ST183C04CEM1L [INFINEON]
Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3;
| 型号： | ST183C04CEM1L |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 690A I(T)RMS, 370000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3 |
| 文件： | 总9页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25178 rev. B 04/00
ST183C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
370A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST183C..C
Units
370
55
A
°C
@ T
hs
IT(RMS)
690
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4900
5130
120
110
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 800
10 to 20
V
t range
q
µs
TJ
- 40 to 125
°C
1
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ST183C..C Series
Bulletin I25178 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST183C..C
repetitive peak voltage
V
non-repetitive peak voltage
V
04
08
400
800
500
900
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5450
2760
1600
800
50
180oel
50Hz
400Hz
770
730
660
600
1220
1270
1160
1090
4960
2420
1000Hz
600
350
50
490
270
50
1210
860
50
1040
730
50
1370
680
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
V DRM
50
40
50
55
-
-
-
-
A/µs
°C
Heatsink temperature
40
55
40
55
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST183C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
370 (130)
55 (85)
690
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4900
5130
4120
4310
120
110
85
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
78
I2√t
Maximum I2√t for fusing
1200
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST183C..C Series
Bulletin I25178 rev. B 04/00
On-state Conduction
Parameter
ST183C..C Units Conditions
VTM
Max. peak on-state voltage
1.80
1.40
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
1.45
0.67
0.58
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST183C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J = TJ max, VDRM = rated VDRM
1000
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
10
20
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST183C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST183C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST183C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
case to heatsink
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
Ordering Information Table
Device Code
ST 18
3
C
08
C
H
K
1
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- C = Ceramic Puk
- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
- C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
- Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100 200 400
- t code
q
10
12
15
18
20
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
EN
EM
EL
EP
EK
FN* HN
FM HM
FL* HL
FP
FK
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
t (µs)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
HP
HK
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt:
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
L
4
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25° 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
1 3 0
1 2 0
1 1 0
1 0 0
90
ST183C..C Series
(Single Side Cooled)
S T 183C ..C Se rie s
(S in g le Sid e C oo le d )
R
(D C ) = 0.17 K /W
R
(DC) = 0.17 K/W
th J- hs
thJ-h s
C ond uction Angle
80
C on duction Period
70
80
60
70
30°
50
30°
60 °
60
60°
40
90 °
180°
90°
50
120°
1 20°
30
1 80°
D C
40
20
0
40
80
120
160
200
240
0
5 0
10 0 15 0 20 0 2 50 30 0 35 0 4 00
Average On-state Current (A)
A ve ra g e O n -sta te C u rre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST183C..C Series
Bulletin I25178 rev. B 04/00
1 3 0
1 3 0
1 2 0
1 1 0
1 0 0
9 0
ST 18 3C ..C S eries
(D ou b le Sid e C o oled )
S T 183C ..C Se ries
(D o u b le S id e C o oled )
1 2 0
1 1 0
1 0 0
90
R
(D C )
=
0.0 8 K /W
R
(D C ) = 0 .08 K /W
thJ-hs
th J-hs
C onduction Angle
Con duction Period
8 0
80
7 0
30 °
70
30°
60°
6 0
60°
60
90 °
5 0
90 °
120 °
50
4 0
120°
180°
40
3 0
180 °
D C
30
2 0
0
0
1
50 1 0 0 1 50 2 0 0 2 50 30 0 3 50 4 0 0 45 0
0
10 0
2 00
3 0 0
4 00
5 00
60 0
70 0
Ave ra g e O n -sta te C u rren t (A )
A ve ra g e O n -sta te C u rren t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 0 00
9 00
8 00
7 00
6 00
5 00
4 00
3 00
2 00
1 00
0
1400
1200
1000
800
DC
180°
120°
90°
60°
30°
18 0°
12 0°
9 0°
6 0°
3 0°
R M S L im it
600 RMS Limit
Con du ction Period
C ond uction Angle
S T 183C ..C Se ries
400
200
0
ST183C..C Series
= 125°C
T
J
T
= 1 25°C
J
5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0
A vera g e O n -sta te C u rre n t (A )
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
At Any Rated Load Condition And With
M a x im u m N on R e p etitive S urg e C u rre n t
V e rsu s P ulse T ra in D u ra tion . C o n tro l
O f C on d u ctio n M a y No t B e M a in ta in ed .
Rated V
Applied Following Surge.
RRM
In itial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itia l T
=
125° C
No V olta g e Re a p p lied
Ra te d R ea p p lied
J
V
RRM
ST 1 83C ..C S erie s
ST183C..C Series
10
100
0.01
0.1
1
Numb er O f Equa l Amplitud e H alf C ycle C urrent Pulses (N)
P u lse T ra in D u ra tion (s)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
6
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ST183C..C Series
Bulletin I25178 rev. B 04/00
10000
1000
100
1
ST 183C ..C Se rie s
ST183C..C Series
0.1
S tea d y S ta te V a lue
0.17 K /W
(S in gle S id e C o oled )
0.08 K /W
R
=
th J-hs
T
T
= 25°C
J
J
0 .01
0 .0 01
= 125°C
R
=
th J-hs
(D ou b le Sid e C o ole d )
(D C O p era tio n )
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
0 .0 01
0 .0 1
0 .1
1
1 0
Sq u a r e W a v e Pu lse D u ra tio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
160
250
200
150
100
50
I
=
500 A
I
= 500 A
300 A
200 A
100 A
ST183C..C Series
= 125 °C
TM
TM
140
120
100
80
T
J
300 A
200 A
100 A
50 A
60
50 A
40
ST183C..C Series
= 125 °C
20
T
J
0
0
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of Forw ard Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
Snub ber circu it
Snub ber circuit
R
=
47 ohms
R
C
V
s
= 47 oh ms
0.22 µF
s
C
V
= 0.22 µ F
s
=
s
D
= 80% V
100
D
= 80%
V
DRM
DRM
50 Hz
200
400
50 Hz
100
200
500
400
1000
500
1000
1500
1500
2500
2500
3000
5000
3000
5000
ST183C..C Series
Sinusoidal pulse
ST183C..C Series
Sinusoida l p ulse
tp
T
= 55°C
C
T
= 40°C
t p
C
10000
10000
1E4 1 E11E1
1E4
1 E2
1 E3
1E4
1E1
1E2
1E3
P u lse B a sew id th (µ s)
P u lse B ase w id th (µ s)
Fig. 13 - Frequency Characteristics
7
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ST183C..C Series
Bulletin I25178 rev. B 04/00
1E4
Snub ber circuit
Snu bber circuit
R
C
V
= 47 ohms
= 0.22 µF
R
C
V
= 47 ohms
= 0.22 µF
= 80% V
DRM
s
s
s
s
D
D
= 80%
V
DRM
50 H z
100
50 H z
1E3
200
100
200
400
400
500
500
tp
1000
1000
1500
2500
1500
2500
1E2
ST183C ..C Series
Tra pezoidal pulse
ST183C..C Series
Trapezoidal pulse
3000
3000
T
=
40°C
C
T
= 55°C
C
tp
5000
di/d t = 50A/µs
di/dt = 50A/µs
5000
1E2
1 E1
1 E2
1 E3
11E1
1E4
1 E3
1E4
P u lse Ba sew id th (µs)
P u lse B a sew id th (µs)
Fig. 14 - Frequency Characteristics
1E 4
1E 3
1E 2
1E 1
Snub ber circuit
Snub ber circuit
R
= 47 ohms
s
R
= 47 ohms
s
C
V
= 0.22 µF
s
C
V
= 0.22 µF
s
= 80% V
D
DRM
= 80%
V
DR M
D
50 Hz
100
50 Hz
200
400
100
200
400
500
1000
500
1000
1500
1500
2500
2500
3000
3000
5000
10000
5000
ST183C..C Series
Trapezoida l pulse
ST183C ..C Series
Trapezoidal pulse
10000
T
= 55°C
T
= 40°C
C
C
tp
tp
di/dt = 100A/µs
d i/dt = 100A/µs
1E 1
1 E2
1E3
1E141 E11E1
1 E2
1 E3
1 E4
P u lse B ase w id th (µ s)
Pu lse B asew id th (µs)
Fig. 15 - Frequency Characteristics
1E5
ST183C..C Series
Rectan gular pulse
di/dt = 50A/µs
tp
1E4
1E3
1E2
1E1
20 joules per pulse
10
4
20 joules per pulse
10
2
4
1
0.5
2
0.3
1
0.2
0.5
0.3
0.1
0.2
0.1
ST183C ..C Series
Sinusoidal pulse
tp
1E1
1E14E4 1E1
1E 1
1E 2
1 E3
1E2
1E3
1 E4
Pu lse B ase w id th (µ s)
P ulse Ba sew id th (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST183C..C Series
Bulletin I25178 rev. B 04/00
1 00
1 0
1
Re c ta n g ula r ga te p ulse
(1) PG M
(2) PG M
(3) PG M
(4) PG M
=
=
=
=
10 W , tp
20 W , tp
40 W , tp
60 W , tp
=
=
=
=
20m s
10m s
5m s
a ) R ec om m en d e d loa d lin e f or
rate d d i/d t : 20V , 10 oh m s; tr <= 1 µs
b ) R eco m m en d ed lo a d lin e fo r
< = 30% ra ted di/dt : 10V , 10oh m s
tr< = 1 µ s
3.3m s
(a )
(b )
(2)
(1)
(3) (4)
V G D
IG D
D evice : ST 183C ..C S eries F re q u en c y Lim ite d b y PG (A V )
0.1 1 0 1 00
0.1
0.0 01
0.0 1
1
In sta n ta n eou s G a te C u rren t (A)
Fig. 17 - Gate Characteristics
9
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