SMBT3904PN_12 [INFINEON]
NPN / PNP Silicon Switching Transistor Array;
| 型号： | SMBT3904PN_12 |
| 厂家： | 
Infineon |
| 描述： | NPN / PNP Silicon Switching Transistor Array |
| 文件： | 总9页 (文件大小：853K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBT3904...PN
NPN / PNP Silicon Switching Transistor Array
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN / PNP
transistor in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3904PN
SMBT3904UPN
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
SMBT3904PN
SMBT3904UPN
Marking
s3P
s3P
Pin Configuration
1=E 2=B 3=C 4=E 5=B 6=C SOT363
1=E 2=B 3=C 4=E 5=B 6=C SC74
Package
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
Value
40
40
6
200
Unit
V
V
V
V
CEO
CBO
EBO
mA
I
C
mW
Total power dissipation-
P
tot
T ≤ 115 °C, SMBT3904PN
250
330
150
S
T ≤ 105 °C, SMBT3904UPN
S
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
2012-08-21
1
SMBT3904...PN
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
SMBT3904PN
SMBT3904UPN
≤ 140
≤ 135
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
40
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
40
6
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector-base cutoff current
I
-
50
nA
-
CBO
V
= 30 V, I = 0
CB
E
2)
DC current gain
h
FE
I = 100 µA, V = 1 V
40
70
100
60
-
-
-
-
-
-
-
C
CE
I = 1 mA, V = 1 V
C
CE
I = 10 mA, V = 1 V
300
-
-
C
CE
I = 50 mA, V = 1 V
C
CE
I = 100 mA, V = 1 V
30
C
CE
2)
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
V
V
CEsat
-
-
-
-
0.25
0.4
C
B
I = 50 mA, I = 5 mA
C
B
2)
Base emitter saturation voltage
I = 10 mA, I = 1 mA
V
BEsat
0.65
-
-
-
0.85
0.95
C
B
I = 50 mA, I = 5 mA
C
B
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
Pulse test: t < 300µs; D < 2%
2
2012-08-21
2
SMBT3904...PN
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
250
-
-
-
-
MHz
Transition frequency
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
-
-
3.5 pF
10
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Delay time
t
-
-
-
-
35
35
ns
d
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Rise time
t
r
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Storage time
= 3 V, I = 10 mA, I = I = 1 mA
t
-
-
-
-
-
-
225
75
5
stg
V
CC
C
B1
B2
Fall time
= 3 V, I = 10 mA, I = I = 1 mA
t
f
V
CC
C
B1
B2
dB
Noise figure
I = 100 µA, V = 5 V, f = 1 kHz,
F
C
CE
∆ f = 200 Hz, R = 1 kΩ
S
2012-08-21
3
SMBT3904...PN
DC current gain h = ƒ(I )
Saturation voltage I = ƒ(V
; V
)
CEsat
FE
C
C
BEsat
V
= 1 V, normalized
h
= 10
CE
FE
10 3
EHP00756
2
mA
102
Ι C
125 °C
25 °C
5
VBE
VCE
10 2
-55 °C
101
5
10 1
100
10 -5
10 -4
10 -3
10 -2
10 -1
0
mA
0
0.2
0.4
0.6
0.8
1.0 V 1.2
I
C
VBE sat ,VCE sat
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
SMBT3904PN
SMBT3904UPN
300
mW
360
mW
250
225
200
175
150
125
100
75
300
270
240
210
180
150
120
90
50
60
25
30
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
2012-08-21
4
SMBT3904...PN
Permissible Pulse Load R
SMBT3904PN
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
SMBT3904PN
10 3
K/W
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
SMBT3904UPN
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
SMBT3904UPN
10 2
10 3
K/W
D=0
0.005
0.01
0.02
0.05
0.1
10 2
0.2
10 1
0.5
D=0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
0
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2012-08-21
5
SMBT3904...PN
Delay time t = ƒ(I )
Storage time t = ƒ(I )
d
C
stg
C
Rise time t = ƒ(I )
r
C
EHP00762
EHP00761
103
ns
103
ns
tr
t
ts
,
d
25 C
125 C
t r
t d
hFE= 20
10
hFE = 10
102
101
100
102
101
100
V
CC = 3 V
hFE= 20
10
40 V
15 V
V
BE = 2 V
0 V
10 0
5
10 1
5 10 2
mA 10 3
10 0
5 10 1
5 10 2
mA 10 3
Ι C
Ι C
Fall time t = ƒ(I )
Rise time t = ƒ(I )
f
C
r
C
EHP00764
EHP00763
103
ns
103
ns
tr
tf
25 C
25 C
125 C
125 C
VCC = 40 V
hFE = 10
VCC = 40 V
hFE = 20
102
101
100
102
101
100
hFE = 10
10 0
5 10 1
5 10 2
mA 10 3
10 0
5
10 1
5 10 2
mA 10 3
Ι C
Ι C
2012-08-21
6
Package SC74
SMBT3904...PN
Package Outline
0.2
2.9
B
1.1 MAX.
(2.25)
+0.1
0.15
(0.35)
-0.06
6
1
5
2
4
3
+0.1
A
0.35
0.95
-0.05
M
0.2
B 6x
Pin 1
marking
0.1 MAX.
M
0.2
A
1.9
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
3.15
1.15
Pin 1
marking
2012-08-21
7
Package SOT363
SMBT3904...PN
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2012-08-21
8
SMBT3904...PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2012-08-21
9
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