TLE4966V-1G [INFINEON]
The TLE4966V-1G is specifically designed to detect the rotation direction and the rotation speed of a pole wheel.The sensing direction is in-plane to the sensor surface. Even at high distances to the hall elements the direction will be detected correctly.;
| 型号： | TLE4966V-1G |
| 厂家： | 
Infineon |
| 描述： | The TLE4966V-1G is specifically designed to detect the rotation direction and the rotation speed of a pole wheel.The sensing direction is in-plane to the sensor surface. Even at high distances to the hall elements the direction will be detected correctly. 传感器 换能器 |
| 文件： | 总24页 (文件大小：1518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLE4966V-1G
In Plane Sensing with Vertical Dual Hall Effect Latch
for Automotive Applications
Data Sheet
Revision 1.0, 2018-12-06
Sense & Control
Edition 2018-12-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
TLE4966V-1G
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2018-12-06
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
3
Revision 1.0, 2018-12-06
TLE4966V-1G
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Start-up Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.1
2.2
2.3
2.4
2.5
3
Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electro Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1
3.2
3.3
3.4
3.5
4
5
Timing Diagrams for the Speed and Direction Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
4
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TLE4966V-1G
List of Figures
List of Figures
Figure 1-1 Image of TLE4966V in the PG-TSOP6-6-9 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 1-2 Target Application (top and side view): Sensing Direction parallel to target wheel . . . . . . . . . . . . . 7
Figure 2-1 Target Application: Side view and top view for In-Plane Sensing. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 2-2 Magnetic field signal with the corresponding speed & direction output including the definition of the
direction signal 9
Figure 2-3 PG-TSOP6-6-9 Pin Configuration and sensitive area (d = 1.25mm) (see table 2-2) . . . . . . . . . . . 10
Figure 2-4 Functional Block Diagram of the TLE4966V-1G. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 2-5 Start-up behavior of the at different magnetic start conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 2-6 Basic Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 2-7 Enhanced Application Circuit for very high ESD robustness on system level . . . . . . . . . . . . . . . . 13
Figure 3-1 EMC test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 4-1 Timing Diagram TLE4966V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 4-2 TLE4966V - Output Voltage Signal over applied magnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 4-3 TLE4966V - Definition of the direction signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-1 Image of TLE4966V in the PG-TSOP6-6-9 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-2 PG-TSOP6-6-9 Package Outline (All dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-3 PG-TSOP6-6-9 Packing (All dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-4 Footprint of PG-TSOP6-6-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-5 Distance between chip and package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-6 Marking of TLE4966V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Data Sheet
5
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TLE4966V-1G
List of Tables
List of Tables
Table 1-1 Ordering Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2-1 Output Pin Q1 Direction Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2-2 Pin Description PG-TSOP6-6-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 3-1 Absolute Maximum Rating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3-2 ESD Protection (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3-3 Operating Conditions Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 3-4 General Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 3-5 Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 3-6 Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 3-7 Electro Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 4-1 Output Pin Q1 Direction Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Data Sheet
6
Revision 1.0, 2018-12-06
TLE4966V-1G
Product Description
1
Product Description
1.1
Target Applications
The TLE4966V-1G is specifically designed to detect the rotation direction and the rotation speed of a pole
wheel.The sensing direction is in-plane to the sensor surface. Even at high distances to the hall elements the
direction will be detected correctly.
Figure 1-1 Image of TLE4966V in the PG-TSOP6-6-9 package
N
S
Hall Elements
S
N
N
S
S
N
N
S
Rotation
Direction
N
S
S
S
N
4
5
6
3
2
1
N
S
S
N
Branded Side of
IC
N
Magnetic
Encoder
Figure 1-2 Target Application (top and side view): Sensing Direction parallel to target wheel
1.2
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
In-Plane Sensing for parallel mounting of magnetic encoder and sensor
Low current consumption
Direction Detection
Speed output for index counting applications
3.5V to 32V operating supply voltage
Operating from unregulated power supply
Reverse polarity protection (-18V)
Over voltage capability up to 42V without external resistor
Output over current and over temperature protection
High robustness to mechanical stress by Active Error Compensation
Low drift of magnetic thresholds
Low jitter (typ. 0.3us)
SMD package PG-TSOP6-6-9
Table 1-1 Ordering Information
Product Name
Product Type
Dual Vertical Hall Latch
Ordering Code
Package
TLE4966V-1G
SP002983184
PG-TSOP6-6-9
Data Sheet
7
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TLE4966V-1G
Functional Description
2
Functional Description
The TLE4966V-1G is specifically designed to detect the direction and rotational speed of a pole wheel as shown
in Figure 1-2.
2.1
General
The new Infineon Vertical Double Hall Switch TLE4966V-1G has integrated the functionality of detecting speed
and direction of a rotating magnet, commonly known as pole wheel.
Note: Completely new is the in plane field direction which will be detected with the TLE4966V-1G shown in
Figure 2-1 which enables completely new application layouts.
V-Hall
elements
Centered
Pin3
Q1
Pin4
VDD
Branded Side
Direction
S
N
6
1
Pin1
Q2
Speed
Pin6
GND
Figure 2-1 Target Application: Side view and top view for In-Plane Sensing
The sensor provides a speed output at Q2 with the status (high or low) corresponding to the magnetic field value.
For positive magnetic fields (south pole) exceeding the threshold BOP the output is low, whereas for negative
magnetic fields (north pole) lower than BRP the output switches to high. The output Q1 can be either high or low
depending on the direction of rotation of the pole wheel. This direction information is calculated internally. (see
Table 2-2)
Designed in a new technology, this device offers high voltage capabilities with very small current consumption.
The product can be operated from unregulated power supplies which offers our customers unique freedom of
design for their system.
This product is AEC Q100 certified and enables our customers to build systems for the highest automotive quality
requirements. The product has a PG-TSOP6-6-9 package, which is RoHs compliant and fulfills the usual
automotive environmental guidelines.
Application Examples are:
•
•
•
Window lifter (index counting)
Power closing (index counting)
All applications with the need of speed and direction detection.
Figure 2-2 and Table 2-1 show the mapping of a pole wheel with the two corresponding output signals of the
device.
Data Sheet
8
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TLE4966V-1G
Functional Description
N
S
N
S
N
S
N
S
N
S
N
S
N
Signal @
Element1
BOP1 & BOP2
BRP1 & BRP2
Signal @
Element2
Speed Signal Q2
Direction Signal Q1
Direction Change
Figure 2-2 Magnetic field signal with the corresponding speed & direction output including the definition
of the direction signal
Table 2-1 Output Pin Q1 Direction Signals
Rotation direction
Counterclockwise
Clockwise
State of direction output Q1
Low
High
Data Sheet
9
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TLE4966V-1G
Functional Description
2.2
Pin Configuration (top view)
d
6
5
4
h
direction
speed
1
2
PG-TSOP6-6-5
3
Figure 2-3 PG-TSOP6-6-9 Pin Configuration and sensitive area (d = 1.25mm) (see table 2-2)
Table 2-2 Pin Description PG-TSOP6-6-9
Pin No.
Symbol
Q2
Function
1
2
3
4
5
6
Speed
GND
Q1
Recommended connection to GND
Direction
VDD
Supply voltage
GND
GND
Recommended connection to GND
Ground
The sensitive elements are placed in an optimized distance (d) to guarantee the direction detection. To
compensate package stress the sensitive elements are placed in the middle of the package (h).
Data Sheet
10
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TLE4966V-1G
Functional Description
2.3
Block Diagram
VDD
Voltage Regulator
(reverse polarity protected)
ESD
GND
Bias and
Compensation
Circuits
Oscillator
& Sequencer
Q2 (=Speed)
Control
Overtemperature
& short-circuit
protection
Speed
&
Direction
Detection
Q1 (=Direction)
Control
Overtemperature
& short-circuit
protection
Comparator
with
Hysteresis
Chopped
Hall
Probe
Amplifier
Filter
Figure 2-4 Functional Block Diagram of the TLE4966V-1G
The chopped Dual Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and
output transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the
temperature behavior and reduce influence of technology variations.
The active error compensations (chopping technique) rejects offsets in the signal path. Therefore the influence of
mechanical stress to the Hall elements caused by molding and soldering processes and other thermal stress in
the package is minimized. The chopped measurement principle together with the threshold generator and the
comparator ensures highly accurate and temperature stable magnetic thresholds. The output transistor has an
integrated over current and over temperature protection to prevent the device from destruction.
Data Sheet
11
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TLE4966V-1G
Functional Description
2.4
Start-up Behavior
The magnetic threshold exhibit a hysteresis Bhys = Bop - Brp. In case of a power-on with a magnetic field B within
hysteresis (Brp < B < Bop) the output of the sensor is set to the pull up voltage level “Vq” per default. After the first
crossing of Bop or Brp of the magnetic field the internal decision logic is set to the corresponding magnetic input
value.
V
DDA is the internal supply voltage which is following the external supply voltage VDD.
This means for B > Bop the output is switching for B > Brp and Bop > B > Brp the output stays at VQ
VDDA
tPon
3.5V
The device always applies
Power on ramp
VQ level at start-up
t
VQ
independent from the
applied magnetic field !
Magnetic field above threshold
B > BOP
t
VQ
Magnetic field below threshold
B < BRP
t
t
VQ
Magnetic field in hysteresis
BOP > B > BRP
Figure 2-5 Start-up behavior of the at different magnetic start conditions
Data Sheet
12
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TLE4966V-1G
Functional Description
2.5
Application Circuit
The Figure 2-6 below shows the basic option of an application circuit. The Resistor Rq has to be in a dimension
to match the applied Vs to keep Iq limited to the operating range of maximal 10mA.
For example: Vs = 12V, Iq = 10mA --> R = 12V / 0.01A = 1.2kΩ.
In Figure 2-7 the additional ESD Diodes are optional to achieve an increased ESD robustness at the Q pins.
Additional with the (optional) 47nF between Vdd and GND a high system level robustness is achieved.
VS
RQ RQ
Q1
Q2
GND
Figure 2-6 Basic Application Circuit
VS
RQ = 1.2kΩ
RS = 100Ω
VDD
Q1
CDD = 47nF
Q2
TVS diodes
GND
e.g. ESD24VS2U
Figure 2-7 Enhanced Application Circuit for very high ESD robustness on system level
Data Sheet
13
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TLE4966V-1G
Specification
3
Specification
3.1
Absolute Maximum Ratings
Table 3-1 Absolute Maximum Rating Parameters
Parameter
Symbol
Limit Values
Unit Note / Test Condition
Min.
Max.
Supply voltage
VDD
-18
32
42
V
10h, no external resistor required
Output voltage
VQ
IQ
-0.5
-35
-40
32
V
Reverse output current
Junction temperature
mA
°C
TJ
155
165
175
for 2000h (not additive)
for 1000h (not additive)
for 168h (not additive)
Storage temperature
TS
-40
150
200
°C
Thermal resistance
Junction ambient
RthJA
K/W for PG-TSOP6-6-9
Thermal resistance
Junction lead
RthJL
100
K/W for PG-TSOP6-6-9
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (TSPOP6 example):
e.g for: VDD = 12 V, IS = 10mA, VQSAT = 0.5 V, IQ = 10mA
Power dissipation: PDIS = 12 V x 10mA + 2 x (0.5 V x 10mA) = 120mW + 10mW = 130mW
Temperature ∆T = RthJA x PDIS = 200K/W x 130mW = 26K
For TA = 100°C: TJ = TA + ∆T = 100°C + 26K = 126°C
Table 3-2 ESD Protection1) (TA = 25°C)
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Max.
+2
ESD voltage (HBM)2)
System level test
VESD
-2
-6
kV
kV
R = 1.5kΩ, C = 100pF
Figure 2-7 3)
+6
1) Characterization of ESD is carried out on a sample basis.
2) Human Body Model (HBM) tests according to EIA/JESD22-A114
3) Gun test (2kΩ/330pF or 330Ω/150pF) according to ISO 10605-2008
Data Sheet
14
Revision 1.0, 2018-12-06
TLE4966V-1G
Specification
3.2
Operating Range
Attention: The following operating conditions must not be exceeded in order to ensure correct operation
of the TLE4966V-1G. All parameters specified in the following sections refer to these operating
conditions unless otherwise mentioned.
Table 3-3 Operating Conditions Parameters
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
3.5
-0.3
-40
0
Max.
321)
32
Supply voltage
Output voltage
VDD
VQ
Tj
V
V
Junction temperature
Output current
Magnetic signal input frequency2) fmag
150
10
°C
mA
kHz
IQ
0
5
1) Latch-up test with factor 1.5 is not covered. Please see max ratings also.
2) For operation at the maximum switching frequency the magnetic input signal must be 1.4 times higher than for static fields.
This is due to the -3dB corner frequency of the internal low-pass filter in the signal path.
Data Sheet
15
Revision 1.0, 2018-12-06
TLE4966V-1G
Specification
3.3
Electrical Characteristics
Table 3-4 General Electrical Characteristics
Parameter
Symbol
Values
Typ.
5.8
Unit Note / Test Condition
Min.
Max.
7.5
1
Supply current
IS
3.9
mA
mA
V
Reverse current
ISR
-
0.05
0.2
for VDD = -18V
IQ = 10mA
Output saturation voltage
Output leakage current
Output current limitation
VQSAT
IQLEAK
IQLIMIT
-
0.5
5.0
40
-
-
μA
mA
T=150°C, 12V
20
30
internally limited & thermal
shutdown
Output fall time1)
Output rise time1)
Output jitter3)1)
tf
0.1
0.1
0.2
0.2
0.3
45
1
1
1
μs
1.2kΩ2)/ 50pF, see Figure 4-1
1.2kΩ2)/ 50pF, see Figure 4-1
For square wave signal with 1kHz
tr
μs
tQJ
BNeff
μs
Effective noise value of the
magnetic switching points4)1)
μTRMS
Delay time5)1)
td
8
20
30
μs
Bpeak=10mT, Ramp=500mT/s;
see Figure 4-1
Signal Count Delay1)
Power-on time6)1)
Chopper frequency1)
tdc
50
48
400
84
1000 ns
1.2kΩ/50pF @ Vq=12V, Direction
before Speed Signal, 50% to 50%
tPON
fOSC
120
μs
VDD = 3.5 V, B ≤ BRP - 0.5 mT or
B ≥ BOP + 0.5 mT
1300
kHz
1) Not subject to production test, verified by design/characterization
2) Current limitation has to be taken into consideration for Vs > 12V in order not to exceed 10mA
3) Output jitter is the 1σ value of the output switching distribution.
4) The magnetic noise is normal distributed and can be assumed as nearly independent to frequency without sampling noise
or digital noise effects. The typical value represents a the rms-value and corresponds therefore to a 1 σ probability of normal
distribution. Consequently a 3 σ value corresponds to 0.3% probability of appearance.
5) Systematic delay between magnetic threshold reached and output switching.
6) Time from applying VDD = 3.0 V to the sensor until the output is valid.
Data Sheet
16
Revision 1.0, 2018-12-06
TLE4966V-1G
Specification
3.4
Magnetic Characteristics
Table 3-5 Magnetic Characteristics
Parameter
Symbol T (°C)
Values
Typ.
2.8
Unit
Note / Test Condition
Min.
1.1
Max.
4.5
Operating point
BOP
BRP
BHys
-40
25
mT
0.9
2.5
4.1
150
-40
25
0.4
1.9
3.3
Release point
Hysteresis
-4.5
-4.1
-3.3
3.6
-2.8
-2.5
-1.9
5.3
-1.1
-0.9
-0.4
7.4
mT
mT
mT
150
-40
25
3.4
5.0
6.8
150
2.5
3.7
5.2
Magnetic Matching BMatch
-1.0
+1.0
for (Bop1 - Bop2) and (Brp1 - Brp2);
-40..125°C
-1.5
-1.0
-1.5
+1.5
+1.0
+1.5
-40..150°C
Magnetic Offset
BOff
TC
mT
mt
(Bop + Brp) / 2; -40..125°C
(Bop + Brp) / 2; -40..150°C
Temperature
Compensation1)
-1700
ppm/K ferrite magnet
1) Not subject to production test, verified by design/characterization
The initial status of Q1 and Q2 after power on is Vq high (=OFF)!
Data Sheet
17
Revision 1.0, 2018-12-06
TLE4966V-1G
Specification
3.5
Electro Magnetic Compatibility
Characterization of Electro Magnetic Compatibility is carried out on a sample basis from one qualification lot. Not
all specification parameters have been monitored during EMC exposure.
VS
VQ =5 V
RQ=1.2kΩ
RS = 100Ω
VDD
Q
1
CDD =47nF
Q2
TVS diodes
e. g. ESD24VS2U
GND
Figure 3-1 EMC test circuit
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3-1(with external resistor, Rs = 100Ω)
Table 3-6 Magnetic Compatibility
Parameter
Symbol
Level / Type
Status
Testpulse 1
VEMC
-90V
C
Testpulse 2a1)
Testpulse 2b
Testpulse 3a
Testpulse 3b
Testpulse 42)
Testpulse 5b3)
60V/110V
10V
-150V
100V
-7V / -5.5V
US = 86.5 V / US* = 28.5 V
A/C
C
A
A
A
A
1) ISO 7637-2 (2004) describes internal resistance = 2Ω (former 10Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.
3) A central load dump protection of 42 V is used. US* = 42 V-13.5V.
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3-1 (without external resistor, RS = 0Ω)
Table 3-7 Electro Magnetic Compatibility
Parameter
Symbol
Level / Type
Status
Testpulse 1
VEMC
-50V
45V
10V
-150V
C
A
C
A
A
A
A
Testpulse 2a1)
Testpulse 2b
Testpulse 3a
Testpulse 3b
Testpulse 42)
Testpulse 5b3)
100V
-7V / 5.5 V
US = 86.5 V / US* = 28.5 V
1) ISO 7637-2 (2004) describes internal resistance = 2Ω (former 10Ω).
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.
3) A central load dump protection of 42 V is used. US* = 42 V-13.5V.
Data Sheet
18
Revision 1.0, 2018-12-06
TLE4966V-1G
Timing Diagrams for the Speed and Direction Output
4
Timing Diagrams for the Speed and Direction Output
Applied Magnetic Field
BOP
BRP
td
tf
td
tr
VQ
90%
10%
Figure 4-1 Timing Diagram TLE4966V
VQ
B
BRP
0
BOP
Figure 4-2 TLE4966V - Output Voltage Signal over applied magnetic Field
Data Sheet
19
Revision 1.0, 2018-12-06
TLE4966V-1G
Timing Diagrams for the Speed and Direction Output
N
S
S
N
N
S
S
N
N
S
Rotation
Direction
S
N
N
S
S
N
Branded Side of
IC
Figure 4-3 TLE4966V - Definition of the direction signal
Table 4-1 Output Pin Q1 Direction Signals
Rotation direction
Counterclockwise
Clockwise
State of direction output Q1
Low
High
Data Sheet
20
Revision 1.0, 2018-12-06
TLE4966V-1G
Package Information
5
Package Information
Figure 5-1 Image of TLE4966V in the PG-TSOP6-6-9 package
Figure 5-2 PG-TSOP6-6-9 Package Outline (All dimensions in mm)
Data Sheet
21
Revision 1.0, 2018-12-06
TLE4966V-1G
Package Information
Figure 5-3 PG-TSOP6-6-9 Packing (All dimensions in mm)
0.5
0.95
Figure 5-4 Footprint of PG-TSOP6-6-9
Data Sheet
22
Revision 1.0, 2018-12-06
TLE4966V-1G
Package Information
Branded Side
± 0.1
± 0.1
d1 = 0.59
d2 = 0.45
mm
mm
Figure 5-5 Distance between chip and package
S
VG
Figure 5-6 Marking of TLE4966V
Data Sheet
23
Revision 1.0, 2018-12-06
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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