SMBT3904UPNE6327HTSA1 [INFINEON]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN;
| 型号： | SMBT3904UPNE6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：863K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBT3904...MMBT3904
NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
• Complementary types: SMBT3906... MMBT3906
• SMBT3904S: For orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
s1A
s1A
Pin Configuration
1=B 2=E 3=C
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Package
SOT23
SMBT3904/MMBT3904
SMBT3904S
-
-
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
Value
40
60
6
200
Unit
V
V
V
V
CEO
CBO
EBO
mA
mV
I
C
Total power dissipation-
P
tot
T ≤ 71°C, SOT23, SMBT3904
330
250
150
S
T ≤ 115°C, SOT363, SMBT3904S
S
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
SMBT3904/MMBT3904
SMBT3904S
≤ 240
≤ 140
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2012-08-21
1
SMBT3904...MMBT3904
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
40
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
60
6
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector-base cutoff current
I
-
50
nA
-
CBO
V
= 30 V, I = 0
CB
E
1)
DC current gain
h
FE
I = 100 µA, V = 1 V
40
70
100
60
-
-
-
-
-
-
-
C
CE
I = 1 mA, V = 1 V
C
CE
I = 10 mA, V = 1 V
300
-
-
C
CE
I = 50 mA, V = 1 V
C
CE
I = 100 mA, V = 1 V
30
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
V
V
CEsat
-
-
-
-
0.2
0.3
C
B
I = 50 mA, I = 5 mA
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 1 mA
V
BEsat
0.65
-
-
-
0.85
0.95
C
B
I = 50 mA, I = 5 mA
C
B
1
Pulse test: t < 300µs; D < 2%
2012-08-21
2
SMBT3904...MMBT3904
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
300
-
-
-
-
MHz
Transition frequency
f
T
I = 10 mA, V = 20 V, f = 100 MHz
C
CE
-
-
3.5 pF
8
Collector-base capacitance
= 5 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Delay time
t
-
-
-
-
35
35
ns
d
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Rise time
t
r
V
V
= 3 V, I = 10 mA, I = 1 mA,
CC
C
B1
= 0.5 V
BE(off)
Storage time
= 3 V, I = 10 mA, I = I = 1 mA
t
-
-
-
-
-
-
200
50
5
stg
V
CC
C
B1
B2
Fall time
= 3 V, I = 10 mA, I = I = 1 mA
t
f
V
CC
C
B1
B2
dB
Noise figure
I = 100 µA, V = 5 V, f = 1 kHz,
F
C
CE
∆ f = 200 Hz, R = 1 kΩ
S
2012-08-21
3
SMBT3904...MMBT3904
Test circuits
Delay and rise time
+3.0 V
275 Ω
300 ns
D = 2%
+10.9 V
10 kΩ
0
C
-0.5 V
<4.0 pF
<1.0 ns
EHN00061
Storage and fall time
+3.0 V
10 < t1 < 500 µs
D = 2%
275 Ω
t 1
+10.9 V
10 kΩ
0
C
<4.0 pF
-9.1 V
1N916
<1.0 ns
EHN00062
2012-08-21
4
SMBT3904...MMBT3904
DC current gain h = ƒ(I )
Saturation voltage I = ƒ(V
; V
)
CEsat
FE
C
C
BEsat
V
= 1 V, normalized
h
= 10
CE
FE
10 3
EHP00756
2
mA
102
Ι C
125 °C
5
VBE
VCE
25 °C
10 2
-55 °C
101
5
10 1
100
10 -5
10 -4
10 -3
10 -2
10 -1
0 0
mA
0
0.2
0.4
0.6
0.8
1.0 V 1.2
I
C
VBE sat ,VCE sat
Collector-base capacitance C = ƒ(V )
Total power dissipation P = ƒ(T )
tot S
cb
CB
Emitter-base capacitance C = ƒ(V )
SMBT3904/MMBT3904
eb
EB
360
mW
9
pF
300
270
240
210
180
150
120
90
7
6
5
4
3
2
1
0
CEB
60
CCB
30
0
A
0
4
8
12
16
22
0
15 30 45 60 75 90 105 120
150
°C
T
S
V
(V
CB EB
2012-08-21
5
SMBT3904...MMBT3904
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
SMBT3904S
SMBT3904/ MMBT3904
10 3
K/W
300
mW
250
225
200
175
150
125
100
75
10 2
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
50
25
10 -1
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
0
15 30 45 60 75 90 105 120
150
T
t
p
S
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
SMBT3904S
= ƒ (t )
thJS
p
P
totmax totDC
p
SMBT3904/MMBT3904
EHP00935
10 3
K/W
103
Ptotmax
PtotDC
t p
t p
T
D
=
T
10 2
10 1
10 0
10 -1
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.5
0.2
0.2
0.5
0.1
101
5
0.05
0.02
0.01
0.005
D = 0
100
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10-6 10-5 10-4 10-3 10-2
10-1
t p
s
100
s
t
p
2012-08-21
6
SMBT3904...MMBT3904
Permissible Pulse Load
/P = ƒ(t )
Delay time t = ƒ(I )
d C
P
Rise time t = ƒ(I )
totmax totDC
p
r
C
SMBT3904S
10 3
EHP00761
103
ns
-
tr
t
d
,
t r
t d
hFE = 10
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
102
101
100
V
CC = 3 V
40 V
15 V
0.2
0.5
10 1
V
BE = 2 V
0 V
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
10 0
5
10 1
5 10 2
mA 10 3
Ι C
t
p
Storage time t = ƒ(I )
Fall time t = ƒ(I )
f C
stg
C
EHP00762
EHP00763
103
ns
103
ns
ts
tf
25 C
125 C
25 C
125 C
hFE= 20
10
VCC = 40 V
hFE = 20
102
101
100
102
101
100
hFE= 20
10
hFE = 10
10 0
5 10 1
5 10 2
mA 10 3
Ι C
10 0
5 10 1
5 10 2
mA 10 3
Ι C
2012-08-21
7
SMBT3904...MMBT3904
Rise time t = ƒ(I )
r
C
EHP00764
103
ns
tr
25 C
125 C
VCC = 40 V
hFE = 10
102
101
100
10 0
5 10 1
5 10 2
mA 10 3
Ι C
2012-08-21
8
Package SOT23
SMBT3904...MMBT3904
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2012-08-21
9
Package SOT363
SMBT3904...MMBT3904
Package Outline
0.2
2
0.1
0.9
+0.1
-0.05
6x
0.2
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
2
Pin 1
marking
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
1.1
2.15
Pin 1
marking
2012-08-21
10
SMBT3904...MMBT3904
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2012-08-21
11
相关型号：
SMBT3906E6327HTSA1
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON
SMBT3906E6327XT
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON
SMBT3906E6433
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON
©2020 ICPDF网 联系我们和版权申明