ST173S10PFK0PBF [INFINEON]
Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM),;型号: | ST173S10PFK0PBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM), 栅 栅极 |
文件: | 总9页 (文件大小:235K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25246 10/06
ST173SPbF SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
175A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Lead Free
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST173S
175
Units
A
@ TC
85
°C
IT(RMS)
ITSM
275
4680
A
A
@50Hz
@ 60Hz
@50Hz
@ 60Hz
4900
A
I2t
110
KA2s
KA2s
V
100
VDRM/VRRM
1000 to 1200
15 to 25
- 40 to 125
case style
TO-209AB (TO-93)
t
range
µs
q
TJ
°C
1
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ST173SPbF Series
Bulletin I25246 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST173S
repetitivepeakvoltage
V
non-repetitivepeakvoltage
V
10
12
1000
1200
1100
1300
40
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
790
810
760
510
50
100μs
4510
1970
1050
480
50
180oel
50Hz
400Hz
500
450
320
290
550
540
3310
1350
1000Hz
330
170
50
190
80
490
300
50
680
280
50
A
V
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
50
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Case temperature
50
60
50
85
-
-
-
-
A/μs
60
85
60
85
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-stateConduction
Parameter
ST173S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
175
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
275
DC @ 75°C case temperature
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
110
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
A
reapplied
100% VRRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage Initial TJ = TJ max
reapplied
100
KA2s
77
100% VRRM
71
reapplied
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
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2
ST173SPbF Series
Bulletin I25246 10/06
On-stateConduction
Parameter
ST173S
2.07
Units Conditions
VTM
Max. peak on-state voltage
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.55
1.58
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
r 1
t
Low level value of forward
slope resistance
0.87
0.82
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST173S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
µs
Min Max
t
Max. turn-off time
15
25
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST173S
500
Units Conditions
dv/dt
Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/μs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
40
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST173S
60
Units Conditions
PGM
W
A
TJ = TJ max, f = 50Hz, d% = 50
10
10
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max., rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST173SPbF Series
Bulletin I25246 10/06
ThermalandMechanicalSpecifications
Parameter
ST173S
Units
°C
Conditions
TJ
T
Max. junction operating temperature range -40 to 125
Max. storage temperature range
-40 to 150
0.105
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.04
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
31
Nm
Non lubricated threads
Lubricated threads
(275)
(Ibf-in)
24.5
Nm
(210)
(Ibf-in)
wt
Approximate weight
Case style
280
g
TO-209AB(TO-93)
See Outline Table
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conductionangle Sinusoidalconduction Rectangularconduction Units
Conditions
180°
120°
0.016
0.019
0.012
0.020
90°
60°
30°
0.025
0.036
0.060
0.027
0.037
0.060
K/W
TJ = TJ max.
OrderingInformationTable
Device Code
ST 17
3
S
12
P
F
K
0
PbF
4
7
1
6
11
2
3
5
8
9
10
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn off
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = Stud base 3/4" 16UNF-2A
dv/dt - tq combinations available
M = Stud base metric threads M16 x 1.5
dv/dt(V/µs) 20
50
100 200 400
7
8
9
-
-
-
Reapplied dv/dt code (for t test condition)
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
FP *
--
--
t code
q
DP
DK
DJ
DH
EP
EK
EJ
EH
t (µs)
0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
Criticaldv/dt:
FK * HK
q
FJ
HJ
FH
HH
*Standard part number.
All other types available only on request.
-
-
10
11
None = 500V/µsec(Standardvalue)
L
= 1000V/µsec(Specialselection)
LeadFree
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4
ST173SPbF Series
Bulletin I25246 10/06
OutlineTable
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
Fast-on Terminals
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
CaseStyleTO-209AB(TO-93)
3/4"-16UNF-2A *
All dimensions in millimeters (inches)
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
CaseStyleTO-209AB(TO-93)Flag
All dimensions in millimeters (inches)
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST173SPbF Series
Bulletin I25246 10/06
130
130
120
110
100
90
ST173SSeries
(DC) = 0.105 K/W
ST173SSeries
R
R
(DC) = 0.105 K/W
thJC
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
30°
90°
120°
80
60°
180°
90°
120°
180°
DC
80
70
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
0
40 80 120 160 200 240 280
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
350
R
t
0
.
1
h
180°
120°
90°
K
S
/
A
W
300
=
0
.
2
0.
K
0
/
W
8
K
/
60°
30°
250
200
150
100
50
W
-
0
0
D
.
3
e
K
/
l
W
t
a
R
.
4
K
RMS Lim it
/
W
W
0
.
5
K
/
Conduction Angle
ST173SSeries
T = 125°C
J
0
0
20 40 60 80 100 120 140 160 1
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
8
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
0
.
1
K
/
W
0
.
1
6
K
/
W
0
0
.
3
K
/
W
W
RMS Lim it
Conduction Period
ST173SSeries
.
5
K
/
T = 125°C
J
0
0
40 80 120 160 200 240
Average On-state Current (A)
2
8
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-state Power Loss Characteristics
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6
ST173SPbF Series
Bulletin I25246 10/06
5000
4500
4000
3500
3000
2500
2000
1500
4500
4000
3500
3000
2500
2000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST173SSeries
ST173SSeries
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 5 - Maximum Non-repetitive Surge Current
10000
1
St e a d y St a t e V a l u e
= 0.105 K/W
ST173SSeries
R
thJC
(DC Operation)
0.1
0.01
1000
T= 25°C
J
T= 125°C
J
ST1 73S Se r ie s
0.001
100
0.001
0.01
0.1
1
10
1
1.5
2
2.5
3
3.5
4
4.5
Square Wave Pulse Duration (s)
InstantaneousOn-state Voltage (V)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
160
140
120
100
80
250
200
150
100
50
I
= 500 A
TM
I
= 500 A
300 A
200 A
100 A
50 A
TM
ST173SSeries
300 A
200 A
T = 125 °C
J
100 A
60
50 A
40
ST173SSeries
20
T = 125 °C
J
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of On-state Current - di/dt (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
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ST173SPbF Series
Bulletin I25246 10/06
1E4
Snubber circuit
Snubber circ uit
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
R
C
V
= 47 o hm s
= 0.22 µF
= 80%V
s
s
s
s
D
D
DRM
DRM
400
50 Hz
100
200
500
1000
1E3
100
50 Hz
200
400
500
1000
1500
2000
2500
1500
2000
ST1 7 3S Series
Sinusoidal pulse
3000
ST1 7 3S Se rie s
Sinusoidal pulse
2500
T
= 85°C
tp
C
T
= 60°C
3000
tp
C
1E2
1E1
1E1
1
1E4
1E2
1E3
1E4
1E2
1E3
Pulse Ba sew id th (µs)
Pulse Ba sew id t h (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snubbercircuit
Snubber circuit
R
C
V
= 47 o hm s
= 0.22 µF
= 80%V
s
s
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
D
D
DRM
DRM
50 Hz
100
200
50 Hz
100
200
400
400
500
500
1000
1500
1000
1500
2000
2500
3000
5000
2000
2500
3000
ST173SSeries
Trapezoidal pulse
ST1 73 S Se r ie s
Trapezoidal pulse
= 85 ° C
T
= 60°C
C
T
C
di/dt =50A/µs
5000
tp
di/dt = 50A/µs
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h ( µs)
Fig. 12 - Frequency Characteristics
Snubber circuit
1E4
1E3
1E2
1E1
Snubbercircuit
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
R
C
V
= 47 o hm s
= 0.22 µF
= 80%V
s
s
s
s
D
D
DRM
DRM
50 Hz
50 Hz
100
200
100
200
400
500
400
500
1000
1500
1000
1500
2000
2500
5000
10000
2000
2500
ST173SSeries
Trapezoidal pulse
ST17 3S Se rie s
5000
10000
Trapezoidal pulse
= 85°C
di/dt = 100A/µs
T
C
= 60°C
T
C
tp
tp
di/dt =100A/µs
1E1
1E1
1E2
1E3
1E
4
1E2
1E3
1E4
Pulse Ba se w id t h ( µs)
Pulse Ba sew id th ( µs)
Fig. 13 - Frequency Characteristics
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8
ST173SPbF Series
Bulletin I25246 10/06
1E5
1E4
1E3
1E2
1E1
ST1 73 S Se rie s
Rectangular pulse
di/dt = 50A/µs
tp
20 joulesper pulse
20 joulesper pulse
7.5
4
10
2
5
1
3
2
0.5
1
0.3
0.5
0.2
0.1
0.4
0.3
0.2
ST1 7 3S Se r ie s
0.1
Sinusoidal pulse
tp
1E1
1E2
1E3
1E1411E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba se w id t h ( µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
(b)
(2)
(3) (4)
(1)
VGD
IGD
Device: ST173SSeries
0.1
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 15 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10 /06
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9
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