SPN03N60S5 [INFINEON]
Cool MOS⑩ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPN03N60S5 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS⑩ Power Transistor |
| 文件： | 总9页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN03N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
600
1.4
0.7
V
Ω
A
DS
R
DS(on)
I
D
• Ultra low gate charge
SOT-223
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
4
3
2
1
VPS05163
Type
SPN03N60S5
Package
SOT-223
Ordering Code
Q67040-S4203
Marking
03N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
0.7
0.4
A
T = 70 °C
A
3
Pulsed drain current, t limited by T
I
D puls
p
jmax
T = 25 °C
A
Gate source voltage
V
V
P
V
±20
30
1.8
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
W
A
°C
Operating and storage temperature
T , T
-55... +150
j
stg
Page 1
Rev. 2.1
2004-03-30
SPN03N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
20
V/ns
V
= 480 V, I = 3.2 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
-
25
-
K/W
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
R
thJS
R
thJA
-
-
110
-
62
70
2
1)
@ 6 cm cooling area
Soldering temperature,
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 600
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =3.2A
GS
-
700
V
D
(BR)DS
I =135µΑ, V =V
3.5
4.5
5.5
Gate threshold voltage
V
GS(th)
D
GS DS
V
=600V, V =0V,
µA
Zero gate voltage drain current
I
DSS
DS
GS
T =25°C,
-
-
0.5
-
1
50
j
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
DS
=10V, I =2A,
Ω
DS(on)
GS
D
T =25°C
-
-
1.26
3.4
1.4
-
j
T =150°C
j
Page 2
Rev. 2.1
2004-03-30
SPN03N60S5
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥2*I *R ,
DS(on)max
-
0.73
-
S
fs
DS
D
I =0.4A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
-
-
-
-
-
-
-
440
230
12
35
20
-
-
-
-
-
-
-
pF
iss
GS
DS
f=1MHz
C
oss
C
rss
t
V
=350V, V =0/10V,
ns
d(on)
DD
GS
I =0.7 A, R =20Ω
t
D
G
r
Turn-off delay time
Fall time
t
120
30
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
V
=350V, I =0.7 A
-
-
-
3
7.5
12.8
-
-
-
nC
V
gs
DD
D
Gate to drain charge
Q
gd
V
V
=350V, I =0.7 A,
Gate charge total
Q
g
DD
D
=0 to 10V
GS
V
=350V, I =0.7 A
-
8
-
Gate plateau voltage
V(plateau)
DD
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 3
Rev. 2.1
2004-03-30
SPN03N60S5
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
0.7
A
Inverse diode continuous
forward current
I
A
S
Inverse diode direct current,
I
-
-
3
SM
pulsed
V
=0V, I =I
GS
-
-
-
0.85
200
0.9
1.05 V
Inverse diode forward voltage
Reverse recovery time
V
F
S
SD
t
V =350V, I =I ,
-
-
ns
µC
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
F
rr
Page 4
Rev. 2.1
2004-03-30
SPN03N60S5
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
A
D
parameter : D = 0 , T =25°C
A
10 1
SPN03N60S5
1.9
W
A
1.6
1.4
1.2
1
10 0
10 -1
0.8
0.6
0.4
0.2
0
tp = 0.001 ms
tp = 0.01 ms
10 -2
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 -3
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
A
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 2
8.5
A
K/W
10 1
10 0
7
6
5
4
3
2
1
0
9V
D = 0.5
D = 0.2
10 -1
10 -2
10 -3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7V
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
0
4
8
12
16
20
26
V
s
t
V
p
DS
Page 5
Rev. 2.1
2004-03-30
SPN03N60S5
5 Drain-source on-state resistance
= f (T )
6 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
DS(on)
j
D GS DS D DS(on)max
parameter : I = 0.4 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPN03N60S5
8
8
Ω
A
6
5
4
3
2
1
0
6
5
4
3
2
1
0
98%
typ
°C
-60
-20
20
60
100
180
0
4
8
12
20
GS
V
V
T
j
7 Typ. gate charge
= f (Q
8 Forward characteristics of body diode
I = f (V )
V
)
GS
Gate
F
SD
parameter: I = 0.7 A pulsed
parameter: T , tp = 10 µs
D
10 1
SPN03N60S5
SPN03N60S5
16
V
A
0.2 VDS max
0.8 VDS max
12
10 0
10
8
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
2
10 -2
0
nC
0
2
4
6
8
10 12 14 16
20
Gate
0
0.4
0.8
1.2
1.6
2
2.4
3
V
V
Q
SD
Page 6
Rev. 2.1
2004-03-30
SPN03N60S5
9 Drain-source breakdown voltage
= f (T )
10 Typ. capacitances
V
C = f (V )
(BR)DSS
j
DS
parameter: V =0V, f=1 MHz
GS
10 4
pF
SPN03N60S5
720
V
10 3
10 2
10 1
10 0
10 -1
Ciss
680
660
640
620
600
580
560
540
Coss
Crss
-60
-20
20
60
100
180
0
10 20 30 40 50 60 70 80
100
°C
V
T
V
DS
j
Definition of diodes switching characteristics
Page 7
Rev. 2.1
2004-03-30
SPN03N60S5
SOT223
0ꢀ1
1ꢀ6
0ꢀ2
0ꢀ1
6ꢀ5
3
A
0ꢀ1 max
B
4
+0ꢀ2
accꢀ to
DIN 6784
1
2
3
0ꢀ28
0ꢀ04
2ꢀ3
0ꢀ1
0ꢀ7
4ꢀ6
M
M
0ꢀ25
A
0ꢀ25
B
Page 8
Rev. 2.1
2004-03-30
SPN03N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 9
Rev. 2.1
2004-03-30
相关型号：
SPN03N60S5HUSA1
Power Field-Effect Transistor, 0.7A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
INFINEON
SPN03N60S5_05
New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated
INFINEON
SPN04N60S5HUSA1
Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明