SPDX5N60S5 [INFINEON]

Power Field-Effect Transistor, 1.9A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3;


型号：	SPDX5N60S5
厂家：	Infineon
描述：	Power Field-Effect Transistor, 1.9A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 脉冲晶体管
文件：	总5页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SPUX5N60S5

SPDX5N60S5

Target data sheet

Cool MOS Power Transistor

• N-Channel

• Enhancement mode

• Ultra low gate charge

• Avalanche rated

• dv/dt rated

Pin 1

Pin 2

Pin 3

• 150°C operating temperature

Type

DS(on)

Marking

Package

Ordering Code

SPUX5N60S5 600 V 1.8 A

SPDX5N60S5

X5N60S5

P-TO251-3-1

P-TO252

3 Ω

Maximum Ratings , at T = 25 ° C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

1.8

1.1

T = 100 °C

3.6

Pulsed drain current , t = 1ms

D puls

T = 25 °C

Avalanche energy, single pulse

I = 1.8 A, V = 50 V, R = 25 Ω

Reverse diode dv/dt

dv/dt

kV/µs

I = 1.8 A, V <V , di/dt = 100 A/µs,

DSS

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

tot

T = 25 °C

Operating temperature

-55 ...+150

-55 ... +150

55/150/56

°C

Storage temperature

stg

IEC climatic category; DIN IEC 68-1

Semiconductor Group

04 / 1998

SPUX5N60S5

SPDX5N60S5

Target data sheet

Electrical Characteristics

Parameter

Symbol

Values

typ. max.

Unit

at T = 25 °C, unless otherwise specified

min.

Thermal Characteristics

K/W

Thermal resistance, junction - case

Thermal resistance, junction - ambient

(Leaded and through-hole packages)

SMD version, device on PCB:

@ min. footprint

thJC

100

thJA

tbd

@ 6 cm cooling area

Static Characteristics

Drain- source breakdown voltage

600

(BR)DSS

GS(th)

= 0 V, I = 0.25 mA

Gate threshold voltage, V = V

3.5

4.5

5.5

I = 80 µA, T = 25 °C

µA

Zero gate voltage drain current, V =V

DSS

0.5

= 0 V, T = 25 °C

tbd

= 0 V, T = 150 °C

Gate-source leakage current

= 20 V, V = 0 V

100 nA

GSS

Drain-Source on-state resistance

tbd

Ω

DS(on)

= 10 V, I = 1.1 A

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

Semiconductor Group

04 / 1998

SPUX5N60S5

SPDX5N60S5

Target data sheet

Electrical Characteristics

Parameter

Symbol

Values

Unit

at T = 25 °C, unless otherwise specified

min.

typ.

tbd

220

140

max.

Characteristics

Transconductance

≥2*I *R

, I = 1.1 A

DS(on)max D

Input capacitance

= 0 V, V = 25 V, f = 1 MHz

tbd pF

tbd

iss

Output capacitance

= 0 V, V = 25 V, f = 1 MHz

oss

rss

Reverse transfer capacitance

= 0 V, V = 25 V, f = 1 MHz

tbd

Turn-on delay time

= 350 V, V = 10 V, I = 1.8 A,

tbd

tbd ns

d(on)

R = 50 Ω

Rise time

tbd

= 350 V, V = 10 V, I = 1.8 A,

GS D

R = 50 Ω

Turn-off delay time

= 350 V, V = 10 V, I = 1.8 A,

d(off)

R = 50 Ω

Fall time

= 350 V, V = 10 V, I = 1.8 A,

GS D

R = 50 Ω

Semiconductor Group

04 / 1998

SPUX5N60S5

SPDX5N60S5

Target data sheet

Electrical Characteristics

Parameter

Symbol

Values

typ. max.

Unit

at T = 25 °C, unless otherwise specified

min.

Gate Charge Characteristics

Gate-source charge

tbd

I = 1.8 A, V = 350 V

Gate-drain charge

I = 1.8 A, V = 350 V

Total gate charge

= 350 V, I = 1.8 A, V = 0 to 10 V

tbd

Reverse Diode

Inverse diode continuous forward current

1.8

3.6

1.2

T = 25 °C

Inverse diode direct current,pulsed

T = 25 °C

Inverse diode forward voltage

tbd

= 0 V, I = 1.8 A

Reverse recovery time

V = 100 V, I =I , di /dt = 100 A/µs

µC

Reverse recovery charge

V = 100 V, I =l , di /dt = 100 A/µs

F S

Semiconductor Group

04 / 1998

SPUX5N60S5

SPDX5N60S5

Target data sheet

Edition 7.97

Published by Siemens AG,

Bereich Halbleiter Vetrieb,

Werbung, Balanstraße 73,

81541 München

Attention please!

As far as patents or other rights of third parties are concerned, liability is only assumed for components,

not for applications, processes and circuits implemented within components or assemblies.

The information describes a type of component and shall not be considered as warranted characteristics.

Terms of delivery and rights to change design reserved.

For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany

or the Siemens Companies and Representatives worldwide (see address list).

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Siemens Office, Semiconductor Group.

Siemens AG is an approved CECC manufacturer.

Packing

Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales

office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport.

For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to

invoice you for any costs incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose!

Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or

systems with the express written approval of the Semiconductor Group of Siemens AG.

1)A critical component is a component used in a life-support device or system whose failure can reasonably be

expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of

that device or system.

2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or

maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the

user or other persons may be endangered.

Errata Sheet 26.10.98

New RDSON-LIMIT

Semiconductor Group

04 / 1998

SPDX5N60S5 [INFINEON]

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