SPD09P06PLGBTMA1 [INFINEON]
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN;
| 型号： | SPD09P06PLGBTMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN |
| 文件： | 总9页 (文件大小：576K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD09P06PL G
SIPMOS =Power-Transistor
Product Summary
Feature
V
-60
0.25
-9.7
V
DS
• P-channel
R
DS(on)
• Enhancement mode
I
A
D
• Logic Level
• 175°C operating temperature
PG-TO252-3
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Drain
pin 2
Gate
pin1
Type
SPD09P06PL G
Package
PG-TO252-3 Yes
Lead free
Source
pin 3
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
-9.7
-6.8
C
T =100°C
C
-38.8
Pulsed drain current
I
D puls
T =25°C
C
70
mJ
Avalanche energy, single pulse
E
AS
I =-9.7 A , V =-25V, R =25
D
DD GS
E
4.2
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
AR
jmax
dv/dt
kV/µs
I =-9.7A, V =-48, di/dt=200A/µs, T
DS jmax
=175°C
S
Gate source voltage
Power dissipation
V
V
W
±20
42
GS
P
tot
T =25°C
C
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +175
55/175/56
Rev 2.6
Page 1
2011-10-12
SPD09P06PL G
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
R
-
-
-
-
3.6 K/W
100
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
thJA
R
thJA
-
-
-
-
75
50
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
-60
-1
typ. max.
Static Characteristics
Drain-source breakdown voltage
V
-
-
V
(BR)DSS
V
=0V, I =-250µA
GS
D
-1.5
-2
Gate threshold voltage, V = V
V
GS(th)
GS
DS
I =-250µA
D
µA
Zero gate voltage drain current
I
DSS
V
=-60V, V =0V, T =25°C
-
-
-
-0.1
-10
-10
-1
-100
-100 nA
0.4
DS
GS
j
V
=-60V, V =0V, T =150°C
GS
DS
j
Gate-source leakage current
I
GSS
V
=-20V, V =0V
GS
DS
-
-
0.3
0.2
Drain-source on-state resistance
R
DS(on)
V
=-4.5V, I =-5.4A
GS
D
0.25
Drain-source on-state resistance
R
DS(on)
V
=-10V, I =-6.8A
GS
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.6
Page 2
2011-10-12
SPD09P06PL G
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I *R
DS(on)max
,
1.8
3.5
-
S
D
I =-5.4
D
Input capacitance
C
V
=0V, V =-25V,
DS
-
-
-
-
360
103
40
450 pF
130
50
iss
GS
f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
oss
C
rss
t
V
=-30V, V =-4.5V,
GS
11
17
ns
d(on)
DD
I =-5.4, R =6
D
G
Rise time
t
V
=-30V, V =-4.5V,
-
-
-
168
49
89
252
74
134
r
DD GS
I =-5.4A, R =6
Turn-off delay time
Fall time
t
d(off)
D
G
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=-48V, I =-9.7A
-
-
-
1.3
5.1
14
2
7.5
21
nC
gs
gd
g
DD
D
V
=-48V, I =-9.7A,
Gate charge total
DD
D
V
=0 to -10V
GS
V
=-48V, I =-9.7A
-
-4.1
-
V
A
Gate plateau voltage
V
DD
D
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
-9.7
I
S
C
Inverse diode direct current,
I
-38.8
SM
pulsed
V
=0V, I =-9.7A
-
-
-
-1.1
52
64
-1.4
76
96
V
ns
nC
Inverse diode forward voltage V
GS
F
SD
Reverse recovery time
t
V =-30V, I =l ,
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
F
rr
Rev 2.6
Page 3
2011-10-12
SPD09P06PL G
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
C
D
C
parameter: V
10 V
GS
SPD09P06PL
SPD09P06PL
50
-11
A
W
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
190
°C
°C
T
T
C
C
3 Safe operating area
I = f ( V
4 Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
C
p
10 1
-10 2
SPD09P06PL
SPD09P06PL
K/W
t
= 11.0µs
p
A
10 0
-10 1
100 µs
10 -1
10 -2
D = 0.50
0.20
1 ms
-10 0
0.10
10 ms
0.05
DC
single pulse
10 -3
0.02
0.01
-10 -1
10 -4
-10 -1
-10 0
-10 1
-10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
V
s
t
V
DS
p
Rev 2.6
Page 4
2011-10-12
SPD09P06PL G
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
SPD09P06PL
SPD09P06PL
-24
A
0.8
Ptot = 42W
c
d
e
f
g
h
i
V
[V]
GS
a
k
j
-20
-18
-16
-14
-12
-10
-8
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-7.0
-8.0
b
c
d
e
f
i
0.6
0.5
0.4
0.3
0.2
0.1
0
h
g
h
i
g
e
j
f
k
-6
j
-4
k
d
b
V
[V] =
GS
c
d
e
f
g
h
i
j
k
-2
c
a
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0
0
0
-2
-4
-6
-8
-12
0
-2 -4 -6 -8 -10 -12 -14 -16
-20
V
A
I
V
D
DS
7 Typ. transfer characteristics
I = f ( V ); V 2 x I x R
8 Typ. forward transconductance
g = f(I ); T =25°C
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
25
4
S
A
3
2.5
2
15
10
5
1.5
1
0.5
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
10
V
V
V
D
I
GS
Rev 2.6
Page 5
2011-10-12
SPD09P06PL G
9 Drain-source on-state resistance
= f (T )
10 Gate threshold voltage
V = f (T )
GS(th)
parameter: V = V , I = -250 µA
GS DS D
R
DS(on)
j
j
parameter : I = -6.8 A, V = -10 V
D
GS
SPD09P06PL
2.4
V
0.75
98 %
2
1.8
1.6
1.4
1.2
1
0.6
0.55
0.5
typ.
2 %
0.45
0.4
0.35
0.3
98%
0.8
0.6
0.4
0.2
0
0.25
0.2
typ
0.15
0.1
0.05
0
°C
-60
-20
20
60
100
140
200
-60
-20
20
60
100
180
°C
T
T
j
j
11 Typ. capacitances
C = f (V
12 Forward character. of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
GS
10 3
-10 2
SPD09P06PL
A
C
iss
pF
-10 1
C
C
oss
rss
10 2
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
-10 -1
0
-5
-10
-15
-20
-30
DS
0
-0.4 -0.8 -1.2 -1.6
-2
-2.4
-3
V
V
V
V
SD
Rev 2.6
Page 6
2011-10-12
SPD09P06PL G
13 Typ. avalanche energy
= f (T )
14 Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
par.: I = -9.7 A , V = -25 V, R = 25
parameter: I = -9.7 A pulsed
D
DD
GS
D
SPD09P06PL
80
-16
mJ
V
60
50
40
30
20
10
0
-12
-10
-8
-6
-4
-2
0
V
0,2
DS max
0,8 VDS max
25
45
65
85 105 125 145
185
0
4
8
12
16
20
28
Gate
°C
T
nC
Q
j
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD09P06PL
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
140
200
°C
T
j
Rev 2.6
Page 7
2011-10-12
SPD09P06PL G
Package outline: PG-TO252-3
Rev 2.6
page 8
2011-10-12
SPD09P06PL G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev 2.6
Page 8
2011-10-12
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