T458B_PA [INFINEON]

Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max,;


型号：	T458B_PA
厂家：	Infineon
描述：	Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, 射频微波
文件：	总4页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

T458B_PA

17 – 24 GHz GaAs Power Amplifier/Driver MMIC

• 4 Stage Monolithic Microwave Integrated Circuit

(MMIC) Amplifier

• Input/Output matched (incl. bond wires)

• Frequency range: 17 GHz to 24 GHz

• High Isolation > 50 dB

chip size: 4.2 mm x 1.8 mm

• Gain > 22 dB

• P_-1dB> 23 dBm, P_sat> 24 dBm

ESD: Electrical discharge sensitive device, observe handling precautions!

Description:

This 4 stage GaAs MMIC power amplifier is intended for use in radio link applications. It

provides an output power of 23 dBm at 1 dB gain compression. The device is fabricated with

a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility Transistor

processing technology.

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Chip

Electrical Specifications: (V_D= 5 – 6 V, I_D= 300 mA)

Parameter

Min

Typ

Max

Unit

GHz

dBm

Frequency Range

P_-1dB

- 6

- 3

Gain

P_sat

dBm

PAE

Input Return Loss (incl. bond wire)

Output Return Loss (incl. bond wire)

Infineon Technologies AG i. Gr.

pg. 1/4

Preliminary data sheet 07.05.99

This is information on a product that is under development. Data and specificatios are subject to change without notice.

T458B_PA

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Infineon Technologies AG i. Gr.

pg. 2/4

Preliminary data sheet 07.05.99

This is information on a product that is under development. Data and specificatios are subject to change without notice.

T458B_PA

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Chip thickness

Chip size

Bond pads

Bond pad material

Chip passivation

95µm

4,2 mm * 1,8 mm

100 µm * 100 µm

Au (plated gold)

SiN (silicon nitride)

Suggested measurement setup:

Operating Point:

C > 100 pF,

R = 18 Ohms

5V <Vd < 6V

0V < Vg < 0.35V

300mA < Id < 350mA

Vd1

Vd2

Vd3

Vd4

RF Input

RF Output

Vg2

Vg3

Vg1

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250°C

180°C

100 Hz

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250°C

150°C

1: 2,5 g

2: 3,1 g

3: 3,2 g

4: 3,0 g

5: 2,8 g

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50 g

25 µm

25 g

17 µm

Infineon Technologies AG i. Gr.

pg. 3/4

Preliminary data sheet 07.05.99

This is information on a product that is under development. Data and specificatios are subject to change without notice.

T458B_PA

Published by Infineon Technologies AG i. Gr., Wireless Products Division, GaAs & Sensor Subdivision,

WS GS PM P, Balanstraße 73, 81541 Munich, Germany; Postal Address: P.O. Box 800949, 81609

Munich, Germany.

As fas as patents or other rights of third parties are concerned, liability is only assumed for

components per se, not for applications, processes and cirucits implemented within components

or assemblies.

The information describes the type of component and shall not be considered as assured

characteristics.

Terms of delivery and rights to change design reserved.

For questions on technology, delivery, and prices please contact the Offices of Infineon in

Germany or the Infineon Companies and Representatives worldwide.

Due to technical requirements components may contain dangerous substances. For information

on the type in question please contact your nearest Infineon Office.

Infineon Technologies AG i. Gr. is an approved QS9000 and ISO9001 manufacturer.

Infineon Technologies AG i. Gr.

pg. 4/4

Preliminary data sheet 07.05.99

This is information on a product that is under development. Data and specificatios are subject to change without notice.

T458B_PA [INFINEON]

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