SP000945486 [INFINEON]

Insulated Gate Bipolar Transistor,;


型号：	SP000945486
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 栅
文件：	总5页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGC50T120T8RQ

High Speed IGBT in Trench and Fieldstop Technology

Features:

Recommended for:



1200V Trench + Field stop technology

low switching losses

positive temperature coefficient

easy paralleling



power modules

Applications:



high frequency drives

UPS

Welding

Solar inverters

Chip Type

V_CE

I_Cn

Die Size

Package

IGC50T120T8RQ 1200V

50A

7.25 x 6.84 mm2

sawn on foil

^{1 )}nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization

Mechanical Parameters

Die size

7.25 x 6.84

See chip drawing

0.811 x 1.31

49.59

Emitter pad size

Gate pad size

Area total

mm²

Thickness

115

µm

Wafer size

200

Max.possible chips per wafer

Passivation frontside

Pad metal

531

Photoimide

3200 nm AlSiCu

Ni Ag –system

To achieve a reliable solder connection it is strongly

recommended not to consume the Ni layer completely during

production process

Backside metal

Die bond

Electrically conductive epoxy glue and soft solder

Wire bond

Al, <500µm

Reject ink dot size

 0.65mm ; max 1.2mm

for original and

sealed MBB bags

Ambient atmosphere air, Temperature 17°C – 25°C,

< 6 month

Storage environment

Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,

Humidity <25%RH, Temperature 17°C – 25°C, < 6 month

for open MBB bags

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7663Q, L7663S, Edition 1.1, 20.06.2013

IGC50T120T8RQ

Maximum Ratings

Parameter

Symbol

V_{C E}

Value

Unit

1200

Collector-Emitter voltage, T_vj=25 C

DC collector current, limited by T_{vj max}

Pulsed collector current, t_plimited by T_{vj max}

Gate emitter voltage

1 )

I_C

2 )

I_{c, p ul s}

V_{G E}

T_vj

150

20

Operating junction temperature

-40 ... +175

°C

µs

Short circuit data ^{2 )}V_GE= 15V, V_CC= 800V, T_vj= 150°C

t_SC

^{1 )}depending on thermal properties of assembly

^{2 )}not subject to production test - verified by design/characterization

³⁾allowed number of short circuits: <1000; time between short circuits: >1s.

Static Characteristics (tested on wafer), T_vj=25 C

Value

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Collector-Emitter breakdown voltage

Collector-Emitter saturation voltage

Gate-Emitter threshold voltage

Zero gate voltage collector current

Gate-Emitter leakage current

Integrated gate resistor

V_(BR)CES

V_CEsat

V_GE(th)

I_CES

V_GE=0V , I_C=1.7 mA

V_GE=15V, I_C=50A

1200

1.78

5.3

2.05

5.8

2.42

6.3

I_C=1.7mA , V_GE=V_CE

V_CE=1200V , V_GE=0V

V_CE=0V , V_GE=20V

µA



I_GES

120

r_G

Electrical Characteristics (not subject to production test - verified by design / characterization)

Value

Parameter

Symbol

Conditions

Unit

min. typ.

max.

V_GE=15V, I_C=50A,

T_vj=150 C

Collector-Emitter saturation voltage

Input capacitance

V_CEsat

C_{i es}

2.7

V_{C E}=25V,

V_{G E}=0V, f=1MHz

T_vj=25 C

2770

160

Reverse transfer capacitance

C_{re s}

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7663Q, L7663S, Edition 1.1, 20.06.2013

IGC50T120T8RQ

Further Electrical Characteristic

Switching characteristics and thermal properties are depending strongly on module design and mounting

technology and can therefore not be specified for a bare die.

This chip data sheet refers to the device data sheet

tbd

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7663Q, L7663S, Edition 1.1, 20.06.2013

IGC50T120T8RQ

Chip Drawing

E = Emitter

G = Gate

T = Test pad do not contact

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7663Q, L7663S, Edition 1.1, 20.06.2013

IGC50T120T8RQ

Description

AQL 0,65 for visual inspection according to failure catalogue

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Revision History

Version

Subjects (major changes since last revision)

Date

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted in the

human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable

to assume that the health of the user or other persons may be endangered.

Edited by INFINEON Technologies, IFAG IPC TD VLS, L7663Q, L7663S, Edition 1.1, 20.06.2013

SP000945486 [INFINEON]

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