ST330C04L2 [INFINEON]
Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4;型号: | ST330C04L2 |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4 |
文件: | 总8页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25154 rev. D 04/03
ST330C..L SERIES
Hockey Puk Version
PHASE CONTROL THYRISTORS
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
High profile hockey-puk
650A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST330C..L
650
Units
A
@ T
55
°C
hs
IT(RMS)
1230
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
9000
9420
405
A
A
I2t
KA2s
KA2s
370
VDRM/VRRM
400 to 2000
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
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1
ST330C..L Series
Bulletin I25154 rev. D 04/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
repetitive peak voltage
V
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
V
04
08
400
800
500
900
ST2330C..L
12
14
16
18
20
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
50
On-state Conduction
Parameter
ST330C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
650 (314)
55 (75)
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
1230
9000
9420
7570
7920
405
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
370
KA2s
287
262
I2√t
Maximum I2√t for fusing
4050
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.91
0.93
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
0.57
0.57
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.90
600
V
I = 1730A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST330C..L
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST330C..L Series
Bulletin I25154 rev. D 04/03
Blocking
Parameter
ST330C..L
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST330C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
200
-
TJ = - 40°C
TJ = 25°C
IGT
DC gate current required
to trigger
mA
V
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
2.5
1.8
1.1
-
VGT
DC gate voltage required
to trigger
3.0
-
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST330C..L
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max.storagetemperaturerange
-40 to 125
-40 to 150
stg
RthJ-hs Max.thermalresistance,
junctiontoheatsink
0.11
0.06
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
RthC-hs Max.thermalresistance,
casetoheatsink
0.011
0.005
9800
(1000)
250
DCoperationsinglesidecooled
DCoperationdoublesidecooled
F
Mountingforce,±10%
N
(Kg)
g
wt
Approximateweight
Casestyle
TO-200AC(B-PUK)
SeeOutlineTable
3
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ST330C..L Series
Bulletin I25154 rev. D 04/03
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
Ordering Information Table
Device Code
ST 33
0
C
16
L
1
7
8
1
2
5
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST330C..L Series
Bulletin I25154 rev. D 04/03
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
120
110
100
90
130
120
110
100
90
ST330C..L Series
(Single Side Cooled)
ST330C..LSeries
(Single Side Cooled)
R
(DC) = 0.11 K/W
R
(DC) = 0.11 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
80
70
70
30°
60
60°
60
90°
50
30°
120°
60°
50
180°
40
90°
120°
40
30
180°
DC
600
30
20
0
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
200
400
800
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
5
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ST330C..L Series
Bulletin I25154 rev. D 04/03
130
130
120
110
100
90
ST330C..LSeries
(Double Side Cooled)
ST330C..L Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.05 K/W
R
(DC) = 0.05 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
80
70
70
30°
60
60
60°
30°
60°
50
50
90°
90°
120°
180°
120°
40
40
180°
30
30
DC
20
20
0
200
400
600
800
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
2200
2000
1800
1600
1400
1200
1000
800
1600
1400
1200
1000
800
600
400
200
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RM S Lim it
RMS Lim it
Conduction Period
ST330C..LSeries
Conduction Angle
ST330C..LSeries
600
400
T = 125°C
J
T = 125°C
J
200
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST330C..L Series
ST330C..LSeries
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST330C..L Series
Bulletin I25154 rev. D 04/03
10000
1000
100
Tj = 125˚C
Tj = 25˚C
ST330C..L Series
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.11 K/W
R
thJ-hs
(Single Side Cooled)
= 0.05 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST330C..L Series
1
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST330C..L Series
0.1
0.1
0.001
0.01
1
10
100
Inst a nt a ne o us Ga t e Curre nt (A)
Fig. 11 - Gate Characteristics
7
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ST330C..L Series
Bulletin I25154 rev. D 04/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04 /03
8
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