SP001194252 [INFINEON]
Rectifier Diode,;
| 型号： | SP001194252 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总10页 (文件大小：874K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
Silicon Carbide Schottky Diode
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2015-07-22
Industrial Power Control
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!TM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
Type
VDC
IF
QC
Tj,max
Marking
Package
IDH08G120C5
1200V
8A
28nC
175°C D0812C5
PG-TO220-2-1
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description ..................................................................................................................................................2
Table of Contents........................................................................................................................................3
Maximum Ratings .......................................................................................................................................4
Thermal Resistances ..................................................................................................................................4
Electrical Characteristics.............................................................................................................................5
Electrical Characteristics Diagram..............................................................................................................6
Package Drawings......................................................................................................................................9
Revision History........................................................................................................................................10
Disclaimer .................................................................................................................................................10
Final Data Sheet
3
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Symbol
Value
Unit
V
Repetitive peak reverse voltage
VRRM
1200
Continues forward current for Rth(j-c,max)
TC = 151°C, D=1
TC = 135°C, D=1
8.0
11.0
22.8
IF
A
A
TC = 25°C, D=1
Surge non-repetitive forward current,
sine halfwave
TC=25°C, tp=10ms
IF,SM
IF,max
∫ i²dt
70
60
TC=150°C, tp=10ms
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0…960V
530
A
25
18
A²s
V/ns
dv/dt
80
Power dissipation
TC = 25°C
Ptot
126
W
°C
°C
Operating temperature
Storage temperature
Tj
-55…175
-55…150
Tstg
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque
Tsold
260
0.7
°C
M
Nm
M3 and M4 screws
Thermal Resistances
Value
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction – case
Rth(j-c)
Rth(j-a)
-
-
0.92
-
1.19
62
K/W
K/W
Thermal resistance,
junction – ambient
leaded
Final Data Sheet
4
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristics, at Tj=25°C, unless otherwise specified
Value
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Static Characteristic
DC blocking voltage
VDC
VF
Tj = 25°C
1200
-
-
V
V
IF= 8A, Tj=25°C
IF= 8A, Tj=150°C
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
-
-
1.65
2.25
3
1.95
2.85
40
Diode forward voltage
Reverse current
IR
µA
14
210
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Value
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic Characteristics
Total capacitive charge
VR=800V, Tj=150°C
VR
QC
C
-
28
-
nC
pF
Q C(V)dV
C
0
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
365
26
20
-
-
-
Total Capacitance
Final Data Sheet
5
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics Diagram
Figure 1. Power dissipation as a function
of case temperature, Ptot=f(TC),
Figure 2. Diode forward current as function
of temperature, Tj≤175°C,
Rth(j-c),max, parameter D=duty cycle,
Rth(j-c),max
Vth, Rdiff @ Tj=175°C
Figure 3. Typical forward characteristics,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current, IF=f(VF), tp= 10 µs,
parameter: Tj
Final Data Sheet
6
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Figure 5. Typical capacitive charge as function
of current slope1, QC=f(dIF/dt), Tj=150°C
1) Only capacitive charge, guaranteed by design.
Figure 6. Typical reverse current as function
of reverse voltage, IR=f(VR), parameter: Tj
Figure 7. Max. transient thermal impedance,
Zth,jc=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
Final Data Sheet
7
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Figure 9. Typical capacitively stored energy as
function of reverse voltage,
VR
E C(V )VdV
C
0
Final Data Sheet
8
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Package Drawings
Final Data Sheet
9
Rev. 2.0, 2015-07-22
IDH08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Revision History
IIDH08G120C5
Revision: 2015-07-22, Rev. 2.0
Previous Revision:
Revision
2.0
Date Subjects (major changes since last version)
Final data sheet
-
Disclaimer
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2015-07-22
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