ST333C08LFM1L [INFINEON]
Silicon Controlled Rectifier, 1230A I(T)RMS, 620000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC;
| 型号： | ST333C08LFM1L |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1230A I(T)RMS, 620000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC 栅 栅极 |
| 文件： | 总9页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25187 rev. B 04/00
ST333C..L SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
620A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST333C..L
Units
620
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
1230
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
11000
11500
605
A
A
KA2s
KA2s
553
V
DRM/VRRM
400 to 800
10 to 30
V
t range
q
µs
TJ
- 40 to 125
°C
1
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ST333C..L Series
Bulletin I25187 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST333C..L
repetitive peak voltage
V
non-repetitive peak voltage
V
04
08
400
800
500
900
50
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
6310
3440
2040
990
50
180oel
50Hz
400Hz
1430
1670
1250
1170
2340
2310
1940
2010
5620
5030
A
V
1000Hz
1080
530
50
880
400
50
2090
1190
50
1800
990
50
1750
800
50
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
VDRM
50
40
50
55
-
-
-
-
A/µs
°C
Heatsink temperature
40
55
40
55
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
ST333C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
620 (305)
55 (75)
1230
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
11000
11500
9250
9700
605
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
553
KA2s
428
391
I2√t
Maximum I2√t for fusing
6050
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST333C..L Series
Bulletin I25187 rev. B 04/00
On-state Conduction
Parameter
ST333C..L Units Conditions
VTM
Max. peak on-state voltage
1.96
0.91
ITM= 1810A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
0.93
0.58
0.58
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
t
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
t2
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST333C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
Max. turn-off time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
t
q
10
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
Blocking
Parameter
ST333C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
50
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST333C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max., f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST333C..L Series
Bulletin I25187 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST333C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.05
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
0.011
0.005
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
case to heatsink
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
Ordering Information Table
Device Code
ST 33
3
C
08
L
H
K
1
3
4
6
7
1
2
5
8
9
10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100 200 400
8 - t code
q
10
12
15
18
20
25
30
CN
CM
CL
CP
CK
--
DN
DM
DL
DP
DK
--
EN
EM FM *
EL
EP
EK
--
--
--
--
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
FL * HL
t (µs)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
q
FP
FK
FJ
--
HP
HK
HJ
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt:
--
--
--
HH
*Standard part number.
All other types available only on request.
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST333C..L Series
Bulletin I25187 rev. B 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
1 30
1 20
1 10
1 00
9 0
ST 3 33C ..L Se rie s
(Sin g le S id e C o oled )
ST333C..L Series
(Single Side Cooled)
120
110
100
90
R
(D C ) = 0.11 K /W
R
(DC) = 0.11 K/W
th J-hs
thJ-h s
8 0
Con duction An gle
Cond uction P eriod
80
7 0
70
30°
6 0
60°
60
90°
5 0
120°
50
9 0°
180°
400
4 0
60°
120°
40
3 0
30°
1 80°
D C
30
2 0
0
100
200
300
500
0
10 0 20 0 30 0 40 0 5 0 0 6 0 0 7 00 8 00
Average On-state Current (A)
A ve ra g e O n -sta te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST333C..L Series
Bulletin I25187 rev. B 04/00
13 0
1 3 0
1 2 0
1 1 0
1 0 0
90
ST 33 3C ..L S erie s
(D ou b le Sid e C o ole d )
ST 333C ..L Se rie s
(D o ub le S id e C oo le d )
12 0
11 0
10 0
9 0
R
(D C ) = 0 .05 K /W
R
(D C ) = 0.05 K /W
th J-hs
thJ- hs
C ondu ction Period
8 0
80
Cond uction Angle
7 0
70
30°
6 0
60
60°
3 0°
5 0
60°
50
90°
90°
12 0°
1 20°
4 0
40
180 °
1 80°
3 0
30
D C
2 0
20
0
1 00 20 0 3 0 0 4 0 0 5 00 6 0 0 70 0 8 00
Ave ra g e O n -sta te C u rren t (A )
0
2 0 0
4 0 0
6 0 0
8 00 10 0 0 1 20 0 1 4 00
Av era g e O n -sta te C urre n t ( A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2200
2000
1800
1600
1400
1200
1000
800
28 0 0
24 0 0
20 0 0
16 0 0
12 0 0
8 0 0
180°
120°
90°
60°
30°
D C
180°
120°
90°
60°
30°
R M S Lim it
RMS Limit
C onduction Period
ST 333C ..L Se ries
Con duction An gle
ST333C..L Series
600
400
4 0 0
T
= 12 5°C
T
= 125°C
200
J
J
0
0
0
200
400
600
800
1000
0
20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 1 4 00 1 60 0
A ve ra g e O n -sta te C u rren t (A )
Average On-state Current (A)
Fig. 6 - On-state Power Loss Characteristics
Fig. 5 - On-state Power Loss Characteristics
10000
9500
9000
8500
8000
7500
7000
6500
6000
5500
12000
11000
10000
9000
8000
7000
6000
5000
4000
At Any Rated Load Condition And With
M a x im u m N on R ep e titive Su rg e C u rre n t
V e rsu s P ulse T ra in D u ra tion . C o n tro l
O f C on d u ction M a y N ot B e M a in ta in e d .
Rated V
Applied Follow ing Surge.
RRM
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itia l T
=
125° C
N o V olta g e R ea p p lie d
Ra te d R ea p p lied
J
V
RRM
ST 3 33C ..L Se rie s
5000 ST333C..L Series
4500
1
0.01
0.1
1
10
100
Numb er O f Equ al Am plitud e Half Cycle C urrent Pulses (N)
P u lse Tr a in D u ra tio n (s)
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
6
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ST333C..L Series
Bulletin I25187 rev. B 04/00
1
10000
1000
100
Ste a d y Sta te V a lu e
0.1 1 K /W
(Sin g le Sid e C oo le d )
0.0 5 K /W
R
=
thJ-hs
R
=
th J- hs
0 .1
(D o ub le Sid e C oo le d )
(D C O p e ra tion )
T
T
= 25°C
J
J
0.0 1
= 125°C
S T 333C ..L Se rie s
ST333C..L Series
0 .0 01
0
1
2
3
4
5
6
7
0 .00 1
0. 01
0. 1
1
10
S q u a re W a ve P u lse D ur atio n (s)
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 80
320
300
280
260
240
220
200
180
160
140
120
100
80
I
= 1000 A
500 A
300 A
200 A
100 A
TM
I
= 1000 A
500 A
300 A
200 A
100 A
TM
1 60
1 40
1 20
1 00
8 0
S T 333C ..L S eries
125 °C
6 0
T
=
J
ST333C..L Series
= 125 °C
T
4 0
J
2 0
1 0
20
3 0
4 0
5 0
60
7 0
8 0
90 1 00
10 20 30 40 50 60 70 80 90 100
R a te O f F a ll O f Fo rw a rd C u rren t - d i/d t (A /µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
100
50 H z
200
400
200
400
500
100 50 Hz
1000
500
1000
1500
1500
Snubb er circuit
= 10 ohms
= 0.47 µF
Snub ber circu it
2500
R
2500
R
= 10 ohms
s
s
3000
C
V
C
V
= 0.47 µF
= 80%
s
s
3000
5000
= 80% V
DRM
V
DR M
D
D
5000
ST333C ..L Series
Sin usoidal pulse
ST333C ..L Series
Sinusoidal pulse
= 40°C
T
= 55°C
tp
C
T
C
tp
1E4
1E41 E1
1E1
1E1
1E2
1E3
1 E2
1 E3
1E4
P u lse B a sew id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 13 - Frequency Characteristics
7
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ST333C..L Series
Bulletin I25187 rev. B 04/00
1E4
Snub ber circuit
Snub ber circuit
R
C
V
=
10 ohm s
R
C
V
s
=
10 ohms
= 0.47 µF
= 80%
DRM
s
= 0.47 µF
= 80% V
s
s
DRM
D
V
D
50 Hz
100
200
400
50 Hz
500
200 100
400
1000
500
1000
1500
1E3
1500
2000
2500
2000
2500
3000
ST333C ..L Series
Tra pezoida l pu lse
ST333C ..L Series
Trapezoidal pulse
3000
5000
T
=
40°C
T
= 55°C
C
C
5000
tp
tp
d i/dt = 50A/µs
di/dt = 50A/µs
1E2
1E1
1E1
1E141
1 E2
1 E3
1E 2
1E3
1E4
P u lse B ase w id th (µs)
P ulse Ba sew id th (µs)
Fig. 14 - Frequency Characteristics
1E 4
1E 3
1E 2
Snub ber circuit
Snubb er circuit
R
C
V
= 10 oh ms
= 0.47 µ F
s
R
C
= 10 ohm s
= 0.47 µF
s
s
s
= 80% V
DRM
D
V
= 80% V
DRM
D
50 Hz
50 Hz
100
200
100
400
200
500
400
1000
500
1000
1500
1500
2000
2500
2000
2500
ST333C ..L Series
Tra pezoidal p ulse
= 55°C
3000
5000
ST333C ..L Series
Trap ezoid al pulse
3000
T
C
T
= 40°C
C
tp
tp
di/dt = 100A/µs
di/d t = 100A/µs
5000
1E1
1E14E41
1 E1
1E2
1E3
1E2
1 E3
1E4
P ulse B a sew id th (µ s)
P ulse Ba sew id th (µ s)
Fig. 15 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
ST333C..L Series
Rectan gular pu lse
di/d t = 50A/µs
tp
20 joules per p ulse
10
20 jo ules per pu lse
5
10
3
2
5
3
1
2
0.5
1
0.3
0.2
0.5
0.3
0.2
ST333C ..L Series
Sinusoidal pulse
tp
1E4 1E1
1 E4
1 E2
1E3
1E4
1E1
1 E2
1 E3
P u lse B ase w id th (µ s)
P u lse Ba se w id th (µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST333C..L Series
Bulletin I25187 rev. B 04/00
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Device: ST333C..L Series Frequency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
9
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