ST303C04LCM0LP [INFINEON]
Silicon Controlled Rectifier, 515000mA I(T), 400V V(DRM);型号: | ST303C04LCM0LP |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 515000mA I(T), 400V V(DRM) |
文件: | 总9页 (文件大小:265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25237 10/06
ST303CLPbF SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
515A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST303C..L
Units
515
55
A
°C
@ T
hs
IT(RMS)
995
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7950
8320
316
289
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 1200
10 to 30
V
t range (*)
µs
q
TJ
- 40 to 125
°C
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
q
1
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ST303CLPbF Series
Bulletin I25237 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
DRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST303C..L
repetitivepeakvoltage
non-repetitivepeakvoltage
V
V
04
08
10
12
400
500
800
900
50
1000
1200
1100
1300
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
1800
1850
1560
690
50
180oel
100μs
5660
2830
1490
540
50
50Hz
400Hz
1130
1010
950
820
1540
1570
4990
2420
A
V
1000Hz
680
230
50
530
140
50
1300
510
50
1220
390
50
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/μs
40
55
40
55
°C
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-stateConduction
Parameter
ST303C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
515 (190)
55 (85)
995
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side
cooled
ITSM
Max. peak, one half cycle,
non-repetitive surge current
7950
8320
6690
7000
316
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
A
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
289
224
204
I2√t
Maximum I2√t for fusing
3160
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST303CLPbF Series
Bulletin I25237 10/06
On-stateConduction
Parameter
ST303C..L Units Conditions
VTM
Max. peak on-state voltage
2.16
1.44
ITM= 1255A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.48
0.57
0.56
(I > π x IT(AV)), TJ = TJ max.
r 1
t
Low level value of forward
slope resistance
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical atching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST303C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.83
d
Resistive load Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
µs
Min Max
t
Max. turn-off time (*)
q
10
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
q
q
Blocking
Parameter
ST303C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
50
V/μs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST303C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST303CLPbF Series
Bulletin I25237 10/06
ThermalandMechanicalSpecification
Parameter
ST303C..L
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.05
DC operation single side cooled
K/W
K/W
DC operation double side cooled
R
thC-hsMax. thermal resistance,
case to heatsink
0.011
0.005
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
ΔRthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidalconduction Rectangularconduction
Conductionangle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
OrderingInformationTable
Device Code
ST 30
3
C
12
L
H
K
1
P
2
1
3
7
4
6
5
8
9
10
11
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK)
dv/dt - tq combinations available
dv/dt(V/µs) 20 50 100 200 400
CN DN EN FN * HN
7 - Reapplied dv/dt code (for t test condition)
q
t (µs)
q
10
12
15
20
8 - t code
q
CM DM EM FM HM
CL DL EL FL * HL
CK DK EK FK * HK
up to 800V
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
t (µs)
q
15
18
20
25
30
CL
CP DP
CK DK EK FK * HK
CJ
--
--
--
--
--
--
--
--
only for
1000/1200V
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Criticaldv/dt:
DJ
EJ FJ * HJ
DH EH FH HH
10
None = 500V/µsec(Standardvalue)
= 1000V/µsec (Special selection)
11 - P = Lead Free
*Standard part number.
All other types available only on request.
L
4
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ST303CLPbF Series
Bulletin I25237 10/06
OutlineTable
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
CaseStyleTO-200AC(B-PUK)
36.5 (1.44)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
120
110
100
90
130
120
110
100
90
ST303C..LSeries
(Single Side Cooled)
ST303C..L Series
(Single Side Cooled)
R (DC) = 0.11 K/W
thJ-hs
R
(DC) = 0.11 K/W
thJ-hs
80
Conduction Period
Conduction Angle
70
80
30°
60
60°
70
90°
30°
50
120°
180°
60°
60
40
90°
120°
50
30
180°
DC
20
0
40
0
50 100 150 200 250 300 350
Average On-state Current (A)
100 200 300 400 500 600
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
ST303CLPbF Series
Bulletin I25237 10/06
130
130
120
110
100
90
ST303C..L Series
(Double Side Cooled)
ST303C..LSeries
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.05 K/W
R
(DC) = 0.05 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
80
70
30°
70
60
60°
90°
60
30°
50
60°
120°
180°
90°
50
40
120°
180°
40
30
DC
30
20
0
0
1
100 200 300 400 500 600 700
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
1000
800
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RM S Lim it
RM S Lim it
Conduction Period
Conduction Angle
ST303C..L Series
600
600
400
ST303C..LSeries
T = 125°C
J
400
200
T = 125°C
J
200
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteris-
tics
Fig. 6 - On-state Power Loss Characteris-
tics
7000
6500
6000
5500
5000
4500
4000
3500
3000
8000
7500
7000
6500
6000
5500
5000
4500
4000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST303C..L Series
3500 ST303C . . L Se rie s
3000
0.01
0.1
Pulse Train Duration (s)
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
6
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ST303CLPbF Series
Bulletin I25237 10/06
10000
1000
100
1
0.1
Steady State Value
= 0.11 K/W
R
thJ-hs
(Single Side Cooled)
= 0.05 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
T = 25°C
J
T = 125°C
J
0.01
ST303C..LSeries
ST303C .. L Se r ie s
0.001
0
1
2
3
4
5
6
7
8
0.001
0.01
0.1
1
10
Sq u a re Wa v e Pu lse D u r a t io n ( s)
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteris-
tics
180
320
300
280
260
240
220
200
180
160
140
120
100
80
I
= 1000 A
500 A
170
160
150
140
130
120
110
100
90
80
70
60
50
I
= 1000 A
500 A
TM
TM
300 A
300 A
200 A
200 A
100 A
100 A
ST3 03C . . L Se rie s
ST303C..L Series
T = 125 °C
T = 125 °C
J
J
40
30
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
100
50 Hz
200
400
100
50 Hz
500
200
400
1000
500
1000
1500
1500
Snubber circuit
R = 10 o hm s
Snubber circuit
s
2000
R
C
V
= 10 o hm s
= 0.47 µF
= 80%V
2000
2500
3000
C
V
= 0.47 µF
= 80%V
s
s
s
DRM
D
2500
3000
DRM
D
ST30 3 C . . L Se r ie s
Sin u so id a l p u lse
T = 40 ° C
ST3 0 3C . . L Se rie s
Sinusoidal pulse
T = 55°C
tp
C
tp
C
1E1
1
1E2
1E3
1E4
1E1
1E2
1E3
4
1E4
Pulse Ba se w id t h (µs)
Pulse Ba sew id t h (µs)
Fig. 13 - Frequency Characteristics
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7
ST303CLPbF Series
Bulletin I25237 10/06
1E4
Snubber circuit
Snubber circuit
R
C
V
= 10 o h m s
= 0.47 µF
= 80%V
R = 10 ohms
s
s
C
= 0.47 µF
= 80%V
s
s
V
D
DRM
DRM
50 Hz
D
100
200
400
50 Hz
100
200
400
500
1E3
1E2
1E1
500
1000
1000
1500
1500
2000
2500
2000
2500
3000
ST303C..LSeries
Trapezoidal pulse
ST303C..LSeries
Trapezoidal pulse
3000
T = 40°C
T = 55°C
C
C
tp
tp
di/dt = 50A/µs
di/dt = 50A/µs
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba sew id t h (µs)
Fig. 14 - Frequency Characteristics
Snubber circuit
1E4
1E3
1E2
1E1
Snubber circ uit
R = 10 ohms
R = 10 o h m s
s
s
C
= 0.47 µF
C
V
= 0.47 µF
= 80%V
s
s
V
= 80%V
DRM
D
DRM
D
50 Hz
100
50 Hz
200
100
200
400
500
400
500
1000
1000
1500
1500
2000
2000
2500
3000
2500
3000
ST303C..LSeries
Trapezoidal pulse
ST303C..LSeries
Trapezoidal pulse
T = 55 ° C
T = 40°C
C
C
tp
tp
di/dt = 100A/µs
di/dt = 100A/µs
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba sew id t h ( µs)
Pulse Ba se w id t h (µs)
Fig. 15 - Frequency Characteristics
1E5
ST303C..LSeries
Rectangular pulse
di/dt = 50A/µs
tp
1E4
1E3
1E2
1E1
20 joulesper pulse
20 joulesper pulse
10
10
5
3
2
5
1
3
2
0.5
0.4
1
0.5
0.4
ST303C..LSeries
Sinusoidal pulse
tp
1E1
1E2
Pulse Ba sew id t h ( µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E3
1
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h ( µs)
8
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ST303CLPbF Series
Bulletin I25237 10/06
100
10
1
Rectangulargate pulse
(1) PGM=10W, tp =20ms
a)Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1µs
b)Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1µs
(2) PGM=20W, tp =10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(3) (4)
(1)
VGD
IGD
Device: ST303C..LSeries FrequencyLimited byPG(AV)
0.1
0.001
0.01
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
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9
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