KT3107A [INTEGRAL]
DISCRETE SEMICONDUCTOR Transistors; 分立半导体晶体管型号: | KT3107A |
厂家: | INTEGRAL CORP. |
描述: | DISCRETE SEMICONDUCTOR Transistors |
文件: | 总8页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTOR
Transistors
• Bipolar Transistors (continued)
РC
VCB
VCE
VEB
IC
VCE
sat,
V
ICBO,
Pin to Pin
Compatibility
FT,
Nf, Package
Part
Polarity max, max, max, max, max,
hFE
МHz dB
(Pads)
μА
W
V
V
V
mА
KT6136A
KT6137A
2N3906
2N3904
BC182
BC182A
BC182B
BC183
BC183A
BC183B
BC183C
2N4073
PNP
NPN
NPN
0.625 40
0.625 60
40
40
50
5
6
6
200 100…300 0.4 0.05
250
300
TO-92
TO-92
TO-92
100…300
200
100
0.3 0.05
0.6 0.015 150
120…450
120…220
200…450
0.5
60
10
10
110…800
110…220
200…450
420…800
NPN
NPN
0.5
45
30
6
4
100
150
0.6 0.015 150
TO-92
TO-92
КТ607А-4
КТ607Б-4
1.5
40
30
40
35
30
35
80
0.1
1000 700
BC639
BC640
2SC495
2CS496
NPN
PNP
NPN
0.625 100
0.625 100
5
5
4
1500
1500
0.5
0.5
0.1
0.1
100
100
250
TO-92
TO-92
TO-126
≥25
≥25
80
КТ646А
КТ646Б
КТ646В
KT660A
KT660Б
1.0
0.5
30
60
40
40
50
30
60
40
40
45
30
1000 40…200 0.85
10
10
>150
0.25
150…340
0.25 0.05
BC337
BC338
NPN
NPN
5
5
800 110…220 0.5
200…450
1.0
200
TO-92
TO-92
VKER
КТ805АМ
КТ805БМ
КТ805ВМ
КТ805ИМ
KT814A
KT814Б
KT814B
KT814Г
KT815A
KT815Б
KT815B
KT815Г
KT816A
KT816Б
KT816B
KT816Г
KT817A
KT817Б
KT817B
KT817Г
КТ8126А1
КТ8126Б1
КТ8164А
КТ8164Б
КТ8170А1
КТ8170Б1
КТ8176А
КТ8176Б
КТ8176В
KSD362
KSD773
300
45
30
5000
>15
>15
>15
>25
1.0
2.5
3.0
PNP
NPN
PNP
NPN
10
10
25
25
40
50
70
100
40
50
70
100
40
45
60
100
40
45
60
100
5
5
5
5
1500 40…275 0.6
40…275
40…275
30…275
1500 40…275 0.6
40…275
50
50
40
40
TO-126
TO-126
TO-126
TO-126
BD136
BD138
BD140
BD135
BD137
BD139
40…275
30…275
3000 25…275 0.6
100
100
3.0
3.0
4.0
BD234
BD236
BD238
3000 25…275 0.6
BD233
BD235
BD237
MJE13007
MJE13006
MJE13005
MJE13004
MJE13003
MJE13002
TIP31A
NPN
NPN
NPN
NPN
80
75
40
40
700 400
600 300
700 400
600 300
700 400
600 300
9
9
8000
4000
1500
3000
8…60
8…40
8…40
>25
1.0 1000
1.0 1000
1.0 1000
1.2
TO-220
TO-220
TO-126
TO-220
9
9
5
4.0
3.0
60
80
60
80
TIP31B
TIP31C
100 100
70
DISCRETE SEMICONDUCTOR
Transistors
• Bipolar Transistors (continued)
РC
VCB
VCE
VEB
IC
VCE
sat,
V
ICBO,
μА
Pin to Pin
FT,
Nf, Package
Part
Polarity max, max, max, max, max,
hFE
Compatibility
МHz dB
(Pads)
W
V
V
V
mА
КТ8177А
КТ8177Б
КТ8177В
КТ8212А
КТ8212Б
КТ8212В
КТ8213А
КТ8213Б
КТ8213В
TIP32A
TIP32B
TIP32C
TIP41С
TIP41B
TIP41A
TIP42C
TIP42B
PNP
NPN
PNP
40
60
80
60
80
5
3000
>25
1.2
3.0
TO-220
100 100
60
80
100 100
60
80
ICES=400
ICES=400
65
65
60
80
5
5
6000
6000
15…75 1.5
15…75 1.5
3.0
3.0
TO-220
TO-220
60
80
TIP42A
100 100
MJE2955
MJE3055
TIP3055
TIP2955
MJE4343
MJE4353
BU2508A
BU2508D
BU941ZP
PNP
NPN
NPN
PNP
NPN
PNP
NPN
75
75
90
70
70
70
60
60
60
5
5
5
10000 20…100 1.1 1000
10000 20…100 1.1 1000
15000 20…100 1.1 1000
TO-220
TO-220
TO-218
КТ738А
КТ739А
КТ732А
КТ733А
КТ8224А
КТ8224Б*
КТ8225A
125 160 160
100 1500 700
7
7.5
5
16000
8000
8…15
4…7
2.0
750
1.0
TO-218
TO-218
TO-218
TO-218
1.0 Iebo=1.0
100..187
Veb=5.0V
Iebo=20
NPN
NPN
155
350
15000
>300
1.8
КТ8228А
КТ8228Б*
КТ8229А
КТ8230А
КТ8261А
BU2525A
BU2525D
TIP35F
125 1500 800
7.5 12000 5.0…9.5 5.0 Iebo=1.0
80…150
NPN
PNP
NPN
NPN
NPN
NPN
125 180 180
125 180 180
25
40
75
5
5
9
9
12
7.5
25000 15…75 1.8 Iceo=1.0 3.0
TO-218
TO-218
TO-126
TO-220
TO-220
TO-218
TIP36F
25000 15…75 1.8
1.0
3.0
BUD44D2
BUL44D2
BUL45D2
BU2506F
700 400
700 400
700 400
2000
5000
5000
>10
>10
>22
0.65 0.1
0.65 0.1
КТ8247А
КТ8248А
0.5
100
90 Vcek 700
1500
5000 3.8…9.0 3.0 Icek,
mA
1.0
KT538A
MJE13001
BU2506F
NPN
0.7
600 400
Ucek
9
0.5
5…90
0.5 1000
4
4
TO-92
Icek,мА
TO-218
КТ8248А1
KT8290A
КТ8255А
KT8270A
KT8296A
KT8296Б
KT8296В
KT8296Г
KT8297A
KT8297Б
KT8297В
KT8297Г
KT872A
NPN
NPN
NPN
NPN
NPN
90 1500 700
100 700 400
60
0.7
10
7.5
9
6
9
5
5000 3.8…9.0 3.0
1.0
0.1
1.0
BUH100
BU407
10000
7000
0.5
3000 60…120 0.5
100…200
>10
>15
5…90
1.0
1.0
ТО-220
ТО-220
TO-126
330 160
600 400
MJE13001
KSD882R
KSD882O
KSD882Y
KSD882G
KSB772R
KSB772O
KSB772Y
KSB772G
BU508А
0.5 1000
40
30
100
TO-126
TO-126
160…320
200…400
PNP
NPN
10
40
30
5
6
3000 60…120 0.5
100…200
100
160…320
200…400
100 1500 700
1500 700
1000
1.0
5.0
1.0
1.0
4.0
KT872Б
KT872B
KT872Г*
with clamping
diode
BU508
1200 600
1500 700
>6
TO-218
BU508D
KT928A
KT928Б
KT928B
KT940A
KT940Б
KT940B
КТ969А
2N2218
2N2219
2N2219A
BF459
NPN
NPN
NPN
0.5
0.5
0.5
60
60
75
60
60
75
5
5
5
0.8
0.8
20…100 1.0
50…200 1.0
5.0
5.0
1.0
250
250
250
TO-126
TO-126
TO-126
0.8 100…300 1.0
300 300
250 250
160 160
300 250
BF458
NPN
NPN
10
6
5
5
100
100
>25
1.0 0.05
TO-126
TO-126
BF469
50…250 1.0 0.05
60
71
DISCRETE SEMICONDUCTOR
Transistors
• Power Bipolar Darlington Transistors
РC
max,
W
VCB
max,
V
VCE
max,
V
VEB
max,
V
IC
max,
mА
VCE
sat,
V
ICBO,
μА
Pin to Pin
Packa-
ge
FT,
МHz
Part
Polarity
hFE
Compatibility
KT8115A
KT8115Б
KT8115B
KT8116A
KT8116Б
KT8116B
КТ8214А
КТ8214Б
КТ8214В
КТ8215А
КТ8215Б
КТ8215В
KT8156A
КТ8156Б
KT8158A
KT8158Б
KT8158B
KT8159A
KT8159Б
KT8159В
КТ8225А
КТ8251А
KT972A
TIP127
TIP126
TIP125
TIP122
TIP121
TIP120
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
BU807
PNP
65
100
80
60
100
80
60
60
80
100
60
100
80
60
100
80
60
60
80
100
60
5
5000
>1000
2.0 200
2.0 200
2.5 1000
2.5 1000
4
4
TO-220
TO-220
TO-220
TO-220
NPN
NPN
PNP
65
50
50
5
5
5
5000
2000
2000
>1000
>500
>500
80
100
330
80
100
150
200
60
80
100
60
80
100
350
180
60
NPN
NPN
60
6
5
8000
>100
1.5 1000
2.0 400
TO-220
TO-218
BDV65A
BDV65B
BDV65C
BDV64A
BDV64B
BDV64C
BU941ZP
BDV65F
BD875
125
60
80
100
60
80
100
350
180
60
12000
>1000
PNP
125
5
12000
>1000
2.0 400
TO-218
NPN
NPN
NPN
155
125
8.0
5
5
5
15000
10000
2000
>300
>100
>750
>750
2.7 100
2.0 0.4
1.5
TO-218
TO-218
200 TO-126
KT972Б
45
45
1.5
KT972B
KT972Г
60
60
60
60
750…5000 1.5
750…5000 0.95
KT973A
KT973Б
BD876
PNP
8.0
60
45
60
45
5
2000
>750
>750
1.5
1.5
200 TO-126
KT973B
60
60
750…5000 1.5
• Unijunction Transistors
Ie rev,
μA
12.0
0.2
Pin to Pin
Compatibility
2N2646
P max, Vb, b2 max,
Ie pulse,
Veb sat,
Part
Package
η
W
V
A
2.0
V
3.5
KT132A
0.3
35
Case 22A-01
0.56…0.75
0.68…0.82
0.56…0.75
0.70…0.85
KT132Б
2N2647
KT133A
KT133Б
2N4870
2N4871
0.3
35
1.5
1.0
2.5
TO-92
• Logic Level N-Channel MOSFETs
Pin to Pin
Compatibility
IRLZ44
Vds max,
V
Rds (on)
Ohm
0.028
0.05
Id max,
A
Vgs max,
P max,
W
150
88
60
88
150
50
50
Vgs (th),
V
Part
Package
V
КП723Г
КП727В
КП744Г
КП745Г
КП746Г
КП737Г
КП750Г
60
60
50
30
9.2
15
28
1.0…2.0
1.0…2.0
1.0…2.0
1.0…2.0
1.0…2.0
1.0…2.0
1.0…2.0
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
±10
±10
±10
±10
±10
±10
±10
±20
IRLZ34
IRL520
IRL530
IRL540
IRL630
IRL640
100
100
100
200
200
0.27
0.22
0.077
0.4
0.18
18
18
КП775А
КП775Б
КП775В
2SK2498А-В
60
55
60
0.009
0.009
0.011
50
150
1.0…2.0
1.0…2.0
1.0…2.0
72
DISCRETE SEMICONDUCTOR
Transistors
• Low Power MOSFETs
Pin to Pin
Compatibility
ZVN2120
P max, Vgs max,
Vds max, Vgs(off),
Rds(on),
Ohm
10
Id max,
g fs,
A/V
>0.1
Part
Package
W
V
V
V
A
10
КП501А
КП501Б
КП501В
КП502А
0.5
240
200
200
400
1.0…3.0
1.0…3.0
TO-92
±20
10
15
28
28
8
8
8
10
8
8
0.3
0.3
0.3
1.2
0.8
20
16
8
BSS124
BSS129
BSS88
1.0
1.0
1.5…2.5
1.5…2.5
0.6…1.2
0.12
0.12
0.32
0.1
0.1
0.14
TO-92
TO-92
TO-92
±10
±10
±10
КП503А
400
КП504А
КП504Б
КП504В
КП504Г
КП504Д
КП504Е
КП505А
КП505Б
КП505В
КП505Г
КП507A
1.0
1.0
0.7
0.7
0.7
0.7
1.0
1.0
1.0
0.7
1.0
250
250
200
180
200
200
50
50
60
8
-50
BSS295
0.8…2.0
0.8…2.0
0.8…2.0
0.4…0.8
-0.8…-2.0
1.4
0.5
0.5
0.5
TO-92
±10
BSS315
BSS92
BSS131
-1.1
-0.15
0.1
0.25
0.1
1.2
0.14
TO-92
TO-92
SOT-23
±20
±20
±14
КП508A
1.0
-240
-0.8…-2.0
КП509А9
КП509Б9
КП509В9
КП510A9
КП511A
КП511Б
КП523А
КП523Б
0.36
0.50
0.36
0.54
240
240
200
20
0.8…-2.0
0.6…-1.2
0.8…-2.0
0.7…-1.6
0.06
0.14
0.06
1.3
16
0.25
22
IRML2402
SOT-23
TO-92
±12
±20
TN0535
TN0540
BSS297
0.75
350
400
200
200
0.8…-2.0
0.125
1.0
1.0
0.8…2.0
0.8…2.0
2.0
4.0
0.48
0.34
0.5
0.5
TO-92
±20
±14
±40
КП214А9
2N7002LT1
0.2
60
1.0…2.5
7.5
0.115
0.08
SOT-23
• Power N-Channel MOSFETs
Pin to Pin
Compatibility
IRFZ44
Vds max,
Rds (on),
Ohm
0.028
0.035
0.028
2.0
Id max,
Vgs max,
P max,
W
150
Vgs (th),
V
2.0…4.0
Part
Package
V
A
V
±20
КП723А
КП723Б
КП723В
КП726А
КП726Б
КП727А
КП727Б
60
60
50
600
50
50
50
4.0
4.5
14
30
3.0
TO-220
IRFZ45
IRFZ40
BUZ90A
BUZ90
BUZ71
75
75
75
2.0…4.0
2.0…4.0
2.0…4.0
TO-220
TO-220
TO-220
±20
±20
±20
1.6
0.1
0.05
50
60
IRFZ34
КП728Г1,Г2 BUZ80A
КП728С1,С2
КП728Е1,Е2
700
650
600
60
50
60
60
50
60
60
5.0
4.0
3.0
0.2
0.2
0.3
0.1
0.1
0.12
0.018
0.024
0.014
0.012
КП739А
КП739Б
КП739В
КП740А
КП740Б
КП740В
КП741А
КП741Б
КП742А
КП742Б
IRFZ14
IRFZ10
IRFZ15
IRFZ24
IRFZ20
IRFZ25
IRFZ48
IRFZ46
STH75N06
STH80N05
10
10
8.3
17
17
14
50
43
60
2.0…4.0
2.0…4.0
TO-220
TO-220
±20
±20
190
150
200
2.0…4.0
2.0…4.0
TO-220
TO-218
±20
±20
50
60
50
75
80
73
DISCRETE SEMICONDUCTOR
Transistors
• Power N-Channel MOSFETs (continued)
Pin to Pin
Compatibility
IRF510
Vds max,
V
Rds (on),
Ohm
0.54
Id max,
A
Vgs max,
P max,
W
43
Vgs (th),
V
2.0…4.0
Part
Package
V
± 20
КП743А
КП743Б
КП743В
КП743А1
100
80
100
100
5.6
5.6
4.9
5.5
TO-220
TO-126
IRF511
IRF512
0.54
0.74
0.54
40
60
2.0…4.0
2.0…4.0
TO-126
TO-220
±20
±20
КП744А
КП744Б
КП744В
КП745А
КП745Б
КП745В
КП746А
КП746Б
КП746В
КП747А
IRF520
IRF521
IRF522
IRF530
IRF531
IRF532
IRF540
IRF541
IRF542
IRFP150
100
80
100
100
80
100
100
80
0.27
0.27
0.36
0.16
0.16
0.23
0.077
0.077
0.1
9.2
9.2
8.0
14.0
14.0
12.0
28.0
28.0
25.0
41.0
88
2.0…4.0
2.0…4.0
TO-220
TO-220
±20
±20
150
100
100
0.055
230
36
2.0…4.0
2.0…4.0
TO-218
TO-220
±20
±20
КП748А
КП748Б
КП748В
КП749А
КП749Б
КП749В
КП737А
КП737Б
КП737В
КП750А
КП750Б
КП750В
КП731А
КП731Б
КП731В
КП751А
КП751Б
КП751В
КП752А
КП752Б
IRF610
IRF611
IRF612
IRF620
IRF621
IRF622
IRF630
IRF634
IRF635
IRF640
IRF641
IRF642
IRF710
IRF711
IRF712
IRF720
IRF721
IRF722
IRF730
IRF731
IRF732
200
150
200
200
150
200
200
250
200
200
150
200
400
350
400
400
350
400
400
350
400
1.5
1.5
2.4
0.8
0.8
1.2
0.4
0.45
0.68
0.18
0.18
0.22
3.6
3.6
5.0
1.8
1.8
2.5
1.0
1.0
1.5
3.3
3.3
2.6
5.2
5.2
4.0
9.0
8.1
6.5
18.0
18.0
16.0
2.0
2.0
1.7
3.3
3.3
2.8
5.5
5.5
4.5
50
74
2.0…4.0
2.0…4.0
2.0…4.0
2.0…4.0
2.0…4.0
2.0…4.0
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
±20
±20
±20
±20
±20
±20
125
36
50
74
КП752В
Pilot Production
КП753А
КП753Б
КП753В
Pilot Production
IRF830
IRF831
IRF832
500
450
500
1.5
1.5
2.0
4.5
4.5
4.0
74
2.0…4.0
TO-220
±20
КП771А
STP40N10
100
0.04
40
150
125
2.0…4.0
2.0…4.0
TO-220
TO-220
±20
±20
КП776А
КП776Б
КП776В
КП776Г
Pilot Production
IRF740
IRF741
IRF742
IRF744
400
350
400
450
0.55
0.55
0.8
10.0
10.0
8.3
0.63
8.8
74
DISCRETE SEMICONDUCTOR
Transistors
• Power N-Channel MOSFETs (continued)
Pin to Pin
Compatibility
IRF840
Vds max,
V
Rds (on),
Ohm
0.85
Id max,
A
Vgs max,
P max,
W
125
Vgs (th),
V
2.0…4.0
Part
Package
V
±20
КП777А
КП777Б
500
450
8.0
8.0
TO-220
IRF841
0.85
КП777В
Pilot Production
IRF842
500
1.1
7.0
КП778А
КП779А
Pilot Production
IRFP250
IRFP450
200
500
0.085
0.4
30.0
14.0
190
190
2.0…4.0
2.0…4.0
TO-220
TO-220
±20
±20
КП780А
КП780Б
КП780В
КП781А
Pilot Production
IRF820
IRF821
IRF822
IRFP350
500
450
500
400
3.0
3.0
4.0
0.3
2.5
2.5
2.2
50
2.0…4.0
TO-220
±20
16.0
190
200
100
150
250
2.0…4.0
2.0…4.0
2.0…4.0
2.0…4.0
2.1…4.0
TO-220
TO-220
TO-220
TO-220
TO-220
±20
±20
±20
±20
±20
КП783А
Pilot Production
IRF3205
55
800
600
320
0.008
3.0
70.0
4.0
КП786А Pilot BUZ80A
Production
КП787А Pilot BUZ91A
Production
0.9
8.0
КП789А
Pilot Production
BUZ111S
0.008
80.0
• Power P-Channel MOSFETs
Pin to Pin
Compatibility
IRF9Z34
Vds max,
V
Rds (on),
Ohm
0.14
Id max,
A
-18.0
-19.0
-4.3
Vgs max,
V
P max,
W
88
150
74
Vgs (th),
V
-2.0…-4.0
-2.0…-4.0
-2.0…-4.0
Part
Package
КП784A
КП785A
-60
-100
-250
TO-220
TO-220
TO-220
±20
±20
±20
IRF9540
0.20
КП796А
Under
IRF9634
1.0
Development
75
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