SPD08N50C3AT [INFINEON]
Power Field-Effect Transistor;
| 型号： | SPD08N50C3AT |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总11页 (文件大小：691K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
@ T
560
0.6
7.6
V
Ω
A
DS
jmax
R
DS(on)
I
D
• Worldwide best R
in TO-252
DS(on)
PG-TO252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
; available in Halogen free mold compounda)
Type
SPD08N50C3
Package
PG-TO252
Ordering Code
Q67040-S4569
Marking
08N50C3
Maximum Ratings, at T = 25°C, unless otherwise specified
C
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
7.6
4.6
C
T = 100 °C
C
22.8
230
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
D puls
p
jmax
mJ
E
AS
I =5.5A, V =50V
D
DD
1)
E
0.5
Avalanche energy, repetitive t limited by T
AR
AR
jmax
I =7.6A, V =50V
D
DD
7.6
±20
30
A
V
Avalanche current, repetitive t limited by T
Gate source voltage
I
AR
AR
jmax
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
83
W
Power dissipation, T = 25°C
C
°C
V/ns
Operating and storage temperature
Reverse diode dv/dt
T , T
dv/dt
-55... +150
6)
15
a) non-Halogen free (OPN: SPD08N50C3BT); Halogen free (OPN: SPD08N50C3AT)
2.6
2013-07-31
Rev.
Page 1
SPD08N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 7.6 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
1.5 K/W
75
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
-
-
75
50
260 °C
2
2)
@ 6 cm cooling area
Soldering temperature, reflow soldering, MSL3
T
sold
3)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
500
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =7.6A
600
-
V
GS
D
(BR)DS
I =350µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=500V, V =0V,
DS GS
µA
DSS
T =25°C,
-
-
-
0.5
-
-
1
100
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V, I =4.6A,
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.5
1.5
1.2
0.6
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
2.6
Rev.
2013-07-31
Page 2
SPD08N50C3
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
,
-
6
-
fs
DS
D
DS(on)max
I =4.6A
D
Input capacitance
C
V
=0V, V =25V,
GS DS
-
-
-
-
750
350
12
-
-
-
-
pF
iss
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
GS
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
56
pF
ns
o(er)
=0V to 400V
DS
5)
C
-
30
-
o(tr)
Turn-on delay time
t
V
=400V, V =0/10V,
-
-
-
-
6
5
60
7
-
-
-
-
d(on)
DD
GS
I =7.6A, R =12Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=400V, I =7.6A
-
-
-
3
17
32
-
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=400V, I =7.6A,
Gate charge total
DD
D
=0 to 10V
GS
V
=400V, I =7.6A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
4
Soldering temperature for TO-263: 220°C, reflow
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS
.
5
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
6
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max
.
Identical low-side and high-side switch.
2.6
Rev.
Page 3
2013-07-31
SPD08N50C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
7.6
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
22.8
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =400V, I =I ,
370
3.6
25
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
F
I
rrm
700
A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.024
0.046
0.085
0.308
0.317
0.112
K/W
0.00012
0.0004578
0.000645
0.001867
0.004795
0.045
R
R
R
R
Rth5
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
C
th4
C
th5
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
2.6
Rev.
2013-07-31
Page 4
SPD08N50C3
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 2
SPD08N50C3
100
W
A
80
70
60
50
40
30
20
10
0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
DC
10 -2
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
°C
T
V
V
DS
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 1
24
K/W
20V
10V
A
7V
8V
10 0
10 -1
10 -2
10 -3
6,5V
6V
16
12
8
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
5,5V
single pulse
5V
4
4,5V
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
5
10
15
25
s
V
DS
t
V
p
2.6
Rev.
2013-07-31
Page 5
SPD08N50C3
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
10
13
A
4V
Ω
20V
8V
11
6.5V
4.5V
8
6V
10
9
8
7
6
5
4
3
2
1
0
7
5V
6
5.5V
6V
5
6.5V
8V
5.5V
4
3
2
1
0
20V
5V
4.5V
4V
0
2
4
6
8
10 12 14 16 18 20 22
25
0
2
4
6
8
10
12
15
V
DS
A
I
V
D
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
DS(on)
j
D
GS
DS
D
DS(on)max
parameter : I = 4.6 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPD08N50C3
3.4
24
A
Ω
25°C
20
18
16
14
12
10
8
2.8
2.4
2
150°C
1.6
1.2
0.8
0.4
0
6
98%
typ
4
2
0
°C
-60
-20
20
60
100
180
0
2
4
6
10
GS
V
V
T
j
2.6
Rev.
2013-07-31
Page 6
SPD08N50C3
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
V
)
I = f (V )
GS
Gate
F SD
parameter: I = 7.6 A pulsed
parameter: T , tp = 10 µs
D
10 2
SPD08N50C3
SPD08N50C3
16
V
A
12
10 1
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
nC
0
5
10 15 20 25 30 35 40
50
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Avalanche SOA
= f (t )
12 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T ≤ 150 °C
par.: I = 5.5 A, V = 50 V
j
D
DD
260
mJ
8
A
220
200
180
160
140
120
100
80
6
5
4
3
2
1
0
T(START)=25°C
j
T(START)=125°C
j
60
40
20
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
°C
µs
t
T
AR
j
2.6
Rev.
2013-07-31
Page 7
SPD08N50C3
13 Drain-source breakdown voltage
= f (T )
14 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.5mJ
AR
SPD08N50C3
500
600
V
W
570
560
550
540
530
520
510
500
490
480
470
460
450
300
200
100
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
MHz
T
f
j
15 Typ. capacitances
C = f (V )
16 Typ. C
stored energy
oss
E
=f(V )
DS
oss
DS
parameter: V =0V, f=1 MHz
GS
10 4
4
pF
µJ
Ciss
10 3
10 2
10 1
10 0
3
2.5
2
Coss
1.5
1
Crss
0.5
0
0
100
200
300
500
DS
0
100
200
300
500
DS
V
V
V
V
2.6
Rev.
2013-07-31
Page 8
SPD08N50C3
Definition of diodes switching characteristics
2013-07-31
2.6
Rev.
Page 9
SPD08N50C3
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
2.6
Rev.
2013-07-31
Page 10
SPD08N50C3
2.6
Rev.
2013-07-31
Page 11
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