ST173C10CFH1LPBF [INFINEON]
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3;
| 型号： | ST173C10CFH1LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3 栅 栅极 |
| 文件： | 总9页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25180 rev. B 04/00
ST173C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
330A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST173C..C
330
Units
A
@ T
55
°C
hs
hs
IT(RMS)
610
A
@ T
25
°C
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4680
4900
110
A
A
I2t
KA2s
KA2s
100
VDRM/VRRM
1000 to1200
15 to 30
V
t range
q
µs
TJ
- 40 to 125
°C
1
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ST173C..C Series
Bulletin I25180 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST173C..C
repetitive peak voltage
V
non-repetitive peak voltage
V
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5570
2800
1620
800
50
180oel
50Hz
400Hz
760
730
660
590
1200
1260
1030
1080
4920
2460
1000Hz
600
350
50
490
270
50
1200
850
50
1030
720
50
1390
680
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
VDRM
VDRM
V DRM
Rise of on-state currentdi/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/µs
°C
40
55
40
55
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST173C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
330 (120)
55 (85)
610
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
110
100
77
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
71
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST173C..C Series
Bulletin I25180 rev. B 04/00
On-state Conduction
Parameter
ST173C..C Units Conditions
VTM
Max. peak on-state voltage
2.07
1.55
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
1.61
0.87
0.77
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST173C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
15
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST173C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST173C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST173C..C Series
Bulletin I25180 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST173C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
case to heatsink
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
Ordering Information Table
Device Code
ST 17
3
C
12
C
H
K
1
3
7
1
2
4
5
6
8
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- C = Ceramic Puk
- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
- C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
- Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100 200 400
- t code
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
--
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
DP
DK
DJ
DH
EP
EK
EJ
EH
FP * --
FK * HK
FJ
FH
t (µs)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
HJ
HH
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST173C..C Series
Bulletin I25180 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25° 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
1 30
1 20
1 10
1 00
90
ST 173C ..C S eries
(Sin g le S id e C oo le d )
ST173C..C Series
(Single Side Cooled)
R
(D C ) = 0.17 K /W
R
(D C) = 0.17 K/W
th J-hs
thJ-hs
80
C onduction Angle
C ondu ction Period
70
80
60
70
30 °
60 °
50
60
30°
90°
40
60°
180°
90°
120°
50
30
180°
120°
D C
40
20
0
40
80
120
160
200
240
0
50
1 00
15 0
2 0 0 25 0
30 0
35 0
Average On-state Current (A)
Av era g e O n -sta te C u rren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST173C..C Series
Bulletin I25180 rev. B 04/00
1 30
1 20
1 10
1 00
90
1 30
ST 17 3C ..C Se ries
(D ou b le Sid e C o ole d )
ST 173C ..C S e rie s
(D o ub le Sid e C oole d )
1 20
1 10
1 00
90
R
(D C ) = 0.08 K /W
R
(D C ) = 0.08 K/W
th J- hs
thJ-h s
C ondu ction Period
C on duction Angle
80
80
70
70
30 °
60
60°
60
90 °
50
1 20°
18 0°
50
40
60°
1 20°
40
30
3 0°
2 0 0
9 0°
180°
D C
6 00
30
20
0
1 00
3 0 0
40 0
5 0 0
70 0
0
0
1
50
1 00 15 0 2 0 0 2 50 3 00 35 0 40 0
A ve ra g e O n - sta te C u rre n t (A )
Av era g e O n -sta te C urr en t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 00 0
90 0
80 0
70 0
60 0
50 0
40 0
30 0
20 0
10 0
0
1 4 00
1 2 00
1 0 00
8 00
6 00
4 00
2 00
0
180°
120°
90°
60°
30°
D C
1 80°
1 20°
90°
60°
30°
R M S Lim it
R M S Lim it
Cond uction Period
ST 17 3C ..C Ser ies
Cond uction Angle
S T 173C ..C Se ries
T
= 1 25° C
J
T
= 125 °C
J
5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0
A vera g e O n -sta te C u rre n t (A )
0
10 0
2 0 0
3 00
4 00
50 0
6 0 0
7 00
A ve ra g e O n -sta te C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
5000
4500
4000
3500
3000
2500
2000
1500
A t A n y R a te d Loa d C on d itio n A n d W ith
M a x im u m N on R e p etitive S urg e C u rre n t
V e rsu s P ulse T ra in D u ra tion . C o n tro l
O f C on d u ctio n M a y No t B e M a in ta in ed .
R a ted
V
A p p lied F ollo w in g S u rg e.
RRM
In itia l T
= 125° C
J
@
@
60 H z 0.0 083
50 H z 0.0 100
s
s
In itia l T
=
125° C
N o V olta g e R ea p p lie d
Ra te d R ea p p lied
J
V
RRM
ST 17 3C ..C S eries
ST 173 C ..C S eries
10
1 00
0.01
0.1
1
Numb er Of Equa l Amp litude H alf C ycle C urren t Pulses (N)
P u lse T ra in D u ra tion (s)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
6
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ST173C..C Series
Bulletin I25180 rev. B 04/00
10000
1000
100
1
S T 173 C ..C Se ries
ST173C ..C Series
0 .1
S tea d y S ta te V a lu e
0.17 K /W
(S in g le S id e C o oled )
0.08 K /W
R
=
th J- hs
0.0 1
T
= 25°C
J
J
R
=
th J- hs
T
= 125°C
(D o u b le S id e C o ole d )
(D C O p e ra tio n )
0 .0 01
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
0 .00 1
0. 01
0. 1
1
10
S q u a re W a ve P u lse D ur atio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
250
200
150
100
50
1 60
I
= 500 A
TM
ST173C..C Series
1 40
1 20
1 00
80
I
= 500 A
300 A
TM
T
= 125 °C
J
300 A
200 A
200 A
100 A
100 A
50 A
60
50 A
40
S T1 73 C ..C S erie s
125 °C
20
T
=
J
0
0
0
20
4 0
60
80
100
0
20
40
60
80
100
R a te O f Fa ll O f F orw a r d C u rren t - d i/d t (A /µ s)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
1 E3
1 E2
Snub ber circuit
Snu bber circuit
R
C
V
s
= 47 ohm s
= 0.22 µF
R
s
= 47 oh ms
s
C
V
s
=
=
0.22 µF
80%
= 80%
V
V
D
D
DR M
DR M
50 Hz
100
500
400 200
1000
50 Hz
100
400 200
500
1000
1500
1500
2500
2500
3000
3000
ST173C ..C Series
Sinusoidal pulse
5000
ST173C..C Series
Sinusoidal pulse
5000
T
= 55°C
tp
C
T
= 40 °C
t p
C
1 E4
1E41 E1
1E 1
1E1
1E2
1 E3
1 E2
1E3
1E4
P u lse Ba se w id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 13 - Frequency Characteristics
7
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ST173C..C Series
Bulletin I25180 rev. B 04/00
1 E4
Snu bber circuit
Snub ber circuit
R
C
V
= 47 ohms
= 0.22 µF
R
C
V
= 47 ohms
= 0.22 µ F
= 80% V
s
s
s
D
s
= 80%
V
DRM
D
DRM
50 Hz
100
1 E3
200
50 Hz
400
100
200
500
1000
400
500
tp
1500
1000
1500
2000
2500
3000
2000
2500
3000
ST173C..C Series
Trapezoidal pulse
ST173C..C Series
Trapezoidal pulse
T
= 40°C
C
T
= 55°C
C
tp
5000
di/dt = 50A/µs
di/dt = 50A/µs
5000
1 E2
1 E1
1E2
1E3
1E41E1
1E2
1 E3
1 E4
Pu lse B a sew id th (µ s)
P ulse B a sew idth (µ s)
Fig. 14 - Frequency Characteristics
1 E4
1 E3
1 E2
1 E1
Sn ubber circuit
Snub ber circuit
R
C
V
= 47 ohms
= 0.22 µF
R
C
= 47 ohms
= 0.22 µF
s
s
s
s
= 80%
V
V
= 80%
V
DRM
D
D
DRM
50 Hz
100
200
50 Hz
400
100
200
400
500
500
1000
1000
1500
1500
2500
2500
3000
3000
5000
10000
5000
ST173C ..C Series
Trapezoidal p ulse
ST173C..C Series
Trap ezoida l pu lse
10000
T
=
40°C
C
tp
T
= 55°C
d i/dt = 100A/µs
C
tp
di/dt = 100A/µs
1E1
1E14E 4
1 E2
1E 3
1E4
1E1
1E2
1E3
P u lse B ase w id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 15 - Frequency Characteristics
1 E5
1 E4
1 E3
1 E2
1 E1
ST173C..C Series
Recta ngular pulse
di/d t = 50A/µs
tp
20 joules per pulse
20 joules per p ulse
10
10
5
3
5
2
1
3
2
0.5
0.3
1
0.5
0.2
0.3
0.2
0.1
0.1
ST173C ..C Series
Sinusoidal pulse
t p
1E 1
1 E2
1E3
1E141E1
E1
1E2
1 E3
1 E4
P u lse B a sew id th (µ s)
P u lse Ba sew id th (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST173C..C Series
Bulletin I25180 rev. B 04/00
1 00
1 0
1
Re c ta n g ula r ga te p ulse
(1) PG M
(2) PG M
(3) PG M
(4) PG M
=
=
=
=
10 W , tp
20 W , tp
40 W , tp
60 W , tp
=
=
=
=
20m s
10m s
5m s
a ) R ec om m en d e d loa d lin e f or
rate d d i/d t : 20V , 10 oh m s; tr <= 1 µs
b ) R eco m m en d ed lo a d lin e fo r
< = 30% ra ted di/dt : 10V , 10oh m s
3.3m s
(a )
tr< = 1 µ s
(b )
(2)
(3) (4)
(1)
V G D
IG D
D evice : ST 173C ..C S eries F re q u en c y Lim ite d b y PG (A V )
0.1 1 0 1 00
0.1
0.0 01
0.0 1
1
In sta n ta n eou s G a te C u rren t (A)
Fig. 17 - Gate Characteristics
9
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Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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ST173C10CFH3LP
INVERTER GRADE THYRISTORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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ST173C10CFH3LPBF
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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