SPP18P06P H [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;
| 型号： | SPP18P06P H |
| 厂家： | 
Infineon |
| 描述： | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| 文件： | 总9页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP18P06P H
SIPMOS® Small-Signal-Transistor
Product Summary
Features
VDS
-60
0.13
-18.7
V
A
• P-Channel
RDS(on),max
ID
• Enhancement mode
• Avalanche rated
• dv /dt rated
PG-TO220-3-1
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to AEC Q101
Type
Package
Tape and reel information
50pcs/tube
Marking
Lead free
PG-TO220-3
SPP18P06PH
Yes
18P06P
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
steady state
-18.7
I D
T A=25 °C
T A=100 °C
T A=25 °C
Continuous drain current
A
-13.2
I D,pulse
-74.8
Pulsed drain current
E AS
151
8
I D=18.7 A, R GS=25
Avalanche energy, single pulse
mJ
Avalanche energy, periodic limited by
Tjmax
E AR
I D=18.7 A, V DS=48 V,
di /dt =-200 A/µs,
-6
Reverse diode dv /dt
dv /dt
kV/µs
V
T
j,max=175 °C
V GS
±20
Gate source voltage
Power dissipation
T A=25 °C1)
P tot
81.1
W
T j, T stg
"-55 ... +175"
Class 1C( >1000V <2000V)
260 °C
Operating and storage temperature
ESD class
°C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev1.92
page 1
2014-11-21
SPP18P06P H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
-
-
-
-
-
-
-
1.85 K/W
62
Thermal resistance,
junction - ambient, leaded
R thJA
R thJA
SMD version, device on PCB:
minimal footprint
62
40
K/W
6 cm2 cooling area1)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=-250 µA
DS=V GS, I D=-
Drain-source breakdown voltage
Gate threshold voltage
-60
-
-
V
-2.1
2.7
-4
1000 µA
V
DS=-60 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-0.1
-1
µA
T j=25 °C
V
DS=-60 V, V GS=0 V,
-
-
-
-10
-10
102
-100
T j=150 °C
I GSS
V
V
GS=-20 V, V DS=0 V
Gate-source leakage current
-100 nA
R DS(on)
GS=-10 V, I D=-13.2 A
Drain-source on-state resistance
130
-
mΩ
|V DS|>2|I D|R DS(on)max
I D=-13.2 A
,
g fs
Transconductance
5
10
S
2
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air.
Rev1.92
page 2
2014-11-21
SPP18P06P H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
690
230
95
860 pF
290
V
GS=0 V, V DS=-25 V,
C oss
C rss
t d(on)
t r
f =1 MHz
120
12.0
5.8
25
18.0 ns
8.7
V
DD=-30 V, V GS=-
10 V, I D=-13.2 A,
R G=2.7 Ω
t d(off)
t f
Turn-off delay time
Fall time
37
11
16.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
-4.1
-11
-5.5 nC
-17
Q gd
V
DD=-48 V, I D=-
18.6 A, V GS=0 to -10 V
Q g
-21
-28
V plateau
Gate plateau voltage
-5.94
-
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
18.60
-74.8
T A=25 °C
I S,pulse
V
GS=0 V, I F=-18.6 A,
V SD
t rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-0.99
70
-1.33
V
T j=25 °C
105 ns
208 nC
V R=30 V, I F=|I S|,
di F/dt =100 A/µs
Q rr
139
Rev1.92
page 3
2014-11-21
SPP18P06P H
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); |V GS|≥10 V
20
15
10
5
90
80
70
60
50
40
30
20
10
0
0
0
0
40
80
A [°C]
120
160
40
80
120
160
T
A [°C]
T
3 Safe operating area
I D=f(V DS); T A=25 °C1); D =0
4 Max. transient thermal impedance
thJA=f(t p)
Z
parameter: t p
parameter: D =t p/T
101
10 µs
100 µs
limited by on-state
resistance
1 ms
101
100
10 ms
0.5
100
DC
0.2
0.1
0.05
0.02
10-1
10-5
10
10-3
10-2
10-1
100
101
102
-4
0.01
10-1
10-2
single pulse
0.1
1
10
100
-V DS [V]
t
p [s]
Rev1.92
page 4
2014-11-21
SPP18P06P H
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
40
400
-20 V
35
-10 V
320
30
-4 V
-4.5 V
-7 V
-5.5 V
-5 V
25
-6 V
240
20
15
-7 V
-6 V
160
80
0
-5.5 V
-10 V
10
5
-5 V
-20 V
-4.5 V
-4 V
0
0
2
4
6
8
0
5
10
15
20
-ID [A]
25
30
35
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
8
6
4
2
0
14
12
10
8
6
4
125 °C
25 °C
2
0
0
1
2
3
4
5
0
5
10
15
20
25
30
-V GS [V]
-I D [A]
Rev1.92
page 5
2014-11-21
SPP18P06P H
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-13.2 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-1000 µA
4
3.5
3
350
300
250
max.
2.5
typ.
200
98 %
2
min.
150
1.5
1
typ.
100
50
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
25 °C, typ
103
102
101
101
150 °C, typ
Ciss
Coss
Crss
100
150 °C, 98%
25 °C, 98%
10-1
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
3
-V DS [V]
-V SD [V]
Rev1.92
page 6
2014-11-21
SPP18P06P H
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-18.6 A pulsed
V
I
parameter: T j(start)
parameter: V DD
102
16
14
12
10
8
25 °C
12 V
30 V
48 V
101
100 °C
125 °C
6
4
2
0
0
5
10
15
20
25
30
100
100
101
102
103
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-250 µA
70
V GS
Q g
65
60
55
50
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev1.9
2
page 7
2014
-
11 21
-
SPP18P06P H
Package Outline: PG-TO220-3
Rev1.92
page 8
2014-11-21
SPP18P06P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
).
the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev1.92
page 9
2014-11 21
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