GT28F320S3-100 [INTEL]
WORD-WIDE FlashFile⑩ MEMORY FAMILY; 字宽FlashFile⑩ Memory系列型号: | GT28F320S3-100 |
厂家: | INTEL |
描述: | WORD-WIDE FlashFile⑩ MEMORY FAMILY |
文件: | 总52页 (文件大小:1261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ADVANCE INFORMATION
E
WORD-WIDE
FlashFile™ MEMORY FAMILY
28F160S3, 28F320S3
Includes Extended Temperature Specifications
Two 32-Byte Write Buffers
Cross-Compatible Command Support
Intel Standard Command Set
2.7 µs per Byte Effective
Programming Time
Common Flash Interface (CFI)
Scaleable Command Set (SCS)
Low Voltage Operation
2.7V or 3.3V VCC
100,000 Block Erase Cycles
2.7V, 3.3V or 5V VPP
Enhanced Data Protection Features
Absolute Protection with VPP = GND
Flexible Block Locking
100 ns Read Access Time (16 Mbit)
110 ns Read Access Time (32 Mbit)
Block Erase/Program Lockout
during Power Transitions
High-Density Symmetrically-Blocked
Architecture
32 64-Kbyte Erase Blocks (16 Mbit)
64 64-Kbyte Erase Blocks (32 Mbit)
Configurable x8 or x16 I/O
Automation Suspend Options
Program Suspend to Read
System Performance Enhancements
STS Status Output
Block Erase Suspend to Program
Block Erase Suspend to Read
Industry-Standard Packaging
µBGA* package, SSOP, and
TSOP (16 Mbit)
ETOX™ V Nonvolatile Flash
Technology
µBGA* package and SSOP (32 Mbit)
Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, non-volatile, read/write storage
solutions for a wide range of applications. The Word-Wide FlashFile memories are available at various
densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended
cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards.
Enhanced suspend capabilities provide an ideal solution for code or data storage applications. For secure
code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the Word-Wide FlashFile memories offer three levels of protection: absolute protection
with VPP at GND, selective block locking, and program/erase lockout during power transitions. These
alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. It comes in the
industry-standard 56-lead SSOP and µBGA packages. In addition, the 16-Mb device is available in the
industry-standard 56-lead TSOP package.
June 1997
Order Number: 290608-001
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F160S3 and 28F320S3 may contain design defects or errors known as errata. Current characterized errata are available
on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
or visit Intel’s website at http:\\www.intel.com
COPYRIGHT © INTEL CORPORATION, 1997
CG-041493
*Third-party brands and names are the property of their respective owners.
E
28F160S3, 28F320S3
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................5
1.1 New Features...............................................5
1.2 Product Overview.........................................5
1.3 Pinout and Pin Description...........................6
4.9 Byte/Word Write Command........................27
4.10 STS Configuration Command...................28
4.11 Block Erase Suspend Command..............28
4.12 Program Suspend Command ...................28
4.13 Set Block Lock-Bit Commands .................29
4.14 Clear Block Lock-Bits Command..............29
2.0 PRINCIPLES OF OPERATION .....................10
2.1 Data Protection ..........................................11
5.0 DESIGN CONSIDERATIONS........................39
5.1 Three-Line Output Control..........................39
5.2 STS and WSM Polling................................39
5.3 Power Supply Decoupling ..........................39
5.4 VPP Trace on Printed Circuit Boards...........39
5.5 VCC, VPP, RP# Transitions..........................39
5.6 Power-Up/Down Protection ........................39
3.0 BUS OPERATION.........................................12
3.1 Read ..........................................................12
3.2 Output Disable ...........................................12
3.3 Standby......................................................12
3.4 Deep Power-Down.....................................12
3.5 Read Query Operation ...............................12
3.6 Read Identifier Codes Operation................13
3.7 Write ..........................................................13
6.0 ELECTRICAL SPECIFICATIONS..................40
6.1 Absolute Maximum Ratings........................40
6.2 Operating Conditions..................................40
6.2.1 Capacitance.........................................41
6.2.2 AC Input/Output Test Conditions .........41
6.2.3 DC Characteristics...............................42
4.0 COMMAND DEFINITIONS ............................13
4.1 Read Array Command................................16
4.2 Read Query Mode Command.....................17
4.2.1 Query Structure Output .......................17
4.2.2 Query Structure Overview ...................19
4.2.3 Block Status Register ..........................20
4.2.4 CFI Query Identification String.............21
4.2.5 System Interface Information...............22
4.2.6 Device Geometry Definition.................23
4.2.7 Intel-Specific Extended Query Table ...24
4.3 Read Identifier Codes Command ...............25
4.4 Read Status Register Command................25
4.5 Clear Status Register Command................26
4.6 Block Erase Command ..............................26
4.7 Full Chip Erase Command .........................26
4.8 Write to Buffer Command...........................27
6.2.4 AC Characteristics - Read-Only
Operations..........................................44
6.2.5 AC Characteristics - Write Operations .46
6.2.6 Reset Operations.................................48
6.2.7 Erase, Program, And Lock-Bit
Configuration Performance.................49
APPENDIX A: Device Nomenclature and
Ordering Information ..................................51
APPENDIX B: Additional Information...............52
3
ADVANCE INFORMATION
28F160S3, 28F320S3
E
REVISION HISTORY
Number
Description
-001
Original version
4
ADVANCE INFORMATION
E
28F160S3, 28F320S3
This family of products are optimized for fast factory
programming and low power designs. Specifically
designed for 3V systems, the 28F160S3 and
28F320S3 support read operations at 2.7V–3.6V
Vcc with block erase and program operations at
1.0 INTRODUCTION
This datasheet contains 16- and 32-Mbit Word-
Wide FlashFileTM memory (28F160S3 and
28F320S3) specifications. Section 1 provides a
flash memory overview. Sections 2, 3, 4, and 5
describe the memory organization and functionality.
2.7V–3.6V and 5V VPP
.
High programming
performance is achieved through highly-optimized
write buffers. A 5V VPP option is available for even
faster factory programming. For a simple low power
design, VCC and VPP can be tied to 2.7V.
Additionally, the dedicated VPP pin gives complete
Section
6 covers electrical specifications for
extended temperature product offerings.
data protection when VPP ≤ VPPLK
.
1.1
New Features
Internal VPP detection circuitry automatically
configures the device for optimized write
operations.
The Word-Wide FlashFile memory family maintains
basic compatibility with Intel’s 28F016SA and
28F016SV. Key enhancements include:
A Common Flash Interface (CFI) permits OEM-
specified software algorithms to be used for entire
families of devices. This allows device-independent,
JEDEC ID-independent, and forward- and
backward-compatible software support for the
specified flash device families. Flash vendors can
standardize their existing interfaces for long-term
compatibility.
•
•
•
•
Common Flash Interface (CFI) Support
Scaleable Command Set (SCS) Support
Low Voltage Technology
Enhanced Suspend Capabilities
They share a compatible Status Register, basic
software commands, and pinout. These similarities
enable a clean migration from the 28F016SA or
28F016SV. When upgrading, it is important to note
the following differences:
Scaleable Command Set (SCS) allows a single,
simple software driver in all host systems to work
with all SCS-compliant flash memory devices,
independent of system-level packaging (e.g.,
memory card, SIMM, or direct-to-board placement).
•
Because of new feature and density options,
the devices have different manufacturer and
device identifier codes. This allows for software
optimization.
Additionally,
SCS
provides
the
highest
system/device data transfer rates and minimizes
device and system-level implementation costs.
•
•
New software commands.
A Command User Interface (CUI) serves as the
interface between the system processor and
To take advantage of low voltage on the
internal device operation.
A
valid command
28F160S3
and
28F320S3,
allow
VPP
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
connection to VCC
.
The 28F160S3 and
28F320S3 do not support a 12V VPP option.
1.2
Product Overview
A block erase operation erases one of the device’s
64-Kbyte blocks typically within tWHQV2/EHQV2
independent of other blocks. Each block can be
independently erased 100,000 times. Block erase
suspend mode allows system software to suspend
block erase to read or write data from any other
block.
The Word-Wide FlashFile memory family provides
density upgrades with pinout compatibility for the
16- and 32-Mbit densities. They are high-
performance memories arranged as 1 Mword and
2 Mwords of 16 bits or 2 Mbyte and 4 Mbyte of
8 bits. This data is grouped in thirty-two and sixty-
four 64-Kbyte blocks that can be erased, locked
and unlocked in-system. Figure 1 shows the block
Data is programmed in byte, word or page
increments. Program suspend mode enables the
system to read data or execute code from any other
flash memory array location.
diagram, and Figure
organization.
5 illustrates the memory
5
ADVANCE INFORMATION
28F160S3, 28F320S3
E
The device incorporates two Write Buffers of 32
bytes (16 words) to allow optimum-performance
data programming. This feature can improve
system program performance by up to four times
over non-buffer programming.
The Automatic Power Savings (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
The BYTE# pin allows either x8 or x16 read/writes
to the device. BYTE# at logic low selects 8-bit
mode with address A0 selecting between the low
byte and high byte. BYTE# at logic high enables
16-bit operation with address A1 becoming the
lowest order address. Address A0 is not used in 16-
bit mode.
Individual block locking uses a combination of block
lock-bits to lock and unlock blocks. Block lock-bits
gate block erase, full chip erase, program and write
to buffer operations. Lock-bit configuration
operations (Set Block Lock-Bit and Clear Block
Lock-Bits commands) set and clear lock-bits.
When one of the CEX# pins (CE0#, CE1#) and RP#
pins are at VCC, the component enters a CMOS
standby mode. Driving RP# to GND enables a deep
power-down mode which significantly reduces
power consumption, provides write protection,
resets the device, and clears the Status Register. A
reset time (tPHQV) is required from RP# switching
high until outputs are valid. Likewise, the device
has a wake time (tPHEL) from RP#-high until writes
to the CUI are recognized.
The Status Register and the STS pin in RY/BY#
mode indicate whether or not the device is busy
executing an operation or ready for
a new
command. Polling the Status Register, system
software retrieves WSM feedback. STS in RY/BY#
mode gives an additional indicator of WSM activity
by providing a hardware status signal. Like the
Status Register, RY/BY#-low indicates that the
WSM is performing a block erase, program, or lock-
bit operation. RY/BY#-high indicates that the WSM
is ready for a new command, block erase is
suspended (and program is inactive), program is
suspended, or the device is in deep power-down
mode.
1.3
Pinout and Pin Description
The 16-Mbit device is available in the 56-lead
TSOP, 56-lead SSOP and µBGA packages. The
32- Mb device is available in the 56-lead SSOP and
µBGA packages. The pinouts are shown in Figures
2, 3 and 4.
DQ0 - DQ15
Output Buffer
Input Buffer
VCC
Query
I/O Logic
BYTE#
CE#
WE#
OE#
RP#
WP#
Identifier
Register
Command
User
Interface
Status
Register
Multiplexer
Data
Comparator
Y-Decoder
X-Decoder
Y-Gating
STS
16-Mbit: A - A20
32-Mbit: A00 - A21
Input Buffer
Write State
Machine
VPP
Program/Erase
Voltage Switch
16-Mbit: Thirty-two
32-Mbit: Sixty-four
64-Kbyte Blocks
Address
Latch
VCC
GND
Address
Counter
Figure 1. Block Diagram
6
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Table 1. Pin Descriptions
Name and Function
Sym
Type
A0–A21
INPUT ADDRESS INPUTS: Address inputs for read and write operations are internally
latched during a write cycle. A0 selects high or low byte when operating in x8 mode.
In x16 mode, A0 is not used; input buffer is off.
16-Mbit → A0–A20 32-Mbit → A0–A21
DQ0–
INPUT/ DATA INPUTS/OUTPUTS: Inputs data and commands during CUI write cycles;
DQ15
OUTPUT outputs data during memory array, Status Register, query and identifier code read
cycles. Data pins float to high-impedance when the chip is deselected or outputs
are disabled. Data is internally latched during a write cycle.
CE0#,
CE1#
INPUT CHIP ENABLE: Activates the device’s control logic, input buffers, decoders, and
sense amplifiers. With CE0# or CE1# high, the device is deselected and power
consumption reduces to standby levels. Both CE0# and CE1# must be low to select
the device. Device selection occurs with the latter falling edge of CE0# or CE1#. The
first rising edge of CE0# or CE1# disables the device.
RP#
INPUT RESET/DEEP POWER-DOWN: When driven low, RP# inhibits write operations
which provides data protection during system power transitions, puts the device in
deep power-down mode, and resets internal automation. RP#-high enables normal
operation. Exit from deep power-down sets the device to read array mode.
OE#
WE#
INPUT OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
STS
OPEN
STATUS: Indicates the status of the internal state machine. When configured in
DRAIN level mode (default), it acts as a RY/BY# pin. For this and alternate configurations
OUTPUT of the STATUS pin, see the Configuration command. Tie STS to VCC with a pull-up
resistor.
WP#
INPUT WRITE PROTECT: Master control for block locking. When VIL, locked blocks
cannot be erased or programmed, and block lock-bits cannot be set or cleared.
BYTE#
VPP
INPUT BYTE ENABLE: Configures x8 mode (low) or x16 mode (high).
SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
Necessary voltage to perform block erase, program, and lock-bit configuration
operations. Do not float any power pins.
VCC
SUPPLY DEVICE POWER SUPPLY: Do not float any power pins. Do not attempt block
erase, program, or block-lock configuration with invalid VCC values.
GND
NC
SUPPLY GROUND: Do not float any ground pins.
NO CONNECT: Lead is not internally connected; it may be driven or floated.
7
ADVANCE INFORMATION
28F160S3, 28F320S3
E
28F016SA 28F160S3
28F160S3 28F016SA
28F160S5
28F016SV
28F160S5
28F016SV
3/5#
NC
CE1#
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0#
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
WP#
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
WP#
WE#
OE#
1
2
3
4
5
6
7
8
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
CE1#
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0#
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
RY/BY#
R#
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
9
56-LEAD TSOP
STANDARD PINOUT
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14 mm x 20 mm
TOP VIEW
GND
DQ11
DQ3
DQ10
DQ2
VCC
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
DQ9
DQ1
DQ8
DQ0
A0
BYTE# BYTE#
NC
NC
NC
NC
Highlights pinout changes.
Figure 2. TSOP 56-Lead Pinout
8
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Figure 3. SSOP 56-Lead Pinout
9
ADVANCE INFORMATION
28F160S3, 28F320S3
E
GND A10 VPP CE0 A14 VCC
VCC A14 CE0 VPP A10 GND
A4
A5
A2
A7
A6
A1
A9
A8
A3
A11 A12 A15 A17 A19
RP# A13 A16 A21 A20
A18 CE1 NC
A19 A17 A15 A12 A11 A9
A20 A21 A16 A13 RP# A8
A7
A6
A1
A4
A5
A2
NC CE1 A18
A3
NC NC BYTE#
A0
DQ7 WP# WE#
WE# WP# DQ7
BYTE# NC NC
DQ8 DQ1 DQ3 DQ12DQ6 DQ15 OE#
OE# DQ15 DQ6 DQ12 DQ3 DQ1 DQ8 A0
STSDQ14DQ13 DQ4 DQ11 DQ2 DQ9 DQ0
GND DQ5 VCC GNDDQ10 VCC
DQ0 DQ9 DQ2 DQ11DQ4 DQ13DQ14 STS
VCC DQ10GND VCC DQ5 GND
This is the view of the package as surface mounted on
the board. Note that the signals are mirror imaged.
Bottom View
NOTES:
1. Figures are not drawn to scale.
2. Address A21 is not included in the 28F160S3.
3. More information on µBGA* packages is available by contacting your Intel/Distribution sales office.
Figure 4. µBGA* Package Pinout
device defaults to read array mode. Manipulation
of external memory control pins allow array read,
standby, and output disable operations.
2.0 PRINCIPLES OF OPERATION
The word-wide memories include an on-chip
Write State Machine (WSM) to manage block
erase, program, and lock-bit configuration
functions. It allows for: 100% TTL-level control
inputs, fixed power supplies during block erasure,
programming, lock-bit configuration, and minimal
processor overhead with RAM-like interface
timings.
Read Array, Status Register, query, and identifier
codes can be accessed through the CUI
independent of the VPP voltage. Proper
programming voltage on VPP enables successful
block
erasure,
program,
and
lock-bit
configuration. All functions associated with
altering memory contents—block erase, program,
lock-bit configuration—are accessed via the CUI
and verified through the Status Register.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the
10
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Data Protection
Commands are written using standard micro-
processor write timings. The CUI contents serve
as input to the WSM that controls the block
erase, programming, and lock-bit configuration.
The internal algorithms are regulated by the
WSM, including pulse repetition, internal
verification, and margining of data. Addresses
and data are internally latched during write
cycles. Writing the appropriate command outputs
array data, identifier codes, or Status Register
data.
2.1
Depending on the application, the system
designer may choose to make the VPP power
supply switchable or hardwired to VPPH1/2. The
device supports either design practice, and
encourages optimization of the processor-
memory interface.
When VPP ≤ VPPLK, memory contents cannot be
altered. When high voltage is applied to VPP, the
two-step block erase, program, or lock-bit
configuration command sequences provide
protection from unwanted operations. All write
functions are disabled when VCC voltage is below
the write lockout voltage VLKO or when RP# is at
VIL. The device’s block locking capability
provides additional protection from inadvertent
code or data alteration.
Interface software that initiates and polls
progress of block erase, programming, and lock-
bit configuration can be stored in any block. This
code is copied to and executed from system
RAM during flash memory updates. After
successful completion, reads are again possible
via the Read Array command. Block erase
suspend allows system software to suspend a
block erase to read or write data from any other
block. Program suspend allows system software
to suspend a program to read data from any
other flash memory array location.
Figure 5. Memory Map
11
ADVANCE INFORMATION
28F160S3, 28F320S3
E
3.0 BUS OPERATION
3.4
Deep Power-Down
The local CPU reads and writes flash memory in-
system. All bus cycles to or from the flash
memory conform to standard microprocessor bus
cycles.
RP# at VIL initiates the deep power-down mode.
In read mode, RP#-low deselects the memory,
places output drivers in a high-impedance state,
and turns off all internal circuits. RP# must be
held low for time tPLPH. Time tPHQV is required
after return from power-down until initial memory
access outputs are valid. After this wake-up
interval, normal operation is restored. The CUI
resets to read array mode, and the Status
Register is set to 80H.
3.1
Read
Block information, query information, identifier
codes and Status Registers can be read
independent of the VPP voltage.
During block erase, programming, or lock-bit
configuration modes, RP#-low will abort the
operation. STS in RY/BY# mode remains low
until the reset operation is complete. Memory
contents being altered are no longer valid; the
The first task is to place the device into the
desired read mode by writing the appropriate
read-mode command (Read Array, Query, Read
Identifier Codes, or Read Status Register) to the
CUI. Upon initial device power-up or after exit
from deep power-down mode, the device
automatically resets to read array mode. Control
pins dictate the data flow in and out of the
component. CE0#, CE1# and OE# must be driven
active to obtain data at the outputs. CE0# and
CE1# are the device selection controls, and,
when both are active, enable the selected
memory device. OE# is the data output (DQ0–
DQ15) control: When active it drives the selected
memory data onto the I/O bus. WE# must be at
data may be partially
corrupted after
programming or partially altered after an erase or
lock-bit configuration. Time tPHWL is required after
RP# goes to logic-high (VIH) before another
command can be written.
It is important in any automated system to assert
RP# during system reset. When the system
comes out of reset, it expects to read from the
flash memory. Automated flash memories
provide status information when accessed during
V
IH and RP# must be at VIH. Figure 17 illustrates
block
erase,
programming,
or
lock-bit
a read cycle.
configuration modes. If a CPU reset occurs with
no flash memory reset, proper CPU initialization
may not occur because the flash memory may be
providing status information instead of array data.
Intel’s Flash memories allow proper CPU
initialization following a system reset through the
use of the RP# input. In this application, RP# is
controlled by the same RESET# signal that
resets the system CPU.
3.2
Output Disable
With OE# at a logic-high level (VIH), the device
outputs are disabled. Output pins DQ0–DQ15 are
placed in a high-impedance state.
3.3
Standby
3.5
Read Query Operation
CE0# or CE1# at a logic-high level (VIH) places
the device in standby mode, substantially
reducing device power consumption. DQ0–DQ15
(or DQ0– DQ7 in x8 mode) outputs are placed in
a high-impedance state independent of OE#. If
deselected during block erase, programming, or
lock-bit configuration, the device continues
functioning and consuming active power until the
operation completes.
The read query operation outputs block status,
Common Flash Interface (CFI) ID string, system
interface, device geometry, and Intel-specific
extended query information.
12
ADVANCE INFORMATION
E
28F160S3, 28F320S3
3.6
Read Identifier Codes
Operation
3.7
Write
Writing commands to the CUI enables reading of
device data, query, identifier codes, inspection
and clearing of the Status Register. Additionally,
when VPP = VPPH1/2, block erasure, programming,
and lock-bit configuration can also be performed.
The read-identifier codes operation outputs the
manufacturer code, device code, and block lock
configuration codes for each block configuration
(see Figure 6). Using the manufacturer and
device codes, the system software can
automatically match the device with its proper
algorithms. The block-lock configuration codes
identify each block’s lock-bit setting.
The Block Erase command requires appropriate
command data and an address within the block
to be erased. The Byte/Word Write command
requires the command and address of the
location to be written. Set Block Lock-Bit
commands require the command and address
within the block to be locked. The Clear Block
Lock-Bits command requires the command and
an address within the device.
The CUI does not occupy an addressable
memory location. It is written when WE#, CE0#,
and CE1# are active and OE# = VIH. The address
and data needed to execute a command are
latched on the rising edge of WE# or CEX#
(CE0#, CE1#), whichever goes high first.
Standard microprocessor write timings are used.
Figure 18 illustrates a write operation.
4.0 COMMAND DEFINITIONS
VPP voltage ≤ VPPLK enables read operations
from the Status Register, identifier codes, or
memory blocks. Placing VPPH1/2 on VPP enables
successful block erase, programming, and lock-
bit configuration operations.
Device operations are selected by writing specific
commands into the CUI. and Table 3 define
these commands.
Figure 6. Device Identifier Code Memory Map
13
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Table 2. Bus Operations
Notes RP# CE0# CE1# OE#(11) WE#(11) Address
Mode
Read
VPP
X
DQ(8)
STS(3)
1,2
VIH
VIH
VIH
VIL
VIL
VIL
VIH
VIH
X
VIL
VIL
VIH
VIL
VIH
X
VIL
VIH
X
VIH
VIH
X
X
X
X
DOUT
High Z
High Z
X
X
X
Output Disable
Standby
X
X
Reset/Power-
Down Mode
10
4
VIL
VIH
X
X
X
X
X
High Z High Z(9)
DOUT High Z(9)
DOUT High Z(9)
Read Identifier
Codes
VIL
VIL
VIL
VIH
See
Figure 6
Read Query
5
VIH
VIH
VIL
VIL
VIL
VIL
VIL
VIH
VIH
VIL
See Table 6
X
X
Write
3,6,7
VPPH1/2
DIN
X
NOTES:
1. Refer to Table 19. When VPP ≤ VPPLK, memory contents can be read, but not altered.
2. X can be VIL or VIH for control and address input pins and VPPLK or VPPH1/2 for VPP. See Table 19, for VPPLK and VPPH1/2
voltages.
3. STS in level RY/BY# mode (default) is VOL when the WSM is executing internal block erase, programming, or lock-bit
configuration algorithms. It is VOH when the WSM is not busy, in block erase suspend mode (with programming inactive),
program suspend mode, or deep power-down mode.
4. See Section 4.3 for read identifier code data.
5. See Section 4.2 for read query data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when VPP = VPPH1/2 and
V
CC = VCC1/2 (see Section 6.2).
7. Refer to Table 3 for valid DIN during a write operation.
8. DQ refers to DQ0–7 if BYTE# is low and DQ0–15 if BYTE# is high.
9. High Z will be VOH with an external pull-up resistor.
10. RP# at GND ± 0.2V ensures the lowest deep power-down current.
11. OE# = VIL and WE# = VIL concurrently is an undefined state and should not be attempted.
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28F160S3, 28F320S3
Table 3. Word-Wide FlashFile™ Memory Command Set Definitions(13)
Command
Scaleable Bus
or Basic Cycles
Command Req'd
Set(14)
Notes
First Bus Cycle
Second Bus Cycle
Oper(1) Addr(2) Data(3,4) Oper(1) Addr(2) Data(3,4)
Read Array
SCS/BCS
SCS/BCS
SCS
1
≥2
≥ 2
2
Write
Write
Write
Write
Write
X
X
FFH
90H
98H
70H
50H
E8H
Read Identifier Codes
Read Query
5
Read
Read
Read
IA
QA
X
ID
X
QD
Read Status Register
Clear Status Register
Write to Buffer
SCS/BCS
SCS/BCS
SCS
X
SRD
1
X
> 2 8, 9, 10 Write
BA
X
Write
Write
BA
PA
N
Word/Byte Program
SCS/BCS
2
6,7
Write
40H
or
PD
10H
Block Erase
SCS/BCS
2
1
6,10
6
Write
Write
X
X
20H
B0H
Write
BA
D0H
Block Erase, Word/Byte SCS/BCS
Program Suspend
Block Erase, Word/Byte SCS/BCS
Program Resume
1
6
Write
X
D0H
STS pin Configuration
Set Block Lock-Bit
Clear Block Lock-Bits
Full Chip Erase
SCS
SCS
SCS
SCS
2
2
2
2
Write
Write
Write
Write
X
X
X
X
B8H
60H
60H
30H
Write
Write
Write
Write
X
BA
X
CC
11
12
10
01H
D0H
D0H
X
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ADVANCE INFORMATION
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NOTES:
1. Bus operations are defined in Table 2.
2. X = Any valid address within the device.
BA = Address within the block being erased or locked.
IA = Identifier Code Address: see Table 12.
QA = Query database Address.
PA = Address of memory location to be programmed.
3. ID = Data read from Query database.
SRD = Data read from Status Register. See Table 15 for a description of the Status Register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code. (See Table 14.)
4. The upper byte of the data bus (DQ8–15) during command writes is a “Don’t Care” in x16 operation.
5. Following the Read Identifier Codes command, read operations access manufacturer, device, and block-lock codes. See
Section 4.3 for read identifier code data.
6. If a block is locked (i.e., the block’s lock-bit is set to 0), WP# must be at VIH in order to perform block erase, program and
suspend operations. Attempts to issue a block erase, program and suspend operation to a locked block while WP# is V
IL
will fail.
7. Either 40H or 10H are recognized by the WSM as the byte/word program setup.
8. After the Write to Buffer command is issued, check the XSR to make sure a Write Buffer is available.
9. N = byte/word count argument such that the number of bytes/words to be written to the input buffer = N + 1. N = 0 is 1
byte/word length, and so on. Write to Buffer is a multi-cycle operation, where a byte/word count of N + 1 is written to the
correct memory address (WA) with the proper data (WD). The Confirm command (D0h) is expected after exactly N + 1 write
cycles; any other command at that point in the sequence aborts the buffered write. Writing a byte/word count outside the
buffer boundary causes unexpected results and should be avoided.
10. The write to buffer, block erase, or full chip erase operation does not begin until a Confirm command (D0h) is issued.
Confirm also reactivates suspended operations.
11. A block lock-bit can be set only while WP# is V .
IH
12. WP# must be at VIH to clear block lock-bits. The clear block lock-bits operation simultaneously clears all block lock-bits.
13. Commands other than those shown above are reserved for future use and should not be used.
14. The Basic Command Set (BCS) is the same as the 28F008SA Command Set or Intel Standard Command Set. The
Scaleable Command Set (SCS) is also referred to as the Intel Extended Command Set.
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28F160S3, 28F320S3
Query data are always presented on the lowest-
order data outputs (DQ0-7) only. The numerical
offset value is the address relative to the maximum
bus width supported by the device. On this device,
the Query table device starting address is a 10h
word address, since the maximum bus width is x16.
4.1
Read Array Command
Upon initial device power-up and after exit from
deep power-down mode, the device defaults to read
array mode. This operation is also initiated by
writing the Read Array command. The device
remains enabled for reads until another command
is written. Once the internal WSM has started block
erase, program, or lock-bit configuration, the device
will not recognize the Read Array command until
the WSM completes its operation—unless the WSM
is suspended via an Erase-Suspend or Program-
Suspend command. The Read Array command
functions independently of the VPP voltage.
For this word-wide (x16) device, the first two bytes
of the Query structure, “Q” and ”R” in ASCII, appear
on the low byte at word addresses 10h and 11h.
This CFI-compliant device outputs 00H data on
upper bytes. Thus, the device outputs ASCII “Q” in
the low byte (DQ0-7) and 00h in the high byte
(DQ8-15).
Since the device is x8/x16 capable, the x8 data is
still presented in word-relative (16-bit) addresses.
However, the “fill data” (00h) is not the same as
driven by the upper bytes in the x16 mode. As in
x16 mode, the byte address (A0) is ignored for
Query output so that the “odd byte address” (A0
high) repeats the “even byte address” data (A0 low).
Therefore, in x8 mode using byte addressing, the
device will output the sequence “Q”, “Q”, “R”, “R”,
“Y”, “Y”, and so on, beginning at byte-relative
address 20h (which is equivalent to word offset 10h
in x16 mode).
4.2
Read Query Mode Command
This section defines the data structure or
“database” returned by the Common Flash Interface
(CFI) Query command. System software should
parse this structure to gain critical information such
as block size, density, x8/x16, and electrical
specifications. Once this information has been
obtained, the software will know which command
sets to use to enable flash writes, block erases, and
otherwise control the flash component. The Query
is part of an overall specification for multiple
command set and control interface descriptions
called Common Flash Interface, or CFI.
At Query addresses containing two or more bytes
of information, the least significant data byte is
presented at the lower address, and the most
significant data byte is presented at the higher
address.
4.2.1
QUERY STRUCTURE OUTPUT
The Query “database” allows system software to
gain critical information for controlling the flash
component. This section describes the device’s
CFI-compliant interface that allows the host system
to access Query data.
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Table 4. Summary of Query Structure Output as a Function of Device and Mode
Device Type/Mode
Word Addressing
Location Query Data
Byte Addressing
Location
Query Data
Hex, ASCII
Hex, ASCII
x16 device/
x16 mode
10h
11h
12h
0051h “Q”
0052h “R”
0059h “Y”
20h
21h
22h
51h
00h
52h
“Q”
null
“R”
x16 device/
x8 mode
N/A(1)
N/A
20h
21h
22h
51h
51h
52h
“Q”
“Q”
“R”
NOTE:
1. The system must drive the lowest order addresses to access all the device’s array data when the device is configured in x8
mode. Therefore, word addressing where lower addresses are not toggled by the system is“Not Applicable” for x8-
configured devices.
Table 5. Example of Query Structure Output of a x16- and x8-Capable Device
Device
Address
Word Addressing:
Query Data
Byte
Address
Byte Addressing:
Query Data
A16–A1
D15–D0
A7–A0
D7–D0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
0051h “Q”
0052h “R”
0059h “Y”
P_IDLO PrVendor
P_IDHI ID #
20h
21h
22h
23h
24h
25h
26h
27h
28h
...
51h
51h
52h
52h
59h
59h
“Q”
“Q”
“R”
“R”
“Y”
“Y”
PLO
PHI
PrVendor
TblAdr
P_IDLO PrVendor
P_IDLO ID #
P_IDHI
...
A_IDLO AltVendor
A_IDHI ID #
...
“
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28F160S3, 28F320S3
4.2.2
QUERY STRUCTURE OVERVIEW
The Query command causes the flash component
to display the Common Flash Interface (CFI) Query
structure or “database.” The structure sub-sections
and address locations are summarized in Table 8.
The following sections describe the Query structure
sub-sections in detail.
Table 6. Query Structure(1)
Sub-Section Name
Offset
00h
Description
Manufacturer Code
Device Code
01h
(BA+2)h(2)
04-0Fh
10h
Block Status Register
Block-specific information
Reserved
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing & voltage information
Flash device layout
CFI Query Identification String
System Interface Information
Device Geometry Definition
1Bh
27h
P(3)
Primary Intel-Specific Extended Query
Table
Vendor-defined additional information
specific to the Primary Vendor Algorithm
NOTES:
1. Refer to Section 4.2.1 and Table 4 for the detailed definition of offset address as a function of device word width and mode.
2. BA = The beginning location of a Block Address (i.e., 08000h is the beginning location of block 1 when the block size is
32 Kword).
3. Offset 15 defines “P” which points to the Primary Intel-specific Extended Query Table.
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4.2.3
BLOCK STATUS REGISTER
Block Erase Status (BSR.1) allows system software
to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to
verify that the VCC supply was not accidentally
removed during an erase operation. This bit is only
reset by issuing another erase operation to the
block. The Block Status Register is accessed from
word address 02h within each block.
The Block Status Register indicates whether an
erase operation completed successfully or whether
a given block is locked or can be accessed for flash
program/erase operations.
Table 7. Block Status Register
Description
Offset
Length
(bytes)
28F320S3/
28F160S3
x16 Device/Mode
(BA+2)h(1)
01h
Block Status Register
BA+2: 0000h or
0001h
BSR.0 = Block Lock Status
1 = Locked
BA+2 (bit 0): 0 or 1
0 = Unlocked
BSR.1 = Block Erase Status
BA+2 (bit 1): 0 or 1
1 = Last erase operation did not complete
successfully
0 = Last erase operation completed successfully
BSR 2-7 Reserved for future use
BA+2 (bits 2-7): 0
NOTE:
1. BA = The beginning location of a Block Address (i.e., 008000h is the beginning location of block 1 in word mode.)
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28F160S3, 28F320S3
4.2.4
CFI QUERY IDENTIFICATION STRING
The Identification String provides verification that
the component supports the Common Flash
Interface specification. Additionally, it indicates
which version of the specification and which
vendor-specified command set(s) is
supported.
(are)
Table 8. CFI Identification
Description
Offset
10h
Length
(Bytes)
28F320S3/
28F160S3
03h
Query-Unique ASCII string “QRY“
10:
11:
12:
0051h
0052h
0059h
13h
15h
17h
02h
02h
02h
Primary Vendor Command Set and Control Interface ID Code
16-bit ID Code for Vendor-Specified Algorithms
13:
14:
0001h
0000h
Address for Primary Algorithm Extended Query Table
Offset value = P = 31h
15:
16:
0031h
0000h
Alternate Vendor Command Set and Control Interface ID Code
Second Vendor-Specified Algorithm Supported
Note: 0000h means none exists
17:
18:
0000h
0000h
19h
02h
Address for Secondary Algorithm Extended Query Table
Note: 0000h means none exists
19:
1A:
0000h
0000h
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4.2.5
SYSTEM INTERFACE INFORMATION
The following device information can be useful in
optimizing system interface software.
Table 9. System Interface Information
Offset
Length
(bytes)
Description
28F320S3/
28F160S3
1Bh
01h
01h
01h
01h
VCC Logic Supply Minimum Program/Erase Voltage
bits 7–4 BCD volts
1B:
0030h
0055h
0030h
0055h
bits 3–0 BCD 100 mv
1Ch
1Dh
1Eh
VCC Logic Supply Maximum Program/Erase Voltage
bits 7–4 BCD volts
1C:
1D:
1E:
bits 3–0 BCD 100 mv
VPP [Programming] Supply Minimum Program/Erase Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
VPP [Programming] Supply Maximum Program/Erase Voltage
bits 7–4 HEX volts
bits 3–0 BCD 100 mv
1Fh
20h
21h
22h
23h
01h
01h
01h
01h
01h
Typical Time-Out per Single Byte/Word Program, 2N µ-sec
Typical Time-Out for Max. Buffer Write, 2N µ-sec
Typical Time-Out per Individual Block Erase, 2N m-sec
Typical Time-Out for Full Chip Erase, 2N m-sec
1F:
20:
21:
22:
23:
0003h
0006h
000Ah
000Fh
TBD
Maximum Time-Out for Byte/Word Program,
2N Times Typical
24h
25h
01h
01h
Maximum Time-Out for Buffer Write, 2N Times Typical
24:
25:
TBD
TBD
Maximum Time-Out per Individual Block Erase,
2N Times Typical
26h
01h
Maximum Time-Out for Chip Erase, 2N Times Typical
26:
TBD
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28F160S3, 28F320S3
4.2.6
DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash device
geometry.
Table 10. Device Geometry Definition
Offset
Length
(bytes)
Description
28F320S3/
28F160S3
27h
01h
Device Size = 2N in Number of Bytes
27:
0015h
(16Mb)
27:
0016h
(32Mb)
28h
02h
Flash Device Interface Description
28:
29:
0002h
0000h
value
meaning
0002h
x8/x16 asynchronous
2Ah
2Ch
02h
01h
Maximum Number of Bytes in Write Buffer = 2N
2A:
2B:
0005h
0000h
Number of Erase Block Regions within Device:
bits 7–0 = x = # of Erase Block Regions
Erase Block Region Information
2C:
0001h
2Dh
04h
y:
32 Blk
(16Mb)
001Fh
0000h
bits 15–0 = y, Where y+1 = Number of Erase Blocks of
Identical Size within Region
2D:
2E:
bits 31–16 = z, Where the Erase Block(s) within This Region
are (z) × 256 Bytes
y:
64 Blk
(32Mb)
003Fh
0000h
2D:
2E:
z:
2F:
30:
64-KB
0000h
0001h
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4.2.7
INTEL-SPECIFIC EXTENDED QUERY
TABLE
Certain flash features and commands are optional.
The Intel-Specific Extended Query table specifies
this and other similar types of information.
Table 11. Primary-Vendor Specific Extended Query
Description
Offset(1)
Length
(bytes)
Data
(P)h
03h
Primary Extended Query Table
Unique ASCII String “PRI“
31:
32:
33:
0050h
0052h
0049h
(P+3)h
(P+4)h
(P+5)h
01h
01h
04h
Major Version Number, ASCII
Minor Version Number, ASCII
Optional Feature & Command Support
34:
35:
0031h
0030h
36:
37:
38:
39:
000Fh
0000h
0000h
0000h
bit 0 Chip Erase Supported
bit 1 Suspend Erase Supported
bit 2 Suspend Program Supported (1=yes, 0=no)
(1=yes, 0=no)
(1=yes, 0=no)
bit 3 Lock/Unlock Supported
bit 4 Queued Erase Supported
(1=yes, 0=no)
(1=yes, 0=no)
bits 5–31 Reserved for future use; undefined bits
are “0”
(P+9)h
01h
Supported Functions after Suspend
3A:
0001h
Read Array, Status, and Query are always supported during
suspended Erase or Program operation. This field defines
other operations supported.
bit 0 Program Supported after Erase Suspend
(1=yes, 0=no)
bits 1-7 Reserved for future use; undefined bits are “0”
(P+A)h
02h
Block Status Register Mask
3B:
3C:
0003h
0000h
Defines which bits in the Block Status Register section of
Query are implemented.
bit 0 Block Status Register Lock-Bit [BSR.0] active
(1=yes, 0=no)
bit 1 Block Erase Status Bit [BSR.1] active
(1=yes, 0=no)
bits 2-15 Reserved for future use; undefined bits
are “0”
NOTES:
1. The variable P is a pointer which is defined at offset 15h inTable 8.
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28F160S3, 28F320S3
Table 11. Primary-Vendor Specific Extended Query (Continued)
Offset
Length
(bytes)
Description
Data
0050h
(P+C)h
01h
VCC Logic Supply Optimum Program/Erase voltage (highest
performance)
3D:
3E:
bits 7–4
bits 3–0
BCD value in volts
BCD value in 100 mv
(P+D)h
01h
VPP [Programming] Supply Optimum Program/Erase voltage
0050h
bits 7–4
bits 3–0
HEX value in volts
BCD value in 100 mv
(P+E)h
reserved Reserved for future use
4.3
Read Identifier Codes
Command
Table 12. Identifier Codes
Code
Address(2) Data
The identifier code operation is initiated by writing
the Read Identifier Codes command. Following the
command write, read cycles from addresses shown
in Figure 6 retrieve the manufacturer, device, block
lock configuration, and block erase status codes
(see Table 12 for identifier code values). To
terminate the operation, write another valid
command. Like the Read Array command, the
Read Identifier Codes command functions
independently of the VPP voltage. Following the
Read Identifier Codes command, the information in
Table 12 can be read.
Manufacturer Code
Device Code
000000
000001
000001
X0002(1)
B0
D0
D4
16 Mbit
32 Mbit
Block Lock Configuration
• Block is Unlocked
DQ0 = 0
DQ0 = 1
DQ2-7
• Block is Locked
• Reserved for Future Use
Block Erase Status
x0002(1)
• Last erase completed
DQ1 = 0
DQ1 = 1
DQ2-7
successfully
• Last erase did not
complete successfully
4.4
Read Status Register
Command
• Reserved for Future Use
NOTES:
The Status Register may be read to determine
when programming, block erasure, or lock-bit
configuration is complete and whether the operation
completed successfully. It may be read at any time
by writing the Read Status Register command.
After writing this command, all subsequent read
operations output data from the Status Register
until another valid command is written. The Status
Register contents are latched on the falling edge of
OE#, CE0#, or CE1# whichever occurs last. OE# or
CEX# must toggle to VIH to update the Status
Register latch. The Read Status Register command
functions independently of the VPP voltage.
1. X selects the specific block lock configuration code.
See Figure 6 for the device identifier code memory
map.
2. A0 should be ignored in this address. The lowest order
address line is A1 in both word and byte mode.
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Following a program, block erase, set block lock-bit,
or clear block lock-bits command sequence, only
SR.7 is valid until the Write State Machine
completes or suspends the operation. Device I/O
pins DQ0-6 and DQ8-15 are invalid. When the
operation completes or suspends (SR.7 = 1), all
contents of the Status Register are valid when read.
analyzing STS in level RY/BY# mode or Status
Register bit SR.7. Toggle OE#, CE0#, or CE1# to
update the Status Register.
When the block erase is complete, Status Register
bit SR.5 should be checked. If a block erase error is
detected, the Status Register should be cleared
before system software attempts corrective actions.
The CUI remains in read Status Register mode until
a new command is issued.
The eXtended Status Register (XSR) may be read
to determine Write Buffer availability (see Table 16).
The XSR may be read at any time by writing the
Write to Buffer command. After writing this
command, all subsequent read operations output
data from the XSR, until another valid command is
written. The contents of the XSR are latched on the
falling edge of OE# or CEX# whichever occurs last
in the read cycle. Write to buffer command must be
re-issued to update the XSR latch.
This two-step command sequence of set-up
followed by execution ensures that block contents
are not accidentally erased. An invalid Block Erase
command sequence will result in both Status
Register bits SR.4 and SR.5 being set to “1.” Also,
reliable block erasure can only occur when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, block contents are protected
against erasure. If block erase is attempted while
VPP ≤ VPPLK, SR.3 and SR.5 will be set to “1.”
Successful block erase requires that the
corresponding block lock-bit be cleared, or WP# =
VIH. If block erase is attempted when the
corresponding block lock-bit is set and WP# = VIL,
the block erase will fail and SR.1 and SR.5 will be
set to “1.”
4.5
Clear Status Register
Command
Status Register bits SR.5, SR.4, SR.3, and SR.1
are set to “1”s by the WSM and can only be reset
by the Clear Status Register command. These bits
indicate various failure conditions (see Table 15).
By allowing system software to reset these bits,
several operations (such as cumulatively erasing or
locking multiple blocks or programming several
bytes/words in sequence) may be performed. The
Status Register may be polled to determine if an
error occurred during the sequence.
4.7
Full Chip Erase Command
The Full Chip Erase command followed by
a
Confirm command erases all unlocked blocks. After
the Confirm command is written, the device erases
all unlocked blocks from block 0 to block 31 (or 63)
sequentially. Block preconditioning, erase, and
verify are handled internally by the WSM. After the
Full Chip Erase command sequence is written to
the CUI, the device automatically outputs the Status
Register data when read. The CPU can detect full
chip erase completion by polling the STS pin in
level RY/BY# mode or Status Register bit SR.7.
To clear the Status Register, the Clear Status
Register command is written. It functions
independently of the applied VPP voltage. This
command is not functional during block erase or
program suspend modes.
4.6
Block Erase Command
When the full chip erase is complete, Status
Register bit SR.5 should be checked to see if the
operation completed successfully. If an erase error
occurred, the Status Register should be cleared
before issuing the next command. The CUI remains
in read Status Register mode until a new command
is issued. If an error is detected while erasing a
block during a full chip erase operation, the WSM
skips the remaining cells in that block and proceeds
to erase the next block. Reading the block valid
status code by issuing the Read Identifier Codes
command or Query command informs the user of
which block(s) failed to erase.
Block Erase is executed one block at a time and
initiated by a two-cycle command. A Block Erase
Setup command is written first, followed by a
Confirm command. This command sequence
requires appropriate sequencing and an address
within the block to be erased (erase changes all
block data to FFH). Block preconditioning, erase,
and verify are handled internally by the WSM
(invisible to the system). After the two-cycle block
erase sequence is written, the device automatically
outputs Status Register data when read (see Figure
10). The CPU can detect block erase completion by
26
ADVANCE INFORMATION
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28F160S3, 28F320S3
This two-step command sequence of setup followed
by execution ensures that block contents are not
accidentally erased. An invalid Full Chip Erase
command sequence will result in both Status
Register bits SR.4 and SR.5 being set to 1. Also,
reliable full chip erasure can only occur when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, block contents are protected
against erasure. If full chip erase is attempted while
If an error occurs while writing, the device will stop
programming, and Status Register bit SR.4 will be
set to a “1” to indicate a program failure. Any time a
media failure occurs during a program or an erase
(SR.4 or SR.5 is set), the device will not accept any
more Write to Buffer commands. Additionally, if the
user attempts to write past an erase block boundary
with a Write to Buffer command, the device will
abort programming. This will generate an “Invalid
Command/Sequence” error and Status Register bits
SR.5 and SR.4 will be set to “1.” To clear SR.4
V
PP ≤ VPPLK, SR.3 and SR.5 will be set to 1. When
WP# = VIL, only unlocked blocks are erased. Full
chip erase cannot be suspended.
and/or SR.5, issue
command.
a Clear Status Register
Reliable buffered programming can only occur
when VCC
VCC1/2 and VPP VPPH1/2 If
programming is attempted while VPP ≤ VPPLK
4.8
Write to Buffer Command
=
=
.
,
To program the flash device via the write buffers, a
Write to Buffer command sequence is initiated. A
variable number of bytes or words, up to the buffer
size, can be written into the buffer and programmed
to the flash device. First, the Write to Buffer setup
command is issued along with the Block Address.
At this point, the eXtended Status Register
information is loaded and XSR.7 reverts to the
“buffer available” status. If XSR.7 = 0, no write
buffer is available. To retry, continue monitoring
XSR.7 by issuing the Write to Buffer setup
command with the Block Address until XSR.7 = 1.
When XSR.7 transitions to a “1,” the buffer is ready
for loading.
Status Register bits SR.4 and SR.5 will be set to
“1.” Programming attempts with invalid VCC and VPP
voltages produce spurious results and should not
be attempted. Finally, successful programming
requires that the corresponding Block Lock-Bit be
cleared, or WP# = VIH. If a buffered write is
attempted when the corresponding Block Lock-Bit
is set and WP# = VIL, SR.1 and SR.4 will be set to
“1.”
4.9
Byte/Word Program Commands
Byte/Word programming is executed by a two-cycle
command sequence. Byte/Word Program setup
(standard 40H or alternate 10H) is written, followed
by a second write that specifies the address and
data (latched on the rising edge of WE#). The WSM
then takes over, controlling the program and verify
algorithms internally. After the write sequence is
written, the device automatically outputs Status
Register data when read. The CPU can detect the
completion of the program event by analyzing STS
in level RY/BY# mode or Status Register bit SR.7.
Now a Word/Byte count is issued at an address
within the block. On the next write, a device start
address is given along with the write buffer data.
For maximum programming performance and lower
power, align the start address at the beginning of a
Write Buffer boundary. Subsequent writes must
supply additional device addresses and data,
depending on the count. All subsequent addresses
must lie within the start address plus the count.
After the final buffer data is given, a Write Confirm
command is issued. This initiates the WSM to begin
copying the buffer data to the flash memory. If a
command other than Write Confirm is written to the
device, an “Invalid Command/Sequence” error will
be generated and Status Register bits SR.5 and
SR.4 will be set to “1.” For additional buffer writes,
issue another Write to Buffer setup command and
check XSR.7. The write buffers can be loaded while
the WSM is busy as long as XSR.7 indicates that a
buffer is available. Refer to Figure 7 for the Write to
Buffer flowchart.
When programming is complete, Status Register bit
SR.4 should be checked. If a programming error is
detected, the Status Register should be cleared.
The internal WSM verify only detects errors for “1”s
that do not successfully program to “0”s. The CUI
remains in read Status Register mode until it
receives another command. Refer to Figure 8 for
the Word/Byte Program flowchart.
Also, Reliable byte/word programming can only
occur when VCC = VCC1/2 and VPP = VPPH1/2. In the
absence of this high voltage, contents are protected
against programming. If a byte/word program is
27
ADVANCE INFORMATION
28F160S3, 28F320S3
E
attempted while VPP ≤ VPPLK, Status Register bits
SR.4 and SR.3 will be set to “1.” Successful
SR.7 can determine when the block erase operation
has been suspended. When SR.7 = 1, SR.6 should
also be set to “1,” indicating that the device is in the
erase suspend mode. STS in level RY/BY# mode
will also transition to VOH. Specification tWHRH2
defines the block erase suspend latency.
byte/word
programming
requires
that
the
a
corresponding block lock-bit be cleared. If
byte/word program is attempted when the
corresponding block lock-bit is set and WP# = VIL,
SR.1 and SR.4 will be set to “1.”
At this point, a Read Array command can be written
to read data from blocks other than that which is
suspended. A Program command sequence can
also be issued during erase suspend to program
data in other blocks. Using the Program Suspend
command (see Section 4.12), a program operation
can also be suspended. During a program operation
with block erase suspended, Status Register bit
SR.7 will return to “0” and STS in RY/BY# mode will
transition to VOL. However, SR.6 will remain “1” to
indicate block erase suspend status.
4.10 STS Configuration Command
The Status (STS) pin can be configured to different
states using the STS pin Configuration command.
Once the STS pin has been configured, it remains
in that configuration until another configuration
command is issued or RP# is low. Initially, the STS
pin defaults to level RY/BY# operation where STS
low indicates that the state machine is busy. STS
high indicates that the state machine is ready for a
new operation or suspended.
The only other valid commands while block erase is
suspended are Read Status Register and Block
Erase Resume. After
a Block Erase Resume
To reconfigure the Status (STS) pin to other modes,
the STS pin Configuration command is issued
followed by the desired configuration code. The
three alternate configurations are all pulse mode for
use as a system interrupt as described in Table 14.
command is written to the flash memory, the WSM
will continue the block erase process. Status
register bits SR.6 and SR.7 will automatically clear
and STS in RY/BY# mode will return to VOL. After
the Erase Resume command is written, the device
automatically outputs Status Register data when
read (see Figure 11). VPP must remain at VPPH1/2
and VCC must remain at VCC1/2 (the same VPP and
VCC levels used for block erase) while block erase
is suspended. RP# must also remain at VIH (the
same RP# level used for block erase). Block erase
cannot resume until program operations initiated
during block erase suspend have completed.
For these configurations, bit
0 controls Erase
Complete interrupt pulse, and bit 1 controls Write
Complete interrupt pulse. When the device is
configured in one of the pulse modes, the STS pin
pulses low with a typical pulse width of 250 ns.
Supplying the 00h configuration code with the
Configuration command resets the STS pin to the
default RY/BY# level mode. Refer to Table 14 for
configuration coding definitions. The Configuration
command may only be given when the device is not
busy or suspended. Check SR.7 for device status.
An invalid configuration code will result in both
Status Register bits SR.4 and SR.5 being set to “1.”
4.12 Program Suspend Command
The Program Suspend command allows program
interruption to read data in other flash memory
locations. Once the programming process starts,
writing the Program Suspend command requests
that the WSM suspend the program sequence at a
predetermined point in the algorithm. The device
continues to output Status Register data when read
after the Program Suspend command is written.
Polling Status Register bits SR.7 can determine
when the programming operation has been
suspended. When SR.7 = 1, SR.2 should also be
set to “1”, indicating that the device is in the
program suspend mode. STS in level RY/BY#
mode will also transition to VOH. Specification
4.11 Block Erase Suspend
Command
The Block Erase Suspend command allows
block-erase interruption to read or program data in
another block of memory. Once the block erase
process starts, writing the Block Erase Suspend
command requests that the WSM suspend the
block erase sequence at a predetermined point in
the algorithm. The device outputs Status Register
data when read after the Block Erase Suspend
command is written. Polling Status Register bit
t
WHRH1 defines the program suspend latency.
28
ADVANCE INFORMATION
E
28F160S3, 28F320S3
At this point, a Read Array command can be written
to read data from locations other than that which is
suspended. The only other valid commands while
programming is suspended are Read Status
Register and Program Resume. After a Program
Resume command is written, the WSM will
continue the programming process. Status Register
bits SR.2 and SR.7 will automatically clear and STS
A successful set block lock-bit operation requires
that WP# = VIH. If it is attempted with WP# = VIL,
the operation will fail and SR.1 and SR.4 will be set
to “1.” See Table 13 for write protection alternatives.
Refer to Figure 12 for the Set Block Lock-Bit
flowchart.
in RY/BY# mode will return to VOL
. After the
4.14 Clear Block Lock-Bits
Command
Program Resume command is written, the device
automatically outputs Status Register data when
read. VPP must remain at VPPH1/2 and VCC must
remain at VCC1/2 (the same VPP andVCC levels used
for programming) while in program suspend mode.
RP# must also remain at VIH (the same RP# level
used for programming). Refer to Figure 9 for the
Program Suspend/Resume flowchart.
All set block lock-bits are cleared in parallel via the
Clear Block Lock-Bits command. This command is
valid only when WP# = VIH.
The clear block lock-bits operation is initiated using
a two-cycle command sequence. A Clear Block
Lock-Bits setup command is written followed by a
Confirm command. Then, the device automatically
outputs Status Register data when read (see Figure
13). The CPU can detect completion of the clear
block lock-bits event by analyzing STS in level
RY/BY# mode or Status Register bit SR.7.
4.13 Set Block Lock-Bit Command
A flexible block locking and unlocking scheme is
enabled via a combination of block lock-bits. The
block lock-bits gate program and erase operations.
With WP# = VIH, individual block lock-bits can be
set using the Set Block Lock-Bit command.
This two-step sequence of set-up followed by
execution ensures that block lock-bits are not
accidentally cleared. An invalid Clear Block
Lock-Bits command sequence will result in Status
Register bits SR.4 and SR.5 being set to “1.” Also,
a reliable clear block lock-bits operation can only
occur when VCC = VCC1/2 and VPP = VPPH1/2. If a
clear block lock-bits operation is attempted while
Set block lock-bit is initiated using a two-cycle
command sequence. The Set Block Lock-Bit setup
along with appropriate block or device address is
written followed by the Set Block Lock-Bit Confirm
and an address within the block to be locked. The
WSM then controls the set lock-bit algorithm. After
the sequence is written, the device automatically
outputs Status Register data when read. The CPU
can detect the completion of the set lock-bit event
by analyzing STS in level RY/BY# mode or Status
Register bit SR.7.
V
PP ≤ VPPLK, SR.3 and SR.5 will be set to “1.” In the
absence of these voltages, the block lock-bits
contents are protected against alteration.
A
successful clear block lock-bits operation requires
that WP# = VIH.
If a clear block lock-bits operation is aborted due to
When the set lock-bit operation is complete, Status
Register bit SR.4 should be checked. If an error is
detected, the Status Register should be cleared.
The CUI will remain in read Status Register mode
until a new command is issued.
V
PP or VCC transitioning out of valid range or RP# or
WP# active transition, block lock-bit values are left
in an undetermined state. A repeat of clear block
lock-bits is required to initialize block lock-bit
contents to known values.
This two-step sequence of setup followed by
execution ensures that lock-bits are not accidentally
set. An invalid Set Block Lock-Bit command will
result in Status Register bits SR.4 and SR.5 being
set to “1.” Also, reliable operations occur only when
VCC = VCC1/2 and VPP = VPPH1/2. In the absence of
these voltages, lock-bit contents are protected
against alteration.
When the operation is complete, Status Register bit
SR.5 should be checked. If a clear block lock-bit
error is detected, the Status Register should be
cleared. The CUI will remain in read Status Register
mode until another command is issued.
29
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Table 13. Write Protection Alternatives
Block
Operation
Lock-
Bit
WP#
Effect
Program and
Block Erase
0
1
VIL or VIH
VIL
Block erase and programming enabled
Block is locked. Block erase and programming disabled
Block Lock-Bit override. Block erase and programming enabled
All unlocked blocks are erased
VIH
Full Chip Erase
0,1
X
VIL
VIH
Block Lock-Bit override. All blocks are erased
Set or clear block lock-bit disabled
Set or Clear
X
VIL
Block Lock-Bit
VIH
Set or clear block lock-bit enabled
Table 14. Configuration Coding Definitions
Reserved
Pulse on
Write
Pulse on
Erase
Complete
Complete
bits 7–2
bit 1
bit 0
DQ7–DQ2 = Reserved
DQ7–DQ2 are reserved for future use.
DQ1/DQ0 = STS Pin Configuration Codes
default (DQ1/DQ0 = 00) RY/BY#, level mode
-----used to control HOLD to a memory controller to
prevent accessing a flash memory subsystem while
any flash device's WSM is busy.
00 = default, level mode RY/BY#
(device ready) indication
01 = pulse on Erase complete
configuration 01
ER INT, pulse mode(1)
10 = pulse on Flash Program complete
11 = pulse on Erase or Program Complete
-----used to generate a system interrupt pulse when
any flash device in an array has completed a block
erase or sequence of queued block erases. Helpful
for reformatting blocks after file system free space
reclamation or ‘cleanup’
Configuration Codes 01b, 10b, and 11b are all pulse
mode such that the STS pin pulses low then high
when the operation indicated by the given
configuration is completed.
configuration 10
PR INT, pulse mode(1)
-----used to generate a system interrupt pulse when
any flash device in an array has complete a
program operation. Provides highest performance
for servicing continuous buffer write operations.
Configuration Command Sequences for STS pin
configuration (masking bits D7–D2 to 00h) are as
follows:
Default RY/BY# level mode
ER INT (Erase Interrupt):
Pulse-on-Erase Complete
PR INT (Program Interrupt):
Pulse-on-Flash-Program Complete
B8h, 00h
B8h, 01h
configuration
ER/PR INT, pulse mode(1)
-----used to generate system interrupts to trigger
servicing of flash arrays when either erase or flash
program operations are completed when a common
interrupt service routine is desired.
B8h, 02h
ER/PR INT (Erase or Program Interrupt): B8h, 03h
Pulse-on-Erase or Program Complete
NOTE:
1. When the device is configured in one of the pulse modes, the STS pin pulses low with a typical pulse width of 250 ns.
30
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Table 15. Status Register Definition
WSMS
7
ESS
6
ECLBS
5
BWSLBS
4
VPPS
3
BWSS
2
DPS
1
R
0
NOTES:
SR.7 = WRITE STATE MACHINE STATUS
Check STS in RY/BY# mode or SR.7 to determine
block erase, programming, or lock-bit configuration
completion. SR.6-0 are invalid while SR.7 = “0.”
1 = Ready
0 = Busy
SR.6 = ERASE SUSPEND STATUS
1 = Block erase suspended
0 = Block erase in progress/completed
SR.5 = ERASE AND CLEAR LOCK-BITS STATUS If both SR.5 and SR.4 are “1”s after a block erase
1 = Error in block erasure or clear lock-bits
0 = Successful block erase or clear lock-bits
or lock-bit configuration attempt, an improper
command sequence was entered.
SR.4 = PROGRAM AND SET LOCK-BIT
STATUS
1 = Error in program or block lock-bit
0 = Successful program or set block lock-bit
SR.3 = VPP STATUS
1 = VPP low detect, operation abort
0 = VPP OK
SR.3 does not provide a continuous indication of
V
V
PP level. The WSM interrogates and indicates the
PP level only after a block erase, program, or lock-
bit configuration operation. SR.3 reports accurate
feedback only when VPP = VPPH1/2
.
SR.2 = PROGRAM SUSPEND STATUS
1 = Program suspended
0 = Program in progress/completed
SR.1 = DEVICE PROTECT STATUS
1 = Block Lock-Bit and/or
RP# lock detected, operation abort
0 = Unlock
SR.1 does not provide a continuous indication of
block lock-bit values. The WSM interrogates the
block lock-bit, and WP# only after a block erase,
program, or lock-bit configuration operation. It
informs the system, depending on the attempted
operation, if the block lock-bit is set.
SR.0 = RESERVED FOR FUTURE
ENHANCEMENTS
SR.0 is reserved for future use and should be
masked when polling the Status Register.
Table 16. Extended Status Register Definition
WBS
7
R
6
R
R
R
R
R
1
R
0
5
4
3
2
NOTES:
XSR.7 = WRITE BUFFER STATUS
1 = Write to buffer available
After a Write to buffer command, XSR.7 indicates
that another Write to buffer command is possible.
0 = Write to buffer not available
XSR.6 = RESERVED FOR FUTURE
ENHANCEMENTS
SR.6–0 are reserved for future use and should be
masked when polling the status register
31
ADVANCE INFORMATION
28F160S3, 28F320S3
E
1 = Write buffer available
0 = Write buffer not available
Data = N = word/byte count
N = 0 corresponds to count = 1
Addr = Block Address
Data = write buffer data
Addr = device start address
Data = write buffer data
Addr = device address
Data = D0h
Bus
Operation
Write
Command
Comments
Start
Write to
Buffer
Data = E8h
Addr = Block Address
XSR.7=valid
Set Time-Out
Read
Addr = X
Issue Write Command
E8H, Block Address
No
Standby
Check XSR.7
Read Extended
Status Register
Write
(Note 1, 2)
Write
(Note 3, 4)
Write
(Note 5, 6)
Write
Write Buffer
Time-Out?
0
XSR.7 =
1
Buffer
Write Word or Byte
Count, Block Address
write to flash Addr = X
confirm
Read
Status Register data
Write Buffer Data,
Start Address
CE# & OE# low updates SR
Addr = X
Check SR.7
Standby
1 = WSM ready
0 = WSM busy
X = 0
1. Byte- or word-count values on DQ
the Count register.
2. The device now outputs the Status Register when
read (XSR is no longer available).
are loaded into
0-7
Yes
X = N
3. Write Buffer contents will be programmed at the
device start address or destination flash address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance.
No
Yes
5. The device aborts the Write to Buffer command if the
current address is outside of the original block
address.
6. The Status Register indicates an “improper command
sequence” if the Write to Buffer command is aborted.
Follow this with a Clear Status Register command.
Abort Buffer
Write
Command?
Write to Another
Block Address
Yes
Buffer Write to
Flash Aborted
Yes
No
Write Next Buffer Data,
Full status check can be done after all Erase and
Write sequences complete. Write FFh after the last
operation to reset the device to Read Array mode.
Device Address
X = X + 1
Buffer Write to Flash
Confirm D0H
Another
Buffer
Write?
Issue Read
Status Command
No
Read
Status Register
No
Suspend
Write Loop
Yes
Suspend
Write?
0
SR.7 =
1
Full Status
Check if Desired
Buffer Write to
Flash Complete
Figure 7. Write to Buffer Flowchart
32
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Figure 8. Single Byte/Word Program Flowchart
33
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Figure 9. Program Suspend/Resume Flowchart
34
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Bus
Operation
Write
Command
Comments
Start
Erase Block Data = 28h or 20h
Addr = Block Address
Device
Supports
Queuing
Read
XSR.7=valid
Addr = X
Check XSR.7
Standby
Yes
1 = Erase queue available
0 = No Erase queue available
Erase Block Data = 28H
Addr = Block Address
SR.7=valid; SR.6-0=X
With the device enabled,
OE# low updates SR
Addr = X
Set Time-Out
Write
Read
Issue Block Queue
Erase Command 28H,
Block Address
No
Read Extended Status
Register
Standby
Check XSR.7
1 = Erase queue available
0 = No Erase queue available
Write
(Note 1)
Read
Erase
Confirm
Data = D0H
Addr = X
Status Register data
With the device enabled,
OE# low updates SR
Addr = X
Is Queue
Available?
XSR.7=
Erase Block
Time-Out?
0=No
No
1=Yes
Standby
Check SR.7
1 = WSM ready
0 = WSM busy
Another
Block
Yes
Erase?
1. The Erase Confirm byte must follow Erase Setup when
the Erase Queue status (XSR.7)=0.
Yes
Yes
Full status check can be done after all Erase and Write
sequences complete. Write FFh after the last
operation to reset the device to Read Array mode.
Issue Erase Command
28H Block Address
1=No
Read Extended
Status Register
No
Is Queue
Full?
XSR.7=
Issue Single Block
Erase Command 20H,
Block Address
0=Yes
Write Confirm D0H
Block Address
Write Confirm D0H
Block Address
Another
Block
Erase?
Issue Read
Status Command
No
Read
Status Register
No
Suspend
Erase Loop
Suspend
Erase
0
Yes
SR.7 =
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
Figure 10. Block Erase Flowchart
35
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Start
Bus
Operation
Command
Comments
Write
Read
Erase
Suspend
Data = B0H
Addr = X
Write B0H
Status Register Data
Addr = X
Read
Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
Standby
0
SR.7 =
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
1
Erase
Resume
Data = D0H
Addr = X
Write
0
SR.6 =
Block Erase Completed
1
Read
Write
Read or
Write?
Write
Loop
Read Array
Data
No
Done?
Yes
Write D0H
Write FFH
Block Erase Resumed
Read Array Data
Figure 11. Block Erase Suspend/Resume Flowchart
36
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Start
Bus
Operation
Command
Comments
Set
Data = 60H
Addr = Block Address (Block),
Device Address (Master)
Write 60H,
Block/Device Address
Write
Write
Block/Master
Lock-Bit Setup
Data = 01H (Block),
F1H (Master)
Addr = Block Address (Block),
Device Address (Master)
Set
Write 01H/F1H,
Block/Device Address
Block or Master
Lock-Bit Confirm
Read
Status Register Data
Read
Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Repeat for subsequent lock-bit set operations.
Full status check can be done after each lock-bit set operation
or after a sequence of lock-bit set operations.
Write FFH after the last lock-bit set operation to place device in
read array mode.
1
Full Status
Check if Desired
Set Lock-Bit
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
Command
Comments
Check SR.3
1 = Programming Voltage Error
Detect
Standby
1
SR.3 =
0
Voltage Range Error
Check SR.1
1 = Device Protect Detect
RST# = V
(Set Master Lock-Bit Operation)
IH
Standby
1
RST# = V , Master Lock-Bit Is Set
IH
(Set Block Lock-Bit Operation)
Device Protect Error
SR.1 =
0
Check SR.4,5
Both 1 = Command Sequence Error
Standby
Standby
1
Command Sequence
Error
SR.4,5 =
0
Check SR.4
1 = Set Lock-Bit Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple lock-bits are set
before full status is checked.
If error is detected, clear the Status Register before attempting retry
or other error recovery.
1
SR.4 =
0
Set Lock-Bit Error
Set Lock-Bit Successful
Figure 12. Set Block Lock-Bit Flowchart
37
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Start
Bus
Operation
Command
Comments
Data = 60H
Addr = X
Clear Block
Lock-Bits Setup
Write
Write
Write 60H
Write D0H
Data = D0H
Addr = X
Clear Block
Lock-Bits Confirm
Read
Status Register Data
Read Status
Register
Check SR.7
Standby
1 = WSM Ready
0 = WSM Busy
0
SR.7 =
Write FFH after the Clear Block Lock-Bits operation to place device
to read array mode.
1
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
Command
Comments
Check SR.3
1 = Programming Voltage Error
Detect
Standby
1
SR.3 =
0
Voltage Range Error
Device Protect Error
Check SR.1
1 = Device Protect Detect
Standby
IH
RST# = V , Master Lock-Bit Is Set
1
1
Check SR.4,5
Both 1 = Command Sequence Error
SR.1=
0
Standby
Standby
Check SR.5
1 = Clear Block Lock-Bits Error
Command Sequence
Error
SR.4,5 =
0
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
1
Clear Block Lock-Bits
Error
SR.5 =
0
Clear Block Lock-Bits
Successful
Figure 13. Clear Block Lock-Bits Flowchart
38
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Additionally, for every eight devices, a 4.7 µF
electrolytic capacitor should be placed at the array’s
power supply connection between VCC and GND.
The bulk capacitor will overcome voltage slumps
caused by PC board trace inductance.
5.0 DESIGN CONSIDERATIONS
5.1
Three-Line Output Control
Intel provides three control inputs to accommodate
multiple memory connections: CEX# (CE0#, CE1#),
OE#, and RP#. Three-line control provides for:
5.4
V
Trace on Printed Circuit
PP
Boards
a. Lowest possible memory power dissipation;
b. Data bus contention avoidance.
Updating target-system resident flash memories
requires that the printed circuit board designer pay
attention to VPP power supply traces. The VPP pin
supplies the memory cell current for programming
and block erasing. Use similar trace widths and
layout considerations given to the VCC power bus.
Adequate VPP supply traces and decoupling will
decrease VPP voltage spikes and overshoots.
To use these control inputs efficiently, an address
decoder should enable CEx# while OE# should be
connected to all memory devices and the system’s
READ# control line. This assures that only selected
memory devices have active outputs, while de-
selected memory devices are in standby mode.
RP# should be connected to the system
POWERGOOD signal to prevent unintended writes
during system power transitions. POWERGOOD
should also toggle during system reset.
5.5
V
, V , RP# Transitions
CC PP
Block erase, program, and lock-bit configuration are
not guaranteed if RP# ≠ VIH, or if VPP or VCC fall
5.2
STS and WSM Polling
outside of
a valid voltage range (VCC1/2 and
V
PPH1/2). If VPP error is detected, Status Register bit
STS is an open drain output that should be
connected to VCC by a pull-up resistor to provide a
hardware form of detecting block erase, program,
and lock-bit configuration completion. In default
mode, it transitions low during execution of these
commands and returns to VOH when the WSM has
finished executing the internal algorithm. For
alternate STS pin configurations, see Section 4.10.
STS can be connected to an interrupt input of the
system CPU or controller. It is active at all times.
STS, in default mode, is also VOH when the device
is in block erase suspend (with programming
inactive) or in reset/power-down mode.
SR.3 and SR.4 or SR.5 are set to “1.” If RP#
transitions to VIL during block erase, program, or
lock-bit configuration, STS in level RY/BY# mode
will remain low until the reset operation is complete.
Then, the operation will abort and the device will
enter deep power-down. Because the aborted
operation may leave data partially altered, the
command sequence must be repeated after normal
operation is restored.
5.6
Power-Up/Down Protection
The device offers protection against accidental
block erase, programming, or lock-bit configuration
during power transitions.
5.3
Power Supply Decoupling
Flash memory power switching characteristics
require careful device decoupling. Standby current
levels, active current levels and transient peaks
produced by falling and rising edges of CEX# and
OE# are areas of interest. Two-line control and
proper decoupling capacitor selection will suppress
transient voltage peaks. Each device should have a
0.1 µF ceramic capacitor connected between its
VCC and GND and VPP and GND. These high-
frequency, low-inductance capacitors should be
placed as close as possible to package leads.
A system designer must guard against spurious
writes for VCC voltages above VLKO when VPP is
active. Since both WE# and CEX# must be low for a
command write, driving either input signal to VIH will
inhibit writes. The CUI’s two-step command
sequence architecture provides an added level of
protection against data alteration.
In-system block lock and unlock renders additional
protection during power-up by prohibiting block
erase and program operations. RP# = VIL disables
the device regardless of its control inputs states.
39
ADVANCE INFORMATION
28F160S3, 28F320S3
E
6.0 ELECTRICAL SPECIFICATIONS
NOTICE: This datasheet contains information on products
in the design phase of development. Do not finalize a
design with this information. Revised information will be
published when the product is available. Verify with your
local Intel Sales office that you have the latest datasheet
before finalizing a design
6.1
Absolute Maximum Ratings
Temperature under Bias ................ –40°C to +85°C
Storage Temperature................... –65°C to +125°C
Voltage On Any Pin
*WARNING: Stressing the device beyond the “Absolute
Maximum Ratings” may cause permanent damage. These
are stress ratings only. Operation beyond the “Operating
Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device
reliability.
(except VCC and VPP
)
.................................... –0.5V to + VCC +0.5V(1)
VCC Supply Voltage ............ –0.2V to + VCC+0.5V(1)
VPP Update Voltage during
NOTES:
Block Erase, Flash Write, and
1. All specified voltages are with respect to GND. Minimum
Lock-Bit Configuration ........... –0.2V to +7.0V(2)
DC voltage is –0.5V on input/output pins and –0.2V on
Output Short Circuit Current.....................100 mA(3)
V
CC and VPP pins. During transitions, this level may
undershoot to –2.0V for periods <20 ns. Maximum DC
voltage on input/output pins and VCC is VCC +0.5V
which, during transitions, may overshoot to VCC +2.0V
for periods <20 ns.
2. Maximum DC voltage on VPP may overshoot to +7.0V
for periods <20 ns.
3. Output shorted for no more than one second. No more
than one output shorted at a time.
4. Operating temperature is for extended product defined
by this specification.
6.2
Operating Conditions
Table 17. Temperature and VCC Operating Conditions(1)
Symbol
Parameter
Notes
Min
-40
2.7
3.0
Max
+85
3.6
Unit
°C
V
Test Condition
TA
Operating Temperature
Ambient Temperature
VCC1
VCC Supply Voltage (2.7V to 3.6V)
VCC Supply Voltage (3.3V ± 0.3V)
VCC2
3.6
V
NOTES:
1. Device operations in the VCC voltage ranges not covered in the table produce spurious results and should not be
attempted.
40
ADVANCE INFORMATION
E
28F160S3, 28F320S3
6.2.1
CAPACITANCE
Table 18. Capacitance(1), TA = +25°C, f = 1 MHz
Symbol
Parameter
Input Capacitance
Output Capacitance
Typ
6
Max
8
Unit
Condition
VIN = 0.0V
VOUT = 0.0V
CIN
pF
pF
COUT
8
12
NOTE:
1. Sampled, not 100% tested.
6.2.2
AC INPUT/OUTPUT TEST CONDITIONS
2.7
0.0
OUTPUT
INPUT
1.35
TEST POINTS
1.35
AC test inputs are driven at 2.7V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.35V.
Input rise and fall times (10% to 90%) <10 ns.
Figure 14. Transient Input/Output Reference Waveform for VCC = 2.7V–3.6V
3.0
OUTPUT
INPUT
1.5
TEST POINTS
1.5
0.0
AC test inputs are driven at 3.0V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.5V.
Input rise and fall times (10% to 90%) <10 ns.
Figure 15. Transient Input/Output Reference Waveform for VCC = 3.3V ± 0.3V
(High Speed Testing Configuration)
Test Configuration Capacitance Loading Value
1.3V
Test Configuration
CL (pF)
1N914
VCC = 3.3V ± 0.3V, 2.7V to 3.6V
50
RL = 3.3 k
Ω
DEVICE
UNDER
TEST
OUT
CL
CL Includes Jig
Capacitance
Figure 16. Transient Equivalent Testing
Load Circuit
41
ADVANCE INFORMATION
28F160S3, 28F320S3
E
6.2.3
DC CHARACTERISTICS
Table 19. DC Characteristics, TA = –40oC to +85oC
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
VCC = VCC1/2 Max
IN = VCC1/2 or GND
VCC = VCC1/2 Max
out = VCC1/2 or GND
CMOS Inputs
ILI
Input Load Current
1
±0.5
µA
V
ILO
Output Leakage Current
VCC Standby Current
1
±0.5
µA
µA
V
ICCS
1,3,6
20
100
V
CC = VCC1/2 Max
CEX# = RP# = VCC ± 0.2V
0.2
2
mA
TTL Inputs
V
CC = VCC1/2 Max
CEX# = RP# = VIH
ICCD
VCC Deep Power-Down
Current
1
20
25
µA
RP# = GND ± 0.2V
I
OUT (RY/BY#) = 0 mA
ICCR
VCC Read Current
1,5,6
mA
CMOS Inputs
CC = VCC1/2 Max
V
CEX# = GND
f = 5 MHz, IOUT = 0 mA
30
mA
TTL Inputs
V
CC = VCC1/2 Max
CEX# = VIL
f = 5 MHz, IOUT = 0 mA
ICCW VCC Programming and Set
Lock-Bit Current
1,7
1,7
1,2
17
17
6
mA
mA
mA
VPP = VPPH1/2
VPP = VPPH1/2
CEX# = VIH
ICCE
VCC Block Erase or Clear
Block Lock-Bits Current
ICCWS
VCC Program Suspend or
1
ICCES Block Erase Suspend
Current
IPPS
IPPR
IPPD
VPP Standby or VPP Read
Current
1
± 2
10
± 15
200
5
µA
µA
µA
V
V
PP ≤ VCC
PP ≥ VCC
VPP Deep Power-Down
Current
1
0.1
RP# = GND ± 0.2V
IPPW
IPPE
VPP Program or Set Lock-Bit
Current
1,7
1,7
1
80
40
mA
mA
µA
VPP = VPPH1/2
VPP Block Erase or Clear
Block Lock-Bits Current
VPP = VPPH1/2
IPPWS VPP Program Suspend or
10
200
VPP = VPPH1/2
IPPES Block Erase Suspend
Current
42
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Conditions
Table 19. DC Characteristics (Continued)
Sym
Parameter
Notes
Min
-0.5
2.0
Max
Unit
VIL
VIH
Input Low Voltage
Input High Voltage
7
7
0.8
V
VCC
V
+0.5
VOL
Output Low Voltage
3,7
3,7
3,7
0.4
V
V
V
V
VCC = VCC1/2 Min
OL = 5.8 mA
I
VOH1 Output High Voltage (TTL)
2.4
VCC = VCC1/2 Min
OH = –2.5 mA
I
VOH2 Output High Voltage (CMOS)
0.85 ×
VCC
VCC = VCC1/2 Min
OH = –2.5 mA
I
VCC
0.4
–
VCC = VCC1/2 Min
OH = –100 µA
I
VPPLK VPP Lockout Voltage
VPPH1 VPP Voltage
4,7
4
1.5
3.6
5.5
V
V
V
V
2.7
4.5
2.0
VPPH2 VPP Voltage
4
VLKO VCC Lockout Voltage
8
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominalVCC voltage and TA = +25°C. These currents are
valid for all product versions (packages and speeds).
2.
I
CCWS and ICCES are specified with the device de-selected. If read or programmed while in erase suspend mode, the
device’s current is the sum of ICCWS or ICCES and ICCR or ICCW
3. Includes STS in level RY/BY# mode.
.
4. Block erase, program, and lock-bit configurations are inhibited when VPP ≤ VPPLK, and not guaranteed in the ranges
between VPPLK (max) and VPPH1 (min), between VPPH1 (max) and VPPH2 (min), and above VPPH2 (max).
5. Automatic Power Savings (APS) reduces typical ICCR to 3 mA at 2.7V and 3.3V VCC static operation.
6. CMOS inputs are either VCC ± 0.2V or GND ± 0.2V. TTL inputs are either VIL or VIH
.
7. Sampled, not 100% tested.
8. With VCC ≤ VLKO flash memory writes are inhibited.
43
ADVANCE INFORMATION
28F160S3, 28F320S3
6.2.4
E
-150/-160
AC CHARACTERISTICS - READ-ONLY OPERATIONS
Table 20. AC Read Characteristics (1,5), TA = –40oC to +85oC
Versions(4)
3.3V ± 0.3V VCC -100/-110
(All units in ns unless otherwise noted) 2.7V - 3.6V VCC
Sym Parameter Notes Min Max Min Max Min Max Min Max
-130/-140
-120/-130
#
R1 tAVAV Read/Write Cycle Time
R2 tAVQV Address to Output Delay
R3 tELQV CEX# to Output Delay
16 Mbit
32 Mbit
16 Mbit
32 Mbit
16 Mbit
32 Mbit
1
1
1
1
2
2
2
100
110
120
130
130
140
150
160
100
110
100
110
45
120
130
120
130
50
130
140
130
140
50
150
160
150
160
55
R4 tGLQV OE# to Output Delay
R5 tPHQV RP# High to Output Delay
R6 tELQX CEX# to Output in Low Z
R7 tGLQX OE# to Output in Low Z
R8 tEHQZ CEX# High to Output in High Z
R9 tGHQZ OE# High to Output in High Z
600
600
600
600
3
3
3
3
3
0
0
0
0
0
0
0
0
50
20
50
20
55
25
55
25
R10 tOH Output Hold from Address, CEX#, or
OE# Change, Whichever Occurs First
0
0
0
0
R11 tELFL CEX# Low to BYTE# High or Low
tELFH
3
3
5
5
5
5
R12 tFLQV BYTE# to Output Delay
tFHQV
16 Mbit
100
120
130
150
32 Mbit
3
3
110
30
130
30
140
40
160
40
R13 tFLQZ BYTE# to Output in High Z
NOTES:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. OE# may be delayed up to tELQV-tGLQV after the falling edge of CEX# without impact on tELQV
3. Sampled, not 100% tested.
.
4. See Ordering Information for device speeds (valid operational combinations).
5. See Figures 14 through 16 for testing characteristics.
44
ADVANCE INFORMATION
E
28F160S3, 28F320S3
Note: CEX# is the latter of CE0# and CE1# low or the first of CE0# or CE1# high.
Figure 17. AC Waveform for Read Operations
45
ADVANCE INFORMATION
28F160S3, 28F320S3
E
6.2.5
AC CHARACTERISTICS - WRITE OPERATIONS
Table 21. Write Operations(1,5,6), TA = –40°C to +85°C
Versions(5)
3.3V ± 0.3V,
2.7V–3.6V VCC
Valid for All
Speeds
#
Sym
tPHWL ( PHEL)
tELWL
Parameter
Notes
Min
Max
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
W1
t
RP# High Recovery to WE# (CEX#) Going Low
CEX# Setup to WE# Going Low
(WE# Setup to CEX# Going Low)
WE# Pulse Width
2
1
10
0
W2
W3
t
( WLEL)
tWLWH
50
70
50
50
10
0
t
(CEX# Pulse Width)
( ELEH)
W4
W5
W6
tDVWH ( DVEH)
tAVWH ( AVEH)
tWHEH
t
Data Setup to WE# (CEX# ) Going High
Address Setup to WE# (CEX# ) Going High
CEX# Hold from WE# High
3
3
t
t
(WE# Hold from CEX# High)
( EHWH)
W7
W8
W9
tWHDX ( EHDX)
tWHAX ( EHAX)
tWHWL
t
Data Hold from WE# (CEX# ) High
Address Hold from WE# (CEX# ) High
WE# Pulse Width High
5
t
5
30
25
100
100
0
t
(CEX# Pulse Width High)
( EHEL)
W10
W11
W12
W13
W14
W15
tSHWH ( SHEH)
tVPWH ( VPEH)
tWHGL ( EHGL)
tWHRL ( EHRL)
tQVSL
tQVVL
t
WP# VIH Setup to WE# (CEX# ) Going High
VPP Setup to WE# (CEX# ) Going High
Write Recovery before Read
t
2
t
t
WE# High to STS in RY/BY# Low
WP# VIH Hold from Valid SRD
VPP Hold from Valid SRD, STS in RY/BY# High
100
2,4
2,4
0
0
NOTES:
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid AIN and DIN for block erase, program, or lock-bit configuration.
4.
VPP should be at VPPH1/2 until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).
5. See Ordering Information for device speeds (valid operational combinations).
6. See Figures 14 through 16 for testing characteristics.
46
ADVANCE INFORMATION
E
28F160S3, 28F320S3
NOTES:
A.
B.
C.
D.
E.
F.
V
power-up and standby.
CC
Write block erase or program setup.
Write block erase confirm or valid address and data..
Automated erase or program delay.
Read Status Register data.
Write Read Array command.
CEX# is the latter of CE0# and CE1# low or the first of CE0# or CE1# high.
Figure 18. AC Waveform for Write Operations
47
ADVANCE INFORMATION
28F160S3, 28F320S3
6.2.6 RESET OPERATIONS
E
Figure 19. AC Waveform for Reset Operation
Table 22. Reset AC Specifications(1)
VCC = 2.7V
VCC = 3.3V
#
Sym
Parameter
RP# Pulse Low Time
Notes Min
Max
Min
Max
Unit
P1 tPLPH
100
100
ns
(If RP# is tied to VCC, this specification is
not applicable)
P2 tPLRH
RP# Low to Reset during Block Erase,
Program, or Lock-Bit Configuration
2,3
20
20
µs
µs
P3 t3VPH
VCC at 2.7V to RP# High
50
50
V
CC at 3.0V to RP# High
NOTES:
1.
2.
These specifications are valid for all product versions (packages and speeds).
If RP# is asserted while a block erase, program, or lock-bit configuration operation is not executing, the reset will
complete within t
.
PLPH
3.
A reset time, tPHQV, is required from the latter of STS in RY/BY# mode or RP# going high until outputs are valid.
48
ADVANCE INFORMATION
E
28F160S3, 28F320S3
6.2.7
ERASE, PROGRAM, AND LOCK-BIT CONFIGURATION PERFORMANCE
Table 23. Erase/Write/Lock Performance(3,4)
2.7V–3.6V VCC
3.3V VPP
Notes Typ(1) Max Typ(1) Max Typ(1) Max Units
Version
2.7V VPP
5V VPP
#
Sym
Parameter
Byte/word program time
(using write buffer)
5
5.76 TBD 5.76 TBD 2.76 TBD
µs
W16
tWHQV1 Per byte program time
2
19.89 TBD 19.89 TBD 13.2 TBD
µs
W16
W16
(without write buffer)
tEHQV1
tWHQV1 Per word program time
2
22.17 TBD 22.17 TBD 13.2 TBD
µs
(without write buffer)
tEHQV1
Block program time
(byte mode)
2
2
2
2
1.63 TBD 1.63 TBD 0.87 TBD
0.91 TBD 0.91 TBD 0.44 TBD
0.37 TBD 0.37 TBD 0.16 TBD
0.56 TBD 0.56 TBD 0.42 TBD
sec
sec
sec
sec
W16
W16
W16
W16
Block program time
(word mode)
Block program time
(using write buffer)
tWHQV2 Block erase time
tEHQV2
17.9
35.8
17.9
35.8
13.3
26.6
sec
sec
µs
Full chip erase time 16 Mbit
32 Mbit
W16
tWHQV3 Set Lock-Bit time
tEHQV3
2
2
22.17 TBD 22.17 TBD 13.3 TBD
0.56 TBD 0.56 TBD 0.42 TBD
7.24 10.2 7.24 10.2 6.73 9.48
15.5 21.5 15.5 21.5 12.54 17.54
W16
W16
W16
tWHQV4 Clear block lock-bits time
tEHQV4
sec
µs
tWHRH1 Program suspend latency
tEHRH1 time to read
tWHRH2 Erase suspend latency time
tEHRH2 to read
µs
W16
NOTES:
1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
5. Uses whole buffer.
49
ADVANCE INFORMATION
28F160S3, 28F320S3
E
Table 24. Erase/Write/Lock Performance(3,4)
3.3V ± 0.3V VCC
3.3V VPP 5V VPP
Notes Typ(1) Typ(1)
Max Max
Version
Parameter
#
Sym
Units
Byte/word program time
(using write buffer)
5
2
2
2
2
2
2
5.66
19.51
21.75
1.6
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2.7
12.95
12.95
0.85
0.43
0.18
0.41
TBD
TBD
TBD
TBD
TBD
TBD
TBD
µs
W16
tWHQV1 Per byte program time
tEHQV1 (without write buffer)
µs
µs
W16
W16
W16
W16
W16
W16
W16
tWHQV1 Per word program time
tEHQV1 (without write buffer)
Block program time
(byte mode)
sec
sec
sec
sec
Block program time
(word mode)
0.89
0.36
0.55
Block program time
(using write buffer)
tWHQV2 Block erase time
tEHQV2
17.6
35.2
TBD
TBD
TBD
13.1
26.2
TBD
TBD
TBD
sec
sec
µs
Full chip erase time 16 Mbit
32 Mbit
tWHQV3 Set Lock-Bit time
tEHQV3
2
2
22.75
12.95
W16
W16
W16
tWHQV4 Clear block lock-bits time
tEHQV4
0.55
7.1
TBD
10
0.41
6.6
TBD
9.3
sec
µs
tWHRH1 Program suspend latency
tEHRH1 time to read
tWHRH2 Erase suspend latency time
tEHRH2 to read
15.2
21.1
12.3
17.2
µs
W16
NOTES:
1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
5. Uses whole buffer.
50
ADVANCE INFORMATION
E
28F160S3, 28F320S3
APPENDIX A
DEVICE NOMENCLATURE AND ORDERING
INFORMATION
Product line designator for all Intel Flash products
TE28 F 1 6 0S3 - 1 0 0
Package
Access Speed (ns)
DT = Extended Temp.
56-Lead SSOP
TE = Extended Temp.
56-Lead TSOP
GT = Extended Temp.
56-Bump µBGA*
package
100 ns (3.3V), 120 ns (2.7V-3.6V)
Device Type
3 = 2.7V / 3.3V VCC
2.7V/3.3V / 5V VPP
Product Family
S = FlashFile™ Memory
Device Density
160 = 16-Mbit
320 = 32-Mbit
Order Code by Density
Valid Operational Combinations
2.7V-3.6V VCC
50 pF load
(16 Mb / 32 Mb)
3.3V ± 0.3V VCC
16 Mb
32 Mb
50 pF load
(16 Mb / 32 Mb)
56-lead TSOP S3-100
56-lead TSOP S3-130
56-lead SSOP S3-100
56-lead SSOP S3-130
56-bump µBGA S3-100
56-bump µBGA S3-130
56-lead TSOP S3-110
56-lead TSOP S3-140
56-lead SSOP S3-110
56-lead SSOP S3-140
56-bump µBGA S3-110
56-bump µBGA S3-140
-120 / -130
-150 / -160
-120 / -130
-150 / -160
-120 / -130
-150 / -160
-100 / -110
-130 / -140
-100 / -110
-130 / -140
-100 / -110
-130 / -140
51
ADVANCE INFORMATION
28F160S3, 28F320S3
E
APPENDIX B
(1,2)
ADDITIONAL INFORMATION
Order Number
290609
Document/Tool
Word-Wide FlashFile MemoryTM Family 28F160S5, 28F320S5 Datasheet
AP-645 28F160S3/S5 Compatibility with 28F016SA/SV
AP-646 Common Flash Interface (CFI) and Command Sets
Common Flash Interface Specification
292203
292204
www.mcif.com
290528
28F016SV 16-Mb (1Mbit x 16, 2 Mbit x 8) FlashFile™ Memory Datasheet
28F016SA 16-Mb (1Mbit x 16, 2 Mbit x 8) FlashFile™ Memory Datasheet
16-Mbit Flash Product Family User’s Manual
290489
297372
292123
AP-374 Flash Memory Write Protection Techniques
292144
AP-393 28F016SV Compatibility with 28F016SA
292159
AP-607 Multi-Site Layout Planning with Intel’s FlashFile™ Components,
Including ROM Capability
292163
AP-610 Flash Memory In-System Code and Data Update Techniques
Contact Intel/Distribution
Sales Office
Mechanical Specification µBGA* Package Preliminary Guide
Contact Intel/Distribution
Sales Office
Surface Mount and PCB Guidelines for µBGA* Packaging
Contact Intel/Distribution
Sales Office
Multi-Site Layouts: 56-lead TSOP to 56-bump µBGA* package
56-lead SSOP to 56-bump µBGA package
Contact Intel/Distribution
Sales Office
CFI - Common Flash Interface Reference Code
NOTES:
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should
contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.intel.com for technical documentation and tools.
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