ST2600C20R1PBF [INFINEON]
Silicon Controlled Rectifier, 4800A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, RPUK-2;型号: | ST2600C20R1PBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 4800A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, RPUK-2 栅 栅极 |
文件: | 总6页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25199 rev. B 02/00
ST2600C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2630A
Double side cooling
High surge capability
High mean current
Fatigue free
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST2600C..R
Units
2220
80
A
°C
A
@ TC
IT(AV)
2630
55
@ T
°C
A
hs
IT(RMS)
4800
@ T
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
46000
48200
A
I2t
@ 50Hz
@ 60Hz
10580
KA2s
9640
2000 to 3000
400
KA2s
V
VDRM/VRRM
t
typical
max.
µs
q
TJ
125
°C
1
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
ST2600C..R
peak and off-state voltage
V
repetitive peak voltage
V
@ T = 125°C
CmA
20
22
24
26
28
30
2000
2200
2400
2600
2800
3000
2100
2300
2500
2700
2900
3100
250
On-state Conduction
Parameter
ST2600C..R
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
2220 (1440)
80
A
°C
180° conduction, half sine wave
IT(AV) Max. average on-state current
@ Heatsink temperature
2630 (1160)
55 (85)
A
°C
A
double side (single side [anode side]) cooled
IT(RMS) Max. RMS on-state current
4800
DC @ 25°C heatsink temperature double side cooled
46000
48200
36800
38500
10580
9640
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
TJ = TJ max.
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
I2t
Maximum I2t for fusing
Initial TC = 125°C
KA2s
6770
6150
VT(TO) Max. value of threshold voltage
0.89
V
rt
Max. value of on-state slope
resistance
mΩ
0.19
TJ = TJ max.
VTM
IL
Max. on-state voltage
1.45
V
I = 2900A, TC = 25°C
pk
Max. (typical) latching current
300 (100)
mA
TJ = 25°C, VD = 5V
Switching
Parameter
ST2600C..R
150 (300)
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM gate drive 20V, 20Ω, t = 1µs
r
A/µs
TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
2.0
d
Rise time 0.5µs
µs
IT = 800A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
400
q
dIRR/dt = 20A/µs, VDR =67% VDRM, dV/dt = 20V/µs linear
2
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
Blocking
Parameter
ST2600C..R
500
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST2600C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode negative with respect to cathode
VGM
-VGM
IGT
30
0.25
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
TC = 25°C, VDRM = 5V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
Thermal and Mechanical Specification
Parameter
ST2600C..R
Units Conditions
On-state (conducting)
TJ max. Max. operating temperature
125
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C Thermal resistance, junction
to case
0.019
DC operation single side cooled
DC operation double side cooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
to heatsink
0.004
0.002
Singlesidecooled
Double side cooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
K/W
Conditions
TJ = TJ max.
180°
120°
60°
0.0017
0.0017
0.0044
0.0044
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3
ST2600C..R Series
Bulletin I25199 rev. B 02/00
Ordering Information Table
Device Code
ST 260
0
C
30
R
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° 5°
)
4
2
.
0
(
3
.
6
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
4
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
130
120
110
100
90
130
120
110
100
90
ST2600C..R Series
ST2600C..R Series
(Single Side Cooled)
(Double Side Cooled)
R
(DC) = 0.0115 K/W
R
(DC) = 0.023 K/W
thJ-hs
thJ-hs
80
80
Conduction Angle
Conduction Angle
70
70
60˚
60
60
60˚
120˚
50
50
180˚
120˚
40
40
180˚
30
30
DC
DC
20
20
0
1000
2000
3000
4000
0
1000 2000 3000 4000 5000
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10000
1000
100
DC
180˚
120˚
60˚
T = 125˚C
RMS Limit
J
Conduction Angle
ST2600C..R Series
ST2600C..R Series
T
= 125˚C
J
0
1000 2000 3000 4000 5000
0.5
1
1.5
2
2.5
3
Average On-state Current (A)
Average On-state Current (A)
Fig. 4- On-state Power Loss Characteristics
Fig. 3- On-state Power Loss Characteristics
75000
70000
65000
60000
55000
50000
45000
40000
35000
30000
45000
40000
35000
30000
25000
20000
15000
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
50% Rated V
Applied Following Surge
RRM
Initial T = 125˚C
J
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
50% Rated V
Reapplied
RRM
ST2600C..R Series
ST2600C..R Series
1
10
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
10000
T
= 125˚C
J
I
T
d
I
T
d
t
Q
Q
max.
min.
rr
rr
t
= s
3m
t
p
Q
rr
(RC)
I
E
RM
ST2600C..R Series
1000
1
10
100
Rate Of Decay Of On-state Current - di/dt (A/µs)
Fig. 7 - Stored Charged
0.1
0.01
ST2600C..R Series
Steady State Value
= 0.019 K/W
R
thJ-C
(Single Side Cooled)
= 0.0095 K/W
0.001
0.0001
R
thJ-C
(Double Side Cooled)
(DC Operation)
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
100
10
1
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
(6)
(3)
(5)
(2)
(4)
(1)
VGD
IGD
Device: ST2600C..R Series
Frequency Limited by PG(AV)
1
0.1
0.001
0.01
0.1
10
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
6
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