SP000221224 [INFINEON]

Smart Two Channel Highside Power Switch for Industrial Applications; 双通道海赛德智能电源开关的工业应用
SP000221224
型号: SP000221224
厂家: Infineon    Infineon
描述:

Smart Two Channel Highside Power Switch for Industrial Applications
双通道海赛德智能电源开关的工业应用

开关 电源开关
文件: 总14页 (文件大小:306K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
PROFET ITS621L1  
Smart Two Channel Highside Power Switch  
for Industrial Applications  
Features  
Product Summary  
Overvoltage protection Vbb(AZ)  
Operating voltage  
Operating temperature  
Overload protection  
43  
V
Current limitation  
Short circuit protection  
V
5.0 ... 34 V  
-30…+85 °C  
bb(on)  
Ta  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
both  
channels: each  
parallel  
1
)
Reverse battery protection  
On-state resistance RON  
Load current (ISO)  
Current limitation  
100  
4.4  
8
50  
8.5  
8
mΩ  
A
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
IL(ISO)  
IL(SCr)  
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
A
Loss of ground and loss of V protection  
bb  
PG-TO220AB/7  
Electrostatic discharge (ESD) protection  
Application  
7
7
µC compatible power switch with diagnostic  
1
1
feedback for 12 V and 24 V DC grounded loads  
in industrial applications  
Straight leads  
Standard  
All types of resistive, inductive and capacitve  
loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
4
Current  
limit 1  
Gate 1  
Voltage  
source  
Overvoltage  
protection  
protection  
V
Logic  
OUT1  
Limit for  
Level shifter  
Rectifier 1  
Voltage  
sensor  
unclamped  
ind. loads 1  
1
7
Temperature  
sensor 1  
3
6
IN1  
IN2  
Charge  
pump 1  
Open load  
Short to Vbb  
detection 1  
Logic  
ESD  
Charge  
pump 2  
5
Gate 2  
protection  
ST  
Current  
limit 2  
OUT2  
R
Level shifter  
Rectifier 2  
Limit for  
unclamped  
ind. loads 2  
Load  
Temperature  
sensor 2  
Open load  
R
O1  
O2  
Short to Vbb  
GND  
detection 2  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R  
=150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
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2006-Mar-28  
®
PROFET ITS621L1  
Pin  
1
2
Symbol  
OUT1 (Load, L)  
GND  
Function  
Output 1, protected high-side power output of channel 1  
Logic ground  
3
IN1  
Input 1, activates channel 1 in case of logical high signal  
4
V
Positive power supply voltage,  
bb  
the tab is shorted to this pin  
Diagnostic feedback: open drain, low on failure  
Input 2, activates channel 2 in case of logical high signal  
Output 2, protected high-side power output of channel 2  
5
6
7
ST  
IN2  
OUT2 (Load, L)  
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Symbol  
Vbb  
Vbb  
Values  
Unit  
V
Supply voltage (overvoltage protection see page 4)  
Supply voltage for full short circuit protection  
43  
34  
V
T
j Start=-40 ...+150°C  
4)  
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump  
60  
V
RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high  
Load current (Short circuit current, see page 5)  
Junction temperature  
Operating temperature range  
Storage temperature range  
IL  
Tj  
Ta  
Tstg  
Ptot  
self-limited  
+150  
-30 ...+85  
-40 ...+105  
A
°C  
Power dissipation (DC), TC 25 °C  
75  
W
Inductive load switch-off energy dissipation, single pulse  
Vbb =12V, Tj,start =150°C, TC =150°C const.  
one channel, IL = 4.4 A, ZL = 32mH, 0 : EAS  
395  
790  
mJ  
both channels parallel, IL = 8.5 A, ZL = 17mH, 0 :  
see diagrams on page 9  
Electrostatic discharge capability (ESD)  
IN: VESD  
all other pins:  
1.0  
2.0  
kV  
(Human Body Model)  
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993  
Input voltage (DC)  
Current through input pin (DC)  
Current through status pin (DC)  
see internal circuit diagrams page 7  
VIN  
IIN  
IST  
-10 ... +16  
±2.0  
V
mA  
±5.0  
2)  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a  
150 resistor in the GND connection and a 15 kresistor in series with the status pin. A resistor for the  
protection of the input is integrated.  
3)  
4)  
R = internal resistance of the load dump test pulse generator  
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839  
Infineon Technologies AG  
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2006-Mar-28  
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PROFET ITS621L1  
Thermal Characteristics  
Parameter and Conditions  
Symbol  
Values  
Unit  
min  
typ  
max  
K/W  
Thermal resistance  
chip - case, both channels: RthJC  
--  
--  
1.7  
each channel:  
--  
--  
--  
3.4  
75  
R
thJA  
junction - ambient (free air):  
--  
Electrical Characteristics  
Parameter and Conditions, each channel  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Load Switching Capabilities and Characteristics  
On-state resistance (pin 4 to 1 or 7)  
RON  
IL = 2 A  
T=25 °C:  
T=150 °C:  
j
--  
80  
100  
200  
mΩ  
j
each channel  
160  
4.4  
8.5  
Nominal load current, ISO Norm (pin 4 to 1 or 7)  
ON = 0.5 V, T = 85 °C each channel: IL(ISO)  
both channels parallel:  
3.5  
6.8  
V
--  
--  
10  
A
C
Output current (pin 1 or 7) while GND disconnected  
IL(GNDhigh)  
--  
--  
mA  
or GND pulled up, V =30 V, V = 0, see diagram  
bb  
IN  
page 8  
Turn-on time  
Turn-off time  
IN  
IN  
to 90% VOUT: ton  
to 10% VOUT: toff  
80  
80  
200  
200  
400  
400  
µs  
RL = 12 , T =-40...+150°C  
j
Slew rate on  
dV /dton  
-dV/dtoff  
0.1  
0.1  
--  
--  
1 V/µs  
1 V/µs  
10 to 30% VOUT, RL = 12 , T =-40...+150°C  
j
Slew rate off  
70 to 40% VOUT, RL = 12 , T =-40...+150°C  
j
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2006-Mar-28  
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Values  
PROFET ITS621L1  
Parameter and Conditions, each channel  
Symbol  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Operating Parameters  
Operating voltage5)  
Undervoltage shutdown  
Undervoltage restart  
T =-40...+150°C: Vbb(on)  
j
5.0  
3.5  
--  
--  
--  
--  
34  
5.0  
V
V
V
j
T =-40...+150°C: Vbb(under)  
T =-40...+25°C: Vbb(u rst)  
5.0  
j
T =+150°C:  
j
7.0  
Undervoltage restart of charge pump  
Vbb(ucp)  
5.6  
0.2  
7.0  
--  
V
V
--  
--  
see diagram page 13  
T =-40...+150°C:  
j
Undervoltage hysteresis  
Vbb(under)  
Vbb(under) = Vbb(u rst) - Vbb(under)  
Overvoltage shutdown  
Overvoltage restart  
Overvoltage hysteresis  
Overvoltage protection6)  
Ibb=40 mA  
T =-40...+150°C: Vbb(over)  
34  
33  
--  
--  
--  
0.5  
47  
43  
--  
--  
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)  
j
T =-40...+150°C: Vbb(over)  
j
T =-40...+150°C: Vbb(AZ)  
42  
--  
j
Standby current (pin 4)  
VIN=0  
Ibb(off)  
--  
--  
--  
14  
17  
--  
30  
35  
12  
µA  
µA  
Tj=-40...+25°C:  
Tj= 150°C:  
IL(off)  
Leakage output current (included in Ibb(off)  
)
VIN=0  
Operating current (Pin 2)7), VIN=5 V  
both channels on, Tj =-40...+150°C  
Operating current (Pin 2)7)  
IGND  
IGND  
--  
--  
4
2
6
3
mA  
mA  
one channel on, Tj =-40...+150°C:  
5)  
6)  
7)  
At supply voltage increase up to V = 5.6 V typ without charge pump, V  
V - 2 V  
bb  
bb  
OUT  
See also V  
in table of protection functions and circuit diagram page 8.  
ON(CL)  
Add I , if I > 0, add I , if V >5.5 V  
ST  
ST  
IN  
IN  
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2006-Mar-28  
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Values  
PROFET ITS621L1  
Parameter and Conditions, each channel  
Symbol  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Protection Functions8)  
Initial peak short circuit current limit (pin 4 to 1  
IL(SCp)  
or 7)  
Tj =-40°C:  
11  
9
18  
14  
8
25  
22  
14  
A
A
Tj =25°C:  
Tj =+150°C:  
5
Repetitive short circuit shutdown current limit  
IL(SCr)  
Tj = Tjt (see timing diagrams, page 11)  
--  
8
--  
Output clamp (inductive load switch off)  
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)  
41  
150  
--  
47  
--  
10  
--  
53  
--  
--  
V
°C  
K
Thermal overload trip temperature  
Thermal hysteresis  
Tjt  
Tjt  
-Vbb  
Reverse battery (pin 4 to 2) 9)  
Reverse battery voltage drop (V > V  
IL = -2.9 A, each channel  
--  
32  
V
)
out  
bb  
T=150 °C: -VON(rev)  
--  
mV  
j
610  
--  
Diagnostic Characteristics  
Open load detection current  
Tj=-40 °C: IL (OL)  
20  
20  
2
--  
--  
3
400  
300  
mA  
V
(on-condition)  
Tj=25 ..150°C:  
Open load detection voltage10) (off-condition)  
VOUT(OL)  
4
Tj=-40..150°C:  
Internal output pull down  
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C  
RO  
4
10  
30  
kΩ  
8)  
9)  
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are  
not designed for continuous repetitive operation.  
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source  
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal  
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature  
protection is not active during reverse current operation! Input and Status currents have to be limited (see  
max. ratings page 2 and circuit page 8).  
10)  
External pull up resistor required for open load detection in off state.  
Infineon Technologies AG  
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2006-Mar-28  
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Values  
PROFET ITS621L1  
Parameter and Conditions, each channel  
Symbol  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
2.5  
typ  
max  
6
Input and Status Feedback11)  
Input resistance  
RI  
3.5  
kΩ  
Tj=-40..150°C, see circuit page 7  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input threshold hysteresis  
Tj =-40..+150°C: VIN(T+)  
Tj =-40..+150°C: VIN(T-)  
VIN(T)  
1.7  
1.5  
--  
--  
--  
0.5  
--  
3.5  
--  
--  
V
V
V
Off state input current (pin 3 or 6), VIN = 0.4 V,  
IIN(off)  
1
50  
µA  
Tj =-40..+150°C  
On state input current (pin 3 or 6), VIN = 3.5 V,  
Tj =-40..+150°C  
IIN(on)  
20  
50  
90  
µA  
µs  
Delay time for status with open load after switch  
td(ST OL4)  
100  
320  
800  
off (other channel in off state)  
(see timing diagrams, page 12), Tj =-40..+150°C  
Delay time for status with open load after switch  
td(ST OL5)  
td(ST)  
--  
--  
5
20  
µs  
µs  
off (other channel in on state)  
(see timing diagrams, page 12), Tj =-40..+150°C  
Status invalid after positive input slope  
200  
600  
(open load)  
Status output (open drain)  
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)  
ST low voltage  
T =-40 ... +150°C:  
j
5.4  
--  
--  
6.1  
--  
--  
--  
0.4  
0.6  
V
j
T =-40...+25°C, IST = +1.6 mA: VST(low)  
j
T = +150°C, IST = +1.6 mA:  
j
11)  
If a ground resistor R  
is used, add the voltage drop across this resistor.  
GND  
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2006-Mar-28  
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PROFET ITS621L1  
Truth Table  
Normal operation  
Open load  
IN1  
IN2  
OUT1  
OUT2  
ST  
ITS621L1  
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
X
X
X
L
H
L
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
X
X
L
L
H
L
H
H
H
H
L
H
L
H
12)  
Channel 1  
H(L  
)
)
H
X
H
X
H
L
12)  
Channel 2  
Channel 1  
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
H
X
Z
Z
H
L
H
X
H
H
H
L
L
L
X
X
L
L
L
H(L  
H
L
13)  
Short circuit to V  
bb  
L
H
14)  
H(L  
L
)
)
13)  
Channel 2  
H
14)  
H(L  
both channel  
Overtemperature  
H
L
L
H
L
H
L
H
Channel 1  
Channel 2  
Undervoltage/ Overvoltage  
L = "Low" Level  
H = "High" Level  
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)  
Terms  
Input circuit (ESD protection)  
R
I
I
V
bb  
IN  
ON1  
V
4
V
bb  
I
ON2  
IN1  
V
3
6
bb  
I
IN1  
IN2  
ST  
ESD-ZDI  
L1  
1
7
I
OUT1  
OUT2  
I
I
IN2  
PROFET  
I
GND  
L2  
V
I
ST  
V
V
GND  
2
IN2  
IN1  
5
V
ESD zener diodes are not to be used as voltage clamp  
at DC conditions. Operation in this mode may result in  
a drift of the zener voltage (increase of up to 1 V).  
ST  
OUT1  
V
I
OUT2  
GND  
R
GND  
12)  
13)  
With additional external pull up resistor  
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND  
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.  
Low resistance to Vbb may be detected in the ON-state by the no-load-detection  
14)  
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2006-Mar-28  
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PROFET ITS621L1  
Open-load detection  
Status output  
ON-state diagnostic condition: VON < RON * IL(OL); IN  
+5V  
high  
+ V  
bb  
RST(ON)  
ST  
ESD-  
ZD  
V
ON  
ON  
GND  
ESD-Zener diode: 6.1 V typ., max 5 mA;  
OUT  
R
< 380 at 1.6 mA, ESD zener diodes are not  
ST(ON)  
Open load  
detection  
Logic  
unit  
to be used as voltage clamp at DC conditions.  
Operation in this mode may result in a drift of the zener  
voltage (increase of up to 1 V).  
Inductive and overvoltage output clamp  
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low  
+ V  
bb  
V
Z
R
EXT  
VON  
OFF  
OUT  
V
OUT  
PROFET  
GND  
Open load  
detection  
Logic  
unit  
R
O
V
ON  
clamped to 47 V typ.  
Signal GND  
Overvolt. and reverse batt. protection  
+ V  
bb  
GND disconnect  
V
Z2  
R
I
IN1  
I
bb  
V
4
IN2  
bb  
Logic  
V
3
bb  
IN1  
1
ST  
OUT1  
OUT2  
R
ST  
PROFET  
IN2  
6
V
Z1  
7
ST  
5
GND  
GND  
R
2
GND  
V
V
V
V
IN2  
IN1  
GND  
ST  
Signal GND  
V
= 6.1 V typ., V = 47 V typ., R = 3.5 ktyp,  
Z2 I  
Z1  
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+)  
Due to VGND >0, no VST = low signal available.  
.
R
= 150 Ω  
GND  
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2006-Mar-28  
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PROFET ITS621L1  
GND disconnect with GND pull up  
Inductive Load switch-off energy  
dissipation  
E
4
bb  
V
3
bb  
E
IN1  
IN2  
ST  
AS  
1
7
OUT1  
OUT2  
V
IN1  
E
E
Load  
L
PROFET  
V
6
IN2  
bb  
IN  
V
GND  
2
5
OUT  
PROFET  
=
ST  
GND  
L
V
V
GND  
ST  
V
Z
{
bb  
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off  
Due to VGND >0, no VST = low signal available.  
V
disconnect with energized inductive  
bb  
Energy stored in load inductance:  
2
load  
1
E = / ·L·I  
L
2
L
While demagnetizing load inductance, the energy  
4
dissipated in PROFET is  
V
3
bb  
IN1  
IN2  
ST  
1
7
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,  
OUT1  
OUT2  
high  
PROFET  
with an approximate solution for RL > 0:  
6
5
IL·L  
IL·RL  
GND  
2
E =  
AS  
·(Vbb +|VOUT(CL)|)· ln (1+  
)
2·RL  
|VOUT(CL)|  
Maximum allowable load inductance for  
a single switch off (both channels parallel)  
V
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,  
bb  
Vbb = 12 V, RL = 0 Ω  
Normal load current can be handled by the PROFET  
itself.  
L [mH]  
10000  
V
disconnect with charged external  
bb  
inductive load  
4
1000  
100  
10  
V
3
bb  
IN1  
1
7
OUT1  
OUT2  
high  
PROFET  
IN2  
6
D
ST  
5
GND  
2
V
bb  
If other external inductive loads L are connected to the PROFET,  
additional elements like D are necessary.  
1
3
5
7
9
11  
I
[A]  
L
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2006-Mar-28  
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PROFET ITS621L1  
Typ. transient thermal impedance chip case  
Z
Z
thJC = f(tp), one Channel active  
thJC [K/W]  
10  
1
0.1  
D=  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0
0.01  
1E-5 1E-4 1E-3 1E-2 1E-1 1E0  
1E1  
[s]  
t
p
Typ. transient thermal impedance chip case  
Z
Z
thJC = f(tp), both Channel active  
thJC [K/W]  
1
0.1  
D=  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0
0.01  
1E-5 1E-4 1E-3 1E-2 1E-1 1E0  
1E1  
[s]  
t
p
Infineon Technologies AG  
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2006-Mar-28  
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PROFET ITS621L1  
Both channels are symmetric and consequently the diagrams  
are valid for each channel as well as for permuted channels  
Timing diagrams  
Figure 1a: V turn on:  
Figure 2b: Switching an inductive load  
bb  
IN  
IN1  
IN2  
t
d(ST)  
ST  
V
bb  
*)  
V
OUT  
V
OUT1  
V
OUT2  
I
L
I
L(OL)  
t
ST open drain  
t
*) if the time constant of load is too large, open-load-status may  
occur  
Figure 3a: Short circuit  
Figure 2a: Switching a lamp:  
shut down by overtempertature, reset by cooling  
IN  
other channel: normal operation  
IN  
ST  
I
L
V
OUT  
I
L(SCp)  
I
L(SCr)  
I
L
ST  
t
t
Heating up may require several milliseconds, depending on  
external conditions  
Infineon Technologies AG  
11  
2006-Mar-28  
®
PROFET ITS621L1  
Figure 4a: Overtemperature:  
Figure 5b: Open load: detection in ON-state, turn  
Reset if T <T  
on/off to open load  
j
jt  
IN1  
IN  
IN2  
channel 2: normal operation  
ST  
V
OUT1  
V
OUT  
I
L1  
channel 1: open load  
T
t
t
t
J
t
d(ST)  
d(ST OL4)  
d(ST)  
d(ST OL5)  
ST  
t
t
Figure 5c: Open load: detection in ON- and OFF-state  
Figure 5a: Open load: detection in ON-state, open  
(with R  
), turn on/off to open load  
EXT  
load occurs in on-state  
IN1  
IN1  
IN2  
channel 2: normal operation  
IN2  
channel 2: normal operation  
V
V
OUT1  
OUT1  
IL1  
channel 1:  
I
channel 1: open load  
L1  
open  
load  
open  
load  
normal  
load  
t
t
d(ST OL1)  
t
t
ST  
t
d(ST OL1)  
t
d(ST OL2)  
t
d(ST OL2)  
d(ST)  
d(ST OL5)  
d(ST)  
ST  
t
t
td(ST OL5) depends on external circuitry because of high  
impedance  
td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ  
Infineon Technologies AG  
12  
2006-Mar-28  
®
PROFET ITS621L1  
Figure 6a: Undervoltage:  
Figure 7a: Overvoltage:  
IN  
IN  
V
bb  
V
V
V
ON(CL)  
bb(over)  
bb(o rst)  
V
bb  
V
V
bb(u cp)  
bb(under)  
V
bb(u rst)  
V
OUT  
V
OUT  
ST  
ST open drain  
t
t
Figure 6b: Undervoltage restart of charge pump  
V
ON(CL)  
V
on  
V
bb(over)  
V
V
bb(o rst)  
bb(u rst)  
V
bb(u cp)  
V
bb(under)  
V
bb  
charge pump starts at Vbb(ucp) =5.6 V typ.  
Infineon Technologies AG  
13  
2006-Mar-28  
®
PROFET ITS621L1  
Package and Ordering Code  
Published by  
All dimensions in mm  
Infineon Technologies AG,  
St.-Martin-Strasse 53,  
D-81669 München  
Standard PG-TO220AB/7 Ordering code  
ITS621L1  
SP000219533  
© Infineon Technologies AG 2006  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain  
components and shall not be considered as a guarantee of  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not  
limited to warranties of non-infringement, regarding circuits,  
descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and  
conditions and prices please contact your nearest Infineon  
Technologies Office in Germany or our Infineon  
Technologies Representatives worldwide (see address list).  
Warnings  
Due to technical requirements components may contain  
dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies  
Office.  
PG-TO220AB/7, Opt. E3230 Ordering code  
ITS621L1 E3230  
SP000221224  
Infineon Technologies Components may only be used in life-  
support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the  
failure of that life-support device or system, or to affect the  
safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the  
human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be  
endangered.  
Infineon Technologies AG  
14  
2006-Mar-28  

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