TLE4946-1L [INFINEON]
High Precision Hall-Effect Switch; 高精度霍尔效应开关
| 型号： | TLE4946-1L |
| 厂家： | 
Infineon |
| 描述： | High Precision Hall-Effect Switch |
| 文件： | 总9页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Precision Hall-Effect Switch
TLE4946-1L
Data Sheet Version 1.0
2004-03-04
Features
• 2.7V to 24V supply voltage operation
• Operation from unregulated power supply
• High sensitivity and high stability of the
magnetic switching points
• High resistance to mechanical stress by Active
Error Compensation
• Reverse battery protection (-18V)
• Superior temperature stability
• Peak temperatures up to 195°C without
damage
• Low jitter (typ. 1µs)
• High ESD performance (±6kV HBM)
• Digital output signal
• Unipolar version
• Leaded package P-SSO-3-2
P-SSO-3-2
Type
Ordering Code
Package
TLE4946-1L
Q62705-K0733
P-SSO-3-2
Functional Description
The TLE4946-1L is an integrated circuit Hall-effect sensor designed specifically for highly
accurate automotive and industrial applications. Precise magnetic switching points and
high temperature stability are achieved by active compensation circuits and chopper
techniques on chip.
TLE4946-1L
Circuit Description
The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation
circuits, oscillator and output transistor.
The bias generator provides currents for the Hall probe and the active circuits.
Compensation circuits stabilize the temperature behavior and reduce technology
variations.
The Active Error Compensation rejects offsets in signal stages and the influence of
mechanical stress to the Hall probe caused by molding and soldering processes and
other thermal stresses in the package. This chopper technique together with the threshold
generator and the comparator ensure high accurate magnetic switching points.
Figure 1: Block Diagram
Data Sheet
2/9
2004-03-04
TLE4946-1L
Pin Configurations
Figure 2: Pin Configuration
Pin Definition and Functions
Pin
1
Symbol
Function
Supply voltage
Ground
VS
2
GND
Q
3
Output
Data Sheet
3/9
2004-03-04
TLE4946-1L
Absolute Maximum Ratings
Tj = -40 to 150°C
Parameter
Symbol min.
max.
18
Unit Conditions
Supply Voltage
VS
-18
-18
-18
-50
V
24
for 1h ,Rs>=200 Ohm
26
+50
for 5min, Rs>=200 Ohm
Supply Current through
protection device
Output Voltage
IS
VQ
IQ
mA
V
-0.7
-0.7
-50
18
26
+50
for 5 min @ 1.2 kOhm pull up
Continuous Output
Current
Junction Temperature
mA
°C
Tj
-
155
165
for 2000 h (not additive)
for 1000 h (not additive)
for 168 h (not additive)
for 3x1 h (additive)
175
195
Storage Temperature
Magnetic Flux Density
TS
B
-40
-
150
°C
mT
unlimit.
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection
Human Body Model (HBM) tests according to:
EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Parameter
Symbol
max.
± 6
Unit
Conditions
ESD Voltage
VESD
kV
HBM, R= 1.500 Ohm,
C= 100pF; TA= 25°C
Operating Range
Parameter
Symbol min. typ.
max.
Unit
Conditions
Supply Voltage
VS
2.7
-
18
24
V
1h with RS >= 200 Ohm
for 5min RS >= 200 Ohm
26
18
150
175
20
Output Voltage
Junction Temperature
VQ
Tj
-0.7
-40
-
-
V
°C
for 168 h
Output Current
IQ
0
-
mA
Data Sheet
4/9
2004-03-04
TLE4946-1L
AC/DC Characteristics
over operating range, unless otherwise specified. Typical values correspond to VS=12V
and TA=25°C.
Parameter
Symbol min.
typ.
4
max. Unit Conditions
Supply Current
IS
ISR
2
0
-
6
1
mA VS = 2.7V .. 18V
mA VS= -18V
Reverse Current
Output Saturation Voltage
Output Leakage Current
Output Fall Time
Output Rise Time
Chopper Frequency
Switching Frequency
Delay Time2)
0.2
0.3
0.05
0.02
0.4
320
-
VQSAT
IQLEAK
tf
0.6
10
1
V
µA
µs
IQ= 20mA
-
for VQ=18 V
-
RL= 1.2 kOhm ;CL=50pF
RL= 1.2 kOhm ;CL=50pF
tr
-
1
µs
fOSC
fSW
td
-
-
kHz
kHz
µs
0
-
151)
-
13
1
Output Jitter3)
tQJ
-
-
µsRMS B = Square-Wave Signal
1kHz
Repeatability of magnetic
thresholds4)
BREP
-
20
-
µTRMS
∆B/∆t>12mT/ms
Power-On Time5)
Thermal Resistance6)
P-SSO-3-2
tPON
RthJA
-
-
13
-
-
µs
K/W
VS >= 2.7V
190
1) To operate the sensor at the max. switching frequency, the value of the magnetic signal
amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency
2) of the low pass filter in the signal path.
3) Systematic delay between magnetic threshold reached and output switching.
4) Jitter is the unpredictable deviation of the output switching delay.
BREP is equivalent to the noise constant.
5) Time from applying VS >= 2.7 V to the sensor until the output state is valid.
6) Thermal resistance from junction to ambient.
e.g.: VS=12.0 V, IS_typ=4 mA, VQSAT_typ=0.3 V, IQ=20 mA => Power Dissipation Pdis=54.0 mW.
In TA = Tj – (RthJA * Pdis) = 175 °C – (190 K/W * 0.054 W) => TA = 164.7 °C
Magnetic Characteristics
over operating range, unless otherwise specified. Typical values correspond to VS=12V.
Parameter
Symbol Tj [°C] min.
typ.
max.
Unit
Conditions
Operate Point
TLE4946-1L
BOP
mT
-40
25
11.3
11.0
10.5
15.4
15.0
14.3
19.5
19.0
18.1
150
Release Point
TLE4946-1L
BRP
BHYS
TC
mT
mT
-40
25
-19.5 -15.4 -11.3
-19.0 -15.0 -11.0
-18.1 -14.3 -10.5
150
Hysteresis
TLE4946-1L
-40
25
-
22.0
-
-
30.0
-
-
38.0
-
150
Temperature
ppm/°C
Compensation of
Magnetic Thresholds
-
-
-350
-
Positive magnetic fields related with south pole of magnet to the branded side of package.
Note: Typical characteristics specify mean values expected over the production spread.
Data Sheet
5/9
2004-03-04
TLE4946-1L
Timing Diagram
A pplied
m a gn etic
field
B O P
B R P
tr
tf
td
V Q
90 %
td
10 %
Figure 3: Timing Definition
Data Sheet
6/9
2004-03-04
TLE4946-1L
Package Dimension P-SSO-3-2
0.8 x 45°
±0.08
±0.05
4.06
4.19
±1
12.7
0.2
±0.05
1.52
1.9 MAX.
0.79
0.2 +0.1
±0.05
0.4
1
3
±0.25
1.27
Adhesive Tape
0.25 -0.15
Tape
±0.4
±0.3
±0.1
6.35
4
0.5
±0.3
12.7
Figure 4: Package Dimension
Figure 5: Distance Chip to Upper Side of IC
Data Sheet
7/9
2004-03-04
TLE4946-1L
Figure 6: Marking
Data Sheet
8/9
2004-03-04
TLE4946-1L
TLE4946-1L
Revision History:
Previous Version:
Version 1.0
2004-03-04
Page
Subjects (major changes since last revision)
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
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Edition 2001-02-22
Published by Infineon Technologies AG
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
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We hereby disclaim any and all warranties, including but not limited to warranties of non-
infringement, regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your
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Warnings
Due to technical requirements components may contain dangerous substances. For information on
the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
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endangered.
Data Sheet
9/9
2004-03-04
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