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SMBT3904 / MMBT3904 [INFINEON]

NPN 硅开关晶体管  ;
SMBT3904 / MMBT3904
型号： SMBT3904 / MMBT3904
厂家： Infineon    Infineon
描述：

NPN 硅开关晶体管  

开关 小信号双极晶体管
文件： 总8页 (文件大小：78K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SMBT3904S  
NPN Silicon Switching Transistor Array  
4
High DC current gain: 0.1mA to 100mA  
Low collector-emitter saturation voltage  
Two ( galvanic) internal isolated Transistors  
with good matching in one package  
5
6
3
2
Complementary type: SMBT3906S (PNP)  
1
C1  
6
B2  
5
E2  
4
VPS05604  
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07178  
Type  
Marking  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SMBT3904S  
s1A  
SOT363  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
40  
60  
V
V
V
V
CEO  
CBO  
EBO  
6
200  
mA  
mW  
°C  
I
C
250  
Total power dissipation, T = 115 °C  
P
tot  
S
Junction temperature  
Storage temperature  
150  
T
j
-65 ... 150  
T
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
140  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-30-2001  
SMBT3904S  
Electrical Characteristics at T =25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
40  
60  
6
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
-
-
-
-
-
-
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 1 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
-
E
C
Collector cutoff current  
= 30 V, I = 0  
-
50  
nA  
I
CBO  
V
CB  
E
DC current gain 1)  
I = 100 µA, V = 1 V  
-
h
FE  
40  
70  
-
-
-
-
-
-
C
CE  
I = 1 mA, V = 1 V  
-
C
CE  
I = 10 mA, V = 1 V  
100  
60  
300  
C
CE  
I = 50 mA, V = 1 V  
-
-
C
CE  
I = 100 mA, V = 1 V  
30  
C
CE  
Collector-emitter saturation voltage1)  
I = 10 mA, I = 1 mA  
V
V
CEsat  
BEsat  
-
-
-
-
0.2  
0.3  
C
B
I = 50 mA, I = 5 mA  
C
B
Base-emitter saturation voltage 1)  
I = 10 mA, I = 1 mA  
V
0.65  
-
-
-
0.85  
0.95  
C
B
I = 50 mA, I = 5 mA  
C
B
1) Pulse test: t < 300 s; D < 2%  
2
Nov-30-2001  
SMBT3904S  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
Transition frequency  
300  
-
-
-
-
-
-
-
-
-
4
MHz  
pF  
f
T
I = 10 mA, V = 20 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 5 V, f = 1 MHz  
-
-
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
8
C
eb  
V
EB  
Short-circuit input impedance  
I = 1 mA, V = 10 V, f = 1 kHz  
1
10  
8
h
k
11e  
C
CE  
-4  
Open-circuit reverse voltage transf.ratio  
I = 1 mA, V = 10 V, f = 1 kHz  
0.5  
100  
1
10  
h
12e  
C
CE  
Short-circuit forward current transf.ratio  
I = 1 mA, V = 10 V, f = 1 kHz  
400  
40  
5
-
h
21e  
C
CE  
Open-circuit output admittance  
h
S
22e  
I = 1 mA, V = 10 V, f = 1 kHz  
C
CE  
Noise figure  
-
dB  
F
I = 100 µA, V = 5 V, R = 1 k ,  
C
CE  
S
f = 1 kHz, f = 200 Hz  
Delay time  
-
-
-
-
35  
35  
ns  
t
d
V
V
= 3 V, I = 10 mA, I = 1 mA,  
CC  
C
B1  
= 0.5 V  
BE(off)  
Rise time  
t
r
V
V
= 3 V, I = 10 mA, I = 1 mA,  
CC  
C
B1  
= 0.5 V  
BE(off)  
Storage time  
= 3 V, I = 10 mA, I =I = 1mA  
-
-
-
-
200  
50  
t
stg  
V
CC  
C
B1 B2  
Fall time  
= 3 V, I = 10 mA, I =I = 1mA  
t
f
V
CC  
C
B1 B2  
3
Nov-30-2001  
SMBT3904S  
Test circuit  
Delay and rise time  
+3.0 V  
275 Ω  
300 ns  
D = 2%  
+10.9 V  
10 kΩ  
0
C
-0.5 V  
<4.0 pF  
<1.0 ns  
EHN00061  
Storage time and fall time  
+3.0 V  
10 < t1 < 500 µs  
275 Ω  
t1  
D = 2%  
+10.9 V  
10 kΩ  
0
C
<4.0 pF  
-9.1  
V
1N916  
<1.0 ns  
EHN00062  
4
Nov-30-2001  
SMBT3904S  
Total power dissipation P = f (T )  
tot  
S
300  
mW  
200  
150  
100  
50  
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T
S
Permissible Pulse Load  
Permissible Pulse Load R  
= f (t )  
thJS  
p
P
/ P  
= f (t )  
totmax  
totDC  
p
10 3  
K/W  
10 3  
-
10 2  
D = 0  
10 2  
10 1  
10 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.5  
0.2  
0.1  
0.2  
0.5  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
5
Nov-30-2001  
SMBT3904S  
DC current gain h = f (I )  
Saturation voltage I = f (V  
, V  
)
FE  
C
C
BEsat CEsat  
V
= 10V, normalized  
h
= 10  
FE  
CE  
EHP00765  
EHP00756  
10 1  
2
mA  
102  
h FE  
Ι C  
5
5
125 C  
25 C  
VBE  
VCE  
100  
5
101  
5
-55 C  
10-1  
100  
10 -1  
5 10 0  
5 10 1  
mA 10 2  
2
0
0.2  
0.4  
0.6  
0.8  
1.0 V 1.2  
Ι C  
VBE sat ,VCE sat  
Short-circuit forward current  
transfer ratio h = f(I )  
Open-circuit output admittance  
h
= f (I )  
21e  
C
22e  
C
V
= 10V, f = 1MHz  
V
= 10V, f = 1MHz  
CE  
CE  
103  
EHP00759  
EHP00760  
102  
µs  
h21e  
h22e  
5
5
102  
5
101  
5
100  
101  
10 -1  
5
10 0  
mA 10 1  
10 -1  
5
10 0  
mA 10 1  
Ι C  
Ι C  
6
Nov-30-2001  
SMBT3904S  
Delay time t = f (I )  
Storage time t = f(I )  
stg C  
d
C
Rise time t = f (I )  
r
C
EHP00762  
EHP00761  
103  
ns  
103  
ns  
tr  
t
ts  
,
d
25 C  
125 C  
t r  
t d  
hFE= 20  
hFE = 10  
10  
102  
101  
100  
102  
101  
100  
V
CC = 3 V  
hFE= 20  
10  
40 V  
15 V  
V
BE = 2 V  
0 V  
10 0  
5 10 1  
5 10 2  
mA 10 3  
10 0  
5 10 1  
5 10 2  
mA 10 3  
Ι C  
Ι C  
Fall time t = f (I )  
Rise time t = f (I )  
f
C
r
C
EHP00764  
EHP00763  
103  
ns  
103  
ns  
tr  
tf  
25 C  
25 C  
125 C  
125 C  
VCC = 40 V  
hFE = 10  
VCC = 40 V  
hFE = 20  
102  
101  
100  
102  
101  
100  
hFE = 10  
10 0  
5 10 1  
5 10 2  
mA 10 3  
Ι C  
10 0  
5 10 1  
5 10 2  
mA 10 3  
Ι C  
7
Nov-30-2001  
SMBT3904S  
Input impedance  
Open-circuit reverse voltage  
transfer ratio h = f (I )  
h
= f (I )  
11e  
C
12e  
C
V
= 10V, f = 1kHz  
V
= 10V, f = 1kHz  
CE  
CE  
EHP00757  
EHP00758  
10-3  
102  
kΩ  
h12e  
h 11e  
101  
5
10-4  
100  
5
5
10-5  
10-1  
10 -1  
5
10 0  
mA 10 1  
Ι C  
10-1  
5
100  
mA  
Ι C  
101  
8
Nov-30-2001  

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