SPB16N50C3_05 [INFINEON]
Cool MOS Power Transistor; 酷MOS功率晶体管
| 型号： | SPB16N50C3_05 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS Power Transistor |
| 文件： | 总12页 (文件大小：501K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPB16N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
@ T
560
0.28
16
V
Ω
A
DS
jmax
R
DS(on)
I
D
• Ultra low gate charge
PG-TO263
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPB16N50C3
Package
PG-TO263
Ordering Code
Q67040-S4642
Marking
16N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPB
Continuous drain current
I
A
D
T = 25 °C
16
10
C
T = 100 °C
C
Pulsed drain current, t limited by T
I
D puls
48
A
p
jmax
Avalanche energy, single pulse
E
460
mJ
AS
I =8, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
0.64
AR
AR
jmax
I =16A, V =50V
D
DD
Avalanche current, repetitive t limited by T
Gate source voltage
I
16
±20
30
A
V
jmax
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
160
W
C
Operating and storage temperature
Reverse diode dv/dt
T , T
dv/dt
-55...+150
°C
V/ns
6)
15
Page 1
Rev. 2.4
2005-11-07
SPB16N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 16 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
-
-
0.78 K/W
3.7
62
80
Thermal resistance, junction - case
thJC
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature, reflow soldering, MSL1
R
R
R
thJC_FP
thJA
thJA FP
sold
260 °C
T
3)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T =25°C unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
500
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =16A
GS
600
-
V
D
(BR)DS
I =675µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
D
GS DS
GS(th)
DSS
V
=500V, V =0V,
µA
I
I
DS
GS
T =25°C
j
-
-
0.1
-
1
100
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
GSS
GS
DS
=10V, I =10A
Ω
DS(on)
GS
D
T =25°C
-
-
-
0.25
0.68
1.5
0.28
-
-
j
T =150°C
j
R
f=1MHz, open drain
Gate input resistance
G
Page 2
Rev. 2.4
2005-11-07
SPB16N50C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
14
-
S
fs
DS
D
I =10A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
1600
800
30
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
64
Effective output capacitance,
energy related
C
GS
o(er)
=0V to 400V
DS
5)
-
124
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=380V, V =0/10V,
-
-
-
-
10
8
50
8
-
-
-
-
ns
d(on)
DD
GS
I =16A, R =4.3Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=380V, I =16A
-
-
-
7
36
66
-
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=380V, I =16A,
Gate charge total
DD
D
=0 to 10V
GS
V
=380V, I =16A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated asP =E *f.
AR
AV
3
4
Soldering temperature for TO-263: 220°C, reflow
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
DSS
oss
DS
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
DSS
oss
DS
o(tr)
6
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Page 3
Rev. 2.4
2005-11-07
SPB16N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
16
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
48
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
420
7
40
1100
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =380V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
F
rr
I
rrm
T =25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
Ws/K
SPB
0.012
0.023
0.043
0.149
0.17
SPB
R
R
R
R
K/W
C
0.0002495
0.0009406
0.001298
0.00362
0.009484
0.077
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
Rth5
C
th5
R
0.069
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 2.4
2005-11-07
SPB16N50C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P
P
= f (T )
tot
C
tot
C
SPP16N50C3
170
W
36
W
140
120
100
80
28
24
20
16
12
8
60
40
20
4
0
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V
)
)
DS
D
DS
D
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10 -1
10 -1
tp = 10 ms
DC
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
V
V
V
V
DS
DS
Page 5
Rev. 2.4
2005-11-07
SPB16N50C3
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC
p
parameter: D = t /T
parameter: D = t /t
p
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 -4
10 0
10 -1
10 -2
10 -3
10 -4
D = 0.5
D = 0.2
D = 0.1
D = 0.5
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
p
t
t
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
35
60
20V
A
A
7V
20V
7V
6.5V
6V
25
20
15
10
5
40
30
20
10
0
6V
5V
5.5V
4.5V
4V
5V
4.5V
0
0
5
10
15
25
0
5
10
15
25
V
V
V
V
DS
DS
Page 6
Rev. 2.4
2005-11-07
SPB16N50C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 10 A, V = 10 V
j
GS
D
GS
SPP16N50C3
2
1.6
Ω
4V
4.5V
5V
6V
Ω
1.2
1
1.2
0.8
0.4
0
8V
20V
0.8
0.6
0.4
0.2
0
98%
typ
°C
0
5
10
15
20
30
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 16 A pulsed
p
D
SPP16N50C3
60
16
A
V
50
45
40
35
30
25
20
15
10
5
Tj = 25°C
12
V
0,2
DS max
10
8
0,8 VDS max
Tj = 150°C
6
4
2
0
0
0
1
2
3
4
5
6
7
8
10
0
10 20 30 40 50 60 70 80
100
V
GS
nC
Q
V
Gate
Page 7
Rev. 2.4
2005-11-07
SPB16N50C3
13 Forward characteristics of body diode
I = f (V
14 Avalanche SOA
= f (t
)
I
)
AR
F
SD
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPP16N50C3
16
A
A
12
10
8
10 1
T
= 25°C
j(start)
6
10 0
T
j(start) = 125°C
Tj = 25 °C typ
4
2
0
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
µs
AR
t
V
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
= f (T )
E
V
(BR)DSS
AS
j
j
par.: I = 8 , V = 50 V
D
DD
SPP16N50C3
0.5
600
V
mJ
570
560
550
540
530
520
510
500
490
480
470
460
450
0.3
0.2
0.1
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Page 8
Rev. 2.4
2005-11-07
SPB16N50C3
17 Avalanche power losses
= f (f )
18 Typ. capacitances
C = f (V
P
)
DS
AR
parameter: E =0.64mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
450
pF
W
Ciss
350
300
250
200
150
100
50
10 3
10 2
Coss
10 1
Crss
10 0
0
10 2
10 3
10 4
10 5
10 6
0
100
200
300
500
DS
Hz
V
V
f
19 Typ. C
stored energy
oss
E
=f(V
)
oss
DS
9
µJ
7
6
5
4
3
2
1
0
0
100
200
300
500
DS
V
V
Page 9
Rev. 2.4
2005-11-07
SPB16N50C3
Definition of diodes switching characteristics
Page 10
Rev. 2.4
2005-11-07
63%161ꢀꢁ&ꢂ
PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22
Rev. 2.4
PDJHꢃꢄꢄ
ꢀꢁꢁ5ꢂ11-07
SPB16N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 12
Rev. 2.4
2005-11-07
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