SPI11N65C3 [INFINEON]

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated; 新的革命高电压技术,超低栅极电荷定期额定雪崩
SPI11N65C3
元器件型号: SPI11N65C3
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
新的革命高电压技术,超低栅极电荷定期额定雪崩

晶体 栅极 晶体管 开关 脉冲 局域网
PDF文件: 总15页 (文件大小:561K)
下载文档:  下载PDF数据表文档文件
型号参数:SPI11N65C3参数

SPI11N65C3HKSA1

Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

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0 INFINEON

SPI11N65C3XK

暂无描述

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0 INFINEON

SPI12N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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22 INFINEON

SPI12N50C3

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

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23 INFINEON

SPI12N50C3

Cool MOS⑩ Power Transistor

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24 INFINEON

SPI150F4BN

150 Watts FLEX ATX Power Supply

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19 SPI

SPI150FA

150 Watts FLEX ATX Power Supply Remote ON/OFF function

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37 SPI

SPI150TNH

150 Watts TFX Power Supply

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19 SPI

SPI15N60C3

Cool MOS⑩ Power Transistor

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51 INFINEON

SPI15N60CFD

CoolMOSTM Power Transistor Intrinsic fast-recovery body diode

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14 INFINEON

SPI15N60CFDHKSA1

Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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0 INFINEON

SPI15N65C3

CoolMOSTM Power Transistor Features Extreme dv/dt rated

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13 INFINEON

SPI15N65C3HKSA1

Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

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0 INFINEON

SPI16N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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13 INFINEON

SPI16N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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22 INFINEON