SMBT3906DW3T1G [ONSEMI]
Dual PNP Bipolar Transistor;
| 型号： | SMBT3906DW3T1G |
| 厂家： | 
ONSEMI |
| 描述： | Dual PNP Bipolar Transistor 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBT3906DW1T1
Dual General Purpose
Transistor
The MBT3906DW1T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
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(3)
(2)
(1)
Q
Features
Q
• h , 100−300
1
2
FE
• Low V , ≤ 0.4 V
CE(sat)
• Simplifies Circuit Design
• Reduces Board Space
(4)
(5)
(6)
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Package is Available
1
MAXIMUM RATINGS
SOT−363/SC−88
CASE 419B
STYLE 1
Rating
Symbol
Value
−40
Unit
Vdc
Vdc
Vdc
mAdc
V
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
−40
CBO
EBO
V
−5.0
−200
MARKING DIAGRAM
Collector Current − Continuous
Electrostatic Discharge
I
C
ESD
HBM>16000,
MM>2000
6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
d
A2
1
THERMAL CHARACTERISTICS
A2 = Device Code
d
Characteristic
Symbol
Max
Unit
= Date Code
Total Package Dissipation (Note 1)
P
D
150
mW
T = 25°C
A
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Ambient
R
833
°C/W
°C
q
JA
†
Device
MBT3906DW1T1
Package
Shipping
SOT−363
3000 Units/Reel
3000 Units/Reel
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
MBT3906DW1T1G SOT−363
(Pb−Free)
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2005 − Rev. 1
MBT3906DW1T1/D
MBT3906DW1T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Base Cutoff Current
Symbol
Min
Max
Unit
V
−40
−40
−5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
V
V
−
Vdc
I
BL
−50
−50
nAdc
nAdc
Collector Cutoff Current
I
−
CEX
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Output Capacitance
f
250
−
−
MHz
pF
T
C
4.5
obo
Input Capacitance
C
−
10.0
pF
ibo
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
h
2.0
12
k W
ie
re
fe
C
−4
Voltage Feedback Ratio
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
h
h
0.1
100
3.0
−
10
400
60
X 10
CE
C
Small−Signal Current Gain
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
−
C
Output Admittance
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
h
oe
mmhos
dB
C
Noise Figure
NF
4.0
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 k W, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V = −3.0 Vdc, V = 0.5 Vdc)
t
t
−
−
−
−
35
35
CC
BE
d
ns
ns
(I = −10 mAdc, I = −1.0 mAdc)
t
r
C
B1
(V = −3.0 Vdc, I = −10 mAdc)
225
75
CC
C
s
(I = I = −1.0 mAdc)
t
f
B1
B2
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2
MBT3906DW1T1
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C < 4 pF*
s
C < 4 pF*
s
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Fall Time
Figure 5. Turn−On Time
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3
MBT3906DW1T1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50 mA
6
I
C
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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4
MBT3906DW1T1
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
−ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
1.0
0.8
0.6
1.0
T = 25°C
J
V
@ I /I = 10
BE(sat) C B
0.5
0
+25°C TO +125°C
−ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
−ꢀ0.5
−ꢀ1.0
+25°C TO +125°C
−ꢀ55°C TO +25°C
0.4
0.2
0
V
@ I /I = 10
C B
CE(sat)
q
FOR V
BE(sat)
VB
−ꢀ1.5
−ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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5
MBT3906DW1T1
PACKAGE DIMENSIONS
SOT−363/SC−88
CASE 419B−02
ISSUE U
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
6
1
5
4
3
A
B
C
D
G
H
J
K
N
S
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
S
−B−
2
0.65 BSC
−−−
0.10
0.10
0.10
0.25
0.30
D 6 PL
0.20 REF
0.079 0.087
2.00
2.20
M
M
B
0.2 (0.008)
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
N
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
J
C
6. COLLECTOR 2
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your
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MBT3906DW1T1/D
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