SMBT6427 [INFINEON]
NPN Silicon Darlington Transistor; NPN硅达林顿晶体管
| 型号： | SMBT6427 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistor |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Darlington Transistor
SMBT 6427
● For general amplifier applications
● High collector current
● High current gain
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 6427
s1V
Q68000-A8320
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
40
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
40
12
IC
500
800
360
150
mA
Peak collector current
Total power dissipation, T
Junction temperature
ICM
P
tot
mW
˚C
S
= 74 ˚C
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 280
≤ 210
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 6427
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
40
40
12
–
–
–
–
–
–
V
I
C
= 10 mA
Collector-base breakdown voltage
= 100 µA
IC
Emitter-base breakdown voltage, I = 10 µA
E
Collector-base cutoff current
ICB0
V
CB = 30 V, I
E
= 0
= 0, T
–
–
–
–
50
10
nA
µA
V
CB = 30 V, I
E
A
= 150 ˚C
Collector cutoff current
= 0
I
CE0
EB0
–
–
1
µA
nA
–
V
CE = 30 V, I
B
Emitter-base cutoff current
= 0
I
–
–
50
VEB = 10 V, I
C
DC current gain
h
FE
IC
IC
IC
= 10 mA, VCE = 5 V
= 100 mA, VCE = 5 V
= 500 mA, VCE = 5 V
10000 –
20000 –
14000 –
100000
200000
140000
Collector-emitter saturation voltage1)
VCEsat
V
I
C
= 50 mA, I
= 500 mA, I
B
= 0.5 mA
= 0.5 mA
–
–
–
–
1.2
1.5
IC
B
Base-emitter saturation voltage1)
= 500 mA, I = 0.5 mA
V
BEsat
–
–
2.0
IC
B
Base-emitter voltage
= 50 mA, VCE = 5 V
VBE(on)
–
–
1.75
IC
AC characteristics
Transition frequency
f
T
130
–
–
–
–
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f= 1 MHz
Input capacitance
EB = 0.5 V, f= 1 MHz
Noise figure
= 1 mA, VCE = 5 V, R
f= 1 kHz to 15 kHz
C
obo
ibo
7
V
C
–
25
10
V
NF
–
dB
IC
S
= 100 kΩ
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
SMBT 6427
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
3
SMBT 6427
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBE sat), hFE = 1000
IC = f (VCE sat), hFE = 1000
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = VCE max
VCE = 5 V
Semiconductor Group
4
相关型号：
SMBT6427E6327
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
INFINEON
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