ST180C [INFINEON]

PHASE CONTROL THYRISTORS Hockey Puk Version; 相位控制晶闸管曲棍球北辰版本
ST180C
型号: ST180C
厂家: Infineon    Infineon
描述:

PHASE CONTROL THYRISTORS Hockey Puk Version
相位控制晶闸管曲棍球北辰版本

文件: 总7页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Previous Datasheet  
Index  
Next Data Sheet  
4/B  
ST180C..C SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
350A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AB (A-PUK)  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AB (A-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST180C..C  
350  
Units  
A
@ T  
55  
°C  
hs  
hs  
IT(RMS)  
ITSM  
I2t  
660  
A
@ T  
25  
°C  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
5000  
5230  
125  
A
A
KA2s  
KA2s  
114  
V
DRM/VRRM  
400 to 2000  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
To Order  
 
Previous Datasheet  
Index  
Next Data Sheet  
ST
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number  
peak and off-state voltage  
repetitive peak voltage  
V
V
04  
08  
12  
16  
18  
20  
400  
500  
800  
900  
1200  
1600  
1800  
2000  
1300  
1700  
1900  
2100  
ST180C..C  
30  
12  
On-state Conduction  
Parameter  
ST180C..C  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
350 (140)  
55 (85)  
A
180° conduction, half sine wave  
double side (single side) cooled  
°C  
IT(RMS) Max. RMS on-state current  
660  
5000  
5230  
4200  
4400  
125  
@ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
114  
KA2s  
88  
81  
I2t  
Maximum I2t for fusing  
1250  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
1.08  
1.14  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
2222222222222  
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
slope resistance  
1.18  
1.14  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(I > π x IT(AV)),TJ = TJ max.  
mΩ  
rt2  
High level value of on-state  
slope resistance  
VTM  
IH  
Max. on-state voltage  
1.96  
600  
V
I = 750A, TJ = TJ max, t = 10ms sine pulse  
pk p  
Maximum holding current  
Max. (typical) latching current  
mA  
TJ = TJ max, anode supply 12V resistive load  
IL  
1000 (300)  
To Order  
Previous Datasheet  
ST
Index  
Next Data Sheet  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
Fig. 5- On-state Power Loss Characteristics  
Fig. 6- On-state Power Loss Characteristics  
To Order  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Previous Datasheet  
Index  
Next Data Sheet  
ies  
Fig. 9 - On-state Voltage Drop Characteristics  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
To Order  
Fig. 11 - Gate Characteristics  
Previous Datasheet  
Index  
Next Data Sheet  
es  
Switching  
Parameter  
ST180C..C  
1000  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
A/µs  
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
V = 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V  
t
Typical turn-off time  
100  
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
Blocking  
Parameter  
ST180C..C  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max linear to 80% rated VDRM  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
30  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
23  
Triggering  
Parameter  
ST180C..C  
Units Conditions  
PGM  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
Maximum peak gate power  
10  
2.0  
3.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
180  
MAX.  
-
TJ = - 40°C  
TJ = 25°C  
IGT  
DC gate current required  
to trigger  
90  
40  
150  
mA  
V
Max. required gate trigger/ cur-  
-
-
TJ = 125°C  
TJ = - 40°C  
TJ = 25°C  
TJ = 125°C  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
2.9  
1.8  
1.2  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
mA  
V
TJ = TJ max  
VGD  
0.25  
To Order  
 
Previous Datasheet  
Index  
Next Data Sheet  
ST10C.Sries  
Thermal and Mechanical Specification  
Parameter  
ST180C..C  
Units Conditions  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 125  
-40 to 150  
°C  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.17  
0.08  
DC operation single side cooled  
K/W  
K/W  
DC operation double side cooled  
R
thC-hs Max. thermal resistance,  
case to heatsink  
0.033  
0.017  
4900  
(500)  
50  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, ± 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AB (A-PUK)  
See Outline Table  
RthJ-hs Conduction  
12  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.015  
0.018  
0.024  
0.035  
0.060  
0.015  
0.019  
0.024  
0.035  
0.060  
0.011  
0.019  
0.026  
0.036  
0.060  
0.011  
0.019  
0.026  
0.037  
0.061  
60°  
30°  
Ordering Information Table  
Device Code  
ST 18  
0
C
20  
C
1
7
8
1
5
2
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
2222222222222  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
C = Puk Case TO-200AB (A-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt:None = 500V/µsec (Standard value)  
8
-
L
= 1000V/µsec (Special selection)  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
es  
Outline Table  
ANODE TO GATE  
CREEPAGE DISTANCE: 7.62 (0.30) MIN.  
STRIKE DISTANCE: 7.12 (0.28) MIN.  
19 (0.75)  
0.3 (0.01) MIN.  
DIA. MAX.  
13.7 / 14.4  
(0.54 / 0.57)  
0.3 (0.01) MIN.  
19 (0.75)  
GATE TERM. FOR  
1.47 (0.06) DIA.  
PIN RECEPTACLE  
DIA. MAX.  
38 (1.50) DIA MAX.  
Case Style TO-200AB (A-PUK)  
All dimensions in millimeters (inches)  
2 HOLES 3.56 (0.14) x  
1.83 (0.07) MIN. DEEP  
6.5 (0.26)  
4.75 (0.19)  
23  
25°± 5°  
42 (1.65) MAX.  
28 (1.10)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
To Order  

相关型号:

ST180C02C0

Silicon Controlled Rectifier, 660A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
INFINEON

ST180C02C0PBF

Silicon Controlled Rectifier, 660A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-200AB
INFINEON

ST180C04C

Silicon Controlled Rectifier, 700A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
INFINEON

ST180C04C0

PHASE CONTROL THYRISTORS
INFINEON

ST180C04C0L

PHASE CONTROL THYRISTORS
INFINEON

ST180C04C0LPBF

Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2
INFINEON

ST180C04C0PBF

Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2
INFINEON

ST180C04C1

PHASE CONTROL THYRISTORS
INFINEON

ST180C04C1L

PHASE CONTROL THYRISTORS
INFINEON

ST180C04C1LPBF

Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, LEAD FREE, APUK-2
VISHAY

ST180C04C1LPBF

Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2
INFINEON

ST180C04C2

PHASE CONTROL THYRISTORS
INFINEON