IN74HC164D

更新时间:2024-09-18 06:48:23
品牌:INTEGRAL
描述:8-Bit Serial-Input/Parallel-Output Shift Register, High-Performance Silicon-Gate CMOS

IN74HC164D 概述

8-Bit Serial-Input/Parallel-Output Shift Register, High-Performance Silicon-Gate CMOS 8位串行输入/并行输出移位寄存器,高性能硅栅CMOS

IN74HC164D 数据手册

通过下载IN74HC164D数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
TECHNICAL DATA  
IN74HC164  
8-Bit Serial-Input/Parallel-Output  
Shift Register  
High-Performance Silicon-Gate CMOS  
The IN74HC164 is identical in pinout to the LS/ALS164. The  
device inputs are compatible with standard CMOS outputs; with pullup  
resistors, they are compatible with LS/ALSTTL outputs.  
The IN74HC164 is an 8-bit, serial-input to parallel-output shift  
register. Two serial data inputs, A1 and A2, are provided so that one  
input may be used as a data enable. Data is entered on each rising edge  
of the clock. The active-low asynchronous Reset overrides theClock  
and Serial Data inputs.  
ORDERING INFORMATION  
IN74HC164N Plastic  
IN74HC164D SOIC  
TA = -55° to 125° C for all packages  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
Low Input Current: 1.0 µA  
High Noise Immunity Characteristic of CMOS Devices  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
FUNCTION TABLE  
Inputs  
Clock  
X
Outputs  
Reset  
L
A1 A2  
X X  
X X  
H D  
D H  
QA QB ... QH  
L
L
... L  
H
no change  
PIN 14 =VCC  
PIN 7 = GND  
H
D QAn ... QGn  
D QAn ... QGn  
H
D = data input  
X = don’t care  
Q
An - QGn = data shifted from the previous stage on a  
rising edge at the clock input.  
223  
IN74HC164  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +7.0  
-1.5 to VCC +1.5  
-0.5 to VCC +0.5  
±20  
Unit  
V
VCC  
VIN  
VOUT  
IIN  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
V
mA  
mA  
mA  
mW  
IOUT  
ICC  
DC Output Current, per Pin  
±25  
DC Supply Current, VCC and GND Pins  
±50  
PD  
Power Dissipation in Still Air, Plastic DIP+  
SOIC Package+  
750  
500  
Tstg  
TL  
Storage Temperature  
-65 to +150  
260  
°C  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
Min  
2.0  
0
Max  
6.0  
Unit  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
VIN, VOUT  
TA  
VCC  
+125  
V
-55  
°C  
ns  
tr, tf  
Input Rise and Fall Time (Figure 1)  
VCC =2.0 V  
0
0
0
1000  
500  
400  
V
V
CC =4.5 V  
CC =6.0 V  
This device contains protection circuitry to guard against damage due to high static voltages or electric  
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated  
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range  
GND(VIN or VOUT)VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).  
Unused outputs must be left open.  
224  
IN74HC164  
DC ELECTRICAL CHARACTERISTICS  
(Voltages Referenced to GND)  
VCC  
V
Guaranteed Limit  
Symbol  
VIH  
Parameter  
Test Conditions  
Unit  
V
25 °C  
to  
85  
°C  
125  
°C  
-55°C  
Minimum High-Level VOUT=0.1 V or VCC-0.1 V  
Input Voltage  
2.0  
4.5  
6.0  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
IOUT 20 µA  
VIL  
Maximum Low -  
Level Input Voltage  
VOUT=0.1 V or VCC-0.1 V  
IOUT 20 µA  
2.0  
4.5  
6.0  
0.3  
0.9  
1.2  
0.3  
0.9  
1.2  
0.3  
0.9  
1.2  
V
VOH  
Minimum High-Level VIN= VIH or VIL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
V
Output Voltage  
IOUT 20 µA  
VIN= VIH or VIL  
IOUT 4.0 mA  
IOUT 5.2 mA  
4.5  
6.0  
3.98  
5.48  
3.84  
5.34  
3.7  
5.2  
VOL  
Maximum Low-Level VIN=VIH or VIL  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
Output Voltage  
IOUT 20 µA  
VIN=VIH or VIL  
IOUT 4.0 mA  
IOUT 5.2 mA  
4.5  
6.0  
0.26  
0.26  
0.33  
0.33  
0.4  
0.4  
IIN  
Maximum Input  
Leakage Current  
VIN=VCC or GND  
6.0  
±0.1  
±1.0  
±1.0  
µA  
µA  
ICC  
Maximum Quiescent  
Supply Current  
(per Package)  
VIN=VCC or GND  
IOUT=0µA  
6.0  
8.0  
80  
160  
225  
IN74HC164  
AC ELECTRICAL CHARACTERISTICS  
(CL=50pF,Input tr=tf=6.0 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
fmax  
Parameter  
Unit  
MHz  
ns  
25 °C  
to  
85°C 125°C  
-55°C  
Maximum Clock Frequency (50% Duty Cycle)  
(Figures 1 and 4)  
2.0  
4.5  
6.0  
6.0  
30  
35  
4.8  
24  
28  
4.0  
20  
24  
tPLH, tPHL Maximum Propagation Delay,Clock to Q (Figures 2.0  
175  
35  
220  
44  
265  
53  
1 and 4)  
4.5  
6.0  
30  
37  
45  
tPHL  
Maximum Propagation Delay,Reset to Q (Figures  
2 and 4)  
2.0  
4.5  
6.0  
205  
41  
35  
255  
51  
43  
310  
62  
53  
ns  
tTLH, tTHL Maximum Output Transition Time, Any Output  
(Figures 1 and 4)  
2.0  
4.5  
6.0  
75  
15  
13  
95  
19  
16  
110  
22  
19  
ns  
CIN  
Maximum Input Capacitance  
-
10  
10  
10  
pF  
Power Dissipation Capacitance (Per Package)  
Typical @25°C,VCC=5.0 V  
CPD  
Used to determine the no-load dynamic power  
consumption:  
140  
pF  
PD=CPDVCC2f+ICCVCC  
TIMING REQUIREMENTS (CL=50pF,Input tr=tf=6.0 ns)  
VCC  
Guaranteed Limit  
Symbol  
tSU  
Parameter  
V
Unit  
25 °C to  
-55°C  
85°C  
125°C  
Minimum Setup Time,A1 or  
A2 to Clock (Figure 3)  
2.0  
4.5  
6.0  
50  
10  
9
65  
13  
11  
75  
15  
13  
ns  
ns  
ns  
ns  
ns  
ns  
th  
trec  
tw  
Minimum Hold Time, Clock  
to A1 or A2 (Figure 3)  
2.0  
4.5  
6.0  
5
5
5
5
5
5
5
5
5
Minimum Recovery Time,  
Reset Inactive to Clock  
(Figure 2)  
2.0  
4.5  
6.0  
5
5
5
5
5
5
5
5
5
Minimum Pulse Width, Reset  
(Figure 2)  
2.0  
4.5  
6.0  
80  
16  
14  
100  
20  
17  
120  
24  
20  
tw  
Minimum Pulse Width, Clock  
(Figure 1)  
2.0  
4.5  
6.0  
80  
16  
14  
100  
20  
17  
120  
24  
20  
tr, tf  
Maximum Input Rise and Fall  
Times (Figure 1)  
2.0  
4.5  
6.0  
1000  
500  
400  
1000  
500  
400  
1000  
500  
400  
226  
IN74HC164  
Figure 1. Switching Waveforms  
Figure 2. Switching Waveforms  
Figure 3. Switching Waveforms  
Figure 4. Test Circuit  
TIMING DIAGRAM  
EXPANDED LOGIC DIAGRAM  
227  

IN74HC164D 相关器件

型号 制造商 描述 价格 文档
IN74HC164N INTEGRAL 8-Bit Serial-Input/Parallel-Output Shift Register, High-Performance Silicon-Gate CMOS 获取价格
IN74HC165 INTEGRAL 8-Bit Serial or Parallel-Input/Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC165A IKSEMICON 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC165AD IKSEMICON 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC165AN IKSEMICON 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC165D INTEGRAL Logic Circuit 获取价格
IN74HC165N INTEGRAL Logic Circuit 获取价格
IN74HC166 INTEGRAL 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC166A IKSEMICON 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格
IN74HC166AD IKSEMICON 8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS 获取价格

IN74HC164D 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6