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BF1009SR [INFINEON]

Silicon N-Channel MOSFET Tetrode; 硅N沟道MOSFET四极管

BF1009SR


元器件型号：	BF1009SR
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极管晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
PDF文件：	总5页 (文件大小：253K)
下载文档：	下载PDF数据表文档文件
型号参数：BF1009SR参数

BF1009SR-E6327

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SRE6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143R, 4 PIN

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2 INFINEON

BF1009SR-E6433

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SW

TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R

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42 ETC

BF100V

SSR CONTROL MODULE 0-10V

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12 ETC

BF10-10

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF1012

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

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218 INFINEON

BF1012S

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

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284 INFINEON

BF1012W

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

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56 INFINEON

BF10-6

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF10-8

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF1100

Dual-gate MOS-FETs

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74 PHILIPS

BF1100

Dual-gate MOS-FETs

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52 PHILIPS

BF1100/R

Dual-Gate MOS-FETs

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8 ETC

BF1100/WR

Dual-Gate MOS-FETs

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24 ETC

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