EPM570GF100A3N_技术文档

Section I. MAX II Device Family Data

Sheet

®

This section provides designers with the data sheet specifications for MAX II devices.

The chapters contain feature definitions of the internal architecture, Joint Test Action

Group (JTAG) and in-system programmability (ISP) information, DC operating

conditions, AC timing parameters, and ordering information for MAX II devices.

This section includes the following chapters:

■

Chapter 1, Introduction

Chapter 2, MAX II Architecture

Chapter 3, JTAG and In-System Programmability

Chapter 4, Hot Socketing and Power-On Reset in MAX II Devices

Chapter 5, DC and Switching Characteristics

Chapter 6, Reference and Ordering Information

Revision History

Refer to each chapter for its own specific revision history. For information about when

each chapter was updated, refer to the Chapter Revision Dates section, which appears

in the complete handbook.

MAX II Device Handbook

I–2

Section I: MAX II Device Family Data Sheet

Revision History

MAX II Device Handbook

1. Introduction

MII51001-1.8

Introduction

®

The MAX II family of instant-on, non-volatile CPLDs is based on a 0.18-µm, 6-layer-

metal-flash process, with densities from 240 to 2,210 logic elements (LEs) (128 to 2,210

equivalent macrocells) and non-volatile storage of 8 Kbits. MAX II devices offer high

I/O counts, fast performance, and reliable fitting versus other CPLD architectures.

Featuring MultiVolt core, a user flash memory (UFM) block, and enhanced in-system

programmability (ISP), MAX II devices are designed to reduce cost and power while

providing programmable solutions for applications such as bus bridging, I/O

expansion, power-on reset (POR) and sequencing control, and device configuration

control.

Features

The MAX II CPLD has the following features:

■

Low-cost, low-power CPLD

Instant-on, non-volatile architecture

Standby current as low as 29 µA

Provides fast propagation delay and clock-to-output times

Provides four global clocks with two clocks available per logic array block (LAB)

UFM block up to 8 Kbits for non-volatile storage

MultiVolt core enabling external supply voltages to the device of either 3.3 V/2.5 V

or 1.8 V

■

MultiVolt I/O interface supporting 3.3-V, 2.5-V, 1.8-V, and 1.5-V logic levels

Bus-friendly architecture including programmable slew rate, drive strength, bus-

hold, and programmable pull-up resistors

■

Schmitt triggers enabling noise tolerant inputs (programmable per pin)

I/Os are fully compliant with the Peripheral Component Interconnect Special

Interest Group (PCI SIG) PCI Local Bus Specification, Revision 2.2 for 3.3-V

operation at 66 MHz

■

Supports hot-socketing

Built-in Joint Test Action Group (JTAG) boundary-scan test (BST) circuitry

compliant with IEEE Std. 1149.1-1990

■

ISP circuitry compliant with IEEE Std. 1532

MAX II Device Handbook

1–2

Chapter 1: Introduction

Features

Table 1–1 shows the MAX II family features.

Table 1–1. MAX II Family Features

EPM240

EPM570

EPM1270

EPM2210

Feature

LEs

EPM240G

EPM570G

EPM1270G

EPM2210G

EPM240Z

EPM570Z

570

240

192

570

440

1,270

980

2,210

1,700

240

192

Typical Equivalent Macrocells

Equivalent Macrocell Range

UFM Size (bits)

440

128 to 240 240 to 570 570 to 1,270 1,270 to 2,210

128 to 240

8,192

80

240 to 570

8,192

160

8,192

80

8,192

160

5.4

8,192

212

6.2

8,192

272

7.0

Maximum User I/O pins

t_PD1(ns) (1)

4.7

7.5

9.0

f_CNT(MHz) (2)

304

1.7

304

1.2

304

1.2

304

1.2

152

t_SU(ns)

_CO(ns)

2.3

2.2

t

4.3

4.5

4.6

6.5

6.7

Notes to Table 1–1:

(1) t_PD1represents a pin-to-pin delay for the worst case I/O placement with a full diagonal path across the device and combinational logic

implemented in a single LUT and LAB that is adjacent to the output pin.

(2) The maximum frequency is limited by the I/O standard on the clock input pin. The 16-bit counter critical delay will run faster than this number.

f

For more information about equivalent macrocells, refer to the MAX II Logic Element to

Macrocell Conversion Methodology white paper.

MAX II and MAX IIG devices are available in three speed grades: –3, –4, and –5, with

–3 being the fastest. Similarly, MAX IIZ devices are available in two speed grades: –6,

–7, with –6 being faster. These speed grades represent the overall relative

performance, not any specific timing parameter. For propagation delay timing

numbers within each speed grade and density, refer to the DC and Switching

Characteristics chapter in the MAX II Device Handbook.

Table 1–2 shows MAX II device speed-grade offerings.

Table 1–2. MAX II Speed Grades

Speed Grade

Device

EPM240

–3

–4

–5

–6

–7

v

—

EPM240G

EPM570

v

—

EPM570G

EPM1270

EPM1270G

EPM2210

EPM2210G

EPM240Z

EPM570Z

—

v

MAX II Device Handbook

Chapter 1: Introduction

1–3

Features

MAX II devices are available in space-saving FineLine BGA, Micro FineLine BGA, and

thin quad flat pack (TQFP) packages (refer to Table 1–3 and 1–3). MAX II devices

support vertical migration within the same package (for example, you can migrate

between the EPM570, EPM1270, and EPM2210 devices in the 256-pin FineLine BGA

package). Vertical migration means that you can migrate to devices whose dedicated

pins and JTAG pins are the same and power pins are subsets or supersets for a given

package across device densities. The largest density in any package has the highest

number of power pins; you must lay out for the largest planned density in a package

to provide the necessary power pins for migration. For I/O pin migration across

densities, cross reference the available I/O pins using the device pin-outs for all

planned densities of a given package type to identify which I/O pins can be migrated.

®

The Quartus II software can automatically cross-reference and place all pins for you

when given a device migration list.

Table 1–3. MAX II Packages and User I/O Pins

68-Pin

Micro

100-Pin

Micro

144-Pin

Micro

256-Pin

Micro

100-Pin

256-Pin

324-Pin

FineLine FineLine FineLine 100-Pin 144-Pin FineLine

FineLine FineLine FineLine

Device

EPM240

BGA (1)

TQFP

BGA (1)

BGA

—

80

—

EPM240G

EPM570

—

76

—

76

—

76

—

116

—

160

212

—

160

212

204

—

EPM570G

EPM1270

EPM1270G

EPM2210

EPM2210G

EPM240Z

EPM570Z

Note to Table 1–3:

272

54

—

80

76

—

116

160

(1) Packages available in lead-free versions only.

Table 1–4. MAX II TQFP, FineLine BGA, and Micro FineLine BGA Package Sizes

68-Pin

Micro

100-Pin

Micro

144-Pin

Micro

256-Pin

Micro

100-Pin

256-Pin

324-Pin

FineLine FineLine FineLine 100-Pin 144-Pin FineLine FineLine FineLine FineLine

Package

Pitch (mm)

Area (mm2)

BGA

TQFP

BGA

0.5

1

0.5

1

25

36

121

256

484

49

121

289

361

Length × width

(mm × mm)

5 × 5

6 × 6

11 × 11

16 × 16 22 × 22

7 × 7

11 × 11

17 × 17

19 × 19

MAX II Device Handbook

1–4

Chapter 1: Introduction

Referenced Documents

MAX II devices have an internal linear voltage regulator which supports external

supply voltages of 3.3 V or 2.5 V, regulating the supply down to the internal operating

voltage of 1.8 V. MAX IIG and MAX IIZ devices only accept 1.8 V as the external

supply voltage. MAX IIZ devices are pin-compatible with MAX IIG devices in the

100-pin Micro FineLine BGA and 256-pin Micro FineLine BGA packages. Except for

external supply voltage requirements, MAX II and MAX II G devices have identical

pin-outs and timing specifications. Table 1–5 shows the external supply voltages

supported by the MAX II family.

Table 1–5. MAX II External Supply Voltages

EPM240G

EPM570G

EPM240

EPM570

EPM1270

EPM2210

EPM1270G

EPM2210G

EPM240Z

Devices

EPM570Z (1)

MultiVolt core external supply voltage (V_CCINT) (2)

3.3 V, 2.5 V

1.8 V

MultiVolt I/O interface voltage levels (V_CCIO

)

1.5 V, 1.8 V, 2.5 V, 3.3 V

Notes to Table 1–5:

(1) MAX IIG and MAX IIZ devices only accept 1.8 V on their VCCINTpins. The 1.8-V V_CCINTexternal supply powers the device core directly.

(2) MAX II devices operate internally at 1.8 V.

Referenced Documents

This chapter references the following documents:

■

DC and Switching Characteristics chapter in the MAX II Device Handbook

MAX II Logic Element to Macrocell Conversion Methodology white paper

Document Revision History

Table 1–6 shows the revision history for this chapter.

Table 1–6. Document Revision History

Date and Revision Changes Made

Summary of Changes

October 2008,

version 1.8

■ Updated “Introduction” section.

—

■ Updated new Document Format.

December 2007,

version1.7

■ Updated Table 1–1 through Table 1–5.

■ Added “Referenced Documents” section.

■ Added document revision history.

Updated document with MAX IIZ information.

December 2006,

version 1.6

—

August 2006,

version 1.5

■ Minor update to features list.

■ Minor updates to tables.

July 2006,

version 1.4

MAX II Device Handbook

Chapter 1: Introduction

1–5

Document Revision History

Table 1–6. Document Revision History

Date and Revision Changes Made

Summary of Changes

June 2005,

version 1.3

■ Updated timing numbers in Table 1-1.

—

December 2004,

version 1.2

■ Updated timing numbers in Table 1-1.

June 2004,

version 1.1

MAX II Device Handbook

1–6

Chapter 1: Introduction

Document Revision History

MAX II Device Handbook

2. MAX II Architecture

MII51002-2.2

Introduction

This chapter describes the architecture of the MAX II device and contains the

following sections:

■

“Functional Description” on page 2–1

“Logic Array Blocks” on page 2–4

“Logic Elements” on page 2–6

“MultiTrack Interconnect” on page 2–12

“Global Signals” on page 2–16

“User Flash Memory Block” on page 2–18

“MultiVolt Core” on page 2–22

“I/O Structure” on page 2–23

Functional Description

®

MAX II devices contain a two-dimensional row- and column-based architecture to

implement custom logic. Row and column interconnects provide signal interconnects

between the logic array blocks (LABs).

The logic array consists of LABs, with 10 logic elements (LEs) in each LAB. An LE is a

small unit of logic providing efficient implementation of user logic functions. LABs

are grouped into rows and columns across the device. The MultiTrack interconnect

provides fast granular timing delays between LABs. The fast routing between LEs

provides minimum timing delay for added levels of logic versus globally routed

interconnect structures.

The MAX II device I/O pins are fed by I/O elements (IOE) located at the ends of LAB

rows and columns around the periphery of the device. Each IOE contains a

bidirectional I/O buffer with several advanced features. I/O pins support Schmitt

trigger inputs and various single-ended standards, such as 66-MHz, 32-bit PCI, and

LVTTL.

MAX II devices provide a global clock network. The global clock network consists of

four global clock lines that drive throughout the entire device, providing clocks for all

resources within the device. The global clock lines can also be used for control signals

such as clear, preset, or output enable.

MAX II Device Handbook

2–2

Chapter 2: MAX II Architecture

Functional Description

Figure 2–1 shows a functional block diagram of the MAX II device.

Figure 2–1. MAX II Device Block Diagram

IOE

Logic

Element

Logic

Element

Logic

Element

IOE

Logic

Element

Logic

Element

Logic

Element

IOE

Logic Array

BLock (LAB)

MultiTrack

Interconnect

Logic

Element

Logic

Element

Logic

Element

IOE

Logic

Element

Logic

Element

Logic

Element

IOE

MultiTrack

Interconnect

Each MAX II device contains a flash memory block within its floorplan. On the

EPM240 device, this block is located on the left side of the device. On the EPM570,

EPM1270, and EPM2210 devices, the flash memory block is located on the bottom-left

area of the device. The majority of this flash memory storage is partitioned as the

dedicated configuration flash memory (CFM) block. The CFM block provides the non-

volatile storage for all of the SRAM configuration information. The CFM

automatically downloads and configures the logic and I/O at power-up, providing

instant-on operation.

f

For more information about configuration upon power-up, refer to the Hot Socketing

and Power-On Reset in MAX II Devices chapter in the MAX II Device Handbook.

A portion of the flash memory within the MAX II device is partitioned into a small

block for user data. This user flash memory (UFM) block provides 8,192 bits of

general-purpose user storage. The UFM provides programmable port connections to

the logic array for reading and writing. There are three LAB rows adjacent to this

block, with column numbers varying by device.

Table 2–1 shows the number of LAB rows and columns in each device, as well as the

number of LAB rows and columns adjacent to the flash memory area in the EPM570,

EPM1270, and EPM2210 devices. The long LAB rows are full LAB rows that extend

from one side of row I/O blocks to the other. The short LAB rows are adjacent to the

UFM block; their length is shown as width in LAB columns.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–3

Functional Description

Table 2–1. MAX II Device Resources

LAB Rows

Short LAB Rows

Devices

EPM240

UFM Blocks

LAB Columns

Long LAB Rows

(Width) (1)

Total LABs

1

6

4

—

24

57

EPM570

12

16

20

3 (3)

EPM1270

7

3 (5)

127

221

EPM2210

10

3 (7)

Note to Table 2–1:

(1) The width is the number of LAB columns in length.

Figure 2–2 shows a floorplan of a MAX II device.

Figure 2–2. MAX II Device Floorplan (Note 1)

I/O Blocks

Logic Array

Blocks

Logic Array

Blocks

2 GCLK

Inputs

2 GCLK

Inputs

I/O Blocks

UFM Block

CFM Block

Note to Figure 2–2:

(1) The device shown is an EPM570 device. EPM1270 and EPM2210 devices have a similar floorplan with more LABs. For EPM240 devices, the CFM

and UFM blocks are located on the left side of the device.

MAX II Device Handbook

2–4

Chapter 2: MAX II Architecture

Logic Array Blocks

Each LAB consists of 10 LEs, LE carry chains, LAB control signals, a local interconnect,

a look-up table (LUT) chain, and register chain connection lines. There are 26 possible

unique inputs into an LAB, with an additional 10 local feedback input lines fed by LE

outputs in the same LAB. The local interconnect transfers signals between LEs in the

same LAB. LUT chain connections transfer the output of one LE’s LUT to the adjacent

LE for fast sequential LUT connections within the same LAB. Register chain

connections transfer the output of one LE’s register to the adjacent LE’s register

®

within an LAB. The Quartus II software places associated logic within an LAB or

adjacent LABs, allowing the use of local, LUT chain, and register chain connections

for performance and area efficiency. Figure 2–3 shows the MAX II LAB.

Figure 2–3. MAX II LAB Structure

Row Interconnect

Column Interconnect

LE0

LE1

LE2

LE3

Fast I/O connection

to IOE (1)

Fast I/O connection

to IOE (1)

DirectLink

interconnect from

adjacent LAB

or IOE

interconnect from

adjacent LAB

or IOE

LE4

LE5

LE6

LE7

DirectLink

interconnect to

adjacent LAB

or IOE

interconnect to

adjacent LAB

or IOE

LE8

LE9

Logic Element

LAB

Local Interconnect

Note to Figure 2–3:

(1) Only from LABs adjacent to IOEs.

LAB Interconnects

The LAB local interconnect can drive LEs within the same LAB. The LAB local

interconnect is driven by column and row interconnects and LE outputs within the

same LAB. Neighboring LABs, from the left and right, can also drive an LAB’s local

interconnect through the DirectLink connection. The DirectLink connection feature

minimizes the use of row and column interconnects, providing higher performance

and flexibility. Each LE can drive 30 other LEs through fast local and DirectLink

interconnects. Figure 2–4 shows the DirectLink connection.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–5

Logic Array Blocks

Figure 2–4. DirectLink Connection

DirectLink interconnect from

right LAB or IOE output

DirectLink interconnect from

left LAB or IOE output

LE0

LE1

LE2

LE3

LE4

LE5

LE6

LE7

LE8

LE9

DirectLink

interconnect

to right

DirectLink

interconnect

to left

Local

Interconnect

Logic Element

LAB

LAB Control Signals

Each LAB contains dedicated logic for driving control signals to its LEs. The control

signals include two clocks, two clock enables, two asynchronous clears, a

synchronous clear, an asynchronous preset/load, a synchronous load, and

add/subtract control signals, providing a maximum of 10 control signals at a time.

Although synchronous load and clear signals are generally used when implementing

counters, they can also be used with other functions.

Each LAB can use two clocks and two clock enable signals. Each LAB’s clock and

clock enable signals are linked. For example, any LE in a particular LAB using the

labclk1signal also uses labclkena1. If the LAB uses both the rising and falling

edges of a clock, it also uses both LAB-wide clock signals. Deasserting the clock

enable signal turns off the LAB-wide clock.

Each LAB can use two asynchronous clear signals and an asynchronous load/preset

signal. By default, the Quartus II software uses a NOTgate push-back technique to

achieve preset. If you disable the NOTgate push-back option or assign a given register

to power-up high using the Quartus II software, the preset is then achieved using the

asynchronous load signal with asynchronous load data input tied high.

With the LAB-wide addnsub control signal, a single LE can implement a one-bit adder

and subtractor. This saves LE resources and improves performance for logic functions

such as correlators and signed multipliers that alternate between addition and

subtraction depending on data.

The LAB column clocks [3..0], driven by the global clock network, and LAB local

interconnect generate the LAB-wide control signals. The MultiTrack interconnect

structure drives the LAB local interconnect for non-global control signal generation.

The MultiTrack interconnect’s inherent low skew allows clock and control signal

distribution in addition to data. Figure 2–5 shows the LAB control signal generation

circuit.

MAX II Device Handbook

2–6

Chapter 2: MAX II Architecture

Logic Elements

Figure 2–5. LAB-Wide Control Signals

Dedicated

4

LAB Column

Clocks

Local

Interconnect

Local

Interconnect

Local

Interconnect

Local

Interconnect

Local

Interconnect

labclkena2

labclkena1

syncload

labclr2

addnsub

Local

Interconnect

labclk1

labclk2

asyncload

or labpre

labclr1

synclr

Logic Elements

The smallest unit of logic in the MAX II architecture, the LE, is compact and provides

advanced features with efficient logic utilization. Each LE contains a four-input LUT,

which is a function generator that can implement any function of four variables. In

addition, each LE contains a programmable register and carry chain with carry-select

capability. A single LE also supports dynamic single-bit addition or subtraction mode

selectable by an LAB-wide control signal. Each LE drives all types of interconnects:

local, row, column, LUT chain, register chain, and DirectLink interconnects. See

Figure 2–6.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–7

Logic Elements

Figure 2–6. MAX II LE

Register chain

routing from

previous LE

LAB-wide

Synchronous

Register Bypass

LAB Carry-In

Carry-In1

Load

Programmable

Register

LAB-wide

Synchronous

Packed

Register Select

addnsub

Carry-In0

Clear

LUT chain

routing to next LE

data1

Row, column,

and DirectLink

routing

PRN/ALD

data2

data3

Synchronous

Load and

Clear Logic

Look-Up

Table

(LUT)

Carry

Chain

D

Q

ADATA

data4

ENA

CLRN

Row, column,

and DirectLink

routing

labclr1

labclr2

Asynchronous

Clear/Preset/

Load Logic

Local routing

labpre/aload

Chip-Wide

Reset (DEV_CLRn)

Register chain

output

Register

Feedback

Clock and

Clock Enable

Select

labclk1

labclk2

labclkena1

labclkena2

Carry-Out0

Carry-Out1

LAB Carry-Out

Each LE’s programmable register can be configured for D, T, JK, or SR operation. Each

register has data, true asynchronous load data, clock, clock enable, clear, and

asynchronous load/preset inputs. Global signals, general-purpose I/O pins, or any

LE can drive the register’s clock and clear control signals. Either general-purpose I/O

pins or LEs can drive the clock enable, preset, asynchronous load, and asynchronous

data. The asynchronous load data input comes from the data3 input of the LE. For

combinational functions, the LUT output bypasses the register and drives directly to

the LE outputs.

Each LE has three outputs that drive the local, row, and column routing resources. The

LUT or register output can drive these three outputs independently. Two LE outputs

drive column or row and DirectLink routing connections and one drives local

interconnect resources. This allows the LUT to drive one output while the register

drives another output. This register packing feature improves device utilization

because the device can use the register and the LUT for unrelated functions. Another

special packing mode allows the register output to feed back into the LUT of the same

LE so that the register is packed with its own fan-out LUT. This provides another

mechanism for improved fitting. The LE can also drive out registered and

unregistered versions of the LUT output.

MAX II Device Handbook

2–8

Chapter 2: MAX II Architecture

Logic Elements

LUT Chain and Register Chain

In addition to the three general routing outputs, the LEs within an LAB have LUT

chain and register chain outputs. LUT chain connections allow LUTs within the same

LAB to cascade together for wide input functions. Register chain outputs allow

registers within the same LAB to cascade together. The register chain output allows an

LAB to use LUTs for a single combinational function and the registers to be used for

an unrelated shift register implementation. These resources speed up connections

between LABs while saving local interconnect resources. Refer to “MultiTrack

Interconnect” on page 2–12 for more information about LUT chain and register chain

connections.

addnsub Signal

The LE’s dynamic adder/subtractor feature saves logic resources by using one set of

LEs to implement both an adder and a subtractor. This feature is controlled by the

LAB-wide control signal addnsub. The addnsub signal sets the LAB to perform either

A + B or A – B. The LUT computes addition; subtraction is computed by adding the

two’s complement of the intended subtractor. The LAB-wide signal converts to two’s

complement by inverting the B bits within the LAB and setting carry-in to 1, which

adds one to the least significant bit (LSB). The LSB of an adder/subtractor must be

placed in the first LE of the LAB, where the LAB-wide addnsub signal automatically

sets the carry-in to 1. The Quartus II Compiler automatically places and uses the

adder/subtractor feature when using adder/subtractor parameterized functions.

LE Operating Modes

The MAX II LE can operate in one of the following modes:

■

“Normal Mode”

■

“Dynamic Arithmetic Mode”

Each mode uses LE resources differently. In each mode, eight available inputs to the

LE, the four data inputs from the LAB local interconnect, carry-in0 and carry-

in1from the previous LE, the LAB carry-in from the previous carry-chain LAB, and

the register chain connection are directed to different destinations to implement the

desired logic function. LAB-wide signals provide clock, asynchronous clear,

asynchronous preset/load, synchronous clear, synchronous load, and clock enable

control for the register. These LAB-wide signals are available in all LE modes. The

addnsub control signal is allowed in arithmetic mode.

The Quartus II software, in conjunction with parameterized functions such as library

of parameterized modules (LPM) functions, automatically chooses the appropriate

mode for common functions such as counters, adders, subtractors, and arithmetic

functions.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–9

Logic Elements

Normal Mode

The normal mode is suitable for general logic applications and combinational

functions. In normal mode, four data inputs from the LAB local interconnect are

inputs to a four-input LUT (see Figure 2–7). The Quartus II Compiler automatically

selects the carry-in or the data3 signal as one of the inputs to the LUT. Each LE can use

LUT chain connections to drive its combinational output directly to the next LE in the

LAB. Asynchronous load data for the register comes from the data3 input of the LE.

LEs in normal mode support packed registers.

Figure 2–7. LE in Normal Mode

sload

sclear

aload

(LAB Wide) (LAB Wide)

(LAB Wide)

Register chain

connection

addnsub (LAB Wide)

ALD/PRE

(1)

Row, column, and

ADATA

D

Q

DirectLink routing

data1

data2

Row, column, and

DirectLink routing

ENA

CLRN

data3

cin (from cout

of previous LE)

4-Input

LUT

clock (LAB Wide)

Local routing

data4

ena (LAB Wide)

aclr (LAB Wide)

LUT chain

connection

Register

chain output

Register Feedback

Note to Figure 2–7:

(1) This signal is only allowed in normal mode if the LE is at the end of an adder/subtractor chain.

Dynamic Arithmetic Mode

The dynamic arithmetic mode is ideal for implementing adders, counters,

accumulators, wide parity functions, and comparators. An LE in dynamic arithmetic

mode uses four 2-input LUTs configurable as a dynamic adder/subtractor. The first

two 2-input LUTs compute two summations based on a possible carry-in of 1 or 0; the

other two LUTs generate carry outputs for the two chains of the carry-select circuitry.

As shown in Figure 2–8, the LAB carry-in signal selects either the carry-in0or

carry-in1 chain. The selected chain’s logic level in turn determines which parallel sum

is generated as a combinational or registered output. For example, when

implementing an adder, the sum output is the selection of two possible calculated

sums:

data1 + data2 + carry in0

or

data1 + data2 + carry-in1

MAX II Device Handbook

2–10

Chapter 2: MAX II Architecture

Logic Elements

The other two LUTs use the data1 and data2 signals to generate two possible carry-out

signals: one for a carry of 1 and the other for a carry of 0. The carry-in0 signal acts

as the carry-select for the carry-out0output and carry-in1acts as the carry-

select for the carry-out1output. LEs in arithmetic mode can drive out registered

and unregistered versions of the LUT output.

The dynamic arithmetic mode also offers clock enable, counter enable, synchronous

up/down control, synchronous clear, synchronous load, and dynamic

adder/subtractor options. The LAB local interconnect data inputs generate the

counter enable and synchronous up/down control signals. The synchronous clear

and synchronous load options are LAB-wide signals that affect all registers in the

LAB. The Quartus II software automatically places any registers that are not used by

the counter into other LABs. The addnsub LAB-wide signal controls whether the LE

acts as an adder or subtractor.

Figure 2–8. LE in Dynamic Arithmetic Mode

LAB Carry-In

Carry-In0

sload

(LAB Wide) (LAB Wide)

Register chain

connection

sclear

aload

(LAB Wide)

Carry-In1

addnsub

(LAB Wide)

(1)

ALD/PRE

data1

data2

data3

LUT

ADATA

D

Row, column, and

direct link routing

Q

LUT

Row, column, and

direct link routing

ENA

CLRN

clock (LAB Wide)

ena (LAB Wide)

aclr (LAB Wide)

Local routing

LUT chain

connection

Register

chain output

Register Feedback

Carry-Out0 Carry-Out1

Note to Figure 2–8:

(1) The addnsubsignal is tied to the carry input for the first LE of a carry chain only.

Carry-Select Chain

The carry-select chain provides a very fast carry-select function between LEs in

dynamic arithmetic mode. The carry-select chain uses the redundant carry calculation

to increase the speed of carry functions. The LE is configured to calculate outputs for a

possible carry-in of 0 and carry-in of 1 in parallel. The carry-in0and carry-in1

signals from a lower-order bit feed forward into the higher-order bit via the parallel

carry chain and feed into both the LUT and the next portion of the carry chain. Carry-

select chains can begin in any LE within an LAB.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–11

Logic Elements

The speed advantage of the carry-select chain is in the parallel precomputation of

carry chains. Since the LAB carry-in selects the precomputed carry chain, not every LE

is in the critical path. Only the propagation delays between LAB carry-in generation

(LE 5 and LE 10) are now part of the critical path. This feature allows the MAX II

architecture to implement high-speed counters, adders, multipliers, parity functions,

and comparators of arbitrary width.

Figure 2–9 shows the carry-select circuitry in an LAB for a 10-bit full adder. One

portion of the LUT generates the sum of two bits using the input signals and the

appropriate carry-in bit; the sum is routed to the output of the LE. The register can be

bypassed for simple adders or used for accumulator functions. Another portion of the

LUT generates carry-out bits. An LAB-wide carry-in bit selects which chain is used for

the addition of given inputs. The carry-in signal for each chain, carry-in0or

carry-in1, selects the carry-out to carry forward to the carry-in signal of the next-

higher-order bit. The final carry-out signal is routed to an LE, where it is fed to local,

row, or column interconnects.

Figure 2–9. Carry-Select Chain

LAB Carry-In

0

1

LAB Carry-In

Carry-In0

Sum1

Sum2

Sum3

Sum4

Sum5

A1

B1

LE0

LE1

LE2

LE3

LE4

Carry-In1

A2

B2

LUT

data1

data2

Sum

A3

B3

A4

B4

LUT

A5

B5

0

1

Carry-Out0

Carry-Out1

Sum6

Sum7

Sum8

Sum9

Sum10

A6

B6

LE5

LE6

LE7

LE8

LE9

A7

B7

A8

B8

A9

B9

A10

B10

To top of adjacent LAB

LAB Carry-Out

MAX II Device Handbook

2–12

Chapter 2: MAX II Architecture

MultiTrack Interconnect

The Quartus II software automatically creates carry chain logic during design

processing, or you can create it manually during design entry. Parameterized

functions such as LPM functions automatically take advantage of carry chains for the

appropriate functions. The Quartus II software creates carry chains longer than 10 LEs

by linking adjacent LABs within the same row together automatically. A carry chain

can extend horizontally up to one full LAB row, but does not extend between LAB

rows.

Clear and Preset Logic Control

LAB-wide signals control the logic for the register’s clear and preset signals. The LE

directly supports an asynchronous clear and preset function. The register preset is

achieved through the asynchronous load of a logic high. MAX II devices support

simultaneous preset/asynchronous load and clear signals. An asynchronous clear

signal takes precedence if both signals are asserted simultaneously. Each LAB

supports up to two clears and one preset signal.

In addition to the clear and preset ports, MAX II devices provide a chip-wide reset pin

(DEV_CLRn) that resets all registers in the device. An option set before compilation in

the Quartus II software controls this pin. This chip-wide reset overrides all other

control signals and uses its own dedicated routing resources (that is, it does not use

any of the four global resources). Driving this signal low before or during power-up

prevents user mode from releasing clears within the design. This allows you to control

when clear is released on a device that has just been powered-up. If not set for its chip-

wide reset function, the DEV_CLRnpin is a regular I/O pin.

By default, all registers in MAX II devices are set to power-up low. However, this

power-up state can be set to high on individual registers during design entry using

the Quartus II software.

MultiTrack Interconnect

In the MAX II architecture, connections between LEs, the UFM, and device I/O pins

are provided by the MultiTrack interconnect structure. The MultiTrack interconnect

consists of continuous, performance-optimized routing lines used for inter- and intra-

design block connectivity. The Quartus II Compiler automatically places critical

design paths on faster interconnects to improve design performance.

The MultiTrack interconnect consists of row and column interconnects that span fixed

distances. A routing structure with fixed length resources for all devices allows

predictable and short delays between logic levels instead of large delays associated

with global or long routing lines. Dedicated row interconnects route signals to and

from LABs within the same row. These row resources include:

■

DirectLink interconnects between LABs

■

R4 interconnects traversing four LABs to the right or left

The DirectLink interconnect allows an LAB to drive into the local interconnect of its

left and right neighbors. The DirectLink interconnect provides fast communication

between adjacent LABs and/or blocks without using row interconnect resources.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–13

MultiTrack Interconnect

The R4 interconnects span four LABs and are used for fast row connections in a four-

LAB region. Every LAB has its own set of R4 interconnects to drive either left or right.

Figure 2–10 shows R4 interconnect connections from an LAB. R4 interconnects can

drive and be driven by row IOEs. For LAB interfacing, a primary LAB or horizontal

LAB neighbor can drive a given R4 interconnect. For R4 interconnects that drive to the

right, the primary LAB and right neighbor can drive on to the interconnect. For R4

interconnects that drive to the left, the primary LAB and its left neighbor can drive on

to the interconnect. R4 interconnects can drive other R4 interconnects to extend the

range of LABs they can drive. R4 interconnects can also drive C4 interconnects for

connections from one row to another.

Figure 2–10. R4 Interconnect Connections

Adjacent LAB can

drive onto another

LAB’s R4 Interconnect

R4 Interconnect

Driving Right

C4 Column Interconnects (1)

R4 Interconnect

Driving Left

LAB

Neighbor

Primary

LAB (2)

LAB

Neighbor

Notes to Figure 2–10:

(1) C4 interconnects can drive R4 interconnects.

(2) This pattern is repeated for every LAB in the LAB row.

The column interconnect operates similarly to the row interconnect. Each column of

LABs is served by a dedicated column interconnect, which vertically routes signals to

and from LABs and row and column IOEs. These column resources include:

■

LUT chain interconnects within an LAB

Register chain interconnects within an LAB

C4 interconnects traversing a distance of four LABs in an up and down direction

MAX II devices include an enhanced interconnect structure within LABs for routing

LE output to LE input connections faster using LUT chain connections and register

chain connections. The LUT chain connection allows the combinational output of an

LE to directly drive the fast input of the LE right below it, bypassing the local

interconnect. These resources can be used as a high-speed connection for wide fan-in

MAX II Device Handbook

2–14

Chapter 2: MAX II Architecture

MultiTrack Interconnect

functions from LE 1 to LE 10 in the same LAB. The register chain connection allows

the register output of one LE to connect directly to the register input of the next LE in

the LAB for fast shift registers. The Quartus II Compiler automatically takes

advantage of these resources to improve utilization and performance. Figure 2–11

shows the LUT chain and register chain interconnects.

Figure 2–11. LUT Chain and Register Chain Interconnects

Local Interconnect

Routing Among LEs

in the LAB

LE0

LUT Chain

Routing to

Adjacent LE

Register Chain

Routing to Adjacent

LE's Register Input

LE1

LE2

LE3

LE4

LE5

LE6

LE7

LE8

Local

Interconnect

LE9

The C4 interconnects span four LABs up or down from a source LAB. Every LAB has

its own set of C4 interconnects to drive either up or down. Figure 2–12 shows the C4

interconnect connections from an LAB in a column. The C4 interconnects can drive

and be driven by column and row IOEs. For LAB interconnection, a primary LAB or

its vertical LAB neighbor can drive a given C4 interconnect. C4 interconnects can

drive each other to extend their range as well as drive row interconnects for column-

to-column connections.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–15

MultiTrack Interconnect

Figure 2–12. C4 Interconnect Connections (Note 1)

C4 Interconnect

Drives Local and R4

Interconnects

Up to Four Rows

C4 Interconnect

Driving Up

LAB

Row

Interconnect

Adjacent LAB can

drive onto neighboring

LAB's C4 interconnect

Local

Interconnect

C4 Interconnect

Driving Down

Note to Figure 2–12:

(1) Each C4 interconnect can drive either up or down four rows.

MAX II Device Handbook

2–16

Chapter 2: MAX II Architecture

Global Signals

The UFM block communicates with the logic array similar to LAB-to-LAB interfaces.

The UFM block connects to row and column interconnects and has local interconnect

regions driven by row and column interconnects. This block also has DirectLink

interconnects for fast connections to and from a neighboring LAB. For more

information about the UFM interface to the logic array, see “User Flash Memory

Block” on page 2–18.

Table 2–2 shows the MAX II device routing scheme.

Table 2–2. MAX II Device Routing Scheme

Destination

LUT

Register Local DirectLink

UFM

Column Row Fast I/O

Source

LUT Chain

Chain

(1)

—

(1)

—

R4 (1)

C4 (1)

—

LE

v

Block

IOE

(1)

—

v

—

Register Chain

—

Local

Interconnect

—

v

DirectLink

Interconnect

—

v

—

R4 Interconnect

C4 Interconnect

LE

—

v

—

v

—

v

—

v

—

v

—

v

—

v

—

v

—

v

—

UFM Block

Column IOE

Row IOE

Note to Table 2–2:

(1) These categories are interconnects.

Global Signals

Each MAX II device has four dual-purpose dedicated clock pins (GCLK[3..0], two

pins on the left side and two pins on the right side) that drive the global clock network

for clocking, as shown in Figure 2–13. These four pins can also be used as general-

purpose I/O if they are not used to drive the global clock network.

The four global clock lines in the global clock network drive throughout the entire

device. The global clock network can provide clocks for all resources within the

device including LEs, LAB local interconnect, IOEs, and the UFM block. The global

clock lines can also be used for global control signals, such as clock enables,

synchronous or asynchronous clears, presets, output enables, or protocol control

signals such as TRDYand IRDYfor PCI. Internal logic can drive the global clock

network for internally-generated global clocks and control signals. Figure 2–13 shows

the various sources that drive the global clock network.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–17

Global Signals

Figure 2–13. Global Clock Generation

GCLK0

GCLK1

GCLK2

GCLK3

4

Global Clock

Network

4

Logic Array(1)

Note to Figure 2–13:

(1) Any I/O pin can use a MultiTrack interconnect to route as a logic array-generated global clock signal.

The global clock network drives to individual LAB column signals, LAB column

clocks [3..0], that span an entire LAB column from the top to the bottom of the device.

Unused global clocks or control signals in a LAB column are turned off at the LAB

column clock buffers shown in Figure 2–14. The LAB column clocks [3..0] are

multiplexed down to two LAB clock signals and one LAB clear signal. Other control

signal types route from the global clock network into the LAB local interconnect. See

“LAB Control Signals” on page 2–5 for more information.

MAX II Device Handbook

2–18

Chapter 2: MAX II Architecture

User Flash Memory Block

Figure 2–14. Global Clock Network (Note 1)

LAB Column

clock[3..0]

I/O Block Region

4

LAB Column

clock[3..0]

I/O Block Region

UFM Block (2)

CFM Block

Notes to Figure 2–14:

(1) LAB column clocks in I/O block regions provide high fan-out output enable signals.

(2) LAB column clocks drive to the UFM block.

User Flash Memory Block

MAX II devices feature a single UFM block, which can be used like a serial EEPROM

for storing non-volatile information up to 8,192 bits. The UFM block connects to the

logic array through the MultiTrack interconnect, allowing any LE to interface to the

UFM block. Figure 2–15 shows the UFM block and interface signals. The logic array is

used to create customer interface or protocol logic to interface the UFM block data

outside of the device. The UFM block offers the following features:

■

Non-volatile storage up to 16-bit wide and 8,192 total bits

Two sectors for partitioned sector erase

Built-in internal oscillator that optionally drives logic array

Program, erase, and busy signals

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–19

User Flash Memory Block

■

Auto-increment addressing

Serial interface to logic array with programmable interface

Figure 2–15. UFM Block and Interface Signals

UFM Block

PROGRAM

ERASE

RTP_BUSY

BUSY

Program

Erase

Control

_

:

OSC

4

OSC_ENA

OSC

UFM Sector 1

UFM Sector 0

9

ARCLK

Address

Register

16

ARSHFT

ARDin

DRDin

Data Register

DRDout

DRCLK

DRSHFT

UFM Storage

Each device stores up to 8,192 bits of data in the UFM block. Table 2–3 shows the data

size, sector, and address sizes for the UFM block.

Table 2–3. UFM Array Size

Device

EPM240

EPM570

EPM1270

EPM2210

Total Bits

Sectors

Address Bits

Data Width

8,192

2

9

16

(4,096 bits/sector)

There are 512 locations with 9-bit addressing ranging from 000hto 1FFh. Sector 0

address space is 000hto 0FFhand Sector 1 address space is from 100hto 1FFh. The

data width is up to 16 bits of data. The Quartus II software automatically creates logic

to accommodate smaller read or program data widths. Erasure of the UFM involves

individual sector erasing (that is, one erase of sector 0 and one erase of sector 1 is

required to erase the entire UFM block). Since sector erase is required before a

program or write, having two sectors enables a sector size of data to be left untouched

while the other sector is erased and programmed with new data.

MAX II Device Handbook

2–20

Chapter 2: MAX II Architecture

User Flash Memory Block

Internal Oscillator

As shown in Figure 2–15, the dedicated circuitry within the UFM block contains an

oscillator. The dedicated circuitry uses this internally for its read and program

operations. This oscillator's divide by 4 output can drive out of the UFM block as a

logic interface clock source or for general-purpose logic clocking. The typical OSC

output signal frequency ranges from 3.3 to 5.5 MHz, and its exact frequency of

operation is not programmable.

Program, Erase, and Busy Signals

The UFM block’s dedicated circuitry automatically generates the necessary internal

program and erase algorithm once the PROGRAMor ERASEinput signals have been

asserted. The PROGRAMor ERASEsignal must be asserted until the busy signal

deasserts, indicating the UFM internal program or erase operation has completed. The

UFM block also supports JTAG as the interface for programming and/or reading.

f

For more information about programming and erasing the UFM block, refer to the

Using User Flash Memory in MAX II Devices chapter in the MAX II Device Handbook.

Auto-Increment Addressing

The UFM block supports standard read or stream read operations. The stream read is

supported with an auto-increment address feature. Deasserting the ARSHIFTsignal

while clocking the ARCLKsignal increments the address register value to read

consecutive locations from the UFM array.

Serial Interface

The UFM block supports a serial interface with serial address and data signals. The

internal shift registers within the UFM block for address and data are 9 bits and 16 bits

wide, respectively. The Quartus II software automatically generates interface logic in

LEs for a parallel address and data interface to the UFM block. Other standard

protocol interfaces such as SPI are also automatically generated in LE logic by the

Quartus II software.

f

For more information about the UFM interface signals and the Quartus II LE-based

alternate interfaces, refer to the Using User Flash Memory in MAX II Devices chapter in

the MAX II Device Handbook.

UFM Block to Logic Array Interface

The UFM block is a small partition of the flash memory that contains the CFM block,

as shown in Figure 2–1 and Figure 2–2. The UFM block for the EPM240 device is

located on the left side of the device adjacent to the left most LAB column. The UFM

block for the EPM570, EPM1270, and EPM2210 devices is located at the bottom left of

the device. The UFM input and output signals interface to all types of interconnects

(R4 interconnect, C4 interconnect, and DirectLink interconnect to/from adjacent LAB

rows). The UFM signals can also be driven from global clocks, GCLK[3..0]. The

interface region for the EPM240 device is shown in Figure 2–16. The interface regions

for EPM570, EPM1270, and EPM2210 devices are shown in Figure 2–17.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–21

User Flash Memory Block

Figure 2–16. EPM240 UFM Block LAB Row Interface (Note 1)

CFM Block

UFM Block

LAB

PROGRAM

ERASE

OSC_ENA

LAB

RTP_BUSY

DRDin

DRCLK

DRSHFT

ARin

ARCLK

ARSHFT

DRDout

OSC

LAB

BUSY

Note to Figure 2–16:

(1) The UFM block inputs and outputs can drive to/from all types of interconnects, not only DirectLink interconnects from adjacent row LABs.

MAX II Device Handbook

2–22

Chapter 2: MAX II Architecture

MultiVolt Core

Figure 2–17. EPM570, EPM1270, and EPM2210 UFM Block LAB Row Interface

CFM Block

RTP_BUSY

BUSY

OSC

DRDout

DRDin

LAB

DRDCLK

DRDSHFT

ARDin

PROGRAM

ERASE

OSC_ENA

ARCLK

ARSHFT

LAB

UFM Block

LAB

MultiVolt Core

The MAX II architecture supports the MultiVolt core feature, which allows MAX II

devices to support multiple V_CClevels on the V_CCINTsupply. An internal linear voltage

regulator provides the necessary 1.8-V internal voltage supply to the device. The

voltage regulator supports 3.3-V or 2.5-V supplies on its inputs to supply the 1.8-V

internal voltage to the device, as shown in Figure 2–18. The voltage regulator is not

guaranteed for voltages that are between the maximum recommended 2.5-V

operating voltage and the minimum recommended 3.3-V operating voltage.

The MAX IIG and MAX IIZ devices use external 1.8-V supply. The 1.8-V V_CCexternal

supply powers the device core directly.

Figure 2–18. MultiVolt Core Feature in MAX II Devices

Voltage

Regulator

1.8-V Core

Voltage

3.3-V or 2.5-V on

VCCINT Pins

1.8-V on

VCCINT Pins

1.8-V Core

Voltage

MAX II Device

MAX IIG or MAX IIZ Device

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–23

I/O Structure

IOEs support many features, including:

■

LVTTL and LVCMOS I/O standards

3.3-V, 32-bit, 66-MHz PCI compliance

Joint Test Action Group (JTAG) boundary-scan test (BST) support

Programmable drive strength control

Weak pull-up resistors during power-up and in system programming

Slew-rate control

Tri-state buffers with individual output enable control

Bus-hold circuitry

Programmable pull-up resistors in user mode

Unique output enable per pin

Open-drain outputs

Schmitt trigger inputs

Fast I/O connection

Programmable input delay

MAX II device IOEs contain a bidirectional I/O buffer. Figure 2–19 shows the MAX II

IOE structure. Registers from adjacent LABs can drive to or be driven from the IOE’s

bidirectional I/O buffers. The Quartus II software automatically attempts to place

registers in the adjacent LAB with fast I/O connection to achieve the fastest possible

clock-to-output and registered output enable timing. For input registers, the

Quartus II software automatically routes the register to guarantee zero hold time.

You can set timing assignments in the Quartus II software to achieve desired I/O

timing.

Fast I/O Connection

A dedicated fast I/O connection from the adjacent LAB to the IOEs within an I/O

block provides faster output delays for clock-to-output and t_PDpropagation delays.

This connection exists for data output signals, not output enable signals or input

signals. Figure 2–20, Figure 2–21, and Figure 2–22 illustrate the fast I/O connection.

MAX II Device Handbook

2–24

Chapter 2: MAX II Architecture

I/O Structure

Figure 2–19. MAX II IOE Structure

Data_in Fast_out

Data_out OE

DEV_OE

Optional

PCI Clamp (1)

Programmable

Pull-Up

V

CCIO

I/O Pin

Optional Bus-Hold

Circuit

Drive Strength Control

Open-Drain Output

Slew Control

Optional Schmitt

Trigger Input

Programmable

Input Delay

Note to Figure 2–19:

(1) Available in EPM1270 and EPM2210 devices only.

I/O Blocks

The IOEs are located in I/O blocks around the periphery of the MAX II device. There

are up to seven IOEs per row I/O block (5 maximum in the EPM240 device) and up to

four IOEs per column I/O block. Each column or row I/O block interfaces with its

adjacent LAB and MultiTrack interconnect to distribute signals throughout the device.

The row I/O blocks drive row, column, or DirectLink interconnects. The column I/O

blocks drive column interconnects.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–25

I/O Structure

Figure 2–20 shows how a row I/O block connects to the logic array.

Figure 2–20. Row I/O Block Connection to the Interconnect (Note 1)

R4 Interconnects

C4 Interconnects

I/O Block Local

Interconnect

data_out

[6..0]

7

OE

[6..0]

7

LAB

Row

I/O Block

fast_out

[6..0]

7

data_in[6..0]

Direct Link

Interconnect

from Adjacent LAB

Direct Link

Interconnect

Row I/O Block

Contains up to

Seven IOEs

to Adjacent LAB

LAB Column

clock [3..0]

LAB Local

Interconnect

Note to Figure 2–20:

(1) Each of the seven IOEs in the row I/O block can have one data_outor fast_outoutput, one OEoutput, and one data_ininput.

MAX II Device Handbook

2–26

Chapter 2: MAX II Architecture

I/O Structure

Figure 2–21 shows how a column I/O block connects to the logic array.

Figure 2–21. Column I/O Block Connection to the Interconnect (Note 1)

Column I/O

Block Contains

Up To 4 IOEs

Column I/O Block

data_in

[3..0]

data_out

[3..0]

OE

[3..0]

fast_out

[3..0]

4

I/O Block

Local Interconnect

Fast I/O

Interconnect

Path

LAB Column

Clock [3..0]

R4 Interconnects

LAB

LAB Local

Interconnect

LAB Local

Interconnect

LAB Local

Interconnect

C4 Interconnects

Note to Figure 2–21:

(1) Each of the four IOEs in the column I/O block can have one data_outor fast_outoutput, one OEoutput, and one data_ininput.

I/O Standards and Banks

MAX II device IOEs support the following I/O standards:

■

3.3-V LVTTL/LVCMOS

2.5-V LVTTL/LVCMOS

1.8-V LVTTL/LVCMOS

1.5-V LVCMOS

3.3-V PCI

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–27

I/O Structure

Table 2–4 describes the I/O standards supported by MAX II devices.

Table 2–4. MAX II I/O Standards

Output Supply Voltage

(VCCIO) (V)

I/O Standard

Type

3.3-V LVTTL/LVCMOS

2.5-V LVTTL/LVCMOS

1.8-V LVTTL/LVCMOS

1.5-V LVCMOS

Single-ended

3.3

2.5

1.8

1.5

3.3

3.3-V PCI (1)

Note to Table 2–4:

(1) The 3.3-V PCI compliant I/O is supported in Bank 3 of the EPM1270 and EPM2210

devices.

The EPM240 and EPM570 devices support two I/O banks, as shown in Figure 2–22.

Each of these banks support all the LVTTL and LVCMOS standards shown in

Table 2–4. PCI compliant I/O is not supported in these devices and banks.

Figure 2–22. MAX II I/O Banks for EPM240 and EPM570 (Note 1), (2)

I/O Bank 1

I/O Bank 2

All I/O Banks Support

■ 3.3-V LVTTL/LVCMOS

■ 2.5-V LVTTL/LVCMOS

■ 1.8-V LVTTL/LVCMOS

■ 1.5-V LVCMOS

Notes to Figure 2–22:

(1) Figure 2–22 is a top view of the silicon die.

(2) Figure 2–22 is a graphical representation only. Refer to the pin list and the Quartus II software for exact pin locations.

The EPM1270 and EPM2210 devices support four I/O banks, as shown in Figure 2–23.

Each of these banks support all of the LVTTL and LVCMOS standards shown in

Table 2–4. PCI compliant I/O is supported in Bank 3. Bank 3 supports the PCI

clamping diode on inputs and PCI drive compliance on outputs. You must use Bank 3

for designs requiring PCI compliant I/O pins. The Quartus II software automatically

places I/O pins in this bank if assigned with the PCI I/O standard.

MAX II Device Handbook

2–28

Chapter 2: MAX II Architecture

I/O Structure

Figure 2–23. MAX II I/O Banks for EPM1270 and EPM2210 (Note 1), (2)

I/O Bank 2

Also Supports

the 3.3-V PCI

I/O Standard

All I/O Banks Support

■ 3.3-V LVTTL/LVCMOS

■ 2.5-V LVTTL/LVCMOS

■ 1.8-V LVTTL/LVCMOS

■ 1.5-V LVCMOS

I/O Bank 1

I/O Bank 3

I/O Bank 4

Notes to Figure 2–23:

(1) Figure 2–23 is a top view of the silicon die.

(2) Figure 2–23 is a graphical representation only. Refer to the pin list and the Quartus II software for exact pin locations.

Each I/O bank has dedicated V_CCIOpins that determine the voltage standard support

in that bank. A single device can support 1.5-V, 1.8-V, 2.5-V, and 3.3-V interfaces; each

individual bank can support a different standard. Each I/O bank can support

multiple standards with the same V_CCIOfor input and output pins. For example, when

V

_CCIOis 3.3 V, Bank 3 can support LVTTL, LVCMOS, and 3.3-V PCI. V_CCIOpowers both

the input and output buffers in MAX II devices.

The JTAG pins for MAX II devices are dedicated pins that cannot be used as regular

I/O pins. The pins TMS, TDI, TDO, and TCKsupport all the I/O standards shown in

Table 2–4 on page 2–27 except for PCI. These pins reside in Bank 1 for all MAX II

devices and their I/O standard support is controlled by the V_CCIOsetting for Bank 1.

PCI Compliance

The MAX II EPM1270 and EPM2210 devices are compliant with PCI applications as

well as all 3.3-V electrical specifications in the PCI Local Bus Specification Revision 2.2.

These devices are also large enough to support PCI intellectual property (IP) cores.

Table 2–5 shows the MAX II device speed grades that meet the PCI timing

specifications.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–29

I/O Structure

Table 2–5. MAX II Devices and Speed Grades that Support 3.3-V PCI Electrical Specifications and

Meet PCI Timing

Device

33-MHz PCI

66-MHz PCI

–3 Speed Grade

EPM1270

EPM2210

All Speed Grades

Schmitt Trigger

The input buffer for each MAX II device I/O pin has an optional Schmitt trigger

setting for the 3.3-V and 2.5-V standards. The Schmitt trigger allows input buffers to

respond to slow input edge rates with a fast output edge rate. Most importantly,

Schmitt triggers provide hysteresis on the input buffer, preventing slow-rising noisy

input signals from ringing or oscillating on the input signal driven into the logic array.

This provides system noise tolerance on MAX II inputs, but adds a small, nominal

input delay.

The JTAG input pins (TMS, TCK, and TDI) have Schmitt trigger buffers that are always

enabled.

1

The TCKinput is susceptible to high pulse glitches when the input signal fall time is

greater than 200 ns for all I/O standards.

Output Enable Signals

Each MAX II IOE output buffer supports output enable signals for tri-state control.

The output enable signal can originate from the GCLK[3..0] global signals or from

the MultiTrack interconnect. The MultiTrack interconnect routes output enable signals

and allows for a unique output enable for each output or bidirectional pin.

MAX II devices also provide a chip-wide output enable pin (DEV_OE) to control the

output enable for every output pin in the design. An option set before compilation in

the Quartus II software controls this pin. This chip-wide output enable uses its own

routing resources and does not use any of the four global resources. If this option is

turned on, all outputs on the chip operate normally when DEV_OEis asserted. When

the pin is deasserted, all outputs are tri-stated. If this option is turned off, the DEV_OE

pin is disabled when the device operates in user mode and is available as a user I/O

pin.

Programmable Drive Strength

The output buffer for each MAX II device I/O pin has two levels of programmable

drive strength control for each of the LVTTL and LVCMOS I/O standards.

Programmable drive strength provides system noise reduction control for high

performance I/O designs. Although a separate slew-rate control feature exists, using

the lower drive strength setting provides signal slew-rate control to reduce system

noise and signal overshoot without the large delay adder associated with the

slew-rate control feature. Table 2–6 shows the possible settings for the I/O standards

with drive strength control. The Quartus II software uses the maximum current

strength as the default setting. The PCI I/O standard is always set at 20 mA with no

alternate setting.

MAX II Device Handbook

2–30

Chapter 2: MAX II Architecture

I/O Structure

Table 2–6. Programmable Drive Strength (Note 1)

I/O Standard IOH/IOL Current Strength Setting (mA)

3.3-V LVTTL

16

8

3.3-V LVCMOS

8

4

2.5-V LVTTL/LVCMOS

1.8-V LVTTL/LVCMOS

1.5-V LVCMOS

14

7

6

3

4

2

Note to Table 2–6:

(1) The I_OHcurrent strength numbers shown are for a condition of a V_OUT= V_OHminimum, where the V_OHminimum

is specified by the I/O standard. The I_OLcurrent strength numbers shown are for a condition of a V_OUT= V_OL

maximum, where the V_OLmaximum is specified by the I/O standard. For 2.5-V LVTTL/LVCMOS, the I_OH

condition is V_OUT= 1.7 V and the I_OLcondition is V_OUT= 0.7 V.

Slew-Rate Control

The output buffer for each MAX II device I/O pin has a programmable output slew-

rate control that can be configured for low noise or high-speed performance. A faster

slew rate provides high-speed transitions for high-performance systems. However,

these fast transitions may introduce noise transients into the system. A slow slew rate

reduces system noise, but adds a nominal output delay to rising and falling edges.

The lower the voltage standard (for example, 1.8-V LVTTL) the larger the output

delay when slow slew is enabled. Each I/O pin has an individual slew-rate control,

allowing the designer to specify the slew rate on a pin-by-pin basis. The slew-rate

control affects both the rising and falling edges.

Open-Drain Output

MAX II devices provide an optional open-drain (equivalent to open-collector) output

for each I/O pin. This open-drain output enables the device to provide system-level

control signals (for example, interrupt and write enable signals) that can be asserted

by any of several devices. This output can also provide an additional wired-OR plane.

Programmable Ground Pins

Each unused I/O pin on MAX II devices can be used as an additional ground pin.

This programmable ground feature does not require the use of the associated LEs in

the device. In the Quartus II software, unused pins can be set as programmable GND

on a global default basis or they can be individually assigned. Unused pins also have

the option of being set as tri-stated input pins.

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–31

I/O Structure

Bus Hold

Each MAX II device I/O pin provides an optional bus-hold feature. The bus-hold

circuitry can hold the signal on an I/O pin at its last-driven state. Since the bus-hold

feature holds the last-driven state of the pin until the next input signal is present, an

external pull-up or pull-down resistor is not necessary to hold a signal level when the

bus is tri-stated.

The bus-hold circuitry also pulls undriven pins away from the input threshold

voltage where noise can cause unintended high-frequency switching. The designer

can select this feature individually for each I/O pin. The bus-hold output will drive

no higher than V_CCIOto prevent overdriving signals. If the bus-hold feature is enabled,

the device cannot use the programmable pull-up option.

The bus-hold circuitry uses a resistor to pull the signal level to the last driven state.

The DC and Switching Characteristics chapter in the MAX II Device Handbook gives the

specific sustaining current for each V_CCIOvoltage level driven through this resistor and

overdrive current used to identify the next-driven input level.

The bus-hold circuitry is only active after the device has fully initialized. The bus-hold

circuit captures the value on the pin present at the moment user mode is entered.

Programmable Pull-Up Resistor

Each MAX II device I/O pin provides an optional programmable pull-up resistor

during user mode. If the designer enables this feature for an I/O pin, the pull-up

resistor holds the output to the V_CCIOlevel of the output pin’s bank.

1

The programmable pull-up resistor feature should not be used at the same time as the

bus-hold feature on a given I/O pin.

Programmable Input Delay

The MAX II IOE includes a programmable input delay that is activated to ensure zero

hold times. A path where a pin directly drives a register, with minimal routing

between the two, may require the delay to ensure zero hold time. However, a path

where a pin drives a register through long routing or through combinational logic

may not require the delay to achieve a zero hold time. The Quartus II software uses

this delay to ensure zero hold times when needed.

MultiVolt I/O Interface

The MAX II architecture supports the MultiVolt I/O interface feature, which allows

MAX II devices in all packages to interface with systems of different supply voltages.

The devices have one set of VCCpins for internal operation (V_CCINT), and up to four

sets for input buffers and I/O output driver buffers (V_CCIO), depending on the number

of I/O banks available in the devices where each set of VCCpins powers one I/O

bank. The EPM240 and EPM570 devices have two I/O banks respectively while the

EPM1270 and EPM2210 devices have four I/O banks respectively.

MAX II Device Handbook

2–32

Chapter 2: MAX II Architecture

Referenced Documents

Connect VCCIOpins to either a 1.5-V, 1.8 V, 2.5-V, or 3.3-V power supply, depending

on the output requirements. The output levels are compatible with systems of the

same voltage as the power supply (that is, when VCCIOpins are connected to a 1.5-V

power supply, the output levels are compatible with 1.5-V systems). When VCCIO

pins are connected to a 3.3-V power supply, the output high is 3.3 V and is compatible

with 3.3-V or 5.0-V systems. Table 2–7 summarizes MAX II MultiVolt I/O support.

Table 2–7. MAX II MultiVolt I/O Support (Note 1)

Input Signal

Output Signal

VCCIO (V)

1.5

1.5 V

1.8 V

2.5 V

3.3 V

5.0 V

1.5 V

1.8 V

2.5 V

3.3 V

5.0 V

v

—

v

—

v

—

v

—

v

v (4)

v

—

v (2)

v (3)

v (6)

v

v (3)

v (6)

—

v

v (6)

—

v

—

1.8

2.5

v (5)

v (7)

3.3

Notes to Table 2–7:

(1) To drive inputs higher than V_CCIObut less than 4.0 V including the overshoot, disable the I/O clamp diode. However, to drive 5.0-V inputs to the

device, enable the I/O clamp diode to prevent V_Ifrom rising above 4.0 V.

(2) When V_CCIO= 1.8 V, a MAX II device can drive a 1.5-V device with 1.8-V tolerant inputs.

(3) When V_CCIO= 2.5 V, a MAX II device can drive a 1.5-V or 1.8-V device with 2.5-V tolerant inputs.

(4) When V_CCIO= 3.3 V and a 2.5-V input signal feeds an input pin, the VCCIO supply current will be slightly larger than expected.

(5) MAX II devices can be 5.0-V tolerant with the use of an external resistor and the internal I/O clamp diode on the EPM1270 and EPM2210

devices.

(6) When V_CCIO= 3.3 V, a MAX II device can drive a 1.5-V, 1.8-V, or 2.5-V device with 3.3-V tolerant inputs.

(7) When V_CCIO= 3.3 V, a MAX II device can drive a device with 5.0-V TTL inputs but not 5.0-V CMOS inputs. In the case of 5.0-V CMOS, open-

drain setting with internal I/O clamp diode (available only on EPM1270 and EPM2210 devices) and external resistor is required.

f

For information about output pin source and sink current guidelines, refer to the AN

428: MAX II CPLD Design Guidelines.

Referenced Documents

This chapter referenced the following documents:

■

AN 428: MAX II CPLD Design Guidelines

DC and Switching Characteristics chapter in the MAX II Device Handbook

Hot Socketing and Power-On Reset in MAX II Devices chapter in the MAX II Device

Handbook

■

Using User Flash Memory in MAX II Devices chapter in the MAX II Device Handbook

MAX II Device Handbook

Chapter 2: MAX II Architecture

2–33

Document Revision History

Table 2–8 shows the revision history for this chapter.

Table 2–8. Document Revision History

Date and Revision Changes Made

Summary of Changes

October 2008,

version 2.2

■ Updated Table 2–4 and Table 2–6.

—

■ Updated “I/O Standards and Banks” section.

■ Updated New Document Format.

March 2008,

version 2.1

■ Updated “Schmitt Trigger” section.

—

December 2007,

version 2.0

■ Updated “Clear and Preset Logic Control” section.

■ Updated “MultiVolt Core” section.

■ Updated “MultiVolt I/O Interface” section.

■ Updated Table 2–7.

Updated document with

MAX IIZ information.

■ Added “Referenced Documents” section.

December 2006,

version 1.7

■ Minor update in “Internal Oscillator” section. Added document

—

revision history.

August 2006,

version 1.6

■ Updated functional description and I/O structure sections.

■ Minor content and table updates.

July 2006,

vervion 1.5

February 2006,

version 1.4

■ Updated “LAB Control Signals” section.

■ Updated “Clear and Preset Logic Control” section.

■ Updated “Internal Oscillator” section.

■ Updated Table 2–5.

August 2005,

version 1.3

■ Removed Note 2 from Table 2-7.

—

December 2004,

version 1.2

■ Added a paragraph to page 2-15.

June 2004,

version 1.1

■ Added CFM acronym. Corrected Figure 2-19.

MAX II Device Handbook

2–34

Chapter 2: MAX II Architecture

Document Revision History

MAX II Device Handbook

3. JTAG and In-System Programmability

MII51003-1.6

Introduction

This chapter discusses how to use the IEEE Standard 1149.1 Boundary-Scan Test (BST)

circuitry in MAX II devices and includes the following sections:

■

“IEEE Std. 1149.1 (JTAG) Boundary-Scan Support” on page 3–1

“In System Programmability” on page 3–4

■

IEEE Std. 1149.1 (JTAG) Boundary-Scan Support

®

All MAX II devices provide Joint Test Action Group (JTAG) boundary-scan test (BST)

circuitry that complies with the IEEE Std. 1149.1-2001 specification. JTAG boundary-

scan testing can only be performed at any time after V_CCINTand all V_CCIObanks have

been fully powered and a t_CONFIGamount of time has passed. MAX II devices can also

®

use the JTAG port for in-system programming together with either the Quartus II

software or hardware using Programming Object Files (.pof), JamTM Standard Test

and Programming Language (STAPL) Files (.jam), or Jam Byte-Code Files (.jbc).

The JTAG pins support 1.5-V, 1.8-V, 2.5-V, or 3.3-V I/O standards. The supported

voltage level and standard are determined by the V_CCIOof the bank where it resides.

The dedicated JTAG pins reside in Bank 1 of all MAX II devices.

MAX II devices support the JTAG instructions shown in Table 3–1.

Table 3–1. MAX II JTAG Instructions (Part 1 of 2)

JTAG Instruction

Instruction Code

Description

SAMPLE/PRELOAD

00 0000 0101

Allows a snapshot of signals at the device pins to be captured and

examined during normal device operation, and permits an initial data

pattern to be output at the device pins.

EXTEST(1)

BYPASS

00 0000 1111

11 1111 1111

00 0000 0111

Allows the external circuitry and board-level interconnects to be

tested by forcing a test pattern at the output pins and capturing test

results at the input pins.

Places the 1-bit bypass register between the TDIand TDOpins,

which allows the BST data to pass synchronously through selected

devices to adjacent devices during normal device operation.

USERCODE

Selects the 32-bit USERCODEregister and places it between the

TDIand TDOpins, allowing the USERCODEto be serially shifted

out of TDO. This register defaults to all 1’s if not specified in the

Quartus II software.

IDCODE

00 0000 0110

00 0000 1011

Selects the IDCODEregister and places it between TDIand TDO,

allowing the IDCODEto be serially shifted out of TDO.

HIGHZ(1)

Places the 1-bit bypass register between the TDIand TDOpins,

which allows the boundary scan test data to pass synchronously

through selected devices to adjacent devices during normal device

operation, while tri-stating all of the I/O pins.

MAX II Device Handbook

3–2

Chapter 3: JTAG and In-System Programmability

IEEE Std. 1149.1 (JTAG) Boundary-Scan Support

Table 3–1. MAX II JTAG Instructions (Part 2 of 2)

JTAG Instruction

CLAMP(1)

Instruction Code

Description

00 0000 1010

Places the 1-bit bypass register between the TDIand TDOpins,

which allows the boundary scan test data to pass synchronously

through selected devices to adjacent devices during normal device

operation, while holding I/O pins to a state defined by the data in the

boundary-scan register.

USER0

USER1

00 0000 1100

00 0000 1110

(2)

This instruction allows you to define the scan chain between TDI

and TDO in the MAX II logic array. This instruction is also used for

custom logic and JTAG interfaces.

This instruction allows you to define the scan chain between TDI

and TDOin the MAX II logic array. This instruction is also used for

custom logic and JTAG interfaces.

IEEE 1532

instructions

IEEE 1532 ISC instructions used when programming a MAX II device

via the JTAG port.

Notes to Table 3–1:

(1) HIGHZ, CLAMP, and EXTESTinstructions do not disable weak pull-up resistors or bus hold features.

(2) These instructions are shown in the 1532 BSDL files, which will be posted on the Altera^®website at www.altera.com when they are available.

w

Unsupported JTAG instructions should not be issued to the MAX II device as this may

put the device into an unknown state, requiring a power cycle to recover device

operation.

The MAX II device instruction register length is 10 bits and the USERCODEregister

length is 32 bits. Table 3–2 and Table 3–3 show the boundary-scan register length and

device IDCODEinformation for MAX II devices.

Table 3–2. MAX II Boundary-Scan Register Length

Device

EPM240

Boundary-Scan Register Length

240

480

636

816

EPM570

EPM1270

EPM2210

Table 3–3. 32-Bit MAX II Device IDCODE (Part 1 of 2)

Binary IDCODE (32 Bits) (1)

Version

Manufacturer

LSB

Device

EPM240

(4 Bits)

Part Number

Identity (11 Bits)

(1 Bit) (2)

HEX IDCODE

0000

0010 0000 1010 0001

000 0110 1110

1

0x020A10DD

EPM240G

EPM570

0000

0010 0000 1010 0010

0010 0000 1010 0011

0010 0000 1010 0100

0x020A20DD

0x020A30DD

0x020A40DD

EPM570G

EPM1270

EPM1270G

EPM2210

EPM2210G

MAX II Device Handbook

Chapter 3: JTAG and In-System Programmability

3–3

IEEE Std. 1149.1 (JTAG) Boundary-Scan Support

Table 3–3. 32-Bit MAX II Device IDCODE (Part 2 of 2)

Binary IDCODE (32 Bits) (1)

Version

(4 Bits)

Manufacturer

LSB

Device

Part Number

Identity (11 Bits)

(1 Bit) (2)

HEX IDCODE

0x020A50DD

0x020A60DD

EPM240Z

0000

0010 0000 1010 0101

0010 0000 1010 0110

000 0110 1110

1

EPM570Z

Notes to Table 3–2:

(1) The most significant bit (MSB) is on the left.

(2) The IDCODE’s least significant bit (LSB) is always 1.

f

For JTAG AC characteristics, refer to the DC and Switching Characteristics chapter in

the MAX II Device Handbook.

For more information about JTAG BST, refer to the IEEE 1149.1 (JTAG) Boundary-Scan

Testing for MAX II Devices chapter in the MAX II Device Handbook.

JTAG Block

The MAX II JTAG block feature allows you to access the JTAG TAP and state signals

when either the USER0 or USER1instruction is issued to the JTAG TAP. The USER0

and USER1instructions bring the JTAG boundary-scan chain (TDI) through the user

logic instead of the MAX II device’s boundary-scan cells. Each USERinstruction

allows for one unique user-defined JTAG chain into the logic array.

Parallel Flash Loader

The JTAG block ability to interface JTAG to non-JTAG devices is ideal for general-

purpose flash memory devices (such as Intel- or Fujitsu-based devices) that require

programming during in-circuit test. The flash memory devices can be used for FPGA

configuration or be part of system memory. In many cases, the MAX II device is

already connected to these devices as the configuration control logic between the

FPGA and the flash device. Unlike ISP-capable CPLD devices, bulk flash devices do

not have JTAG TAP pins or connections. For small flash devices, it is common to use

the serial JTAG scan chain of a connected device to program the non-JTAG flash

device. This is slow and inefficient in most cases and impractical for large parallel

flash devices. Using the MAX II device’s JTAG block as a parallel flash loader, with

the Quartus II software, to program and verify flash contents provides a fast and cost-

effective means of in-circuit programming during test. Figure 3–1 shows MAX II

being used as a parallel flash loader.

MAX II Device Handbook

3–4

Chapter 3: JTAG and In-System Programmability

In System Programmability

Figure 3–1. MAX II Parallel Flash Loader

MAX II Device

Flash

Memory Device

Altera FPGA

CONF_DONE

nSTATUS

nCE

DQ[7..0]

A[20..0]

OE

DQ[7..0]

A[20..0]

OE

WE

CE

RY/BY

DATA0

nCONFIG

DCLK

TDO_U

TDI_U

Parallel

TDI

TMS

TCK

Flash Loader

Configuration

Logic

TMS_U

TCK_U

SHIFT_U

CLKDR_U

(1),(2)

TDO

UPDATE_U

RUNIDLE_U

USER1_U

Notes to Figure 3–1:

(1) This block is implemented in LEs.

(2) This function is supported in the Quartus II software.

In System Programmability

MAX II devices can be programmed in-system via the industry standard 4-pin IEEE

Std. 1149.1 (JTAG) interface. In-system programmability (ISP) offers quick, efficient

iterations during design development and debugging cycles. The logic, circuitry, and

interconnects in the MAX II architecture are configured with flash-based SRAM

configuration elements. These SRAM elements require configuration data to be

loaded each time the device is powered. The process of loading the SRAM data is

called configuration. The on-chip configuration flash memory (CFM) block stores the

SRAM element’s configuration data. The CFM block stores the design’s configuration

pattern in a reprogrammable flash array. During ISP, the MAX II JTAG and ISP

circuitry programs the design pattern into the CFM block’s non-volatile flash array.

The MAX II JTAG and ISP controller internally generate the high programming

voltages required to program the CFM cells, allowing in-system programming with

any of the recommended operating external voltage supplies (that is, 3.3 V/2.5 V or

1.8 V for the MAX IIG and MAX IIZ devices). ISP can be performed anytime after

V

_CCINTand all V_CCIObanks have been fully powered and the device has completed the

configuration power-up time. By default, during in-system programming, the I/O

pins are tri-stated and weakly pulled-up to V_CCIOto eliminate board conflicts. The in-

system programming clamp and real-time ISP feature allow user control of I/O state

or behavior during ISP.

For more information, refer to “In-System Programming Clamp” on page 3–6 and

“Real-Time ISP” on page 3–7.

These devices also offer an ISP_DONEbit that provides safe operation when in-

system programming is interrupted. This ISP_DONE bit, which is the last bit

programmed, prevents all I/O pins from driving until the bit is programmed.

MAX II Device Handbook

Chapter 3: JTAG and In-System Programmability

3–5

In System Programmability

IEEE 1532 Support

The JTAG circuitry and ISP instruction set in MAX II devices is compliant to the IEEE

1532-2002 programming specification. This provides industry-standard hardware and

software for in-system programming among multiple vendor programmable logic

devices (PLDs) in a JTAG chain.

The MAX II 1532 BSDL files will be released on the Altera website when available.

Jam Standard Test and Programming Language (STAPL)

The Jam STAPL JEDEC standard, JESD71, can be used to program MAX II devices

with in-circuit testers, PCs, or embedded processors. The Jam byte code is also

supported for MAX II devices. These software programming protocols provide a

compact embedded solution for programming MAX II devices.

f

For more information, refer to the Using Jam STAPL for ISP via an Embedded Processor

chapter in the MAX II Device Handbook.

Programming Sequence

During in-system programming, 1532 instructions, addresses, and data are shifted

into the MAX II device through the TDIinput pin. Data is shifted out through the TDO

output pin and compared against the expected data. Programming a pattern into the

device requires the following six ISP steps. A stand-alone verification of a

programmed pattern involves only stages 1, 2, 5, and 6. These steps are automatically

executed by third-party programmers, the Quartus II software, or the Jam STAPL and

Jam Byte-Code Players.

1. Enter ISP—The enter ISP stage ensures that the I/O pins transition smoothly from

user mode to ISP mode.

2. Check ID—Before any program or verify process, the silicon ID is checked. The

time required to read this silicon ID is relatively small compared to the overall

programming time.

3. Sector Erase—Erasing the device in-system involves shifting in the instruction to

erase the device and applying an erase pulse(s). The erase pulse is automatically

generated internally by waiting in the run/test/idle state for the specified erase

pulse time of 500 ms for the CFM block and 500 ms for each sector of the UFM

block.

4. Program—Programming the device in-system involves shifting in the address,

data, and program instruction and generating the program pulse to program the

flash cells. The program pulse is automatically generated internally by waiting in

the run/test/idle state for the specified program pulse time of 75 µs. This process

is repeated for each address in the CFM and UFM blocks.

5. Verify—Verifying a MAX II device in-system involves shifting in addresses,

applying the verify instruction to generate the read pulse, and shifting out the data

for comparison. This process is repeated for each CFM and UFM address.

6. Exit ISP—An exit ISP stage ensures that the I/O pins transition smoothly from ISP

mode to user mode.

MAX II Device Handbook

3–6

Chapter 3: JTAG and In-System Programmability

In System Programmability

Table 3–4 shows the programming times for MAX II devices using in-circuit testers to

execute the algorithm vectors in hardware. Software-based programming tools used

with download cables are slightly slower because of data processing and transfer

limitations.

Table 3–4. MAX II Device Family Programming Times

EPM240

EPM570

EPM570G

EPM570Z

EPM240G

EPM1270

EPM2210

Description

Erase + Program (1 MHz)

Erase + Program (10 MHz)

Verify (1 MHz)

EPM240Z

EPM1270G EPM2210G

Unit

sec

1.72

2.16

1.99

0.17

0.02

2.33

2.01

2.90

2.58

0.30

0.03

3.20

2.61

3.92

3.40

0.49

0.05

4.41

3.45

1.65

0.09

Verify (10 MHz)

0.01

Complete Program Cycle (1 MHz)

Complete Program Cycle (10 MHz)

1.81

1.66

UFM Programming

The Quartus II software, with the use of POF, Jam, or JBC files, supports

programming of the user flash memory (UFM) block independent of the logic array

design pattern stored in the CFM block. This allows updating or reading UFM

contents through ISP without altering the current logic array design, or vice versa. By

default, these programming files and methods will program the entire flash memory

contents, which includes the CFM block and UFM contents. The stand-alone

embedded Jam STAPL player and Jam Byte-Code Player provides action commands

for programming or reading the entire flash memory (UFM and CFM together) or

each independently.

f

For more information, refer to the Using Jam STAPL for ISP via an Embedded Processor

chapter in the MAX II Device Handbook.

In-System Programming Clamp

By default, the IEEE 1532 instruction used for entering ISP automatically tri-states all

I/O pins with weak pull-up resistors for the duration of the ISP sequence. However,

some systems may require certain pins on MAX II devices to maintain a specific DC

logic level during an in-field update. For these systems, an optional in-system

programming clamp instruction exists in MAX II circuitry to control I/O behavior

during the ISP sequence. The in-system programming clamp instruction enables the

device to sample and sustain the value on an output pin (an input pin would remain

tri-stated if sampled) or to explicitly set a logic high, logic low, or tri-state value on

any pin. Setting these options is controlled on an individual pin basis using the

Quartus II software.

f

For more information, refer to the Real-Time ISP and ISP Clamp for MAX II Devices

chapter in the MAX II Device Handbook.

MAX II Device Handbook

Chapter 3: JTAG and In-System Programmability

3–7

Referenced Documents

Real-Time ISP

For systems that require more than DC logic level control of I/O pins, the real-time

ISP feature allows you to update the CFM block with a new design image while the

current design continues to operate in the SRAM logic array and I/O pins. A new

programming file is updated into the MAX II device without halting the original

design’s operation, saving down-time costs for remote or field upgrades. The updated

CFM block configures the new design into the SRAM upon the next power cycle. It is

also possible to execute an immediate configuration of the SRAM without a power

cycle by using a specific sequence of ISP commands. The configuration of SRAM

without a power cycle takes a specific amount of time (t_CONFIG). During this time, the

I/O pins are tri-stated and weakly pulled-up to V_CCIO

.

Design Security

All MAX II devices contain a programmable security bit that controls access to the

data programmed into the CFM block. When this bit is programmed, design

programming information, stored in the CFM block, cannot be copied or retrieved.

This feature provides a high level of design security because programmed data within

flash memory cells is invisible. The security bit that controls this function, as well as

all other programmed data, is reset only when the device is erased. The SRAM is also

invisible and cannot be accessed regardless of the security bit setting. The UFM block

data is not protected by the security bit and is accessible through JTAG or logic array

connections.

Programming with External Hardware

MAX II devices can be programmed by downloading the information via in-circuit

®

testers, embedded processors, the Altera ByteblasterMV™, MasterBlaster™,

ByteBlaster™ II, and USB-Blaster cables.

BP Microsystems, System General, and other programming hardware manufacturers

provide programming support for Altera devices. Check their websites for device

support information.

Referenced Documents

This chapter references the following documents:

■

DC and Switching Characteristics chapter in the MAX II Device Handbook

IEEE 1149.1 (JTAG) Boundary-Scan Testing for MAX II Devices chapter in the MAX II

Device Handbook

■

Real-Time ISP and ISP Clamp for MAX II Devices chapter in the MAX II Device

Handbook

Using Jam STAPL for ISP via an Embedded Processor chapter in the MAX II Device

Handbook

MAX II Device Handbook

3–8

Chapter 3: JTAG and In-System Programmability

Document Revision History

Table 3–5 shows the revision history for this chapter.

Table 3–5. Document Revision History

Date and Revision Changes Made

Summary of Changes

October 2008,

version 1.6

■ Updated New Document Format.

—

December 2007,

version 1.5

■ Added warning note after Table 3–1.

■ Updated Table 3–3 and Table 3–4.

■ Added “Referenced Documents” section.

■ Added document revision history.

—

December 2006,

version 1.4

—

June 2005,

version 1.3

■ Added text and Table 3-4.

June 2005,

version 1.3

■ Updated text on pages 3-5 to 3-8.

■ Corrected Figure 3-1. Added CFM acronym.

June 2004,

version 1.1

MAX II Device Handbook

4. Hot Socketing and Power-On Reset in

MAX II Devices

MII51004-2.1

Introduction

®

MAX II devices offer hot socketing, also known as hot plug-in or hot swap, and

power sequencing support. Designers can insert or remove a MAX II board in a

system during operation without undesirable effects to the system bus. The hot

socketing feature removes some of the difficulties designers face when using

components on printed circuit boards (PCBs) that contain a mixture of 3.3-, 2.5-, 1.8-,

and 1.5-V devices.

The MAX II device hot socketing feature provides:

■

Board or device insertion and removal

Support for any power-up sequence

Non-intrusive I/O buffers to system buses during hot insertion

This chapter contains the following sections:

■

“MAX II Hot-Socketing Specifications” on page 4–1

“Power-On Reset Circuitry” on page 4–5

■

MAX II Hot-Socketing Specifications

MAX II devices offer all three of the features required for the hot-socketing capability

listed above without any external components or special design requirements. The

following are hot-socketing specifications:

■

The device can be driven before and during power-up or power-down without

any damage to the device itself.

I/O pins remain tri-stated during power-up. The device does not drive out before

or during power-up, thereby affecting other buses in operation.

Signal pins do not drive the V_CCIOor V_CCINTpower supplies. External input signals

to device I/O pins do not power the device V_CCIOor V_CCINTpower supplies via

internal paths. This is true if the V_CCINTand the V_CCIOsupplies are held at GND.

1

Altera uses GNDas reference for the hot-socketing and I/O buffers circuitry designs.

You must connect the GNDbetween boards before connecting the V_CCINTand the V_CCIO

power supplies to ensure device reliability and compliance to the hot-socketing

specifications.

Devices Can Be Driven before Power-Up

Signals can be driven into the MAX II device I/O pins and GCLK[3..0]pins before

or during power-up or power-down without damaging the device. MAX II devices

support any power-up or power-down sequence (V_CCIO1, V_CCIO2, V_CCIO3, V_CCIO4, V_CCINT),

simplifying the system-level design.

MAX II Device Handbook

4–2

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

Hot Socketing Feature Implementation in MAX II Devices

I/O Pins Remain Tri-Stated during Power-Up

A device that does not support hot-socketing may interrupt system operation or cause

contention by driving out before or during power-up. In a hot socketing situation, the

MAX II device’s output buffers are turned off during system power-up. MAX II

devices do not drive out until the device attains proper operating conditions and is

fully configured. Refer to “Power-On Reset Circuitry” on page 4–5 for information

about turn-on voltages.

Signal Pins Do Not Drive the V_CCIOor V_CCINTPower Supplies

MAX II devices do not have a current path from I/O pins or GCLK[3..0]pins to the

_CCIOor V_CCINTpins before or during power-up. A MAX II device may be inserted into

V

(or removed from) a system board that was powered up without damaging or

interfering with system-board operation. When hot socketing, MAX II devices may

have a minimal effect on the signal integrity of the backplane.

AC and DC Specifications

You can power up or power down the V_CCIOand V_CCINTpins in any sequence. During

hot socketing, the I/O pin capacitance is less than 8 pF. MAX II devices meet the

following hot socketing specifications:

■

The hot socketing DC specification is: | I_IOPIN| < 300 μA.

■

The hot socketing AC specification is: | I_IOPIN| < 8 mA for 10 ns or less.

1

MAX II devices are immune to latch-up when hot socketing. If the TCKJTAG input

pin is driven high during hot socketing, the current on that pin might exceed the

specifications above.

I

_IOPINis the current at any user I/O pin on the device. The AC specification applies

when the device is being powered up or powered down. This specification takes into

account the pin capacitance but not board trace and external loading capacitance.

Additional capacitance for trace, connector, and loading must be taken into

consideration separately. The peak current duration due to power-up transients is

10 ns or less.

The DC specification applies when all V_CCsupplies to the device are stable in the

powered-up or powered-down conditions.

Hot Socketing Feature Implementation in MAX II Devices

The hot socketing feature turns off (tri-states) the output buffer during the power-up

event (either V_CCINTor V_CCIOsupplies) or power-down event. The hot-socket circuit

generates an internal HOTSCKTsignal when either V_CCINTor V_CCIOis below the

threshold voltage during power-up or power-down. The HOTSCKT signal cuts off the

output buffer to make sure that no DC current (except for weak pull-up leaking) leaks

through the pin. When V_CCramps up very slowly during power-up, V_CCmay still be

relatively low even after the power-on reset (POR) signal is released and device

configuration is complete.

MAX II Device Handbook

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

4–3

Hot Socketing Feature Implementation in MAX II Devices

1

Make sure that the V_CCINTis within the recommended operating range even though

SRAM download has completed.

Each I/O and clock pin has the circuitry shown in Figure 4–1.

Figure 4–1. Hot Socketing Circuit Block Diagram for MAX II Devices

Power On

Reset

Monitor

V_CCIO

Weak

Pull-Up

Resistor

Output Enable

PAD

Voltage

Hot Socket

Tolerance

Control

Input Buffer

to Logic Array

The POR circuit monitors V_CCINTand V_CCIOvoltage levels and keeps I/O pins tri-stated

until the device has completed its flash memory configuration of the SRAM logic. The

weak pull-up resistor (R) from the I/O pin to V_CCIOis enabled during download to

keep the I/O pins from floating. The 3.3-V tolerance control circuit permits the I/O

pins to be driven by 3.3 V before V_CCIOand/or V_CCINTare powered, and it prevents the

I/O pins from driving out when the device is not fully powered or operational. The

hot socket circuit prevents I/O pins from internally powering V_CCIOand V_CCINTwhen

driven by external signals before the device is powered.

f

For information about 5.0-V tolerance, refer to the Using MAX II Devices in Multi-

Voltage Systems chapter in the MAX II Device Handbook.

Figure 4–2 shows a transistor-level cross section of the MAX II device I/O buffers.

This design ensures that the output buffers do not drive when V_CCIOis powered before

V

_CCINTor if the I/O pad voltage is higher than V_CCIO. This also applies for sudden

voltage spikes during hot insertion. The V_PADleakage current charges the 3.3-V

tolerant circuit capacitance.

MAX II Device Handbook

4–4

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

Hot Socketing Feature Implementation in MAX II Devices

Figure 4–2. Transistor-Level Diagram of MAX II Device I/O Buffers

Ensures 3.3-V

VPAD

Tolerance and

Hot-Socket

Protection

IOE Signal or the

Larger of VCCIO or VPAD

The Larger of

VCCIO or VPAD

IOE Signal

VCCIO

p+

n+

p+

n+

n -well

p -well

p -substrate

The CMOS output drivers in the I/O pins intrinsically provide electrostatic discharge

(ESD) protection. There are two cases to consider for ESD voltage strikes: positive

voltage zap and negative voltage zap.

A positive ESD voltage zap occurs when a positive voltage is present on an I/O pin

due to an ESD charge event. This can cause the N+ (Drain)/ P-Substrate junction of

the N-channel drain to break down and the N+ (Drain)/P-Substrate/N+ (Source)

intrinsic bipolar transistor turn on to discharge ESD current from I/O pin to GND.

The dashed line (see Figure 4–3) shows the ESD current discharge path during a

positive ESD zap.

Figure 4–3. ESD Protection During Positive Voltage Zap

I/O

Source

D

Gate

PMOS

N+

Drain

P-Substrate

G

I/O

Drain

S

Gate

N+

NMOS

Source

GND

MAX II Device Handbook

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

4–5

Power-On Reset Circuitry

When the I/O pin receives a negative ESD zap at the pin that is less than –0.7 V (0.7 V

is the voltage drop across a diode), the intrinsic

P-Substrate/N+ drain diode is forward biased. Therefore, the discharge ESD current

path is from GND to the I/O pin, as shown in Figure 4–4.

Figure 4–4. ESD Protection During Negative Voltage Zap

I/O

Source

D

Gate

PMOS

N+

Drain

P-Substrate

G

I/O

S

Gate

N+

NMOS

Source

GND

Power-On Reset Circuitry

MAX II devices have POR circuits to monitor V_CCINTand V_CCIOvoltage levels during

power-up. The POR circuit monitors these voltages, triggering download from the

non-volatile configuration flash memory (CFM) block to the SRAM logic, maintaining

tri-state of the I/O pins (with weak pull-up resistors enabled) before and during this

process. When the MAX II device enters user mode, the POR circuit releases the I/O

pins to user functionality. The POR circuit of the MAX II (except MAX IIZ) device

continues to monitor the V_CCINTvoltage level to detect a brown-out condition. The

POR circuit of the MAX IIZ device does not monitor the V_CCINTvoltage level after the

device enters into user mode. More details are provided in the following sub-sections.

MAX II Device Handbook

4–6

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

Power-On Reset Circuitry

Power-Up Characteristics

When power is applied to a MAX II device, the POR circuit monitors V_CCINTand

begins SRAM download at an approximate voltage of 1.7 V or 1.55 V for MAX IIG and

MAX IIZ devices. From this voltage reference, SRAM download and entry into user

mode takes 200 to 450 µs maximum, depending on device density. This period of time

is specified as t_CONFIGin the power-up timing section of the DC and Switching

Characteristics chapter in the MAX II Device Handbook.

Entry into user mode is gated by whether all V_CCIObanks are powered with sufficient

operating voltage. If V_CCINT and V_CCIOare powered simultaneously, the device enters

user mode within the t_CONFIGspecifications. If V_CCIOis powered more than t_CONFIGafter

V

_CCINT, the device does not enter user mode until 2 µs after all V_CCIObanks are powered.

For MAX II and MAX IIG devices, when in user mode, the POR circuitry continues to

monitor the V_CCINT(but not V_CCIO) voltage level to detect a brown-out condition. If

there is a V_CCINTvoltage sag at or below 1.4 V during user mode, the POR circuit resets

the SRAM and tri-states the I/O pins. Once V_CCINTrises back to approximately 1.7 V

(or 1.55 V for MAX IIG devices), the SRAM download restarts and the device begins

to operate after t_CONFIGtime has passed.

For MAX IIZ devices, the POR circuitry does not monitor the V_CCINTand V_CCIOvoltage

levels after the device enters user mode. If there is a V_CCINTvoltage sag below 1.4 V

during user mode, the functionality of the device will not be guaranteed and you

must power down the V_CCINTto 0 V for a minimum of 10 µs before powering the V_CCINT

and V_CCIOup again. Once V_CCINTrises from 0 V back to approximately 1.55 V, the

SRAM download restarts and the device begins to operate after t_CONFIGtime has

passed.

Figure 4–5 shows the voltages for POR of MAX II, MAX IIG, and MAX IIZ devices

during power-up into user mode and from user mode to power-down or brown-out.

1

All V_CCINTand V_CCIOpins of all banks must be powered on MAX II devices before

entering user mode.

MAX II Device Handbook

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

4–7

Power-On Reset Circuitry

Figure 4–5. Power-Up Characteristics for MAX II, MAX IIG, and MAX IIZ Devices (Note 1), (2)

MAX II Device

V

3.3 V

2.5 V

CCINT

Approximate Voltage

for SRAM Download Start

Device Resets

the SRAM and

Tri-States I/O Pins

1.7 V

1.4 V

t

CONFIG

0 V

User Mode

Operation

Tri-State

MAX IIG Device

V

CCINT

3.3 V

Approximate Voltage

for SRAM Download Start

Device Resets

the SRAM and

Tri-States I/O Pins

1.8 V

1.55 V

1.4 V

t

CONFIG

0 V

User Mode

Operation

Tri-State

MAX IIZ Device

V

CCINT

3.3 V

V

must be powered down

to 0 V if the V

dips below this level

CCINT

Approximate Voltage

for SRAM Download Start

CCINT

1.8 V

1.55 V

1.4 V

t

minimum 10 µs

t

CONFIG

0 V

User Mode

Operation

User Mode

Operation

Tri-State

Notes to Figure 4–5:

(1) Time scale is relative.

(2) Figure 4–5 assumes all V_CCIObanks power up simultaneously with the V_CCINTprofile shown. If not, t_CONFIGstretches out until all V_CCIObanks are powered.

1

After SRAM configuration, all registers in the device are cleared and released into

user function before I/O tri-states are released. To release clears after tri-states are

released, use the DEV_CLRnpin option. To hold the tri-states beyond the power-up

configuration time, use the DEV_OE pin option.

MAX II Device Handbook

4–8

Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices

Referenced Documents

This chapter refereces the following documents:

■

DC and Switching Characteristics chapter in the MAX II Device Handbook

Using MAX II Devices in Multi-Voltage Systems chapter in the MAX II Device

Handbook

Document Revision History

Table 4–1 shows the revision history for this chapter.

Table 4–1. Document Revision History

Date and Revision

October 2008,

version2.1

Changes Made

Summary of Changes

■ Updated “MAX II Hot-Socketing Specifications” and “Power-On

—

Reset Circuitry” sections.

■ Updated New Document Format.

December 2007,

version 2.0

■ Updated “Hot Socketing Feature Implementation in MAX II

Updated document with

MAX IIZ information.

Devices” section.

■ Updated “Power-On Reset Circuitry” section.

■ Updated Figure 4–5.

■ Added “Referenced Documents” section.

■ Added document revision history.

December 2006,

version 1.5

—

February 2006,

version 1.4

■ Updated “MAX II Hot-Socketing Specifications” section.

■ Updated “AC and DC Specifications” section.

■ Updated “Power-On Reset Circuitry” section.

■ Updated AC and DC specifications on page 4-2.

June 2005,

version 1.3

—

December 2004,

version 1.2

■ Added content to Power-Up Characteristics section.

■ Updated Figure 4-5.

June 2004,

version 1.1

■ Corrected Figure 4-2.

—

MAX II Device Handbook

5. DC and Switching Characteristics

MII51005-2.4

Introduction

System designers must consider the recommended DC and switching conditions

discussed in this chapter to maintain the highest possible performance and reliability

of the MAX II devices. This chapter contains the following sections:

®

■

“Operating Conditions” on page 5–1

“Power Consumption” on page 5–8

“Timing Model and Specifications” on page 5–8

Operating Conditions

Table 5–1 through Table 5–12 provide information about absolute maximum ratings,

recommended operating conditions, DC electrical characteristics, and other

specifications for MAX II devices.

Absolute Maximum Ratings

Table 5–1 shows the absolute maximum ratings for the MAX II device family.

Table 5–1. MAX II Device Absolute Maximum Ratings (Note 1), (2)

Symbol

V_CCINT

Parameter

Internal supply voltage (3)

I/O supply voltage

Conditions

Minimum

–0.5

–25

Maximum

4.6

Unit

V

With respect to ground

V_CCIO

V_I

—

4.6

V

DC input voltage

—

4.6

V

I_OUT

T_STG

T_AMB

T_J

DC output current, per pin (4)

Storage temperature

Ambient temperature

Junction temperature

25

mA

°C

No bias

–65

150

135

Under bias (5)

–65

TQFP and BGA packages

under bias

—

Notes to Table 5–1:

(1) Refer to the Operating Requirements for Altera Devices Data Sheet.

(2) Conditions beyond those listed in Table 5–1 may cause permanent damage to a device. Additionally, device operation at the absolute maximum

ratings for extended periods of time may have adverse affects on the device.

(3) Maximum V_CCINTfor MAX II devices is 4.6 V. For MAX IIG and MAX IIZ devices, it is 2.4 V.

(4) Refer to AN 286: Implementing LED Drivers in MAX & MAX II Devices for more information about the maximum source and sink current for

MAX II devices.

(5) Refer to Table 5–2 for information about “under bias” conditions.

MAX II Device Handbook

5–2

Chapter 5: DC and Switching Characteristics

Operating Conditions

Recommended Operating Conditions

Table 5–2 shows the MAX II device family recommended operating conditions.

Table 5–2. MAX II Device Recommended Operating Conditions

Symbol

Parameter

Conditions

MAX II devices

Minimum

Maximum

Unit

V_CCINT(1)

3.3-V supply voltage for internal logic and

ISP

3.00

3.60

V

2.5-V supply voltage for internal logic and

ISP

MAX II devices

2.375

1.71

2.625

1.89

V

1.8-V supply voltage for internal logic and

ISP

MAX IIG and MAX IIZ

devices

V_CCIO(1)

Supply voltage for I/O buffers, 3.3-V

operation

—

3.00

3.60

Supply voltage for I/O buffers, 2.5-V

operation

2.375

1.71

2.625

1.89

Supply voltage for I/O buffers, 1.8-V

operation

Supply voltage for I/O buffers, 1.5-V

operation

1.425

1.575

V_I

Input voltage

(2), (3), (4)

—

–0.5

0

4.0

V_CCIO

85

V

V_O

T_J

Output voltage

V

Operating junction temperature

Commercial range (5)

Industrial range

Extended range (6)

0

°C

–40

100

125

Notes to Table 5–2:

(1) MAX II device in-system programming and/or user flash memory (UFM) programming via JTAG or logic array is not guaranteed outside the

recommended operating conditions (for example, if brown-out occurs in the system during a potential write/program sequence to the UFM,

users are recommended to read back UFM contents and verify against the intended write data).

(2) Minimum DC input is –0.5 V. During transitions, the inputs may undershoot to –2.0 V for input currents less than 100 mA and periods shorter

than 20 ns.

(3) During transitions, the inputs may overshoot to the voltages shown in the following table based upon input duty cycle. The DC case is equivalent

to 100% duty cycle. For more information about 5.0-V tolerance, refer to the Using MAX II Devices in Multi-Voltage Systems chapter in the MAX

II Device Handbook.

V_IN

Max. Duty Cycle

4.0 V 100% (DC)

4.1

4.2

4.3

4.4

4.5

90%

50%

30%

17%

10%

(4) All pins, including clock, I/O, and JTAG pins, may be driven before V_CCINTand V_CCIOare powered.

(5) MAX IIZ devices are only available in the commercial temperature range.

(6) For the extended temperature range of 100 to 125º C, MAX II UFM programming (erase/write) is only supported via the JTAG interface. UFM

programming via the logic array interface is not guaranteed in this range.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–3

Operating Conditions

Programming/Erasure Specifications

Table 5–3 shows the MAX II device family programming/erasure specifications.

Table 5–3. MAX II Device Programming/Erasure Specifications

Parameter

Erase and reprogram cycles

Note to Table 5–3:

Minimum

Typical

Maximum

Unit

—

100 (1)

Cycles

(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.

DC Electrical Characteristics

Table 5–4 shows the MAX II device family DC electrical characteristics.

Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 1 of 2)

Symbol

Parameter

Conditions

Minimum Typical Maximum

Unit

I_I

Input pin leakage

current

V_I= V_CCIOmax to 0 V (2)

–10

—

10

µA

I_OZ

Tri-stated I/O pin

leakage current

V_O= V_CCIOmax to 0 V (2)

–10

—

10

µA

I_CCSTANDBY

V_CCINTsupply current

(standby) (3)

MAX II devices

MAX IIG devices

EPM240Z

—

12

2

—

mA

µA

29

32

400

190

55

40

150

210

—

EPM570Z

µA

V_SCHMITT(4)

Hysteresis for Schmitt V_CCIO= 3.3 V

trigger input (5)

mV

mA

V

_CCIO= 2.5 V

—

I_CCPOWERUP

V_CCINTsupply current

during power-up (6)

MAX II devices

—

MAX IIG and MAX IIZ

devices

—

R_PULLUP

Value of I/O pin pull-up V_CCIO= 3.3 V (7)

5

—

25

40

60

95

kΩ

resistor during user

V

_CCIO= 2.5 V (7)

_CCIO= 1.8 V (7)

_CCIO= 1.5 V (7)

10

25

45

mode and in-system

programming

MAX II Device Handbook

5–4

Chapter 5: DC and Switching Characteristics

Operating Conditions

Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 2 of 2)

Symbol

I_PULLUP

Parameter

Conditions

Minimum Typical Maximum

Unit

I/O pin pull-up resistor

current when I/O is

unprogrammed

—

300

µA

C_IO

Input capacitance for

user I/O pin

—

8

pF

C_GCLK

Input capacitance for

dual-purpose

GCLK/user I/O pin

Notes to Table 5–4:

(1) Typical values are for T_A= 25 °C, V_CCINT= 3.3 or 2.5 V, and V_CCIO= 1.5 V, 1.8 V, 2.5 V, or 3.3 V.

(2) This value is specified for normal device operation. The value may vary during power-up. This applies for all V_CCIOsettings (3.3, 2.5,

1.8, and 1.5 V).

(3) V_I= ground, no load, no toggling inputs.

(4) This value applies to commercial and industrial range devices. For extended temperature range devices, the V_SCHMITTtypical value is

300 mV for V_CCIO= 3.3 V and 120 mV for V_CCIO= 2.5 V.

(5) The TCKinput is susceptible to high pulse glitches when the input signal fall time is greater than 200 ns for all I/O standards.

(6) This is a peak current value with a maximum duration of t_CONFIGtime.

(7) Pin pull-up resistance values will lower if an external source drives the pin higher than V_CCIO

.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–5

Operating Conditions

Output Drive Characteristics

Figure 5–1 shows the typical drive strength characteristics of MAX II devices.

Figure 5–1. Output Drive Characteristics of MAX II Devices

MAX II Output Drive I_OHCharacteristics

MAX II Output Drive I_OLCharacteristics

(Maximum Drive Strength)

60

50

40

30

20

10

0

70

3.3-V VCCIO

60

50

2.5-V VCCIO

40

30

1.8-V VCCIO

1.5-V VCCIO

1.8-V VCCIO

20

1.5-V VCCIO

10

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Voltage (V)

MAX II Output Drive I_OLCharacteristics

(Minimum Drive Strength)

MAX II Output Drive I_OHCharacteristics

(Minimum Drive Strength)

30

25

20

15

10

5

35

3.3-V VCCIO

30

25

20

15

10

5

2.5-V VCCIO

1.8-V VCCIO

1.5-V VCCIO

1.8-V VCCIO

1.5-V VCCIO

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Voltage (V)

Note to Figure 5–1:

(1) The DC output current per pin is subject to the absolute maximum rating of Table 5–1.

I/O Standard Specifications

Table 5–5 through Table 5–10 show the MAX II device family I/O standard

specifications.

Table 5–5. 3.3-V LVTTL Specifications

Symbol

V_CCIO

Parameter

Conditions

Minimum

3.0

Maximum

3.6

Unit

V

I/O supply voltage

—

V_IH

V_IL

High-level input voltage

Low-level input voltage

1.7

4.0

V

–0.5

2.4

0.8

V

V_OH

V_OL

High-level output voltage IOH = –4 mA (1)

Low-level output voltage IOL = 4 mA (1)

—

V

—

0.45

V

Table 5–6. 3.3-V LVCMOS Specifications (Part 1 of 2)

Symbol

V_CCIO

Parameter

Conditions

Minimum

3.0

Maximum

3.6

Unit

V

I/O supply voltage

—

V_IH

V_IL

High-level input voltage

Low-level input voltage

1.7

4.0

V

–0.5

0.8

V

MAX II Device Handbook

5–6

Chapter 5: DC and Switching Characteristics

Operating Conditions

Table 5–6. 3.3-V LVCMOS Specifications (Part 2 of 2)

Symbol

V_OH

Parameter

Conditions

Minimum

Maximum

Unit

High-level output voltage

V_CCIO= 3.0,

IOH = –0.1 mA (1)

V_CCIO– 0.2

—

V

V_OL

Low-level output voltage

V_CCIO= 3.0,

IOL = 0.1 mA (1)

—

0.2

V

Table 5–7. 2.5-V I/O Specifications

Symbol

V_CCIO

Parameter

Conditions

—

Minimum

2.375

1.7

Maximum

2.625

4.0

Unit

V

I/O supply voltage

V_IH

V_IL

V_OH

High-level input voltage

Low-level input voltage

High-level output voltage

—

V

—

–0.5

2.1

0.7

V

IOH = –0.1 mA (1)

IOH = –1 mA (1)

IOH = –2 mA (1)

IOL = 0.1 mA (1)

IOL = 1 mA (1)

IOL = 2 mA (1)

—

V

2.0

—

V

1.7

—

V

V_OL

Low-level output voltage

—

0.2

V

—

0.4

V

—

0.7

V

Table 5–8. 1.8-V I/O Specifications

Symbol

V_CCIO

Parameter

Conditions

Minimum

1.71

Maximum

1.89

Unit

V

I/O supply voltage

—

V_IH

V_IL

High-level input voltage

Low-level input voltage

High-level output voltage

Low-level output voltage

0.65 × V_CCIO

–0.3

2.25 (2)

0.35 × V_CCIO

—

V

—

V

V_OH

V_OL

IOH = –2 mA (1)

IOL = 2 mA (1)

V_CCIO– 0.45

—

V

0.45

V

Table 5–9. 1.5-V I/O Specifications

Symbol

V_CCIO

Parameter

Conditions

Minimum

1.425

Maximum

1.575

Unit

V

I/O supply voltage

—

V_IH

V_IL

High-level input voltage

Low-level input voltage

High-level output voltage

Low-level output voltage

0.65 × V_CCIO

–0.3

V_CCIO+ 0.3 (2)

0.35 × V_CCIO

—

V

—

V

V_OH

V_OL

IOH = –2 mA (1)

IOL = 2 mA (1)

0.75 × V_CCIO

—

V

0.25 × V_CCIO

V

Notes to Table 5–5 through Table 5–9:

(1) This specification is supported across all the programmable drive strength settings available for this I/O standard, as shown

in the MAX II Architecture chapter (I/O Structure section) in the MAX II Device Handbook.

(2) This maximum V_IHreflects the JEDEC specification. The MAX II input buffer can tolerate a V_IHmaximum of 4.0, as specified

by the V_Iparameter in Table 5–2.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–7

Operating Conditions

Table 5–10. 3.3-V PCI Specifications (Note 1)

Symbol

V_CCIO

Parameter

Conditions

Minimum

Typical

Maximum

Unit

I/O supply

voltage

—

3.0

3.3

3.6

V

V_IH

V_IL

High-level input

voltage

—

0.5 × V_CCIO

–0.5

—

V_CCIO+ 0.5

0.3 × V_CCIO

—

V

Low-level input

voltage

—

V_OH

V_OL

High-level

output voltage

IOH = –500 µA

IOL = 1.5 mA

0.9 × V_CCIO

—

Low-level

0.1 × V_CCIO

output voltage

Note to Table 5–10:

(1) 3.3-V PCI I/O standard is only supported in Bank 3 of the EPM1270 and EPM2210 devices.

Bus Hold Specifications

Table 5–11 shows the MAX II device family bus hold specifications.

Table 5–11. Bus Hold Specifications

V_CCIOLevel

1.8 V 2.5 V

Min Max Min Max Min Max Min Max Unit

1.5 V

3.3 V

Parameter

Conditions

Low sustaining

current

V_IN> V_IL(maximum)

20

–20

—

30

–30

—

50

–50

—

70

–70

—

µA

High sustaining

current

V_IN< V_IH(minimum)

0 V < V_IN< V_CCIO

—

Low overdrive

current

160

–160

200

–200

300

–300

500

High overdrive

current

0 V < V_IN< V_CCIO

—

–500 µA

MAX II Device Handbook

5–8

Chapter 5: DC and Switching Characteristics

Power Consumption

Power-Up Timing

Table 5–12 shows the power-up timing characteristics for MAX II devices.

Table 5–12. MAX II Power-Up Timing

Symbol

Parameter

Device

EPM240

EPM570

EPM1270

EPM2210

Min

—

Typ

—

Max

200

300

450

Unit

µs

t_CONFIG(1)

The amount of time from when

minimum V_CCINTis reached until

the device enters user mode (2)

—

µs

—

µs

—

µs

Notes to Table 5–12:

(1) Table 5–12 values apply to commercial and industrial range devices. For extended temperature range devices, the t_CONFIGmaximum values are

as follows:

Device

Maximum

300 µs

400 µs

500 µs

EPM240

EPM570

EPM1270

EPM2210

(2) For more information about POR trigger voltage, refer to the Hot Socketing and Power-On Reset in MAX II Devices chapter in the MAX II Device

Handbook.

Power Consumption

®

Designers can use the Altera PowerPlay Early Power Estimator and PowerPlay

Power Analyzer to estimate the device power.

f

For more information about these power analysis tools, refer to the Understanding and

Evaluating Power in MAX II Devices chapter in the MAX II Device Handbook and the

PowerPlay Power Analysis chapter in volume 3 of the Quartus II Handbook.

Timing Model and Specifications

®

MAX II devices timing can be analyzed with the Altera Quartus II software, a variety

of popular industry-standard EDA simulators and timing analyzers, or with the

timing model shown in Figure 5–2.

MAX II devices have predictable internal delays that enable the designer to determine

the worst-case timing of any design. The software provides timing simulation, point-

to-point delay prediction, and detailed timing analysis for device-wide performance

evaluation.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–9

Timing Model and Specifications

Figure 5–2. MAX II Device Timing Model

Output and Output Enable

Data Delay

t_R4

t_IODR

t_IOE

Data-In/LUT Chain

Output Routing

User

Flash

Memory

Logic Element

LUT Delay

Output

Delay

t_OD

t_XZ

t_ZX

t_C4

Delay

t_LUT

t_COMB

t_FASTIO

t_CO

t_SU

t_H

t_PRE

t_CLR

Input Routing

Delay

I/O Input Delay

Register Control

Delay

I/O Pin

t_IN

t_DL

t_C

From Adjacent LE

t_GLOB

INPUT

Combinational Path Delay

I/O Pin

Global Input Delay

To Adjacent LE

Register Delays

Data-Out

The timing characteristics of any signal path can be derived from the timing model

and parameters of a particular device. External timing parameters, which represent

pin-to-pin timing delays, can be calculated as the sum of internal parameters.

f

Refer to the Understanding Timing in MAX II Devices chapter in the MAX II Device

Handbook for more information.

This section describes and specifies the performance, internal, external, and UFM

timing specifications. All specifications are representative of the worst-case supply

voltage and junction temperature conditions.

Preliminary and Final Timing

®

Timing models can have either preliminary or final status. The Quartus II software

issues an informational message during the design compilation if the timing models

are preliminary. Table 5–13 shows the status of the MAX II device timing models.

Preliminary status means the timing model is subject to change. Initially, timing

numbers are created using simulation results, process data, and other known

parameters. These tests are used to make the preliminary numbers as close to the

actual timing parameters as possible.

Final timing numbers are based on actual device operation and testing. These

numbers reflect the actual performance of the device under the worst-case voltage

and junction temperature conditions.

Table 5–13. MAX II Device Timing Model Status

Device

EPM240

Preliminary

Final

v

—

v

—

v

EPM240Z (1)

EPM570

—

v

EPM570Z (1)

—

MAX II Device Handbook

5–10

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Table 5–13. MAX II Device Timing Model Status

Device

EPM1270

Preliminary

Final

v

—

EPM2210

v

Note to Table 5–13:

(1) The MAX IIZ device timing models are only available in the Quartus II software version

8.0 and later.

Performance

Table 5–14 shows the MAX II device performance for some common designs. All

performance values were obtained with the Quartus II software compilation of

megafunctions. Performance values for –3, –4, and –5 speed grades are based on an

EPM1270 device target while –6 and –7 speed grades are based on an EPM570Z device

target.

Table 5–14. MAX II Device Performance

Resources Used

Performance

–5

–3

–4

–6

–7

Resource

Used

Design Size and

Function

UFM

Speed Speed Speed Speed

Speed

Mode

LEs

16

64

11

24

5

Blocks Grade

Grade

247.5

154.8

8.0

Grade

201.1

125.8

9.3

Grade

184.1

83.2

17.4

12.5

9.0

Grade Unit

LE

16-bit counter (1)

64-bit counter (1)

16-to-1 multiplexer

32-to-1 multiplexer

16-bit XOR function

—

0

304.0

201.5

6.0

123.5 MHz

83.2

17.3

22.8

15.0

MHz

ns

7.1

9.0

11.4

8.2

ns

5.1

6.6

ns

16-bit decoder with

single address line

5

5.2

6.6

8.2

9.2

ns

UFM

512 × 16

512 × 8

None

SPI (2)

3

1

10.0

8.0

10.0

8.0

10.0

8.0

10.0

9.7

10.0

9.7

MHz

37

Parallel (3)

73

(4)

2

512 × 16

I C (3)

142

100 (5) 100 (5) 100 (5) 100 (5) 100 (5) kHz

Notes to Table 5–14:

(1) This design is a binary loadable up counter.

(2) This design is configured for read-only operation in Extended mode. Read and write ability increases the number of LEs used.

(3) This design is configured for read-only operation. Read and write ability increases the number of LEs used.

(4) This design is asynchronous.

(5) The I²C megafunction is verified in hardware up to 100-kHz serial clock line (SCL) rate.

Internal Timing Parameters

Internal timing parameters are specified on a speed grade basis independent of device

density. Table 5–15 through Table 5–22 describe the MAX II device internal timing

microparameters for logic elements (LEs), input/output elements (IOEs), UFM

structures, and MultiTrack interconnects. The timing values for –3, –4, and –5 speed

grades shown in Table 5–15 through Table 5–22 are based on an EPM1270 device

target, while –6 and –7 speed grade values are based on an EPM570Z device target.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–11

Timing Model and Specifications

f

For more explanations and descriptions about each internal timing microparameters

symbol, refer to the Understanding Timing in MAX II Devices chapter in the MAX II

Device Handbook.

Table 5–15. LE Internal Timing Microparameters

–3 Speed

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

Parameter

Min Max Min Max Min Max Min Max Min Max Unit

t_LUT

LE combinational LUT

delay

—

571

—

742

—

914

—

1,215

—

2,247 ps

t_COMB

t_CLR

t_PRE

t_SU

Combinational path delay

LE register clear delay

LE register preset delay

—

238

208

147

—

309

271

192

—

381

333

236

—

401

260

243

—

541

319

305

—

ps

—

LE register setup time

before clock

—

t_H

LE register hold time after

clock

0

—

235

—

0

—

305

—

0

—

376

—

0

—

380

—

0

—

489

—

ps

t_CO

t_CLKHL

t_C

LE register clock-to-output

delay

—

Minimum clock high or low 166

time

216

—

266

—

253

—

335

—

Register control delay

—

857

1,114

1,372

1,356

1,722 ps

Table 5–16. IOE Internal Timing Microparameters (Part 1 of 2)

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

Parameter

Min Max Min Max

Min Max Min Max Min Max Unit

t_FASTIO

Data output delay from

adjacent LE to I/O block

—

159

—

207

—

254

—

170

—

348

ps

t_IN

I/O input pad and buffer

delay

708

920

1,132

2,430

907

970

ps

t_GLOB(1) I/O input pad and buffer

delay used as global signal

1,519

1,974

2,261

2,670 ps

t_IOE

Internally generated output

enable delay

—

354

—

374

—

460

—

530

—

966

410

ps

t_DL

Input routing delay

—

224

—

291

—

358

—

318

—

t_OD(2)

Output delay buffer and pad

delay

1,064

1,383

1,702

1,319

1,526 ps

MAX II Device Handbook

5–12

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Table 5–16. IOE Internal Timing Microparameters (Part 2 of 2)

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

Parameter

Output buffer disable

delay

Min Max Min Max

Min Max Min Max Min Max Unit

t_XZ(3)

—

756

—

982

—

1,209

—

1,045

—

1,264 ps

t_ZX(4)

Output buffer enable

delay

—

1,003

—

1,303

—

1,604

—

1,160

—

1,325 ps

Notes to Table 5–16:

(1) Delay numbers for t_GLOBdiffer for each device density and speed grade. The delay numbers for t_GLOB, shown in Table 5–16, are based on an

EPM240 device target.

(2) Refer to Table 5–29 and 5–21 for delay adders associated with different I/O standards, drive strengths, and slew rates.

(3) Refer to Table 5–19 and 5–13 for t_XZdelay adders associated with different I/O standards, drive strengths, and slew rates.

(4) Refer to Table 5–17 and 5–12 for t_ZXdelay adders associated with different I/O standards, drive strengths, and slew rates.

Table 5–17 through Table 5–20 show the adder delays for t_ZXand t_XZmicroparameters

when using an I/O standard other than 3.3-V LVTTL with 16 mA drive strength.

Table 5–17. t_ZXIOE Microparameter Adders for Fast Slew Rate

–3 Speed

Grade

–4 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

–5 Speed Grade

Standard

3.3-V LVCMOS

Min

Max

Min

Max

Min

—

Max

0

Min

Max

Min

Max

Unit

ps

8 mA

4 mA

16 mA

8 mA

14 mA

7 mA

6 mA

3 mA

4 mA

2 mA

20 mA

—

0

28

—

0

37

—

0

—

0

45

—

72

0

71

3.3-V LVTTL

2.5-V LVTTL

1.8-V LVTTL

1.5-V LVTTL

3.3-V PCI

0

28

37

45

72

71

14

19

23

75

87

314

450

1,443

1,118

2,410

19

409

585

1,876

1,454

3,133

25

503

720

2,309

1,789

3,856

31

162

279

499

580

915

72

174

289

508

588

923

71

Table 5–18. t_ZXIOE Microparameter Adders for Slow Slew Rate

–3 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

–4 Speed Grade

Standard

3.3-V LVCMOS

Min

Max

Min

—

Max

Min

Max

Min

Max Min

Max Unit

8 mA

4 mA

16 mA

8 mA

—

6,350

9,383

6,350

9,383

6,050

9,083

6,050

9,083

—

5,749

8,782

5,749

8,782

—

5,951

6,534

5,951

6,534

—

5,952

6,533

5,952

6,533

ps

—

3.3-V LVTTL

—

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–13

Timing Model and Specifications

Table 5–18. t_ZXIOE Microparameter Adders for Slow Slew Rate

–3 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

–4 Speed Grade

Standard

2.5-V LVTTL

Min

Max

10,412

13,613

–75

Min

—

Max

10,112

13,313

–97

Min

Max

9,811

13,012

–120

Min

Max Min

Max Unit

14 mA

7 mA

—

9,110

9,830

6,534

—

9,105

9,835

6,533

ps

—

ps

3.3-V PCI

20 mA

—

Table 5–19. t_XZIOE Microparameter Adders for Fast Slew Rate

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Standard

3.3-V LVCMOS

Min

Max

Min

Max

Min

Max

0

Min

Max

Min

Max

Unit

8 mA

4 mA

16 mA

8 mA

14 mA

7 mA

6 mA

3 mA

4 mA

2 mA

20 mA

—

0

—

0

—

0

—

0

ps

–56

0

–72

0

–89

0

–69

0

–69

0

3.3-V LVTTL

2.5-V LVTTL

1.8-V LVTTL

1.5-V LVTTL

3.3-V PCI

–56

–3

–72

–4

–89

–5

–69

–7

–69

–11

–70

34

–47

119

207

606

673

71

–61

155

269

788

875

93

–75

191

331

970

1,077

114

–66

45

34

22

166

190

–69

154

177

–69

Table 5–20. t_XZIOE Microparameter Adders for Slow Slew Rate

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Standard

3.3-V LVCMOS

Min

Max

206

891

206

891

222

943

161

Min

Max

–20

665

–20

665

–4

Min

Max

–247

438

Min

Max

1,433

1,332

1,433

1,332

213

Min

—

Max Unit

8 mA

4 mA

—

1,446

1,345

1,446

1,345

208

ps

3.3-V LVTTL

2.5-V LVTTL

3.3-V PCI

16 mA

8 mA

–247

438

14 mA

7 mA

–231

490

717

210

166

161

20 mA

258

1,332

1,345

®

1

The default slew rate setting for MAX II device in the Quartus II design software is

“fast”.

MAX II Device Handbook

5–14

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Table 5–21. UFM Block Internal Timing Microparameters (Part 1 of 2)

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

t_ACLK

Parameter

Min Max Min Max Min Max Min Max Min Max Unit

Address register clock period

100

20

—

100

20

—

100

20

—

100

20

—

100

20

—

ns

t_ASU

Address register shift signal setup

to address register clock

t_AH

Address register shift signal hold to

address register clock

20

—

20

—

20

—

20

—

20

—

ns

t_ADS

t_ADH

Address register data in setup to

address register clock

Address register data in hold from

address register clock

t_DCLK

t_DSS

Data register clock period

100

60

—

100

60

—

100

60

—

100

60

—

100

60

—

ns

Data register shift signal setup to

data register clock

t_DSH

t_DDS

t_DDH

t_DP

Data register shift signal hold from

data register clock

20

0

—

20

0

—

20

0

—

20

0

—

20

0

—

ns

Data register data in setup to data

register clock

Data register data in hold from data

register clock

—

Program signal to data clock hold

time

—

t_PB

Maximum delay between program

rising edge to UFM busy signal

rising edge

—

960

—

960

—

960

—

960

—

960 ns

t_BP

Minimum delay allowed from UFM

busy signal going low to program

signal going low

20

—

20

—

20

—

20

—

20

—

ns

t_PPMX

t_AE

Maximum length of busy pulse

during a program

—

0

100

—

0

100

—

0

100

—

0

100

—

0

100 µs

ns

960 ns

Minimum erase signal to address

clock hold time

—

t_EB

Maximum delay between the erase

rising edge to the UFM busy signal

rising edge

—

960

—

960

—

960

—

960

—

t_BE

Minimum delay allowed from the

UFM busy signal going low to erase

signal going low

20

—

20

—

20

—

20

—

20

—

ns

t_EPMX

t_DCO

Maximum length of busy pulse

during an erase

—

500

5

—

500

5

—

500

5

—

500

5

—

500 ms

ns

Delay from data register clock to

data register output

5

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–15

Timing Model and Specifications

Table 5–21. UFM Block Internal Timing Microparameters (Part 2 of 2)

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

t_OE

Parameter

Min Max Min Max Min Max Min Max Min Max Unit

Delay from data register clock to

data register output

180

—

180

—

180

—

180

—

180

—

ns

t_RA

Maximum read access time

—

65

—

65

—

65

—

65

—

65

—

ns

t_OSCS

Maximum delay between the

OSC_ENArising edge to the

erase/program signal rising edge

250

t_OSCH

Minimum delay allowed from the

erase/program signal going low to

OSC_ENAsignal going low

250

—

250

—

250

—

250

—

250

—

ns

MAX II Device Handbook

5–16

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Figure 5–3 through Figure 5–5 show the read, program, and erase waveforms for

UFM block timing parameters shown in Table 5–21.

Figure 5–3. UFM Read Waveforms

ARShft

t_AH

9 Address Bits

t_ACLK

t_ASU

ARClk

ARDin

DRShft

DRClk

t_ADH

t_ADS

16 Data Bits

t_DSH

t_DCLK

t_DSS

t_DCO

DRDin

DRDout

OSC_ENA

Program

Erase

Busy

Figure 5–4. UFM Program Waveforms

9 Address Bits

t_ACLK

ARShft

ARClk

t_AH

t_ADH

t_ASU

ARDin

DRShft

DRClk

DRDin

DRDout

t_ADS

16 Data Bits

t_DCLK

t_DSH

t_DSS

t_DDH

t_DDS

t_OSCH

t_OSCS

OSC_ENA

Program

t_PB

Erase

Busy

t_BP

t_PPMX

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–17

Timing Model and Specifications

Figure 5–5. UFM Erase Waveform

ARShft

t_ASU

ARClk

9 Address Bits

t_ACLK

t_AH

t_ADH

ARDin

t_ADS

DRShft

DRClk

DRDin

DRDout

OSC_ENA

t_OSCS

t_EB

t_OSCH

Program

Erase

t_BE

Busy

t_EPMX

Table 5–22. Routing Delay Internal Timing Microparameters

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Routing

Min

Max

Min

Max

Min

Max

687

521

529

Min

Max

(1)

Min

Max

(1)

Unit

ps

t_C4

t_R4

—

429

326

330

—

556

423

429

—

(1)

ps

t_LOCAL

(1)

ps

Note to Table 5–22:

(1) The numbers will only be available in a later revision.

External Timing Parameters

External timing parameters are specified by device density and speed grade. All

external I/O timing parameters shown are for the 3.3-V LVTTL I/O standard with the

maximum drive strength and fast slew rate. For external I/O timing using standards

other than LVTTL or for different drive strengths, use the I/O standard input and

output delay adders in Table 5–27 through Table 5–28.

f

For more information about each external timing parameters symbol, refer to the

Understanding Timing in MAX II Devices chapter in the MAX II Device Handbook.

MAX II Device Handbook

5–18

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Table 5–23 shows the external I/O timing parameters for EPM240 devices.

Table 5–23. EPM240 Global Clock External I/O Timing Parameters

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

Parameter

Condition Min Max Min Max Min Max Min Max Min Max

Unit

t_PD1

Worst case

pin-to-pin

10 pF

—

4.7

—

6.1

—

7.5

—

7.9

—

12.0

ns

delay through

1 look-up

table (LUT)

t_PD2

Best case pin-

to-pin delay

through

10 pF

—

3.7

—

4.8

—

5.9

—

5.8

—

7.8

ns

1 LUT

t_SU

t_H

Global clock

setup time

—

1.7

0.0

2.0

—

2.2

0.0

2.0

—

2.7

0.0

2.0

—

2.8

0

—

4.7

0

—

ns

Global clock

hold time

t_CO

Global clock

to output

delay

10 pF

4.3

5.6

6.9

2.0

7.7

2.0

10.5

t_CH

t_CL

Global clock

high time

—

166

3.3

—

216

4.0

—

266

5.0

—

253

5.4

—

335

8.1

—

ps

ns

Global clock

low time

t_CNT

Minimum

global clock

period for

16-bit counter

f_CNT

Maximum

—

304.0

(1)

—

247.5

—

201.1

—

184.1

—

123.5 MHz

global clock

frequency for

16-bit counter

Note to Table 5–23:

(1) The maximum frequency is limited by the I/O standard on the clock input pin. The 16-bit counter critical delay performs faster than this global

clock input pin maximum frequency.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–19

Timing Model and Specifications

Table 5–24 shows the external I/O timing parameters for EPM570 devices.

Table 5–24. EPM570 Global Clock External I/O Timing Parameters

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Symbol

Parameter

Condition Min Max Min Max Min

Max

Min Max Min Max Unit

t_PD1

Worst case pin-to-pin

delay through 1 look-

up table (LUT)

10 pF

—

5.4

—

7.0

—

8.7

—

9.5

—

15.1

ns

t_PD2

t_SU

t_H

Best case pin-to-pin

delay through 1 LUT

10 pF

—

1.2

0.0

2.0

166

3.7

—

1.5

0.0

2.0

216

4.8

—

1.9

0.0

2.0

266

5.9

—

2.6

0

5.7

—

4.5

0

7.7

—

ns

ps

Global clock setup

time

Global clock hold

time

—

t_CO

t_CH

Global clock to

output delay

10 pF

—

4.5

—

5.8

—

7.1

—

2.0

253

6.1

—

2.0

335

7.6

—

Global clock high

time

t_CL

Global clock low time

—

166

3.3

—

216

4.0

—

266

5.0

—

253

5.4

—

335

8.1

—

ps

ns

t_CNT

Minimum global

clock period for

16-bit counter

f_CNT

Maximum global

clock frequency for

16-bit counter

—

304.0

(1)

—

247.5

—

201.1

—

184.1

—

123.5 MHz

Note to Table 5–24:

(1) The maximum frequency is limited by the I/O standard on the clock input pin. The 16-bit counter critical delay performs faster than this global clock

input pin maximum frequency.

Table 5–25 shows the external I/O timing parameters for EPM1270 devices.

Table 5–25. EPM1270 Global Clock External I/O Timing Parameters (Part 1 of 2)

–3 Speed Grade

–4 Speed Grade –5 Speed Grade

Symbol

t_PD1

Parameter

Condition

Min

Max

Min

Max

Min

Max

Unit

Worst case pin-to-pin

delay through 1 look-up

table (LUT)

10 pF

—

6.2

—

8.1

—

10.0

ns

t_PD2

Best case pin-to-pin

delay through 1 LUT

10 pF

—

3.7

—

4.8

—

5.9

ns

t_SU

t_H

Global clock setup time

Global clock hold time

—

1.2

0.0

2.0

—

1.5

0.0

2.0

—

1.9

0.0

2.0

—

ns

t_CO

Global clock to output

delay

10 pF

4.6

5.9

7.3

t_CH

t_CL

Global clock high time

Global clock low time

—

166

—

216

—

266

—

ps

MAX II Device Handbook

5–20

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Table 5–25. EPM1270 Global Clock External I/O Timing Parameters (Part 2 of 2)

–3 Speed Grade

–4 Speed Grade –5 Speed Grade

Symbol

t_CNT

Parameter

Condition

Min

Max

Min

Max

Min

Max

Unit

Minimum global clock

period for

—

3.3

—

4.0

—

5.0

—

ns

16-bit counter

f_CNT

Maximum global clock

frequency for 16-bit

counter

—

304.0 (1)

—

247.5

—

201.1

MHz

Note to Table 5–25:

(1) The maximum frequency is limited by the I/O standard on the clock input pin. The 16-bit counter critical delay performs faster than this global

clock input pin maximum frequency.

Table 5–26 shows the external I/O timing parameters for EPM2210 devices.

Table 5–26. EPM2210 Global Clock External I/O Timing Parameters

–3 Speed Grade –4 Speed Grade –5 Speed Grade

Symbol

t_PD1

Parameter

Condition

Min

Max

Min

Max

Min

Max

Unit

Worst case pin-to-pin delay

through 1 look-up table

(LUT)

10 pF

—

7.0

—

9.1

—

11.2

ns

t_PD2

Best case pin-to-pin delay

through 1 LUT

10 pF

—

3.7

—

4.8

—

5.9

ns

t_SU

t_H

Global clock setup time

Global clock hold time

Global clock to output delay

Global clock high time

Global clock low time

—

1.2

0.0

2.0

166

3.3

—

4.6

—

1.5

0.0

2.0

216

4.0

—

6.0

—

1.9

0.0

2.0

266

5.0

—

7.4

—

ns

ps

ns

t_CO

t_CH

t_CL

t_CNT

10 pF

—

Minimum global clock

period for

—

16-bit counter

f_CNT

Maximum global clock

frequency for 16-bit counter

—

304.0

(1)

—

247.5

—

201.1

MHz

Note to Table 5–26:

(1) The maximum frequency is limited by the I/O standard on the clock input pin. The 16-bit counter critical delay performs faster than this global

clock input pin maximum frequency.

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–21

Timing Model and Specifications

External Timing I/O Delay Adders

The I/O delay timing parameters for I/O standard input and output adders, and

input delays are specified by speed grade independent of device density.

Table 5–27 through Table 5–28 show the adder delays associated with I/O pins for all

packages. The delay numbers for –3, –4, and –5 speed grades shown in Table 5–27

through Table 5–30 are based on an EPM1270 device target, while –6 and –7 speed

grade values are based on an EPM570Z device target. If an I/O standard other than

3.3-V LVTTL is selected, add the input delay adder to the external t_SUtiming

parameters shown in Table 5–23 through Table 5–26. If an I/O standard other than

3.3-V LVTTL with 16 mA drive strength and fast slew rate is selected, add the output

delay adder to the external t_COand t_PDshown in Table 5–23 through Table 5–26.

Table 5–27. External Timing Input Delay Adders

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Standard

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max Unit

3.3-V LVTTL Without Schmitt

Trigger

—

0

—

0

—

0

—

0

—

0

ps

With

—

334

—

434

—

535

—

387

—

434

ps

Schmitt Trigger

3.3-V

LVCMOS

Without Schmitt

Trigger

—

0

—

0

—

0

—

0

—

0

ps

With

334

434

535

387

434

Schmitt Trigger

2.5-V LVTTL

Without Schmitt

Trigger

—

23

339

291

681

0

—

30

441

378

885

0

—

37

543

466

1,090

0

—

42

429

378

681

0

—

43

476

373

622

0

ps

With Schmitt

Trigger

1.8-V LVTTL

1.5-V LVTTL

3.3-V PCI

Without Schmitt

Trigger

Without Schmitt

Trigger

Without Schmitt

Trigger

Table 5–28. MAX II IOE Programmable Delays

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Parameter

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Unit

Input Delay from Pin to Internal

Cells = 1

—

1,225

—

1,592

—

1,960

—

1,858

—

2,171

ps

Input Delay from Pin to Internal

Cells = 0

—

89

—

115

—

142

—

569

—

609

ps

MAX II Device Handbook

5–22

Chapter 5: DC and Switching Characteristics

Timing Model and Specifications

Maximum Input and Output Clock Rates

Table 5–29 and Table 5–30 show the maximum input and output clock rates for

standard I/O pins in MAX II devices.

Table 5–29. MAX II Maximum Input Clock Rate for I/O

–3 Speed

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

Grade

–7 Speed

Grade

Standard

Grade

Unit

3.3-V LVTTL

Without Schmitt

Trigger

304

250

304

250

220

188

220

188

200

150

304

250

304

250

220

188

220

188

200

150

304

250

304

250

220

188

220

188

200

150

304

250

304

250

220

188

220

188

200

150

304

250

304

250

220

188

220

188

200

150

304

MHz

With Schmitt

Trigger

MHz

3.3-V LVCMOS

2.5-V LVTTL

Without Schmitt

Trigger

With Schmitt

Trigger

Without Schmitt

Trigger

With Schmitt

Trigger

2.5-V LVCMOS

Without Schmitt

Trigger

With Schmitt

Trigger

1.8-V LVTTL

1.8-V LVCMOS

1.5-V LVCMOS

3.3-V PCI

Without Schmitt

Trigger

Without Schmitt

Trigger

Without Schmitt

Trigger

Without Schmitt

Trigger

Table 5–30. MAX II Maximum Output Clock Rate for I/O

–3 Speed

Grade

–4 Speed

Grade

–5 Speed

Grade

–6 Speed

–7 Speed

Standard

3.3-V LVTTL

3.3-V LVCMOS

2.5-V LVTTL

2.5-V LVCMOS

1.8-V LVTTL

1.8-V LVCMOS

1.5-V LVCMOS

3.3-V PCI

Grade

304

220

200

150

304

Grade

304

220

200

150

304

Unit

304

220

200

150

304

220

200

150

304

220

200

150

304

MHz

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–23

Timing Model and Specifications

JTAG Timing Specifications

Figure 5–6 shows the timing waveforms for the JTAG signals.

Figure 5–6. MAX II JTAG Timing Waveforms

TMS

TDI

t

JCP

t

JPH

JPSU

t

JCL

JCH

TCK

TDO

t

JPXZ

JPZX

JPCO

t

JSSU

JSH

Signal

to be

Captured

t

JSXZ

JSZX

JSCO

Signal

to be

Driven

Table 5–31 shows the JTAG Timing parameters and values for MAX II devices.

Table 5–31. MAX II JTAG Timing Parameters (Part 1 of 2)

Symbol

_JCP(1)

Parameter

TCKclock period for V_CCIO1= 3.3 V

TCKclock period for V_CCIO1= 2.5 V

TCKclock period for V_CCIO1= 1.8 V

TCKclock period for V_CCIO1= 1.5 V

TCKclock high time

Min

55.5

62.5

100

143

20

Max

—

15

—

25

Unit

ns

t

t_JCH

t_JCL

TCK clock low time

20

t_JPSU

t_JPH

JTAG port setup time (2)

8

JTAG port hold time

10

t_JPCO

t_JPZX

t_JPXZ

t_JSSU

t_JSH

JTAG port clock to output (2)

JTAG port high impedance to valid output (2)

JTAG port valid output to high impedance (2)

Capture register setup time

—

8

Capture register hold time

10

t_JSCO

Update register clock to output

—

MAX II Device Handbook

5–24

Chapter 5: DC and Switching Characteristics

Referenced Documents

Table 5–31. MAX II JTAG Timing Parameters (Part 2 of 2)

Symbol

Parameter

Min

—

Max

25

Unit

ns

t_JSZX

t_JSXZ

Update register high impedance to valid output

Update register valid output to high impedance

—

25

ns

Notes to Table 5–31:

(1) Minimum clock period specified for 10 pF load on the TDOpin. Larger loads on TDOwill degrade the maximum TCK

frequency.

(2) This specification is shown for 3.3-V LVTTL/LVCMOS and 2.5-V LVTTL/LVCMOS operation of the JTAG pins. For 1.8-V

LVTTL/LVCMOS and 1.5-V LVCMOS, the t_JPSUminimum is 6 ns and t_JPCO, t_JPZX, and t_JPXZare maximum values at 35 ns.

Referenced Documents

This chapter references the following documents:

■

I/O Structure section in the MAX II Architecture chapter in the MAX II Device

Handbook

■

Hot Socketing and Power-On Reset in MAX II Devices chapter in the MAX II Device

Handbook

■

Operating Requirements for Altera Devices Data Sheet

PowerPlay Power Analysis chapter in volume 3 of the Quartus II Handbook

Understanding and Evaluating Power in MAX II Devices chapter in the MAX II Device

Handbook

■

Understanding Timing in MAX II Devices chapter in the MAX II Device Handbook

Using MAX II Devices in Multi-Voltage Systems chapter in the MAX II Device

Handbook

MAX II Device Handbook

Chapter 5: DC and Switching Characteristics

5–25

Document Revision History

Table 5–32 shows the revision history for this chapter.

Table 5–32. Document Revision History (Part 1 of 2)

Date and Revision Changes Made

Summary of Changes

November 2008,

version 2.4

■ Updated Table 5–2.

—

■ Updated “Internal Timing Parameters” section.

■ Updated New Document Format.

■ Updated Figure 5–1.

October 2008,

version 2.3

—

July 2008,

version 2.2

■ Updated Table 5–14 , Table 5–23 , and Table 5–24.

—

March 2008,

version 2.1

■ Added (Note 5) to Table 5–4.

December 2007,

version 2.0

■ Updated (Note 3) and (4) to Table 5–1.

■ Updated Table 5–2 and added (Note 5).

Updated document with

MAX IIZ information.

■ Updated ICCSTANDBY and ICCPOWERUP information and added

IPULLUP information in Table 5–4.

■ Added (Note 1) to Table 5–10.

■ Updated Figure 5–2.

■ Added (Note 1) to Table 5–13.

■ Updated Table 5–13 through Table 5–24, and Table 5–27 through

Table 5–30.

■ Added tCOMB information to Table 5–15.

■ Updated Figure 5–6.

■ Added “Referenced Documents” section.

■ Added note to Table 5–1.

December 2006,

version 1.8

—

■ Added document revision history.

■ Minor content and table updates.

July 2006,

version 1.7

—

February 2006,

version 1.6

■ Updated “External Timing I/O Delay Adders” section.

■ Updated Table 5–29.

■ Updated Table 5–30.

November 2005,

version 1.5

■ Updated Tables 5-2, 5-4, and 5-12.

—

August 2005,

version 1.4

■ Updated Figure 5-1.

■ Updated Tables 5-13, 5-16, and 5-26.

■ Removed Note 1 from Table 5-12.

■ Updated the R_PULLUPparameter in Table 5-4.

■ Added Note 2 to Tables 5-8 and 5-9.

■ Updated Table 5-13.

June 2005,

version 1.3

—

■ Added “Output Drive Characteristics” section.

2

■ Added I C mode and Notes 5 and 6 to Table 5-14.

■ Updated timing values to Tables 5-14 through 5-33.

MAX II Device Handbook

5–26

Chapter 5: DC and Switching Characteristics

Document Revision History

Table 5–32. Document Revision History (Part 2 of 2)

Date and Revision Changes Made

Summary of Changes

December 2004,

version 1.2

■ Updated timing Tables 5-2, 5-4, 5-12, and Tables 15-14 through 5-34.

—

■ Table 5-31 is new.

June 2004,

version 1.1

■ Updated timing Tables 5-15 through 5-32.

—

MAX II Device Handbook

6. Reference and Ordering Information

MII51006-1.5

Software

®

MAX II devices are supported by the Altera Quartus II design software with new,

®

optional MAX+PLUS II look and feel, which provides HDL and schematic design

entry, compilation and logic synthesis, full simulation and advanced timing analysis,

and device programming. Refer to the Design Software Selector Guide for more

details about the Quartus II software features.

The Quartus II software supports the Windows XP/2000/NT, Sun Solaris, Linux Red

Hat v8.0, and HP-UX operating systems. It also supports seamless integration with

®

industry-leading EDA tools through the NativeLink interface.

Device Pin-Outs

Printed device pin-outs for MAX II devices are available on the Altera website

(www.altera.com).

Ordering Information

Figure 6–1 describes the ordering codes for MAX II devices. For more information

about a specific package, refer to the Package Information chapter in the MAX II Device

Handbook.

Figure 6–1. MAX II Device Packaging Ordering Information

EPM

240

G

T

100

C

3

ES

Family Signature

EPM: MAX II

Optional Suffix

Indicates specific device

options or shipment method

ES: Engineering sample

N: Lead-free packaging

Device Type

240:

240 Logic Elements

570 Logic Elements

1,270 Logic Elements

2,210 Logic Elements

Speed Grade

570:

1270:

2210:

3, 4, 5, 6, or 7, with 3 being the fastest

Product-Line Suffix

Indicates device type

Operating Temperature

C: Commercial temperature (T_J= 0

°

C to 85

C to 100

A: Automotive temperature (T_J= -40

°

C)

G:

Z:

1.8-V V_CCINTlow-power device

1.8-V V_CCINTzero-power device

2.5-V or 3.3-V V_CCINTdevice

I: Industrial temperature (T_J= -40

°

C to 125

°

C)

Blank (no identifier):

Package Type

Thin quad flat pack (TQFP)

T:

FineLine BGA

F:

M: Micro FineLine BGA

Pin Count

Number of pins for a particular package

MAX II Device Handbook

6–2

Chapter 6: Reference and Ordering Information

Referenced Documents

This chapter references the following document:

■

Package Information chapter in the MAX II Device Handbook

Document Revision History

Table 6–1 shows the revision history for this chapter.

Table 6–1. Document Revision History

Date and Revision

Changes Made

Summary of Changes

October 2008,

version 1.5

■ Updated New Document Format.

—

December 2007,

version 1.4

■ Added “Referenced Documents” section.

■ Updated Figure 6–1.

Updated document with

MAX IIZ information.

December 2006,

version 1.3

■ Added document revision history.

—

October 2006,

version 1.2

■ Updated Figure 6-1.

June 2005,

version 1.1

■ Removed Dual Marking section.

MAX II Device Handbook


型号：	EPM570GF100A3N
厂家：	INTEL
描述：	Flash PLD, 5.4ns, 440-Cell, CMOS, PBGA100, 11 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-100
文件：	总86页 (文件大小：1210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EPM570GF100A3N [INTEL]

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