SP001379684 [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | SP001379684 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总16页 (文件大小：1541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
TRENCHSTOPTMꢀPerformanceꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀanti-parallelꢀdiode
IKW30N60DTP
600VꢀDuoPackꢀIGBTꢀandꢀdiode
TRENCHSTOPTMꢀPerformanceꢀseries
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
ꢀ
C
E
Features:
TRENCHSTOPTMꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀVCEsat
•ꢀlowꢀturn-offꢀlosses
•ꢀshortꢀtailꢀcurrent
•ꢀlowꢀEMI
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
G
Applications:
•ꢀdrives
•ꢀsolarꢀinverters
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀconvertersꢀwithꢀmediumꢀswitchingꢀfrequency
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.6V 175°C
Marking
Package
IKW30N60DTP
600V
30A
K30DDTP
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
53.0
38.0
A
1)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
90.0
90.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs1)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
39.0
24.0
A
1)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
90.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
200.0
100.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
-
-
0.50 0.75 K/W
0.99 1.55 K/W
Diode thermal resistance,
junction - case
1) Defined by design. Not subject to production test.
4
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ2.00mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.60 1.80
1.94
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ15.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.45 1.70
V
V
1.39
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.48mA,ꢀVCEꢀ=ꢀVGE
4.1
5.1
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40
-
µA
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A
-
-
-
100
-
nA
S
26.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1050
58
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
36
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
130.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ150°C
IC(SC)
-
-
A
137
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
15
21
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.5Ω,ꢀRG(off)ꢀ=ꢀ10.5Ω,
Lσꢀ=ꢀ32nH,ꢀCσꢀ=ꢀ60pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
179
12
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.71
0.42
1.13
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
76
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ1160A/µs
Qrr
0.45
10.2
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
150
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
15
23
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.5Ω,ꢀRG(off)ꢀ=ꢀ10.5Ω,
Lσꢀ=ꢀ32nH,ꢀCσꢀ=ꢀ60pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
220
59
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.99
0.74
1.73
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
134
1.23
16.6
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1160A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
135
-
A/µs
6
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
250
200
150
100
50
100
10
1
tp=1µs
0.1
0
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTj≤175°C;ꢀVGE=15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tj≤175°C)
75
50
25
0
90
80
70
60
50
40
30
20
10
0
VGE=20V
15V
13V
11V
9V
7V
25
50
75
100
125
150
175
0
1
2
3
4
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
(VGE≥15V,ꢀTj≤175°C)
7
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
90
80
70
60
50
40
30
20
10
0
60
45
30
15
0
Tj=25°C
Tj=175°C
VGE=20V
15V
13V
11V
9V
7V
0
1
2
3
4
5
0
2
4
6
8
10
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
3.5
IC=19A
IC=38A
IC=76A
td(off)
tf
td(on)
3.0
2.5
2.0
1.5
1.0
100
tr
10
1
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=10.5Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
8
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
0
10
20
30
40
50
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=30A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=30A,
rG=10.5Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5
4
3
2
1
0
typ.
min.
max.
Eoff
Eon
Ets
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0,48mA)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=10.5Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
9
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
4
3
2
1
0
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
0
10
20
30
40
50
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=30A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=30A,
rG=10.5Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Eoff
Eon
Ets
120V
480V
14
12
10
8
6
4
2
0
300
350
400
450
500
550
600
0
25
50
75
100
125
150
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀTj=175°C,ꢀVGE=15/0V,ꢀIC=30A,
rG=10.5Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Figure 16. Typicalꢀgateꢀcharge
(IC=30A)
10
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
250
200
150
100
50
1000
100
10
Cies
Coes
Cres
0
0
10
20
30
12
13
14
15
16
17
18
19
20
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
(VCE≤400V,ꢀstartꢀatTj=25°C)
16
14
12
10
8
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
6
0.001
4
2
i:
ri[K/W]: 0.01683439 0.09776416 0.1309769 0.2343649 0.02236283 1.3E-3
τi[s]: 3.1E-5 1.8E-4 1.9E-3 0.01018811 0.07263209 1.842143
1
2
3
4
5
6
0
1E-4
1E-6
10
11
12
13
14
15
1E-5
1E-4
0.001
0.01
0.1
1
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. TypicalꢀIGBTꢀtransientꢀthermalꢀimpedance
gate-emitterꢀvoltage
(D=tp/T)
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
11
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
250
200
150
100
50
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1E-4
single pulse
i:
ri[K/W]: 0.04353125 0.2210579 0.3082576 0.3612311 0.05160983 1.5E-3
τi[s]: 2.7E-5 1.4E-4 1.1E-3 7.0E-3 0.04562608 1.816282
1
2
3
4
5
6
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
600
700
800
900 1000 1100 1200 1300
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀdiodeꢀtransientꢀthermalꢀimpedance
asꢀaꢀfunctionꢀofꢀpulseꢀwidth
(D=tp/T)
Figure 22. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
(VR=400V)
2.0
20
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
1.5
1.0
0.5
0.0
15
10
5
0
600
700
800
900 1000 1100 1200 1300
600
700
800
900 1000 1100 1200 1300
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 24. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
0
60
50
40
30
20
10
0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Tj=25°C
Tj=175°C
-50
-100
-150
-200
600
700
800
900 1000 1100 1200 1300
0.0
0.5
1.0
1.5
2.0
2.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
2.4
IF=7,5A
IF=15A
IF=30A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
Package Drawing PG-TO247-3
14
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
15
Rev.ꢀ2.1,ꢀꢀ2016-02-08
IKW30N60DTP
TRENCHSTOPTMꢀPerformanceꢀSeries
RevisionꢀHistory
IKW30N60DTP
Revision:ꢀ2016-02-08,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Release final datasheet
-
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2016.
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16
Rev.ꢀ2.1,ꢀꢀ2016-02-08
相关型号：
SP001422940
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PIN
INFINEON
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