SP000305171 [INFINEON]
Buffer/Inverter Based Peripheral Driver, 0.7A, PDSO4, SOT-223, 4 PIN;
| 型号： | SP000305171 |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 0.7A, PDSO4, SOT-223, 4 PIN 驱动 光电二极管 接口集成电路 |
| 文件： | 总15页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Smart Lowside Power Switch
HITFET BSP 75N
Data Sheet Rev. 1.4
Features
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Green Product (RoHS compliant)
• AEC Stress Test Qualification
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.
Type
Ordering Code
Package
HITFET BSP 75N
on request
PG-SOT223-4
Product Summary
Parameter
Symbol
VDS
Value
60
Unit
V
Continuous drain source voltage
On-state resistance
Current limitation
RDS(ON)
ID(lim)
ID(Nom)
EAS
550
1
mΩ
A
Nominal load current
Clamping energy
0.7
550
A
mJ
Data Sheet Rev. 1.4
1
2008-07-10
HITFET BSP 75N
Vbb
HITFET
Logic
M
OUTPUT
Stage
Over voltage
Protection
DRAIN
dV/dt
IN
limitation
Short circuit
Protection
Over
temperature
Protection
Current
ESD
Limitation
SOURCE
Figure 1
Block Diagram
1
IN
2
3
DRAIN
SOURCE
Figure 2
Pin Configuration
Pin Definitions and Functions
Pin No. Symbol Function
1
2
IN
Input; activates output and supplies internal logic
DRAIN
Output to the load
3 + TAB SOURCE Ground; pin3 and TAB are internally connected
Data Sheet Rev. 1.4
2
2008-07-10
HITFET BSP 75N
Circuit Description
The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a
logic level input, an open drain DMOS output stage and integrated protection functions.
It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive
and industrial applications.
Protection Functions
• Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min.
60V) when inductive loads are switched off.
• Current limitation: By means of an internal current measurement the drain current is
limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates
in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.
• Over temperature and short circuit protection: This protection is based on sensing
the chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150 °C. A
hysteresis of typ. 10 K enables an automatic restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump
protected (see Maximum Ratings).
Data Sheet Rev. 1.4
3
2008-07-10
HITFET BSP 75N
Absolute Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Continuous drain source voltage 1)
Symbol
VDS
Values
60
Unit Remarks
V
V
–
–
Drain source voltage for
short circuit protection
VDS
36
Continuous input voltage
Peak input voltage
VIN
VIN
IIN
-0.2 … +10 V
-0.2 … +20 V
–
–
–
Continuous Input Current
-0.2V ≤ VIN ≤ 10V
VIN<-0.2V or VIN>10V
mA
no limit
| IIN |≤ 2mA
Operating temperature range
Storage temperature range
Tj
Tstg
-40 … +150 °C
-55 … +150 °C
–
–
Power dissipation (DC)
Ptot
1.8
W
Unclamped single pulse inductive energy EAS
550
mJ
I
D(ISO) = 0.7 A;
V
bb =32V
Load dump protection 2)
IN = low or high (8 V); RL = 50 Ω
IN = high (8 V); RL = 22 Ω
VLoadDump
V
V
VLoadDump =
VP + VS;
80
47
VP = 13.5 V
RI3) = 2 Ω;
td = 400 ms;
Electrostatic discharge voltage (Human VESD
Body Model)
4000
–
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
Thermal Resistance
Junction soldering point
Junction - ambient4)
RthJS
RthJA
≤ 10
≤ 70
K/W –
K/W –
1)
See also Figure 7 and Figure 10.
2)
VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.
3)
4)
RI = internal resistance of the load dump test pulse generator LD200.
Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.
Data Sheet Rev. 1.4
4
2008-07-10
HITFET BSP 75N
Electrical Characteristics
Tj = 25 °C, unless otherwise specified
Parameter
Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Static Characteristics
Drain source clamp voltage
VDS(AZ) 60
–
–
75
5
V
ID = 10 mA,
Tj = -40 … +150 °C
Off state drain current
Input threshold voltage
IDSS
–
1
µA
V
V
IN = 0 V,
DS = 32 V,
Tj = -40 … +150 °C
VIN(th)
IIN(1)
1.8 2.5
V
ID = 10 mA
Input current:
normal operation, ID < ID(lim)
current limitation mode, ID = ID(lim): IIN(2)
After thermal shutdown, ID = 0 A: IIN(3)
µA
VIN = 5 V
:
–
–
100 200
250 400
1000 1500 2000
On-state resistance
On-state resistance
Nominal load current
RDS(on)
mΩ ID = 0.7 A,
IN = 5 V
Tj = 25 °C
–
–
490 675
850 1350
V
Tj = 150 °C
RDS(on)
mΩ ID = 0.7 A,
Tj = 25 °C
Tj = 150 °C
–
–
430 550
750 1000
V
IN = 10 V
ID(Nom) 0.7
–
–
A
A
V
V
BB = 12 V,
DS = 0.5 V,
TS = 85 °C,
Tj < 150 °C
Current limit
ID(lim)
1
1.5 1.9
V
V
IN = 10 V,
DS = 12 V
Dynamic Characteristics 1)
Turn-on time
V
IN to 90% ID: ton
–
–
10
10
20
20
µs RL = 22 Ω,
V
V
IN = 0 to 10 V,
BB = 12 V
Turn-off time
V
IN to 10% ID: toff
µs RL = 22 Ω,
V
V
IN = 10 to 0 V,
BB = 12 V
Data Sheet Rev. 1.4
5
2008-07-10
HITFET BSP 75N
Electrical Characteristics (cont’d)
Tj = 25 °C, unless otherwise specified
Parameter
Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Slew rate on
70 to 50% VBB: -dVDS/ –
dton
5
10
V/ RL = 22 Ω,
µs
V
V
IN = 0 to 10 V,
BB = 12 V
Slew rate off
50 to 70% VBB: dVDS
/
–
10
15
V/ RL = 22 Ω,
dtoff
µs
V
V
IN = 10 to 0 V,
BB = 12 V
Protection Functions2)
Thermal overload trip
temperature
Tjt
150 165 180 °C
–
–
Thermal hysteresis
∆Tjt
–
10
–
Κ
Unclamped single pulse inductive EAS
mJ
ID(ISO) = 0.7 A,
energy
Tj = 25 °C
Tj = 150 °C
550
200
–
–
–
–
V
BB = 32 V
Inverse Diode
Continuous source drain voltage VSD
–
1
–
V
V
IN = 0 V,
-ID = 2 × 0.7 A
1)
See also Figure 9.
2)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous, repetitive operation.
Data Sheet Rev. 1.4
6
2008-07-10
HITFET BSP 75N
EMC-Characteristics
The following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.
Table 1
Test Conditions
Parameter
Temperature
Symbol Value
Unit
°C
V
Remark
TA
VS
RL
23 ±±
13.5
27
–
Supply Voltage
Load
–
Ω
ohmic
Operation mode
PWM
DC
–
–
–
–
fINx=100Hz, D=0.5
ON / OFF
DUT specific
VIN(’HIGH’)=5V
Fast electrical transients
acc. to ISO 7637
Test Result
OUTx stressed
Max.
Test1)
Pulse Cycle Time
and Generator
Impedance
Test
Pulse
Level
ON
C
OFF
1
2
-200V
+200V
-200V
+200V
-7V
C
500ms ; 10Ω
500ms ; 10Ω
100ms ; 50Ω
100ms ; 50Ω
0.01Ω
C
C
3a
3b
4
C
C
C
C
C
C
5
175V
E(65V)
E(75V)
400ms ; 2Ω
1)
The test pulses are applied at VS
Definition of functional status
Class
Content
C
All functions of the device are performed as designed after exposure to
disturbance.
E
One or more function of a device does not perform as designed after
exposure and can not be returned to proper operation without repairing
or replacing the device. The value after the character shows the limit.
Data Sheet Rev. 1.4
7
2008-07-10
HITFET BSP 75N
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct
Power Injection)
PULSE
VBB
Direct Power Injection: Forward Power
CW
RL
BSP75N
Failure Criteria: Amplitude or frequency
variation max. 10% at OUT
IN
DRAIN
SOURCE
Typ. Vbb Susceptibility at DC-ON/OFF
and at PWM
40
Figure 3
Test circuit for ISO pulse
35
30
25
20
15
Conducted Emissions
Acc. IEC 61967-4 (1Ω/150Ω method)
Typ. Vbb Emissions at PWM-mode with
10
Limit
150Ω-matching network
OUT, ON
OUT, OFF
OUT, PWM
5
0
100
Noise level
BSP75N
150ohm Class6
150ohm Class1
1
10
100
1000
90
f / MHz
80
70
60
50
40
30
20
10
0
150Ω / 8-H
VBB
B A N
150Ω / 13-N
-10
-20
RL
BSP75N
0,1
1
10
100
1000
f / MHz
IN
DRAIN
SOURCE
HF
VBB
Test circuit for conducted susceptibility
2)
RL
BSP75N
IN
DRAIN
SOURCE
1)
For defined de coupling and high reproducibility a
150
Ω
-Network
defined choke (5µH at 1MHz) is inserted in the
Vbb-Line.
2)
Broadband Artificial Network (short: BAN) consists
of the same choke (5µH at 1MHz) and the same
150 Ohm-matching network as for emission
measurement for defined de coupling and high
reproducibility.
Figure 4
Test circuit for conducted
emission 1)
Data Sheet Rev. 1.4
8
2008-07-10
HITFET BSP 75N
Block diagram
VBB
ID
Vcc
uC
BSP75N
IN
HITFET
Px.1
D
IIN
Vbb
IN
DRAIN
GND
SOURCE
SOURCE
VDS
VIN
Figure 8
Application Circuit
Figure 5
Terms
IN
SOURCE
Figure 6
Input Circuit (ESD
protection)
ESD zener diodes are not designed for DC
current.
LOAD
Drain
VAZ
VDS
Power
Source
DMOS
ID
Figure 7
Inductive and Over
voltage Output Clamp
Data Sheet Rev. 1.4
9
2008-07-10
HITFET BSP 75N
Timing diagrams
VIN
VIN
t
ID(lim)
t
t
ID
VDS
t
ϑj
thermal hysteresis
0.9*ID
ID
t
0.1*ID
t
Figure 11
Short circuit
ton
toff
Figure 9
Switching a Resistive
Load
VIN
VDS
ID
VDS(AZ)
t
VBB
t
t
Figure 10
Switching an Inducitve
Load
Data Sheet Rev. 1.4
10
2008-07-10
HITFET BSP 75N
1 Max. allowable power dissipation
2 On-state resistance RON = f(Tj);
P
tot = f(TAmb
)
ID = 0.7 A; VIN = 10 V
2
tot
1000
P
R
ON
m Ω
W
800
m ax.
700
600
500
400
300
200
100
0
max.
1,2
0,8
0,4
0
typ.
°C
°C
-50 -25
0
25 50 75 100 1150
0
25
50
75
100
150
T
T
Amb
j
3 On-state resistance RON = f(Tj);
ID = 0.7 A; VIN = 5 V
4 Typ. input threshold voltage
VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V
1400
ON
2,5
IN(th)
R
V
mΩ
V
typ.
1000
800
600
400
200
0
max.
1,5
1
typ.
0,5
0
°C
°C
-50 -25
0
25 50 75 100 150
-50 -25
0
25 50 75 100 1150
T
T
j
j
Data Sheet Rev. 1.4
11
2008-07-10
HITFET BSP 75N
5 Typ. on-state resistance RON = f(VIN);
ID = 0.7 A; Tj = 25 °C
6 Typ. current limitation ID(lim) = f(Tj);
VDS = 12 V, VIN = 10 V
2000
2
I D(lim )
R
ON
typ.
typ.
A
mΩ
1000
500
0
1
0,5
0
°C
V
0
2
4
6
10
-50 -25
0
25 50 75 100 150
V
T
IN
j
7 Typ. short circuit current
8 Max. transient thermal impedance
ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C
ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T
100
2
I D(SC)
Z
th(JA)
typ.
A
K/W
1
0,5
0
D =
0.5
0.2
0.1
0.05
0.02
0.01
0
1
0,1
0,00001
V
0
2
4
6
10
s
0,001
0,1
10
100000
t P
V
IN
Data Sheet Rev. 1.4
12
2008-07-10
HITFET BSP 75N
Package Outlines HITFET‚ BSP 75N
1
Package Outlines HITFET BSP 75N
0.1
1.6
0.2
6.5
A
0.1
0.1 MAX.
3
B
4
3
1
2
2.3
0.1
0.28
0.7
0.0
4
4.6
0...10˚
M
0.25
A
M
0.25
B
GPS05560
Figure 12
PG-SOT223-4 (Plastic Green Small Outline Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page: http://www.infineon.com/packages.
Data Sheet 13
Dimensions in mm
Rev. 1.4, 2008-07-10
HITFET BSP 75N
Revision History
2
Revision History
Version Date
Changes
Rev. 1.4 2008-07-10 fixed a formatting error in Disclaimer page
Rev. 1.3 2008-04-14 package naming updated to PG-SOT223-4
Rev. 1.2 2007-04-12 released automotive green version
changed package naming from -11 to PG-SOT223-4-7
Rev. 1.1 2007-03-28 Package parameter (humidity and climatic) removed in
Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.0 2003-01-10 released production version
Data Sheet
14
Rev. 1.3, 2008-04-14
HITFET BSP 75N
Edition 2008-07-10
Published by Infineon Technologies AG,
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
15
2008-07-10
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