SPP11N80C3_08 [INFINEON]
Cool MOS Power Transistor; 酷MOS功率晶体管
| 型号： | SPP11N80C3_08 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS Power Transistor |
| 文件： | 总10页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP11N80C3
CoolMOSTM Power Transistor
Features
Product Summary
V DS
800
0.45
64
V
• New revolutionary high voltage technology
• Extreme dv/dt rated
R DS(on)max @ Tj = 25°C
Q g,typ
W
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
PG-TO220-3
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
Package
Marking
SPP11N80C3
PG-TO220-3
11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
11
7.1
Continuous drain current
A
Pulsed drain current2)
33
I D,pulse
E AS
I D=2.2 A, V DD=50 V
I D=11 A, V DD=50 V
Avalanche energy, single pulse
470
0.2
mJ
2),3)
2),3)
E AR
Avalanche energy, repetitive t AR
I AR
11
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V DS=0…640 V
static
50
dv /dt
V GS
V/ns
V
±20
±30
156
-55 ... 150
60
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 2.9
2008-10-15
SPP11N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
11
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
33
dv /dt
4
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
0.8
62
K/W
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10s
T sold
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=11 A
V GS(th) V DS=V GS, I D=0.68 mA
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
800
-
-
870
3
-
-
V
2.1
3.9
V DS=800 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
20
-
µA
V DS=800 V, V GS=0 V,
T j=150 °C
-
-
-
100
-
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
100 nA
V GS=10 V, I D=7.1 A,
T j=25 °C
R DS(on)
Drain-source on-state resistance
0.39
0.45
W
V GS=10 V, I D=7.1 A,
T j=150 °C
-
-
1.05
1.2
-
-
R G
Gate resistance
Rev. 2.9
f =1 MHz, open drain
W
page 2
2008-10-15
SPP11N80C3
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
1600
65
-
-
pF
V GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related5)
C o(er)
-
-
50
-
-
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related6)
C o(tr)
140
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
25
15
72
10
-
-
-
-
ns
V DD=400 V,
V GS=0/10 V, I D=11 A,
R G=7.5 ? , T j=25 °C
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
8
-
-
nC
Q gd
30
64
5.5
V DD=640 V, I D=11 A,
V GS=0 to 10 V
Q g
85
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V GS=0 V, I F=I S=11 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
t rr
Reverse recovery time
-
-
-
550
10
-
-
-
ns
µC
A
V R=400 V,
I F=I S=11 A,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
33
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
I
=ID, di/dt=200A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
SD
5)
6)
C
C
is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
o(er)
o(tr)
Rev. 2.9
page 3
2008-10-15
SPP11N80C3
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P tot=f(T C)
102
160
140
120
100
80
limited by on-state
resistance
1 µs
10 µs
101
100 µs
1 ms
DC
10 ms
60
100
40
20
10-1
0
1
10
100
1000
0
25
50
75
100
125
150
T C [°C]
V DS [V]
3 Max. transient thermal impedance
ZthJC=f(tP)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C; t p=10 µs
parameter: V GS
parameter: D=t p/T
100
40
20 V
0.5
30
10 V
0.2
0.1
10-1
20
10
0
6 V
0.05
0.02
5.5 V
0.01
single pulse
5 V
4.5 V
10-2
10-5
10-4
10-3
10-2
10-1
0
5
10
15
20
25
t p [s]
V DS [V]
Rev. 2.9
page 4
2008-10-15
SPP11N80C3
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
21
18
15
12
9
2
1.8
1.6
1.4
20 V
10 V
6 V
5.5 V
10 V
6.5 V
5 V
20 V
6 V
6
4.5 V
4 V
5 V
4.5 V
1.2
1
3
0
0
5
10
15
20
25
0
5
10
15
I D [A]
20
25
30
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=7.1 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
1.2
1
40
25 °C
30
20
10
0
0.8
150 °C
0.6
98 %
typ
0.4
0.2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.9
page 5
2008-10-15
SPP11N80C3
9 Typ. gate charge
V GS=f(Q gate); I D=11 A pulsed
parameter: V DD
10 Forward characteristics of reverse diode
I F=f(V SD); t p=10 µs
parameter: T j
102
10
150°C (98%)
8
160 V
25 °C
640 V
25°C (98°C)
101
150 °C
6
4
100
2
10-1
0
0
0.5
1
1.5
2
0
10
20
30
40
50
60
70
Q gate [nC]
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=2.2 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
500
960
920
880
840
800
760
720
680
400
300
200
100
0
25
50
75
100
T j [°C]
125
150
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.9
page 6
2008-10-15
SPP11N80C3
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
104
12
10
8
Ciss
103
102
6
Coss
4
101
Crss
2
100
0
0
0
100 200 300 400 500 600 700 800
V DS [V]
100 200 300 400 500 600 700 800
V DS [V]
Rev. 2.9
page 7
2008-10-15
SPP11N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15
SPP11N80C3
PG-TO220-3: Outline
Rev. 2.9
page 9
2008-10-15
SPP11N80C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.9
page 10
2008-10-15
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