for Chip Cards
Intelligent 256-Byte EEPROM
SLE 4432/SLE 4442
Data Sheet 07.95
SLE 4432/SLE4442
Revision History:
Original Version 07.95
Previous Releases: 01.94
Page
Subjects (changes since last revision)
Editorial changes
®
This edition was realized using the software system FrameMaker
Important: For further information please contact:
Siemens Semiconductor Group in Munich, Germany,
Key Account Service Chip Card ICs and Identsystem ICs,
Tel.: + 49 89 4144-4362, Fax + 49 89 4144-2360
The supply of this component does not include a licence for its use in
smart card applications. This licence is due to: INNOVATRON Patents
137 Boulevard de Sébastopol, 75002 Paris, France, Fax + 33 1 40 13 39 09
General Information
Contents
1
Page
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
2.1
2.2
2.2.1
2.2.2
2.3
2.3.1
2.3.2
2.3.3
2.3.4
2.3.5
2.3.6
2.3.7
2.4
2.5
2.6
2.7
2.8
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Memory Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Transmission Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset and Answer-to-Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operational Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Read Main Memory (SLE 4432 and SLE 4442) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Protection Memory (SLE 4432 and SLE 4442) . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Update Main Memory (SLE 4432 and SLE 4442) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Write Protection Memory (SLE 4432 and SLE 4442) . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Read Security Memory (SLE 4442 only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Update Security Memory (SLE 4442 only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Compare Verification Data (SLE 4442 only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PSC Verification (SLE 4442 only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Reset Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Break . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Failures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Coding of the Chip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3
3.1
3.2
3.2.1
3.2.2
3.2.3
3.2.4
3.3
Operational Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operation Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4
Package and Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Semiconductor Group
3
Published by Semiconductor Group
Siemens Aktiengesellschaft
Ordering No. B116-H6695-G1-X-7600
Printed in Germany
DA 07952.
Intelligent 256-Byte EEPROM with Write Protect Function
SLE 4432
SLE 4442
Intelligent 256-Byte EEPROM with Write Protect Function
and Programmable Security Code (PSC)
Features
● 256 × 8-bit EEPROM organization
● Byte-wise addressing
● Irreversible byte-wise write protection of lowest
32 addresses (Byte 0 ... 31)
● 32 × 1-bit organization of protection memory
● Two-wire link protocol
● End of processing indicated at data output
● Answer-to-Reset acc. to ISO standard 7816-3
● Programming time 2.5 ms per byte for both erasing
and writing
M2.2
● Minimum of 104 write/erase cycles1)
● Data retention for minimum of ten years1)
● Contact configuration and serial interface in accordance
with ISO standard 7816 (synchronous transmission)
Additional Feature of SLE 4442
● Data can only be changed after entry of the correct 3-byte
programmable security code (security memory)
Type
Ordering Code
on request
on request
on request
on request
Package
SLE 4432 M2.2
SLE 4432 C
SLE 4442 M2.2
SLE 4442 C
Wire-Bonded Module M2.2
Chip
Wire-Bonded Module M2.2
Chip
1) Values are temperature dependent, for further information please refer to your Siemens sales
office.
Semiconductor Group
5
07.95
SLE 4432
SLE 4442
1
Pin Configuration
(top view)
M2.2 (Card Contacts)
Pin Definitions and Functions
Card Contact
Symbol
VCC
RST
CLK
N.C.
GND
N.C.
I/O
Function
C1
C2
C3
C4
C5
C6
C7
C8
Supply voltage
Reset
Clock input
Not connected
Ground
Not connected
Bidirectional data line (open drain)
Not connected
N.C.
SLE 4432/SLE 4442 comes as a M2.2 wire-bonded module for embedding in plastic cards or as
a die for customer packaging.
Semiconductor Group
6
SLE 4432
SLE 4442
2
Functional Description
Block Diagram
Semiconductor Group
7
SLE 4432
SLE 4442
2.1 Memory Overview
Figure 1
Memory Overwiew
SLE 4432
The SLE 4432 consists of 256 x 8 bit EEPROM main memory and a 32-bit protection memory with
PROM functionality. The main memory is erased and written byte by byte. When erased, all 8 bits
of a data byte are set to logical one. When written, the information in the individual EEPROM cells
is, according to the input data, altered bit by bit to logical zeros (logical AND between the old and the
new data in the EEPROM). Normally a data change consists of an erase and write procedure. It
depends on the contents of the data byte in the main memory and the new data byte whether the
EEPROM is really erased and/or written. If none of the 8 bits in the addressed byte requires a zero-
to-one transition the erase access will be suppressed. Vice versa the write access will be
suppressed if no one-to-zero transition is necessary. The write and the erase operation takes at
least 2.5 ms each.
Each of the first 32 bytes can be irreversibly protected against data change by writing the
corresponding bit in the protection memory. Each data byte in this address range is assigned to one
bit of the protection memory and has the same address as the data byte in the main memory which
it is assigned to. Once written the protection bit cannot be erased (PROM).
Semiconductor Group
8
SLE 4432
SLE 4442
SLE 4442
Additionally to the above functions the SLE 4442 provides a security code logic which controls the
write/erase access to the memory. For this purpose the SLE 4442 contains a 4-byte security
memory with an Error Counter EC (bit 0 to bit 2) and 3 bytes reference data. These 3 bytes as a
whole are called Programmable Security Code (PSC). After power on the whole memory, except for
the reference data, can only be read. Only after a successful comparison of verification data with the
internal reference data the memory has the identical access functionality of the SLE 4432 until the
power is switched off. After three successive unsuccessful comparisons the Error Counter blocks
any subsequent attempt, and hence any possibility to write and erase.
2.2 Transmission Protocol
The transmission protocol is a two wire link protocol between the interface device IFD and the
integrated circuit IC. It is identical to the protocol type “S = A”. All data changes on I/O are initiated
by the falling edge on CLK.
The transmission protocol consists of the 4 modes:
– Reset and Answer-to-Reset
– Command Mode
– Outgoing Data Mode
– Processing Mode
Operational modes
Note: The I/O pin is open drain and therefore requires an external pull up resistor to achieve a high
level.
Semiconductor Group
9
SLE 4432
SLE 4442
2.2.1 Reset and Answer-to-Reset
Answer-to-Reset takes place according to ISO standard 7816-3 (ATR). The reset can be given at
any time during operation. In the beginning, the address counter is set to zero together with a clock
pulse and the first data bit (LSB) is output to I/O when RST is set from level H to level L. Under a
continuous input of additional 31 clock pulses the contents of the first 4 EEPROM addresses is read
out. The 33rd clock pulse switches I/O to high impedance Z and finishes the ATR procedure.
Answer-to-Reset
(Hex)
Byte 1
Byte 2
Byte 3
Byte 4
DO7 … DO0
DO15 … DO8
DO23 … DO16
DO31 … DO24
Figure 2
Reset and Answer-to-Reset
2.2.2 Operational Modes
Command Mode
After the Answer-to-Reset the chip waits for a command. Every command begins with a start
condition, includes a 3 bytes long command entry followed by an additional clock pulse and ends
with a stop condition.
– Start condition: Falling edge on I/O during CLK in level H
– Stop condition: Rising edge on I/O during CLK in level H
After the reception of a command there are two possible modes:
– Outgoing data mode for reading
– Processing mode for writing and erasing
Semiconductor Group
10
SLE 4432
SLE 4442
Outgoing Data Mode
In this mode the IC sends data to the IFD. The first bit becomes valid on I/O after the first falling edge
on CLK. After the last data bit an additional clock pulse is necessary in order to set I/O to high
impedance Z and to prepare the IC for a new command entry. During this mode any start and stop
condition is discarded.
Processing Mode
In this mode the IC processes internally. The IC has to be clocked continuously until I/O, which was
switched to level L after the first falling edge of CLK, is set to high impedance level Z. Any start and
stop condition is discarded during this mode.
Note: The RST line is low during the modes mentioned above. If RST is set to high during the CLK
low level any operation is aborted and I/O is switched to high impedance Z (Break).
Figure 3
Operational Modes
Semiconductor Group
11
SLE 4432
SLE 4442
2.3 Commands
Command Format
Each command consists of three bytes:
MSB
Control
LSB MSB
Address
LSB MSB
Data
LSB
&ꢀ &ꢁ &ꢂ &ꢃ &ꢄ &ꢅ &ꢆ &ꢇ %ꢀ %ꢁ %ꢂ %ꢃ %ꢄ %ꢅ %ꢆ %ꢇ (ꢀ (ꢁ (ꢂ (ꢃ (ꢄ (ꢅ (ꢆ (ꢇ
Beginning with the control byte LSB is transmitted first.
Figure 4
Command Mode
The SLE 4432 provides 4 commands which are listed in table 1. Additionally to these commands
the SLE 4442 provides 3 commands which can be found in table 2.
Semiconductor Group
12
SLE 4432
SLE 4442
Table 1
Byte 1
Byte 2
Byte 3
Operation
Mode
Control
Address Data
B7 B6 B5 B4 B3 B2 B1 B0 A7-A0
D7-D0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
1
0
1
0
0
1
1
0
0
0
0
0
0
0
0
address no effect READ MAIN
MEMORY
outgoing
data
address input data UPDATE MAIN
MEMORY
processing
no effect no effect READ PROTECTION outgoing
MEMORY
data
address input data WRITE
processing
PROTECTION
MEMORY
Table 2
SLE 4442 only
0
0
0
0
0
0
1
1
1
1
1
1
0
1
0
0
0
0
0
0
1
1
1
1
no effect no effect READ SECURITY
MEMORY
outgoing
data
address input data UPDATE SECURITY processing
MEMORY
address input data COMPARE
VERIFICATION DATA
processing
Semiconductor Group
13
SLE 4432
SLE 4442
2.3.1 Read Main Memory (SLE 4432 and SLE 4442)
The command reads out the contents of the main memory (with LSB first) starting at the given byte
address (N = 0…255) up to the end of the memory. After the command entry the IFD has to supply
sufficient clock pulses. The number of clocks is m = (256 – N) × 8 + 1. The read access to the main
memory is always possible.
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0) –
–
–
–
:
–
–
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31) –
:
:
–
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3 (D7 … D0)
Reference Data Byte 2 (D7 … D0)
Reference Data Byte 1 (D7 … D0)
Error Counter
2
1
0
Command: READ MAIN MEMORY
Control
Address
Data
B7
0
B6
0
B5
1
B4
1
B3
0
B2
0
B1
0
B0 A7…A0
D7…D0
No effect
No effect
Binary
0
Address
Hexadecimal
30H
00H…FFH
Figure 5
Read Main Memory
Semiconductor Group
14
SLE 4432
SLE 4442
2.3.2 Read Protection Memory (SLE 4432 and SLE 4442)
The command transfers the protection bits under a continuous input of 32 clock pulses to the output.
I/O is switched to high impedance Z by an additional pulse. The protection memory can always be
read, and indicates the data bytes of the main memory protected against changing.
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0) –
–
–
–
:
–
–
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31) –
:
:
–
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3 (D7 … D0)
Reference Data Byte 2 (D7 … D0)
Reference Data Byte 1 (D7 … D0)
Error Counter
2
1
0
Command: READ PROTECTION MEMORY
Control
Address
Data
B7
0
B6
0
B5
1
B4
1
B3
0
B2
1
B1
0
B0 A7…A0
D7…D0
No effect
No effect
Binary
0
No effect
No effect
Hexadecimal
34H
Figure 6
Read Protection Memory
Semiconductor Group
15
SLE 4432
SLE 4442
2.3.3 Update Main Memory (SLE 4432 and SLE 4442)
The command programs the addressed EEPROM byte with the data byte transmitted. Depending
on the old and new data, one of the following sequences will take place during the processing mode:
– erase and write
(5 ms)
corresponding to m = 255 clock pulses
– write without erase (2.5 ms) corresponding to m = 124 clock pulses
– erase without write (2.5 ms) corresponding to m = 124 clock pulses
(All values at 50 kHz clock rate.)
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0) –
–
–
–
:
–
–
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31) –
:
:
–
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3 (D7 … D0)
Reference Data Byte 2 (D7 … D0)
Reference Data Byte 1 (D7 … D0)
Error Counter
2
1
0
Command: UPDATE MAIN MEMORY
Control
Address
Data
B7
0
B6
0
B5
1
B4
1
B3
1
B2
0
B1
0
B0 A7…A0
D7…D0
Input data
Input data
Binary
0
Address
Hexadecimal
38H
00H…FFH
Semiconductor Group
16
SLE 4432
SLE 4442
Figure 7
Erase and Write Main Memory
Figure 8
Erase or Write Main Memory
If the addressed byte is protected against changes (indicated by the associated written protection
bit) the I/O is set to high impedance after the clock number 2 of the processing.
Semiconductor Group
17
SLE 4432
SLE 4442
2.3.4 Write Protection Memory (SLE 4432 and SLE 4442)
The execution of this command contains a comparison of the entered data byte with the assigned
byte in the EEPROM. In case of identity the protection bit is written thus making the data information
unchangeable. If the data comparison results in data differences writing of the protection bit will be
suppressed. Execution times and required clock pulses see UPDATE MAIN MEMORY.
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0) –
–
–
–
:
–
–
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31) –
:
:
–
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3 (D7 … D0)
Reference Data Byte 2 (D7 … D0)
Reference Data Byte 1 (D7 … D0)
Error Counter
2
1
0
Command: WRITE PROTECTION MEMORY
Control
Address
Data
B7
0
B6
0
B5
1
B4
1
B3
1
B2
1
B1
0
B0 A7…A0
D7…D0
Input data
Input data
Binary
0
Address
Hexadecimal
3CH
00H…1FH
Semiconductor Group
18
SLE 4432
SLE 4442
2.3.5 Read Security Memory (SLE 4442 only)
Similar to the read command for the protection memory this command reads out the 4 bytes of the
security memory. The number of clock pulses during the outgoing data mode is 32. I/O is switched
to high impedance Z by an additional pulse. Without a preceeding successful verification of the PSC
the output of the reference bytes is suppressed, that means I/O outputs state L for the reference
data bytes.
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0) –
–
–
–
:
–
–
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31) –
:
:
–
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3(D7 … D0)
Reference Data Byte 2(D7 … D0)
Reference Data Byte 1(D7 … D0)
2
1
0
Error Counter
(0,0,0,0,0,D2,D1,D0)
Command: READ SECURITY MEMORY
Control
B4 B3
Address
Data
B7
0
B6
0
B5
1
B2
0
B1
0
B0 A7…A0
D7…D0
No effect
No effect
Binary
1
0
1
No effect
No effect
Hexadecimal
31H
Figure 9
Read Security Memory
Semiconductor Group
19
SLE 4432
SLE 4442
2.3.6 Update Security Memory (SLE 4442 only)
Regarding the reference data bytes this command will only be executed if a PSC has been
successfully verified before. Otherwise only each bit of the error counter (Address 0) can be written
from “1” to “0”. The execution times and the required clock pulses are the same as described under
UPDATE MAIN MEMORY.
Command: UPDATE SECURITY MEMORY
Control
B4 B3
Address
Data
B7
0
B6
0
B5
1
B2
0
B1
0
B0 A7…A0
D7…D0
Input data
Input data
Binary
1
1
1
Address
Hexadecimal
39H
00H…03H
2.3.7 Compare Verification Data (SLE 4442 only)
This command can only be executed in combination with an update procedure of the error counter
(see PSC verification). The command compares one byte of the entered verification data byte with
the corresponding reference data byte. For this procedure clock pulses are necessary during the
processing mode.
Command: COMPARE VERIFICATION DATA
Control
B4 B3
Address
Data
B7
0
B6
0
B5
1
B2
0
B1
1
B0 A7…A0
D7…D0
Input data
Input data
Binary
1
0
1
Address
Hexadecimal
33H
00H…03H
Figure 10
Compare Verification Data
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SLE 4442
2.4 PSC Verification (SLE 4442 only)
The SLE 4442 requires a correct verification of the Programmable Security Code PSC stored in the
Security Memory for altering data if desired.
The following procedure has to be carried out exactly as described. Any variation leads to a failure,
so that a write/erase access will not be achieved. As long as the procedure has not been
successfully concluded the error counter bits can only be changed from “1” to “0” but not erased.
At first an error counter bit has to be written to “0” by an UPDATE command (see figure 11) followed
by three COMPARE VERIFICATION DATA commands beginning with byte 1 of the reference data.
A successful conclusion of the whole procedure can be recognized by being able to erase the error
counter which is not automatically erased. Now write/erase access to all memory areas is possible
as long as the operating voltage is applied. In case of error the whole procedure can be repeated as
long as erased counter bits are available. Having been enabled, the reference data are allowed to
be altered like any other information in the EEPROM.
The following table gives an overview of the necessary commands for the PSC verification. The
sequence of the shaded commands is mandatory.
Command
Control
B7…B0
31H
Address
A7…A0
No effect
00H
Data
Remark
D7…D0
No effect
Input data
Read security Memory
Check Error Counter
Update Security Memory
39H
Write free bit in Error
Counter input data:
0000 0ddd binary
Compare Verification Data
Compare Verification Data
Compare Verification Data
Update Security Memory
Read Security Memory
33H
33H
33H
39H
31H
01H
Input data
Input data
Input data
FFH
Reference Data Byte 1
Reference Data Byte 2
Reference Data Byte 3
Erase Error Counter
Check Error Counter
02H
03H
00H
No effect
No effect
As shipped, the PSC is programmed with a code according to individual agreement with the
customer. Thus, knowledge of this code is indispensable to alter data.
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SLE 4432
SLE 4442
Figure 11
Verification Procedure
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SLE 4432
SLE 4442
2.5 Reset Modes
Reset and Answer-to-Reset (compare 2.2.1)
Power on Reset
After connecting the operating voltage to VCC, I/O is high impedance Z. By all means, a read
access to any address or an Answer-to-Reset must be carried out before data can be altered.
2.6 Break
If RST is set to high during CLK in state L any operation is aborted and I/O is switched to high
impedance Z. Minimum duration of tRES = 5 µs is necessary to trigger a defined valid reset. After
Break the chip is ready for further operations.
2.7 Failures
Behavior in case of failures:
In case of one of the following failures, the chip sets the I/O to high impedance Z after 8 clock pulses
at the latest.
Possible failures:
– Comparison unsuccessful
– Wrong command
– Wrong number of command clock pulses
– Write/erase access to already protected bytes
– Rewriting and erasing of a bit in the protection memory
2.8 Coding of the Chip
Due to security purposes every chip is irreversibly coded by a scheme. By this way fraud and
misuse is excluded. The relevant data are programmed in the memory area from address 0 to 31.
Afterwards the associated protection bits are programmed. As an example, figures 12 and 13 show
ATR and Directory Data of Structure 1. When delivered, ATR header, ICM and ICT are
programmed. Siemens programs also the AID. The AID (Application IDentifier) consists of 5 byte
RID (Registered application provider IDentifier) administered by a national registration authority and
of up to 11 byte PIX (Proprietary application Identifier eXtension). There are two possibilities: the
customers AID or Siemens AID (only for sample quantities). Depending on the agreement between
the customer and Siemens ICCF can be also programmed before delivery.
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SLE 4432
SLE 4442
Figure 12
Synchronous Transmission
ATR and Directory Data of Structure 1
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SLE 4432
SLE 4442
Figure 13
Answer-to-Reset for Synchronous Transmission
Coding of Structure 1
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SLE 4432
SLE 4442
3
Operational Information
3.1 Memory Map
Address Main Memory
(decimal)
Protection Memory
Security Memory
(only SLE 4442)
255
:
Data Byte 255 (D7 … D0)
:
32
31
:
Data Byte 32 (D7 … D0)
Data Byte 31 (D7 … D0) Protection Bit 31 (D31)
:
:
3
Data Byte 3 (D7 … D0)
Data Byte 2 (D7 … D0)
Data Byte 1 (D7 … D0)
Data Byte 0 (D7 … D0)
Protection Bit 3 (D3)
Protection Bit 2 (D2)
Protection Bit 1 (D1)
Protection Bit 0 (D0)
Reference Data Byte 3 (D7 … D0)
Reference Data Byte 2 (D7 … D0)
Reference Data Byte 1 (D7 … D0)
Error Counter (0,0,0,0,0,D2,D1,D0)
2
1
0
The Data bytes 0 to 31 can be protected against further changes by programming the associated
protection bit 0 to 31. The SLE 4442 allows data changing only after correct verification of the
Reference Data bytes. Reading of the Data bytes and of the associated protection bits is always
possible.
3.2 Electrical Characteristics
3.2.1 Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
6.0
Supply voltage
VCC
VI
– 0.3
– 0.3
– 40
V
Input voltage (any pin)
Storage temperature
Power dissipation
6.0
V
Tstg
Ptot
125
70
°C
mW
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this data
sheet is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability, including EEPROM data retention and write/erase endurance.
In the operating range the functions given in the circuit description are fulfilled.
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SLE 4432
SLE 4442
3.2.2 Operation Range
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
5.0
3
max.
Supply voltage
VCC
ICC
TA
4.75
5.25
10
V
–
V
–
Supply current
mA
°C
CC = 5 V
Ambient temperature
0
70
3.2.3 DC Characteristics
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
High level input voltage VIH
3.5
VCC
V
–
(I/O, CLK, RST)
Low level input voltage VIL
0
0.8
V
–
(I/O, CLK, RST)
High level input current IIH
(I/O, CLK, RST)
50
µA
mA
µA
pF
VIH = 5 V
Low level output
current (I/O)
IOL
IOH
CI
1
VOL = 0.4 V, open drain
High level output
current (I/O)
50
10
VOH = 5 V, open drain
Input capacitance
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SLE 4432
SLE 4442
3.2.4 AC Characteristics
The AC characteristics refer to the timing diagrams in the following. VIHmin and VILmax are reference
levels for measuring timing of signals.
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
4
typ.
max.
RST High to CLK Setup time
CLK Low to RST Hold time
t10
t11
µs
µs
µs
µs
µs
kHz
µs
µs
µs
µs
µs
µs
µs
4
RST High time (address reset) t12
20
50
RST Low to I/O Valid time
RST Low to CLK Setup time
CLK Frequency
t13
t14
fCLK
tR
2.5
4
7
50
1
CLK Rise time
CLK Fall time
tF
1
CLK High time
t15
t16
t17
t18
t19
9
9
CLK Low time
CLK Low to I/O Valid time
Reset time for Break
2.5
5
RST High to I/O Clear time
(Break)
2.5
I/O High time (Start Condition) t1
10
4
µs
µs
µs
CLK High to I/O Hold time
t2
t3
I/O Low to CLK Hold time
(Start Condition)
4
I/O Setup to CLK High time
CLK Low to I/O Hold time
t4
t5
t6
1
1
4
µs
µs
µs
CLK High to I/O Clear time
(Stop Condition)
CLK Low to I/O Valid time
CLK Low to I/O Valid time
CLK Low to I/O Clear time
Erase time
t7
2.5
2.5
2.5
µs
µs
µs
ms
ms
µs
t8
t9
tER
tWR
tPOR
2.5
2.5
f
f
CLK = 50 kHz
CLK = 50 kHz
Write time
Power on reset time
100
Note: The listed characteristics are ensured over the operating range of the integrated circuit.
Typical characteristics specify mean values expected over the production spread. If not
otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage.
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SLE 4442
3.3 Timing Diagrams
Figure 14
Reset and Answer-to-Reset
Figure 15
Command Mode
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SLE 4442
Figure 16
Outgoing Data Mode
Figure 17
Processing Mode
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SLE 4442
Figure 18
Break
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SLE 4442
4
Package and Dimensions
Chip and Package Outlines
Wire-Bonded Module M2.2
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SLE 4432
SLE 4442
Wafer Size: 5"
Scribe Line: 80 µm
Pad Size: 110 × 110 µm2
Stepping Size: 1820 × 1850 µm2
Chip Dimensions
Semiconductor Group
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