ST230S [INFINEON]

PHASE CONTROL THYRISTORS Stud Version; 相位控制晶闸管梭哈版本
ST230S
型号: ST230S
厂家: Infineon    Infineon
描述:

PHASE CONTROL THYRISTORS Stud Version
相位控制晶闸管梭哈版本

文件: 总10页 (文件大小:259K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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DISCRETE POWER DIODES and THYRISTORS  
DATA BOOK  
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Index  
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3/B  
ST230S SERIES  
PHASE CONTROL THYRISTORS  
Stud Version  
Features  
230A  
Center amplifying gate  
Hermetic metal case with ceramic insulator  
(Also available with glass-metal seal up to 1200V)  
International standard case TO-209AB (TO-93)  
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5  
Compression Bonded Encapsulation for heavy duty  
operations such as severe thermal cycling  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST230S  
Units  
230  
85  
A
°C  
@ TC  
IT(RMS)  
ITSM  
360  
5700  
5970  
163  
149  
A
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
A
A
I2t  
KA2s  
KA2s  
V
DRM/VRRM  
400 to 1600  
100  
V
case style  
t
typical  
µs  
q
TO-209AB (TO-93)  
TJ  
- 40 to 125  
°C  
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ST
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
Type number Code  
peak and off-state voltage  
V
repetitive peak voltage  
V
@ TJ = TJ max  
mA  
04  
08  
400  
800  
500  
900  
ST230S  
12  
14  
16  
1200  
1400  
1600  
1300  
1500  
1700  
30  
On-state Conduction  
Parameter  
ST230S  
Units Conditions  
IT(AV) Max. average on-state current  
@ Case temperature  
230  
85  
A
180° conduction, half sine wave  
°C  
12  
IT(RMS) Max. RMS on-state current  
360  
5700  
5970  
4800  
5000  
163  
A
DC @ 78°C case temperature  
ITSM  
Max. peak, one-cycle  
t = 10ms  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
No voltage  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
148  
KA2s  
115  
105  
I2t  
Maximum I2t for fusing  
1630  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO)1 Low level value of threshold  
0.92  
0.98  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO)2 High level value of threshold  
voltage  
(I > π x IT(AV)),TJ = TJ max.  
r
Low level value of on-state  
slope resistance  
1
t
0.88  
0.81  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
r
High level value of on-state  
slope resistance  
2
t
(I > π x IT(AV)),TJ = TJ max.  
2222222222222  
VTM  
IH  
Max. on-state voltage  
1.55  
600  
V
I = 720A, TJ = TJ max, t = 10ms sine pulse  
pk p  
Maximum holding current  
Max. (typical) latching current  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
1000 (300)  
Switching  
Parameter  
ST230S  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
TJ = TJ max, anode voltage 80% VDRM  
r
1000  
1.0  
A/µs  
µs  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
d
V = 0.67% VDRM, TJ = 25°C  
d
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V  
t
Typical turn-off time  
100  
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
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ries  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
Fig. 3 - On-state Power Loss Characteristics  
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Fig. 4 - On-state Power Loss Characteristics  
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ST2
Index  
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Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 7 - On-state Voltage Drop Characteristics  
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Fig. 8 - Thermal Impedance ZthJC Characteristic  
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ries  
Fig. 9 - Gate Characteristics  
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ST230S Series  
Blocking  
Parameter  
ST230S  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max. linear to 80% rated VDRM  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
30  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
ST230S  
Units Conditions  
PGM  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
Maximum peak gate power  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
MAX.  
-
23  
IGT  
DC gate current required  
to trigger  
TJ = - 40°C  
TJ = 25°C  
180  
90  
mA  
V
150  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
TJ = 125°C  
TJ = - 40°C  
TJ = 25°C  
TJ = 125°C  
40  
-
-
VGT  
DC gate voltage required  
to trigger  
2.9  
1.8  
1.2  
3.0  
-
Max. gate current/ voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
mA  
V
TJ = TJ max  
VGD  
0.25  
Thermal and Mechanical Specification  
Parameter  
ST230S  
Units Conditions  
°C  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 125  
-40 to 150  
stg  
RthJC Max. thermal resistance,  
0.10  
DC operation  
K/W  
junction to case  
RthCS Max. thermal resistance,  
0.04  
Mounting surface, smooth, flat and greased  
case to heatsink  
T
Mounting torque, ± 10%  
31  
Non lubricated threads  
Lubricated threads  
(275)  
24.5  
(210)  
280  
Nm  
(lbf-in)  
wt  
Approximate weight  
Case style  
g
TO - 209AB (TO-93)  
See Outline Table  
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ST
RthJC Conduction  
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)  
Conduction angle Sinusoidal conduction Rectangular conduction Units  
Conditions  
TJ = TJ max.  
180°  
120°  
90°  
0.016  
0.019  
0.025  
0.036  
0.060  
0.012  
0.020  
0.027  
0.037  
0.060  
K/W  
60°  
30°  
Ordering Information Table  
12  
Device Code  
ST 23  
0
S
16  
P
0
7
8
9
1
2
5
3
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
S = Compression bonding Stud  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
P = Stud base 16UNF threads  
M = Stud base metric threads (M16 x 1.5)  
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)  
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)  
2 = Flag terminals (For Cathode and Gate Terminals)  
V = Glass-metal seal (only up to 1200V)  
8
9
-
-
2222222222222  
None = Ceramic housing (over 1200V)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
L
= 1000V/µsec (Special selection)  
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ies  
Outline Table  
GLASS METAL SEAL  
19 (0.75) MAX.  
8.5 (0.33) DIA.  
4 (0.16) MAX.  
4.3 (0.17) DIA.  
FLEXIBLE LEAD  
2
C.S. 25mm  
(0.039 s.i.)  
RED SILICON RUBBER  
RED CATHODE  
Fast-on Terminals  
2
C.S. 0.4mm  
(0.0006 s.i.)  
AMP. 280000-1  
REF-250  
WHITE GATE  
+I  
+
220 (8.66) 10 (0.39)  
-
RED SHRINK  
WHITE SHRINK  
28.5 (1.12) MAX. DIA.  
SW 32  
3/4"-16UNF-2A *  
23  
35 (1.38) MAX.  
Case Style TO-209AB (TO-93)  
All dimensions in millimeters (inches)  
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.  
CERAMIC HOUSING  
19 (0.75) MAX.  
4 (0.16) MAX.  
8.5 (0.33) DIA.  
4.3 (0.17) DIA.  
FLEXIBLE LEAD  
2
C.S. 25mm  
(0.039 s.i.)  
RED SILICON RUBBER  
2
C.S. 0.4mm  
RED CATHODE  
(0.0006 s.i.)  
WHITE GATE  
+I  
+
220 (8.66) 10 (0.39)  
-
RED SHRINK  
WHITE SHRINK  
27.5 (1.08) MAX. DIA.  
SW 32  
3/4"-16UNF-2A *  
35 (1.38) MAX.  
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.  
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ST230Sees  
Index  
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Outline Table  
GLASS-METAL SEAL  
FLAG TERMINALS  
22 (0.89)  
14 (0.55)  
DIA. 6.5 (0.25)  
1.5 (0.06) DIA.  
DIA. 28.5 (1.12) MAX.  
SW 32  
12  
3/4"-16UNF-2A*  
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.  
Case Style TO-209AB (TO-93) Flag  
All dimensions in millimeters (inches)  
3 (0.12)  
CERAMIC HOUSING  
FLAG TERMINALS  
22 (0.89)  
14 (0.55)  
DIA. 6.5 (0.25)  
1.5 (0.06) DIA.  
DIA. 27.5 (1.08) MAX.  
2222222222222  
SW 32  
3/4"-16UNF-2A*  
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.  
3 (0.12)  
To Order  

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