SP000638568 [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | SP000638568 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总11页 (文件大小：1075K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
EasyPACKꢀ模块ꢀ采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管ꢀ带有pressfit压接管脚和温度检测NTC
EasyPACKꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT3ꢀandꢀEmitterꢀControlledꢀ3ꢀdiodeꢀandꢀPressFITꢀ/ꢀNTC
初步数据ꢀ/ꢀPreliminaryꢀData
J
VCES = 650V
IC nom = 150A / ICRM = 300A
典型应用
TypicalꢀApplications
• 3-Level-Applications
• SolarꢀApplications
• UPSꢀSystems
• 三电平应用
• 太阳能应用
• UPS系统
电气特性
ElectricalꢀFeatures
• 增加阻断电压至650V
• 低电感设计
• 低开关损耗
• 低ꢀꢀVCEsat
• Increasedꢀblockingꢀvoltageꢀcapabilityꢀtoꢀ650V
• Lowꢀinductiveꢀdesign
• LowꢀSwitchingꢀLosses
• LowꢀVCEsat
机械特性
MechanicalꢀFeatures
• 低热阻的三氧化二铝（ꢀAl2O3ꢀ衬底
• 紧凑型设计
• Al2O3ꢀSubstrateꢀwithꢀLowꢀThermalꢀResistance
• Compactꢀdesign
• PressFITꢀ压接技术
• 集成的安装夹使安装坚固
• PressFITꢀContactꢀTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
ꢀDigit
ꢀꢀ1ꢀ-ꢀꢀꢀ5
ꢀꢀ6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
DMXꢀ-ꢀCode
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
ULꢀapprovedꢀ(E83335)
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
650
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 25°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
150
150
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
300
335
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 150 A, VGE = 15 V
IC = 150 A, VGE = 15 V
IC = 150 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,45 1,90
1,60
1,70
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 2,40 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
4,9
5,8
1,60
2,0
9,30
0,285
ꢀ
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 650 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
1,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,085
0,10
0,11
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,04
0,045
0,045
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,30
0,33
0,34
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,09
0,13
0,14
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 150 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V, di/dt = 2400 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 3,3 Ω
Tvj = 25°C
1,20
1,75
1,95
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 150 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 3,3 Ω
Tvj = 25°C
4,15
5,10
5,40
mJ
mJ
mJ
ꢀ
ꢀ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
1100
750
A
A
ISC
ꢀ
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
ꢀ
ꢀ
0,40 0,45 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,45
K/W
°C
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
650
150
300
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
1700
1450
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 150 A, VGE = 0 V
IF = 150 A, VGE = 0 V
IF = 150 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,55 1,95
1,50
1,45
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
VGE = -15 V
80,0
A
A
A
Tvj = 125°C
Tvj = 150°C
ꢀ
ꢀ
ꢀ
105
110
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
VGE = -15 V
6,90
11,5
13,5
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
VGE = -15 V
1,40
2,50
3,00
mJ
mJ
mJ
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
0,55 0,60 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个二极管ꢀ/ꢀperꢀdiode
0,50
K/W
°C
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
二极管,ꢀD5-D6ꢀ/ꢀDiode,ꢀD5-D6
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
650
150
300
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
2450
2150
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 150 A, VGE = 0 V
IF = 150 A, VGE = 0 V
IF = 150 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,55 1,95
1,50
1,45
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
80,0
A
A
A
Tvj = 125°C
Tvj = 150°C
ꢀ
ꢀ
ꢀ
105
110
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
6,90
11,5
13,5
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 150 A, - diF/dt = 2400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
1,40
2,50
3,00
mJ
mJ
mJ
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
0,50 0,55 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,45
K/W
°C
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
额定电阻值
Ratedꢀresistance
TC = 25°C
R25
∆R/R
P25
ꢀ
-5
ꢀ
5,00
ꢀ
ꢀ
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TC = 100°C, R100 = 493 Ω
5
%
耗散功率
Powerꢀdissipation
TC = 25°C
ꢀ
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
ꢀ
3375
3411
3433
ꢀ
ꢀ
ꢀ
K
K
K
B-值
B-value
ꢀ
B-值
B-value
ꢀ
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
ꢀ kV
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al2O3
ꢀ
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
11,5
6,3
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
10,0
5,0
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 200
ꢀ
ꢀ
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
LsCE
RCC'+EE'
Tstg
ꢀ
ꢀ
15
2,00
ꢀ
ꢀ
ꢀ
nH
mΩ
°C
N
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
储存温度
Storageꢀtemperature
ꢀ
ꢀ
ꢀ
-40
40
ꢀ
125
80
ꢀ
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
-
重量
Weight
G
39
g
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ150°C
300
300
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
270
240
210
180
150
120
90
270
240
210
180
150
120
90
60
60
30
30
0
0
0,0
0,4
0,8
1,2
1,6
2,0
2,4
2,8
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ3.3ꢀΩ,ꢀRGoffꢀ=ꢀ3.3ꢀΩ,ꢀVCEꢀ=ꢀ300ꢀV
300
11
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
10
9
8
7
6
5
4
3
2
1
0
270
240
210
180
150
120
90
60
30
0
5
6
7
8
9
10
11
12
0
30 60 90 120 150 180 210 240 270 300
VGE [V]
IC [A]
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJHꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ150ꢀA,ꢀVCEꢀ=ꢀ300ꢀV
18
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
ZthJH : IGBT
16
Eoff, Tvj = 150°C
14
12
10
8
1
6
0,1
4
i:
ri[K/W]: 0,028 0,052 0,269 0,501
τi[s]: 0,0005 0,005 0,05 0,2
1
2
3
4
2
0
0,01
0,001
0
3
6
9
12 15 18 21 24 27 30 33
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
IFꢀ=ꢀfꢀ(VF)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ3.3ꢀΩ,ꢀTvjꢀ=ꢀ150°C
330
300
IC, Modul
Tvj = 25°C
IC, Chip
Tvj = 125°C
Tvj = 150°C
300
270
240
210
180
150
120
90
270
240
210
180
150
120
90
60
60
30
30
0
0
0
100
200
300
400
500
600
700
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0
VCE [V]
VF [V]
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ3.3ꢀΩ,ꢀVCEꢀ=ꢀ300ꢀV
IFꢀ=ꢀ150ꢀA,ꢀVCEꢀ=ꢀ300ꢀV
5,0
4,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
3,5
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
30 60 90 120 150 180 210 240 270 300
IF [A]
0
3
6
9
12 15 18 21 24 27 30
RG [Ω]
瞬态热阻抗ꢀ二极管,逆变器ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
ZthJ3ꢀ=ꢀfꢀ(t)
正向偏压特性ꢀ二极管,ꢀD5-D6ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀD5-D6ꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
10
300
ZthJH : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
270
240
210
180
150
120
90
1
0,1
60
i:
1
2
3
4
ri[K/W]: 0,049 0,113 0,408 0,48
30
τi[s]:
0,0005 0,005 0,05 0,2
0,01
0,001
0
0,01
0,1
t [s]
1
10
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0
VF [V]
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,ꢀD5-D6ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀD5-D6ꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,ꢀD5-D6ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀD5-D6ꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ3.3ꢀΩ,ꢀVCEꢀ=ꢀ300ꢀV
IFꢀ=ꢀ150ꢀA,ꢀVCEꢀ=ꢀ300ꢀV
5,0
4,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
3,5
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
30 60 90 120 150 180 210 240 270 300
IF [A]
0
3
6
9
12 15 18 21 24 27 30 33
RG [Ω]
瞬态热阻抗ꢀ二极管,ꢀD5-D6ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀD5-D6ꢀ
ZthJHꢀ=ꢀfꢀ(t)
负温度系数热敏电阻ꢀ温度特性
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Rꢀ=ꢀfꢀ(T)
10
100000
ZthJH : Diode
Rtyp
1
10000
1000
100
0,1
i:
ri[K/W]: 0,043 0,099 0,366 0,443
τi[s]: 0,0005 0,005 0,05 0,2
1
2
3
4
0,01
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
TC [°C]
100 120 140 160
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
9
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
J
封装尺寸ꢀ/ꢀpackageꢀoutlines
Infineon
preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
10
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
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preparedꢀby:ꢀDK
approvedꢀby:ꢀMB
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.1
11
相关型号：
SP000677896
Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
INFINEON
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