SPP21N50C3_07 [INFINEON]
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge; 在220超低栅极电荷新的革命高电压技术，全球最佳的RDS（on ）
| 型号： | SPP21N50C3_07 |
| 厂家： | 
Infineon |
| 描述： | New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge |
| 文件： | 总14页 (文件大小：876K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
@ T
560
0.19
21
V
Ω
A
DS
jmax
R
DS(on)
I
D
• Worldwide best R
in TO 220
DS(on)
PG-TO220FP
P G-TO262 PG-TO220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
3
2
1
• Ultra low effective capacitances
• Improved transconductance
Type
Package
Ordering Code
Marking
SPP21N50C3
PG-TO220
Q67040-S4565
21N50C3
SPI21N50C3
SPA21N50C3
PG-TO262
PG-TO220FP
Q67040-S4564
SP000216364
21N50C3
21N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
21
13.1
21
C
1)
T = 100 °C
13.1
63
C
Pulsed drain current, t limited by T
I
D puls
63
A
p
jmax
Avalanche energy, single pulse
E
690
690
mJ
AS
I =10A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
1
1
AR
AR
jmax
I =21A, V =50V
D
DD
Avalanche current, repetitive t limited by T
Gate source voltage
I
21
±20
30
21
±20
30
A
V
AR
jmax
AR
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
208
34.5
W
C
Operating and storage temperature
T
dv/dt
,
T
-55...+150
15
°C
V/ns
Reverse diode dv/dt 7)
Rev. 3.0
Page 1
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 21 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
0.6 K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.6
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
@ 6 cm cooling area
-
-
-
-
35
-
62
-
260 °C
2
3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
4)
Electrical Characteristics, at T =25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
500
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =21A
600
-
V
GS
D
(BR)DS
I =1000µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
V
=500V, V =0V,
DS GS
µA
DSS
T =25°C
-
-
-
0.1
-
-
1
100
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V, I =13.1A
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.16
0.54
0.53
0.19
-
j
T =150°C
j
R
f=1MHz, open drain
-
Gate input resistance
G
Rev. 3.0
Page 2
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R ,
DS DS(on)max
-
18
-
fs
D
I =13.1A
D
Input capacitance
C
C
C
C
V
=0V, V =25V,
GS DS
-
-
-
-
2400
1200
30
-
-
-
-
pF
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
5)
V
=0V, V =400V
87
Effective output capacitance,
energy related
GS
DS
o(er)
6)
-
181
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=380V, V =0/10V,
-
-
-
-
10
5
67
4.5
-
-
-
-
ns
d(on)
DD
GS
I =21A,
Rise time
t
D
r
R =3.6Ω
Turn-off delay time
Fall time
t
G
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=380V, I =21A
-
-
-
10
50
95
-
-
-
nC
V
gs
gd
g
DD
D
V
V
=380V, I =21A,
Gate charge total
DD
D
=0 to 10V
GS
V
=380V, I =21A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
5
Soldering temperature for TO-263: 220°C, reflow
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
oss
DS
o(er)
DSS
6
C
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
oss
DS
o(tr)
DSS
7
ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.0
Page 3
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
T =25°C
-
-
21
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
63
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
450
9
60
1200
1.2
720
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =380V, I =I ,
ns
µC
A
rr
R
F
S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
-
-
-
F
rr
I
rrm
T =25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
0.00769
0.015
0.029
0.114
SPP_I
SPA
0.00769
0.015
0.029
0.16
SPA
R
R
R
R
Rth5
R
K/W
C
th1
0.0003763 0.0003763 Ws/K
th1
th2
th3
th4
C
0.001411
0.001931
0.005297
0.012
0.001411
0.001931
0.005297
0.008659
0.412
th2
C
th3
C
th4
C
th5
0.136
0.059
0.319
2.523
C
0.091
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Rev. 3.0
Page 4
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
= f (T )
P
P
tot
tot
C
C
SPP21N50C3
35
240
W
W
200
180
160
140
120
100
80
25
20
15
10
5
60
40
20
0
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
T
°C
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V
)
)
D
DS
D
DS
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 0.001 ms
tp = 0.01 ms
10 -1
10 -1
tp = 1 ms
tp = 10 ms
DC
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
V
V
V
V
DS
DS
Rev. 3.0
Page 5
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC
p
parameter: D = t /T
parameter: D = t /t
p
p
10 0
10 1
K/W
K/W
10 -1
10 -2
10 -3
10 0
10 -1
10 -2
D = 0.5
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -4
10 -3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
p
s
p
t
t
7 Typ. output characteristic
8 Typ. output characteristic
I = f (V ); T =25°C
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
70
40
A
A
Vgs = 20V
Vgs = 7V
Vgs = 20V
Vgs = 7V
30
Vgs = 6.5V
Vgs = 6V
50
Vgs = 5.5V
25
Vgs = 6V
Vgs = 5V
40
30
20
10
0
20
15
10
5
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
Vgs = 4.5V
Vgs = 4V
V
0
0
5
10
15
25
0
5
10
15
25
V
V
V
DS
DS
Rev. 3.0
Page 6
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R
R
= f (T )
DS(on)
D
DS(on) j
parameter: T =150°C, V
parameter : I = 13.1 A, V = 10 V
j
GS
D
GS
SPP21N50C3
1.5
1.1
Ω
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 20V
Ω
0.9
0.6
0.3
98%
typ
°C
0
5
10
15
20
25
30
40
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 21 A pulsed
p
D
SPP21N50C3
70
16
V
A
Tj = 25°C
12
50
40
30
20
10
0
0,2 VDS max
Tj = 150°C
10
0,8 VDS max
8
6
4
2
0
0
2
4
6
10
GS
0
20
40
60
80
100
nC
140
Gate
V
V
Q
Rev. 3.0
Page 7
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
13 Forward characteristics of body diode
I = f (V
14 Avalanche SOA
= f (t
)
I
)
AR
F
SD
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPP21N50C3
20
A
A
10 1
Tj(Start)=25°C
10
10 0
Tj = 25 °C typ
Tj(Start)=125°C
5
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
V
µs
AR
t
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS
j
par.: I = 10 A, V = 50 V
D
DD
SPP21N50C3
750
mJ
600
V
600
550
500
450
400
350
300
250
200
150
100
50
570
560
550
540
530
520
510
500
490
480
470
460
450
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Rev. 3.0
Page 8
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
17 Avalanche power losses
= f (f )
18 Typ. capacitances
C = f (V
P
)
AR
DS
parameter: E =1mJ
parameter: V =0V, f=1 MHz
AR
GS
10 5
500
pF
W
10 4
Ciss
10 3
300
200
100
Coss
10 2
Crss
10 1
10 0
0
10 4
10 5
10 6
0
100
200
300
500
DS
Hz
V
V
f
19 Typ. C
stored energy
oss
E
=f(V
)
oss
DS
10
µJ
6
4
2
0
0
50 100 150 200 250 300 350 400
500
V
V
DS
Rev. 3.0
Page 9
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
Definition of diodes switching characteristics
Rev. 3.0
Page 10
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 3.0
Page 11
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
PG-TO220-3-31/-3-111:Outline/Fully isolated package (2500VAC; 1 minute)
Rev. 3.0
Page 12
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Rev. 3.0
Page 13
2007-08-30
SPP21N50C3
SPI21N50C3, SPA21N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 3.0
Page 14
2007-08-30
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