SP000641916 [INFINEON]

Power Field-Effect Transistor,;


型号：	SP000641916
厂家：	Infineon
描述：	Power Field-Effect Transistor,
文件：	总19页 (文件大小：1266K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

CoolMOS™ꢀC6ꢀ600V

600VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor

IPx60R190C6

DataꢀSheet

Rev.ꢀ2.2

Final

PowerꢀManagementꢀ&ꢀMultimarket

600V CoolMOS" C6 Power Transistor

IPA60R190C6, IPB60R190C6

IPI60R190C6, IPP60R190C6

IPW60R190C6

Description

CoolMOS" is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS" C6 series

combines the experience of the leading SJ MOSFET supplier with

high class innovation. The offered devices provide all benefits of a

fast switching SJ MOSFET while not sacrificing ease of use.

Extremely low switching and conduction losses make switching

applications even more efficient, more compact, lighter, and cooler.

Features

•

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

drain

pin 2

Easy to use/drive

JEDEC¹⁾qualified, Pb-free plating, Halogen free

gate

pin 1

Applications

source

pin 3

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

Please note: For MOSFET paralleling the use of ferrite beads on

the gate or separate totem poles is generally recommended.

Table 1

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

Value

650

0.19

Unit

I_D,pulse

E_oss@ 400V

Body diode di/dt

5.2

µJ

A/µs

500

Type / Ordering Code

IPW60R190C6

IPB60R190C6

IPI60R190C6

Package

Marking

Related Links

PG-TO247

PG-TO263

PG-TO262

PG-TO220

IFX C6 Product Brief

IFX C6 Portfolio

6R190C6

IFX CoolMOS Webpage

IFX Design tools

IPP60R190C6

IPA60R190C6

PG-TO220 FullPAK

1) J-STD20 and JESD22

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Table of Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOSTM C6 Power Transistor

IPx60R190C6

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Min. Typ. Max.

Unit Note / Test Condition

Continuous drain current¹⁾

20.2

12.8

TC= 25 °C

T_C=100°C

T_C=25 °C

Pulsed drain current²⁾

ID,pulse

EAS

Avalanche energy, single pulse

418

ID=3.4 A,VDD=50 V

(see table 21)

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

0.63

3.4

ID=3.4 A,VDD=50 V

EAR

IAR

dv/dt

V/ns

V_DS=0...480 V

static

- 20

- 30

VGS

AC (f>1 Hz)

TC=25 °C

Power dissipation for

151

Ptot

TO-220, TO-247, TO-262, TO-263

Power dissipation for

TO-220 FullPAK

Ptot

Operating and storage temperature

- 55

150

°C

Tj,Tstg

Mounting torque

TO-220, TO-247

Ncm M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

M2.5 screws

Continuous diode forward current

Diode pulse current²⁾

17.5

TC=25 °C

IS,pulse

dv/dt

dif/dt

Reverse diode dv/dt³⁾

V/ns

A/µs

VDS=0...400 V,ISD& ID,

Tj=25 °C

500

Maximum diode

commutation speed³⁾

(see table 22)

2500

VISO

Insulation withstand voltage

TO-220 FullPAK

VRMS, T_C=25 °C, t = 1 min

1) Limited by Tj,max. Maximum duty cycle D=0.75

2) Pulse widtht_plimited by Tj,max

3) Identical low side and high side switch with identical RG

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Thermal characteristics

Table 3

Thermal characteristics TO-220 (IPP60R190C6),TO-247 (IPW60R190C6),TO-262 (IPI60R190C6)

Parameter

Symbol

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

0.83

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 4

Thermal characteristics TO-220 FullPAK (IPA60R190C6)

Symbol Values

Typ.

Parameter

Unit

Note /

Test Condition

Min.

Max.

3.7

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

leaded

Soldering temperature,

wavesoldering only allowed at

leads

T_sold

260

°C

1.6 mm (0.063 in.)

from case for 10 s

Table 5

Thermal characteristics TO-263 (IPB60R190C6)

Symbol Values

Parameter

Unit

Note /

Test Condition

Min.

Typ.

Max.

0.83

Thermal resistance, junction - case R_thJC

°C/W

Thermal resistance, junction -

ambient

R_thJA

SMD version, device

on PCB, minimal

footprint

SMD version, device

on PCB, 6cm²cooling

area¹⁾

Soldering temperature,

T_sold

260

°C

reflow MSL1

wave- & reflow soldering allowed

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm²copper area (thickness 70µm) for drain connection.

PCB is vertical without air stream cooling.

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 6

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

600

2.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=0.25 mA

V_DS=V_GS, I_D=0.63mA

Gate threshold voltage

V_GS(th)

I_DSS

3.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.17

0.19

V_GS=10 V, I_D=9.5 A,

T_j=25 °C

0.44

8.5

V_GS=10 V, I_D=9.5 A,

T_j=150 °C

Gate resistance

R_G

f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

1400

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

related²⁾

266

I_D=constant, V_GS=0 V

V_DS=0...480V

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

110

V_DD=400 V,

V_GS=13 V, I_D=9.5A,

R_G= 3.4!

Turn-off delay time

Fall time

(see table 20)

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics

Table 8

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

7.6

V_DD=480 V, I_D=9.5A,

V_GS=0 to 10 V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.4

Table 9

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=9.5A,

T_j=25 °C

Reverse recovery time

t_rr

430

6.9

µC

V_R=400 V, I_F=9.5A,

di_F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics diagrams

Table 10

Power dissipation

TO-220, TO-247, TO-262, TO-263

TO-220 FullPAK

P_tot= f(T_C)

Table 11

Max. transient thermal impedance

TO-220, TO-247, TO-262, TO-263

Max. transient thermal impedance

TO-220 FullPAK

Z_(thJC)=f(tp); parameter: D=t_p/T

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics diagrams

Table 12

Safe operating area T_C=25 °C

TO-220, TO-247, TO-262, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=25 °C; D=0; parameter t_p

Table 13

Safe operating area T_C=80 °C

TO-220, TO-247, TO-262, TO-263

TO-220 FullPAK

I_D=f(V_DS); T_C=80 °C; D=0; parameter t_p

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics diagrams

Table 14

Typ. output characteristics T_C=25 °C

Typ. output characteristics T_j=125 °C

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

I_D=f(V_DS); T_j=125 °C; parameter: V_GS

Table 15

Typ. drain-source on-state resistance

Drain-source on-state resistance

R_DS(on)=f(I_D); T_j=125 °C; parameter: V_GS

R_DS(on)=f(T_j); I_D=9.5 A; V_GS=10 V

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics diagrams

Table 16

Typ. transfer characteristics

Typ. gate charge

I_D=f(V_GS); V_DS=20V

V_GS=f(Q_gate), I_D=9.5A pulsed

Table 17

Avalanche energy

Drain-source breakdown voltage

E_AS=f(T_j); I_D=3.4 A; V_DD=50 V

V_BR(DSS)=f(T_j); I_D=0.25 mA

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics diagrams

Table 18

Typ. capacitances

Typ. C_ossstored energy

C=f(V_DS); V_GS=0 V; f=1 MHz

E_OSS=f(V_DS)

Table 19

Forward characteristics of reverse diode

I_F=f(V_SD); parameter: T_j

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Test circuits

Table 20

Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load

Switching time waveform

V_DS

90%

V_DS

V_GS

10%

V_GS

t_d(off)

t_d(on)

t_on

t_f

t_r

t_off

Table 21

Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

V_D

I_D

V_DS

I_D

Table 22

Test circuit and waveform for diode characteristics

Test circuit for diode characteristics

Diode recovery waveform

I_D

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($ " $

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R_G1

(

)

V_DS

%$!

--,

R_G2

)

--,

/#₀₀#/$

--,

'$!

--,

R_G1= R_G2

.*+$$$&&

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Package outlines

Figure 1

Outlines TO-247, dimensions in mm/inches

Final Data Sheet

Rev. 2.2, 2014-12-02

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Package outlines

Figure 2

Outlines TO-220, dimensions in mm/inches

Final Data Sheet

Rev. 2.2, 2014-12-02

6**M =^^[FGKm =6 H^fTa LaP]bXbc^a

CHx6*J190=6

/45<487 @DC=;?7B

/,..,/*6*45

,0(+*5

),/

MIN

4.50

2.34

2.42

0.65

0.95

0.65

0.40

MAX

4.90

2.85

2.86

0.90

1.38

1.51

1.38

1.51

0.63

16.15

9.83

10.65

MIN

MAX

0.193

0.112

0.113

0.035

0.054

0.059

0.054

0.059

0.025

0.636

0.387

0.419

)1(7/*06 01"

Z8B00003319

0.177

0.092

0.095

0.026

0.037

0.026

0.016

0.617

0.353

0.394

5('.*

;

2.5

5mm

)

15.67

8.97

*7412*'0 241-*(6,10

10.00

2.54 (BSC)

0.100 (BSC)

5.08

0.200

28.70

12.78

2.83

29.75

13.75

3.45

1.130

0.503

0.111

0.116

0.124

1.171

0.541

0.136

0.133

0.138

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05-05-2014

4*8,5,10

2.95

3.38

3.15

3.50

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600V CoolMOS" C6 Power Transistor

IPx60R190C6

Package outlines

Figure 4

Outlines TO-262, dimensions in mm/inches

Final Data Sheet

Rev. 2.2, 2014-12-02

)$$4 +AA>./2H +) 0AF8B 3B5@C<CDAB

-0G)$1%*$+)

056=598 AED><@8C

,<9EB8 (

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600VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor

IPx60R190C6

RevisionꢀHistory

IPx60R190C6

Revision:ꢀ2015-02-09,ꢀRev.ꢀ2.2

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.0

2.1

2.2

Release of final data sheet

2011-06-08

2011-09-14

2015-02-09

PG-TO220 FullPAK package outline update (creation:2014-12-02)

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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Rev.ꢀ2.2,ꢀꢀ2015-02-09

SP000641916 [INFINEON]

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