ST733C04LCP2P [INFINEON]
Silicon Controlled Rectifier, 940000mA I(T), 400V V(DRM);
| 型号： | ST733C04LCP2P |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 940000mA I(T), 400V V(DRM) |
| 文件： | 总9页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25239 10/06
ST733CLPbF SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
940A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST733C..L
Units
940
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
1900
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
20000
20950
2000
1820
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 800
10 to 20
V
t range
µs
q
TJ
- 40 to 125
°C
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1
ST733CLPbF Series
Bulletin I25239 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST733C..L
repetitivepeakvoltage
V
non-repetitivepeakvoltage
V
04
08
400
800
500
900
75
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
3580
3600
2900
1220
50
100μs
6800
3750
2120
960
50
180oel
50Hz
400Hz
2200
2050
1900
1660
3100
3130
5920
3240
1000Hz
1370
500
50
1070
370
50
2450
980
50
1780
770
50
A
V
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/μs
40
55
40
55
°C
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-stateConduction
Parameter
ST733C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
940 (350)
55 (85)
1900
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side
cooled
ITSM
Max. peak, one half cycle,
non-repetitive surge current
20000
20950
16800
17600
2000
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
A
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
1820
1410
1290
I2√t
Maximum I2√t for fusing
20000
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST733CLPbF Series
Bulletin I25239 10/06
On-stateConduction
Parameter
ST733C..L Units Conditions
VTM
Max. peak on-state voltage
1.63
ITM= 1700A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.09
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.20
r 1
t
Low level value of forward
slope resistance
0.32
0.29
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST733C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt
1000
A/µs
Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.5
d
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs
µs
Min Max
t
Max. turn-off time
10
20
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST733C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
75
V/μs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST733C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max., f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST733CLPbF Series
Bulletin I25239 10/06
ThermalandMechanicalSpecification
Parameter
ST733C..L
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.073
0.031
DC operation single side cooled
K/W
K/W
DC operation double side cooled
R
thC-hsMax. thermal resistance,
case to heatsink
0.011
0.005
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
ΔRthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidalconduction Rectangularconduction
Conductionangle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
60°
30°
OrderingInformationTable
Device Code
ST 73
3
C
08
L
H
K
1
P
3
7
4
6
1
2
5
8
9
10
11
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt(V/µs) 20
50
100 200 400
8 - t code
10
12
15
18
20
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
EN
EM
EL
EP
EK
--
FM *
FL * HL
FP
FK
--
--
q
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
t (µs)
q
HP
H
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
* Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Criticaldv/dt:
None = 500V/µsec(Standardvalue)
L
= 1000V/µsec (Special selection)
11
- P = Lead Free
4
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ST733CLPbF Series
Bulletin I25239 10/06
OutlineTable
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
CaseStyleTO-200AC(B-PUK)
36.5 (1.44)
All dimensions in millimeters (inches)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
120
110
100
90
130
120
110
100
90
ST733C..LSeries
(Single Side Cooled)
ST733C..LSeries
(Single Side Cooled)
R
(DC) = 0.073 K/ W
R
(DC) = 0.073 K/ W
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
80
60
30°
70
60°
30°
50
90°
60°
60
90°
120°
180°
40
120°
50
30
180°
DC
800 1000
40
20
0
0
100 200 300 400 500 600 700
200
400
600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
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5
ST733CLPbF Series
Bulletin I25239 10/06
130
130
120
110
100
90
ST7 33C . . L Se rie s
(Double Side Cooled)
ST733C . . L Se rie s
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.031 K/ W
R
(DC) = 0.031 K/ W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
80
70
70
30°
60
60
60°
30°
50
50
60°
90°
90°
120°
40
40
120°
180°
180°
30
30
DC
20
20
0
200 400 600 800 1000 1200 1400
0
500
1000
1500
2000
Average On-state Current (A)
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
2500
2000
1500
1000
500
2500
2000
1500
1000
500
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RM S Lim it
RM S Lim it
Conduction Angle
ST733C..L Series
Conduction Angle
ST733C..L Series
T = 125°C
J
T = 125°C
J
0
0
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
18000
16000
14000
12000
10000
8000
20000
18000
16000
14000
12000
10000
8000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
Initial T = 125°C
J
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Ra t e d V
Re a p p lie d
RRM
ST733C..L Series
ST733C..LSeries
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
6
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ST733CLPbF Series
Bulletin I25239 10/06
0.1
10000
1000
100
ST733C..L Series
0.01
T = 25 ° C
J
Steady State Value
= 0.073 K/ W
R
T = 125°C
J
thJ-hs
(Single Side Cooled)
= 0.031 K/ W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST733C..L Series
0.001
0.001 0.01
0.1
1
10
100
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristic
250
200
150
100
50
450
400
350
300
250
200
150
100
50
I
= 1500 A
TM
ST7 33C . . L Se r ie s
T = 125 °C
I
= 1500 A
TM
J
1000 A
500 A
1000 A
500 A
ST733C..LSeries
T = 125 °C
J
0
0
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Snubber circuit
1E5
1E4
1E3
1E2
Snubber circuit
R = 10 ohms
s
R
C
V
= 10 ohms
= 0.47 µF
= 80% V
s
C
V
= 0.47 µF
= 80%V
s
s
DRM
D
DRM
D
50 Hz
100
200
400
50 Hz
100
200
400
1000
1000
1500
1500
2500
3000
2500
3000
ST733C..LSeries
Sinusoidal pulse
T = 40°C
ST733C..L Series
Sinusoidal pulse
5000
T = 55 ° C
5000
C
tp
tp
C
1E1
1E2
1E3
1E41
1
E1
1E2
1E3
1E4
Pulse Basew id th (µs)
Pulse Ba sew id t h ( µs)
Fig. 13 - Frequency Characteristics
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ST733CLPbF Series
Bulletin I25239 10/06
1E5
ST733C..L Series
Trapezoidal pulse
T =40°C
Snubber circuit
R =10 ohms
C =0.47µF
s
ST733C..LSeries
Trapezoidal pulse
T =55°C
Snubber circuit
R =10 ohms
C =0.47µF
s
s
s
C
C
tp
V =80%V
D
V =80%V
D
di/ dt=50A/µs
di/dt=50A/ µs
DRM
DRM
1E4
1E3
1E2
100
200
50 Hz
50 Hz
100
400
200
400
500
1000
1500
2000
2500
3000
500
1000
1500
2000
2500
3000
5000
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth(µs)
Pulse Basewidth(µs)
Fig. 14 - Frequency Characteristics
1E5
1E4
1E3
1E2
ST733C..L Series
Trapezoidal pulse
T =40°C
C
di/ dt=100A/µs
Snubber circuit
R =10 ohms
C =0.47µF
s
ST733C..LSeries
Trapezoidal pulse
T =55°C
C
di/ dt=100A/µs
Snubber circuit
R =10 ohms
C =0.47µF
s
s
s
tp
V =80%V
D
V =80%V
D
DRM
DRM
50Hz
100
200
50Hz
100
200
400
400
500
500
1000
1500
2000
1000
1500
2000
2500
2500
3000
3000
5000
1E1
1E4
1E1
1E2
1E3
1E
1E2
1E3
1E4
Pulse Basewidth(µs)
Pulse Basewidth(µs)
Fig. 15 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
ST733C..LSeries
Re c t a ng ula r p ulse
ST733C..LSeries
Sinusoidal pulse
di/dt = 50A/µs
tp
tp
20 joules per pulse
10
20 joulesper pulse
5
10
3
5
2
3
1
2
0.5
1
0.4
0.3
0.5
0.4
0.3
1E1
1E141
1E1
1E2
Pulse Ba sew id t h (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E3
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
8
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ST733CLPbF Series
Bulletin I25239 10/06
100
10
1
Rectangulargatepulse
(1) PGM=10W, tp =20ms
a) Recommended loadline for
rated di/ dt :20V, 10ohms; tr<=1µs
b) Recommended loadline for
<=30% rateddi/ dt :10V, 10ohms
tr<=1 µs
(2) PGM=20W, tp =10ms
(3) PGM=40W, tp =5ms
(4) PGM=60W, tp =3.3ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Device:ST733C..L Series
0.1
Frequency Limitedby PG(AV)
0.1
0.001
0.01
1
10
100
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
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9
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