ST780C06L2 [INFINEON]
Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2;
| 型号： | ST780C06L2 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2 栅 栅极 |
| 文件： | 总7页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25192 rev. C 04/00
ST780C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
1350A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST780C..L
Units
1350
55
A
°C
@ T
hs
IT(RMS)
2700
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
24400
25600
2986
2726
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 600
150
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
ST780C..L
peak and off-state voltage
repetitive peak voltage
V
V
04
06
400
600
500
700
80
On-state Conduction
Parameter
ST780C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
1350 (500)
55 (85)
2700
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
24400
25600
20550
21500
2986
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
2726
KA2s
2112
1928
I2√t
Maximum I2√t for fusing
29860
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.80
0.90
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
0.14
0.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
slope resistance
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.31
600
V
I = 3600A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST780C..L
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
t
Typical turn-off time
150
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
Blocking
Parameter
ST780C..L
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
mA TJ = TJ max, rated VDRM/VRRM applied
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
80
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST780C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
200
-
T
J = - 40°C
IGT
DC gate current required
to trigger
mA TJ 25°C
=
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
TJ = 125°C
TJ = - 40°C
2.5
1.8
1.1
-
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ
= 25°C
T
J = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST780C..L
-40 to 125
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
°C
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.073
0.031
DC operation single side cooled
DC operation double side cooled
K/W
K/W
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.006
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
3
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 78
0
C
06
L
1
7
8
1
2
3
4
5
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
120
110
100
90
13 0
12 0
11 0
10 0
9 0
S T 780 C ..L S erie s
( Sin g le S id e C oo led )
ST780C..L Series
(Single Side Cooled)
R
(D C ) = 0.0 73 K/W
R
(DC) = 0.073 K/W
thJ-hs
th J-hs
C ondu ction P eriod
8 0
C ondu ction Angle
7 0
80
6 0
30°
70
60°
30°
90°
5 0
60°
60
120°
4 0
90°
180°
800
50
1 20°
3 0
180°
D C
40
2 0
0
200
400
600
1000
0
2 00
4 0 0
6 00
80 0 10 0 0 1 2 00 1 4 00
A ve ra g e O n -sta te C u rre n t (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
1 3 0
1 2 0
1 1 0
1 0 0
90
130
ST 780C ..L Se ries
(D ou b le Sid e C o ole d )
ST780C..L Series
(Double Side Cooled)
120
110
100
90
R
(D C ) = 0.03 1 K /W
R
(DC) = 0.031 K/W
th J- hs
th J-hs
C ondu ction Period
C ond uction Angle
80
80
70
70
60
3 0°
60
6 0°
30°
60°
50
50
90°
90°
120°
12 0°
40
40
180°
18 0°
30
30
D C
20
20
0
50 0
1 0 00
15 0 0 2 00 0
2 5 00
3 0 00
0
400
800
1200
1600
2000
Av era g e O n -sta te C urre n t ( A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2500
2000
1500
1000
500
0
3500
3000
2500
2000
1500
1000
500
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
Con duction Period
C on duction An gle
ST780C..L Series
ST780C..L Series
T
= 125°C
T
= 125°C
J
J
0
0
500
1000 1500 2000 2500 3000
0
400
800
1200
1600
2000
Average On-state Current (A)
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
26000
2 2 00 0
2 0 00 0
1 8 00 0
1 6 00 0
1 4 00 0
1 2 00 0
1 0 00 0
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
A t A n y R a te d L oa d C on d itio n An d W ith
R a te d
V
A p p lied Fo llow in g S u rg e.
RRM
24000
In itia l T
= 1 25°C
J
@
@
60 H z 0.0083
50 H z 0.0100
s
s
In itial T = 125°C
J
22000
No Voltage Reapplied
Rated V
Reapplied
20000
RRM
18000
16000
14000
S T 780C ..L S eries
12000 ST780C..L Series
10000
0.01
1
10
1 0 0
0.1
Pulse Train Duration (s)
1
Numb er O f Equa l Amp litude Ha lf C ycle C urrent Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
www.irf.com
ST780C..L Series
Bulletin I25192 rev. C 04/00
10 0 00
1 0 00
10 0
T
T
=
=
25° C
J
J
125° C
ST 780 C ..L S e rie s
0 .5
1
1 .5
2
2 .5
In sta n ta n e o us O n -sta te V o lta g e (V )
Fig. 9 - On-state Voltage Drop Characteristics
0.1
Stea d y S ta te V a lu e
0.07 3 K /W
(Sin g le S id e C ooled )
0.03 1 K /W
R
=
th J-hs
R
=
th J- hs
(D ou b le S id e C o oled )
(D C O p e ra tion )
0.0 1
S T 780C ..L S eries
0.0 01
0 .0 01
0.0 1
0. 1
Sq u a re W a ve P u lse D u ra tion (s)
1
1 0
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 0 0
R ec ta n g u la r g ate p u lse
a ) R e com m e n d ed loa d lin e fo r
ra ted d i/d t : 20V , 10oh m s; tr< = 1 µ s
b ) Re com m e n d ed loa d lin e f or
< = 30% ra te d d i/d t : 1 0V , 10 oh m s
tr< = 1 µ s
(1) P G M
(2) P G M
(3) P G M
(4) P G M
=
=
=
=
10W , tp
20W , tp
40W , tp
60W , tp
=
=
=
=
4m s
2m s
1m s
0.66m s
10
(a )
(b )
1
(2 )
(1 )
(3) (4 )
V G D
IG D
Fre qu e n cy Lim ited by PG (AV )
1 0 1 00
D e vic e: S T 780C ..L Se rie s
0 .1
0. 1
0 .00 1
0. 01
1
In stan ta n e ou s G a te C u rren t (A )
Fig. 11 - Gate Characteristics
7
www.irf.com
相关型号：
ST780C06L2L
Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2
INFINEON
ST780C06L3
Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2
INFINEON
©2020 ICPDF网 联系我们和版权申明