ST280CH04C0PBF [INFINEON]
Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2;型号: | ST280CH04C0PBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2 栅 栅极 |
文件: | 总7页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25160 rev. C 02/00
ST280CH..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
500A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Extended temperature range
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST280CH..C
Units
500
80
A
°C
@ T
hs
IT(RMS)
1130
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7200
7500
260
230
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 600
100
V
t
typical
µs
q
TJ
- 40 to 150
°C
1
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ST280CH..C Series
Bulletin I25160 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
repetitive peak voltage
V
V
04
400
600
500
700
ST280CH..C
06
75
On-state Conduction
Parameter
ST280CH..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
500 (185)
80 (110)
1130
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
7200
7500
6000
6300
260
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
235
KA2s
180
165
I2√t
Maximum I2√t for fusing
2600
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.84
0.88
0.50
0.47
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
slope resistance
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.35
600
V
I = 1000A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
mA
TJ = 25°C, anode supply 12V resistive load
IL
Max (typical) latching current
1000 (300)
Switching
Parameter
ST280CH..C
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
I
TM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST280CH..C Series
Bulletin I25160 rev. C 02/00
Blocking
Parameter
ST280CH..C
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
mA TJ = TJ max, rated VDRM/VRRM applied
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
75
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST280CH..C
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
180
MAX.
-
TJ = - 40°C
IGT
DC gate current required
to trigger
90
30
150
mA TJ = 25°C
TJ = 150°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.9
1.8
1.0
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
TJ = 150°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
0.30
mA
V
TJ = TJ max
VGD
Thermal and Mechanical Specification
Parameter
ST280CH..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 150
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
DC operation double side cooled
K/W
K/W
RthC-hs Max. thermal resistance,
case to heatsink
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
3
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ST280CH..C Series
Bulletin I25160 rev. C 02/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
J = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.016
0.019
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
T
K/W
60°
30°
Ordering Information Table
Device Code
ST 28
0
CH 06
C
1
7
8
1
2
3
5
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
CH = Ceramic Puk, High temperature
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
C = Puk Case TO-200AB (A-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST280CH..C Series
Bulletin I25160 rev. C 02/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
25° 5°
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
150
140
130
120
110
100
150
140
130
120
110
100
90
ST280CH..C Series
(Single Side Cooled)
ST280CH..C Series
(Single Side Cooled)
R
(DC) = 0.17 K/W
R
(DC) = 0.17 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
70
60
50
40
30
20
0
30˚
90
80
70
60
50
40
60˚
30˚
90˚
60˚
120˚
90˚
120˚
180˚
DC
180˚
0
100
200
300
400
500
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST280C..H Series
Bulletin I25160 rev. C 02/00
150
150
140
130
120
110
100
90
ST280CH..C Series
(Double Side Cooled)
ST280CH..C Series
(Double Side Cooled)
140
130
120
110
100
90
R
(DC) = 0.08 K/W
R
(DC) = 0.08 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
70
80
70
30˚
30˚
60˚
60˚
90˚
60
60
90˚
120˚
120˚
50
40
50
40
180˚
180˚
30
30
DC
20
20
0
100 200 300 400 500 600 700 800
0
200 400 600 800 1000 1200
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
1800
1600
1400
1200
1000
800
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
600
Conduction Period
Conduction Angle
400
ST280CH..C Series
ST280CH..C Series
T
= 150˚C
T
= 150˚C
200
J
J
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 150˚C
J
Initial T = 150˚C
J
@ 60 Hz 0.0083 s
No Voltage Reapplied
@ 50 Hz 0.0100 s
Rated V
Reapplied
RRM
ST280CH..C Series
ST280CH..C Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST280C..H Series
Bulletin I25160 rev. C 02/00
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
7
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