ST280C06C0 [INFINEON]
Silicon Controlled Rectifier, 960A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, EPUK-2;
| 型号： | ST280C06C0 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 960A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, EPUK-2 栅 栅极 |
| 文件： | 总8页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-294
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Bulletin I25159/B
ST280C..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
500A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST280C..C
Units
500
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
960
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7850
8220
308
281
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 600
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
D-295
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ST280C..C Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
ST280C..C
Code
peak and off-state voltage
repetitive peak voltage
V
V
04
06
400
600
500
700
30
On-state Conduction
Parameter
ST280C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
500 (185)
55 (85)
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
960
7850
8220
6600
6900
308
DC @ 25°C heatsink temperature double side cooled
12
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
281
KA2s
218
200
I2√t
Maximum I2√t for fusing
3080
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.84
0.88
0.50
0.47
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
2222222222222
I = 1050A, TJ = 125°C, t = 10ms sine pulse
pk
VTM
IH
Max. on-state voltage
1.36
600
V
p
Maximum holding current
Max. (typical) latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000 (300)
Switching
Parameter
ST280C..C
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
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ST280C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
D-300
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ST280C..C Series
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Gate Characteristics
D-301
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ST280C..C Series
Blocking
Parameter
ST280C..C
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
500
30
IDRM
IRRM
Max. peak reverse and off-state
leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST280C..C
Units Conditions
PGM
10.0
2.0
T = TJ max, t ≤ 5ms
J
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
23
TYP.
180
MAX.
-
T
J = - 40°C
IGT
DC gate current required
to trigger
90
40
150
mA
V
TJ 25°C
=
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
T
J = 125°C
J = - 40°C
2.9
1.8
1.2
T
VGT
DC gate voltage required
to trigger
3.0
-
TJ
= 25°C
TJ = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.30
V
DRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST280C..C
-40 to 125
Units Conditions
°C
TJ
T
Max. operatingtemperaturerange
Max. storage temperature range
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junctiontoheatsink
0.17
0.08
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
R
thC-hs Max. thermal resistance,
casetoheatsink
0.033
0.017
4900
(500)
50
DCoperationsinglesidecooled
DCoperationdoublesidecooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
SeeOutlineTable
D-2973333
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ST280C..C Series
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.016
0.019
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
12
Ordering Information Table
Device Code
ST 28
0
C
06
C
1
7
1
8
2
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
C = Puk Case TO-200AB (A-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
2222222222222
8
-
L
= 1000V/µsec (Special selection)
D-298
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ST280C..C Series
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
23
25°± 5°
42 (1.65) MAX.
28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
D-2993333
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