NZ48F000BBY [INTEL]
StrataFlash Wireless Memory; 的StrataFlash无线存储器
| 型号： | NZ48F000BBY |
| 厂家： | 
INTEL |
| 描述： | StrataFlash Wireless Memory |
| 文件： | 总106页 (文件大小：1700K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Intel StrataFlash® Wireless Memory
(L18)
28F640L18, 28F128L18, 28F256L18
Datasheet
Product Features
■ High performance Read-While-Write/Erase
— 85 ns initial access
■ Security
— OTP space:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
— 54 MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— Absolute write protection: V = GND
PP
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 1.8 V low-power buffered programming at
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
7 µs/byte (Typ)
■ Architecture
— Intel® Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64-Mbit and 128-
Mbit devices
— Common Flash Interface (CFI) capable
— Multiple 16-Mbit partitions: 256-Mbit devices
— Four 16-Kword parameter blocks: top or
bottom configurations
■ Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (0.13 µm)
■ Density and Packaging
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or
Read-While-Erase (RWE)
— 64-, 128-, and 256-Mbit density in VF BGA
packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
— Status Register for partition and device status
■ Power
— V (core) = 1.7 V - 2.0 V
CC
— V
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
CCQ
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)
at 54 MHz
— Automatic Power Savings mode
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-
voltage, multi-level cell (MLC) technology.
The multiple-partition architecture enables background programming or erasing to occur in one
partition while code execution or data reads take place in another partition. This dual-operation
architecture also allows a system to interleave code operations while program and erase
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system
designers to choose the size of the code and data segments. The L18 wireless memory device is
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-
standard chip scale packaging.
Order Number: 251902, Revision: 009
April 2005
Legal Lines and Disclaimers
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or
in nuclear facility applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by
estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Intel literature may be obtained by calling
1-800-548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © 2005, Intel Corporation. All Rights Reserved.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Contents
1.0 Introduction ...............................................................................................................................9
1.1
1.2
1.3
Nomenclature .......................................................................................................................9
Acronyms..............................................................................................................................9
Conventions........................................................................................................................10
2.0 Functional Overview ............................................................................................................11
3.0 Package Information............................................................................................................12
3.1
3.2
VF BGA Packages..............................................................................................................12
SCSP Packages .................................................................................................................14
4.0 Ballout and Signal Descriptions......................................................................................16
4.1
4.2
4.3
Signal Ballout......................................................................................................................16
4.1.1 VF BGA Package Ballout.......................................................................................16
4.1.2 SCSP Package Ballout ..........................................................................................18
Signal Descriptions.............................................................................................................19
4.2.1 VF BGA Package Signal Descriptions...................................................................19
4.2.2 128/0 and 256/0 SCSP Package Signal Descriptions ...........................................21
Memory Map.......................................................................................................................23
5.0 Maximum Ratings and Operating Conditions ...........................................................25
5.1
5.2
Absolute Maximum Ratings................................................................................................25
Operating Conditions..........................................................................................................25
6.0 Electrical Specifications.....................................................................................................26
6.1
6.2
DC Current Characteristics.................................................................................................26
DC Voltage Characteristics.................................................................................................27
7.0 AC Characteristics................................................................................................................28
7.1
7.2
7.3
7.4
7.5
7.6
7.7
AC Test Conditions.............................................................................................................28
Capacitance........................................................................................................................29
AC Read Specifications (VCCQ = 1.35 V – 2.0 V) ............................................................30
AC Read Specifications for 64-Mbit and 128-Mbit Densities (VCCQ = 1.7 V – 2.0 V) .......31
AC Read Specifications for 256-Mbit Density (VCCQ = 1.7 V – 2.0 V) .............................32
AC Write Specifications ......................................................................................................37
Program and Erase Characteristics....................................................................................41
8.0 Power and Reset Specifications .....................................................................................42
8.1
8.2
8.3
8.4
Power Up and Down...........................................................................................................42
Reset ..................................................................................................................................42
Power Supply Decoupling...................................................................................................43
Automatic Power Saving.....................................................................................................44
9.0 Device Operations.................................................................................................................45
9.1
Bus Operations...................................................................................................................45
9.1.1 Reads ....................................................................................................................46
9.1.2 Writes.....................................................................................................................46
9.1.3 Output Disable .......................................................................................................46
Datasheet
Intel StrataFlash® Wireless Memory (L18)
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April 2005
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Intel StrataFlash® Wireless Memory (L18)
9.1.4 Standby..................................................................................................................46
9.1.5 Reset .....................................................................................................................46
Device Commands .............................................................................................................47
Command Definitions .........................................................................................................48
9.2
9.3
10.0 Read Operations....................................................................................................................50
10.1 Asynchronous Page-Mode Read........................................................................................50
10.2 Synchronous Burst-Mode Read..........................................................................................50
10.2.1 Burst Suspend .......................................................................................................51
10.3 Read Configuration Register (RCR) ...................................................................................51
10.3.1 Read Mode ............................................................................................................52
10.3.2 Latency Count........................................................................................................52
10.3.3 WAIT Polarity.........................................................................................................54
10.3.3.1 WAIT Signal Function ............................................................................54
10.3.4 Data Hold...............................................................................................................55
10.3.5 WAIT Delay............................................................................................................56
10.3.6 Burst Sequence .....................................................................................................56
10.3.7 Clock Edge ............................................................................................................57
10.3.8 Burst Wrap.............................................................................................................57
10.3.9 Burst Length ..........................................................................................................57
11.0 Programming Operations ..................................................................................................58
11.1 Word Programming.............................................................................................................58
11.1.1 Factory Word Programming...................................................................................59
11.2 Buffered Programming........................................................................................................59
11.3 Buffered Enhanced Factory Programming .........................................................................60
11.3.1 Buffered EFP Requirements and Considerations..................................................60
11.3.2 Buffered EFP Setup Phase....................................................................................61
11.3.3 Buffered EFP Program/Verify Phase.....................................................................61
11.3.4 Buffered EFP Exit Phase.......................................................................................62
11.4 Program Suspend...............................................................................................................62
11.5 Program Resume................................................................................................................63
11.6 Program Protection.............................................................................................................63
12.0 Erase Operations...................................................................................................................64
12.1 Block Erase.........................................................................................................................64
12.2 Erase Suspend ...................................................................................................................64
12.3 Erase Resume....................................................................................................................65
12.4 Erase Protection .................................................................................................................65
13.0 Security Modes.......................................................................................................................66
13.1 Block Locking......................................................................................................................66
13.1.1 Lock Block .............................................................................................................66
13.1.2 Unlock Block..........................................................................................................66
13.1.3 Lock-Down Block...................................................................................................66
13.1.4 Block Lock Status ..................................................................................................67
13.1.5 Block Locking During Suspend..............................................................................67
13.2 Protection Registers ...........................................................................................................68
13.2.1 Reading the Protection Registers..........................................................................69
13.2.2 Programming the Protection Registers..................................................................70
13.2.3 Locking the Protection Registers...........................................................................70
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Intel StrataFlash® Wireless Memory (L18)
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Datasheet
Intel StrataFlash® Wireless Memory (L18)
14.0 Dual-Operation Considerations.......................................................................................71
14.1 Memory Partitioning............................................................................................................71
14.2 Read-While-Write Command Sequences...........................................................................71
14.2.1 Simultaneous Operation Details ............................................................................72
14.2.2 Synchronous and Asynchronous RWW Characteristics and Waveforms..............72
14.2.2.1 Write operation to asynchronous read transition ...................................72
14.2.2.2 Write to synchronous read operation transition .....................................73
14.2.2.3 Write Operation with Clock Active..........................................................73
14.2.3 Read Operation During Buffered Programming.....................................................73
14.3 Simultaneous Operation Restrictions .................................................................................74
15.0 Special Read States..............................................................................................................75
15.1 Read Status Register..........................................................................................................75
15.1.1 Clear Status Register.............................................................................................76
15.2 Read Device Identifier ........................................................................................................76
15.3 CFI Query ...........................................................................................................................77
Appendix A Write State Machine (WSM)...........................................................................78
Appendix B Flowcharts............................................................................................................85
Appendix C Common Flash Interface ................................................................................93
Appendix D Additional Information...................................................................................103
Appendix E
Ordering Information......................................................................................104
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Revision History
Revision Date Revision
Description
10/15/02
01/20/03
-001
-002
Initial Release
Revised 256-Mbit Partition Size
Revised 256-Mbit Memory Map
Change WAIT function to de-assert during Asynchronous Operations (Asynchronous Reads and all
Writes)
Change WAIT function to active during Synchronous Non-Array Read
Updated all Waveforms to reflect new WAIT function
Revised Section 8.2.2
Added Synchronous Read to Write transition Section
Improved 1.8 Volt I/O Bin 2 speed to 95ns from 105ns
Added new AC specs: R15, R16, R17, R111, R311, R312, W21, and W22
Various text edits
04/11/03
08/04/03
-003
-004
Added SCSP for 128/0 and 256/0 Ball-out and Mechanical Drawing
Changed I
and I
values
CCR
CCS
Added 256-Mbit AC Speed
Changed Program and Erase Spec
Combined the Buffered Programming Flow Chart and Read While Buffered programming Flow
Chart
Revised Read While Buffered Programming Flow Chart
Revised Appendix A Write State Machine
Revised CFI Table 21 CFI Identification
Various text edits.
01/20/04
05/22/04
-005
-006
Various text clarifications, various text edits, block locking state diagram clarification, synchronous
read to write timing clarification, write to synchronous read timing clarification
Minor text edits
Changed Capacitance values
Changed Standby Current (typ), Power Down Current (typ), Erase Suspend Current (typ), and
Automatic Power Savings Current (typ)
Updated Transient Equialent Testing Load Circuit
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
09/02/04
-007
Added Table 7 “Bus Operations Summary” on page 45
Modified Table 32 “L18 SCSP Package Ordering Information” on page 105 and added the following
order items:
* RD48F2000L0YTQ0, RD48F2000L0YBQ0
* RD48F4000L0YTQ0, RD48F4000L0YBQ0
* PF48F3000L0YTQ0, PF48F3000L0YBQ0
* PF48F4000L0YTQ0, PF48F4000L0YBQ0
* NZ48F4000L0YTQ0, NZ48F4000L0YBQ0
* JZ48F4000LOYTQ0, JZ48F4000LOYBQ0
09/29/04
04/22/05
-008
-009
Removed two mechanical drawings for 9x7.7x1.0 mm and 9x11x1.0 mm
Added mechanical drawing Figure 4 “256-Mbit, 88-ball (80-active ball) SCSP Drawing and Dimen-
sions (8x11x1.0 mm)” on page 15
In Table 32 “L18 SCSP Package Ordering Information” on page 105, corrected 256L18 package
size from 8x10x1.2 mm to 8x11x1.2 mm
Removed Bin 2 LC and Frequency Support Tables
Added back VF BGA mechanical drawings
Renamed 256-Mbit UT-SCSP to be 256-Mbit SCSP
Updated Ordering Info
Minor text edits
Converted datasheet to new template
In Table 4 “Bottom Parameter Memory Map” on page 24, corrected 256-Mbit Blk 131 address
range from 100000 - 10FFFF to 800000 - 80FFFF
In Section 5.1, “Absolute Maximum Ratings” on page 25, corrected Voltage on any signal (except
VCC, VPP) from -0.5 V to +3.8 V to -0.5 V to +2.5 V
In Section E.2, “Ordering Information for SCSP” on page 105, corrected package designators for
leaded and lead-free packages from RD/PF to NZ/JZ
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
April 2005
8
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
1.0
Introduction
This document provides information about the Intel StrataFlash® wireless memory device (L18).
This document describes the device features, operation, and specifications.
1.1
Nomenclature
1.8 V: range of 1.7 V – 2.0 V (except where noted)
1.8 V Extended Range: range of 1.35 V – 2.0 V
VPP = 9.0 V: VPP voltage range of 8.5 V – 9.5 V
Block: A group of bits, bytes or words within the flash memory array that erase simultaneously
when the Erase command is issued to the device. The Intel StrataFlash® Wireless Memory (L18)
has two block sizes: 16-Kword, and 64-Kword.
Main block: An array block that is usually used to store code and/or data. Main blocks are larger
than parameter blocks.
Parameter block: An array block that is usually used to store frequently changing data or small
system parameters that traditionally would be stored in EEPROM.
Top parameter device: Previously referred to as a top-boot device, a device with its parameter
partition located at the highest physical address of its memory map. Parameter blocks within a
parameter partition are located at the highest physical address of the parameter partition.
Bottom parameter device: Previously referred to as a bottom-boot device, a device with its
parameter partition located at the lowest physical address of its memory map. Parameter blocks
within a parameter partition are located at the lowest physical address of the parameter partition.
Partition: A group of blocks that share common program/erase circuitry. Blocks within a partition
also share a common status register. If any block within a partition is being programmed or erased,
only status register data (rather than array data) is available when any address within that partition
is read.
Main partition: A partition containing only main blocks.
Parameter partition: A partition containing parameter blocks and main blocks.
1.2
Acronyms
CUI: Command User Interface
MLC: Multi-Level Cell
OTP: One-Time Programmable
PLR: Protection Lock Register
PR: Protection Register
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
9
Intel StrataFlash® Wireless Memory (L18)
RCR: Read Configuration Register
RFU: Reserved for Future Use
SR: Status Register
WSM: Write State Machine
1.3
Conventions
VCC: signal or voltage connection
VCC: signal or voltage level
0x: hexadecimal number prefix
0b: binary number prefix
SR[4]: Denotes an individual register bit.
A[15:0]: Denotes a group of similarly named signals, such as address or data bus.
A5: Denotes one element of a signal group membership, such as an address.
bit: binary unit
byte: eight bits
word: two bytes, or sixteen bits
Kbit: 1024 bits
KByte: 1024 bytes
KWord: 1024 words
Mbit: 1,048,576 bits
MByte: 1,048,576 bytes
MWord: 1,048,576 words
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
2.0
Functional Overview
The Intel StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase
capability with density upgrades through 256-Mbit. This family of devices provides high
performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for
optimum code and data storage.
Each device density contains one parameter partition and several main partitions. The flash
memory array is grouped into multiple 8-Mbit or 16-Mbit partitions. By dividing the flash memory
into partitions, program or erase operations can take place at the same time as read operations.
Although each partition has write, erase, and burst read capabilities, simultaneous operation is
limited to write or erase in one partition while other partitions are in read mode. The Intel
StrataFlash® Wireless Memory (L18) allows burst reads that cross partition boundaries. User
application code is responsible for ensuring that burst reads do not cross into a partition that is
programming or erasing.
Upon initial power up or return from reset, the device defaults to asynchronous page-mode read.
Configuring the Read Configuration Register enables synchronous burst-mode reads. In
synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT
signal provides easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the Intel StrataFlash® Wireless Memory
(L18) incorporates technology that enables fast factory program and erase operations. Designed for
low-voltage systems, the Intel StrataFlash® Wireless Memory (L18) supports read operations with
V
CC at 1.8 volt, and erase and program operations with VPP at 1.8 V or 9.0 V. Buffered Enhanced
Factory Programming (Buffered EFP) provides the fastest flash array programming performance
with VPP at 9.0 volt, which increases factory throughput. With VPP at 1.8 V, VCC and VPP can be
tied together for a simple, ultra-low power design. In addition to voltage flexibility, a dedicated
V
PP connection provides complete data protection when VPP is less than VPPLK.
A Command User Interface (CUI) is the interface between the system processor and all internal
operations of the Intel StrataFlash® Wireless Memory (L18). An internal Write State Machine
(WSM) automatically executes the algorithms and timings necessary for block erase and program.
A Status Register indicates erase or program completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each erase
operation erases one block. The Erase Suspend feature allows system software to pause an erase
cycle to read or program data in another block. Program Suspend allows system software to pause
programming to read other locations. Data is programmed in word increments.
The Intel StrataFlash® Wireless Memory (L18) offers power savings through Automatic Power
Savings (APS) mode and standby mode. The device automatically enters APS following read-cycle
completion. Standby is initiated when the system deselects the device by deasserting CE# or by
asserting RST#. Combined, these features can significantly reduce power consumption.
The Intel StrataFlash® Wireless Memory (L18)’s protection register allows unique flash device
identification that can be used to increase system security. Also, the individual Block Lock feature
provides zero-latency block locking and unlocking.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
3.0
Package Information
3.1
VF BGA Packages
Figure 1.
64- and 128-Mbit, 56-Ball VF BGA Package Drawing and Dimensions
A1 Index
Mark
A1 Index
Mark
D
S1
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
S2
A
B
C
D
E
F
A
B
C
D
E
F
E
e
G
G
b
Top View - Ball Side Down
A1
Bottom View - Ball Side Up
A2
A
Seating
Plane
Y
Side View
Note: Drawing not to scale
Millimeters
Nom
Inches
Nom
Dimensions
Package Height
Ball Height
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along D
Corner to Ball A1 Distance Along E
Symbol
Min
Max Notes
1.000
Min
Max
0.0394
A
A1
A2
b
D
E
e
N
Y
S1
S2
0.150
0.0059
0.665
0.375
7.700
9.000
0.750
56
0.0262
0.0148
0.3031
0.3543
0.0295
56
0.325
7.600
8.900
0.425
7.800
9.100
0.0128
0.2992
0.3504
0.0167
0.3071
0.3583
(64Mb, 128Mb)
(64Mb, 128Mb)
0.100
1.325
2.350
0.0039
0.0522
0.0925
1.125
2.150
1.225
2.250
0.0443
0.0846
0.0482
0.0886
April 2005
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Intel StrataFlash® Wireless Memory (L18)
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Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 2.
256-Mbit, 79-Ball VF BGA Package Drawing and Dimensions
S1
A1 Index
Mark
A1 Index
Mark
D
1 2
3
4
5
6
7 8 9
10 11 1213
8
1312 11 10
9
7
6 5 4 3 2 1
S2
A
B
A
B
C
D
C
D
E
E
E
F
F
G
G
e
b
Top View - Ball Side Down
Bottom View - Ball Side Up
A1
A2
A
Seating
Plane
Y
Side View
Drawing not to scale
Dimensions Table
Millimeters
Nom
Inches
Nom
Dimensions
Symbol
Min
Max Notes
Min
Max
Package Height
Ball Height
A
A1
A2
b
1.000
0.0394
0.150
0.0059
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along D
Corner to Ball A1 Distance Along E
0.665
0.375
11.000
9.000
0.750
79
0.0262
0.0148
0.4331
0.3543
0.0295
79
0.325
10.900
8.900
0.425
11.100
9.100
0.0128
0.4291
0.3504
0.0167
0.4370
0.3583
(256Mb)
(256Mb)
D
E
e
N
Y
S1
S2
0.100
1.100
2.350
0.0039
0.0433
0.0925
0.900
2.150
1.000
2.250
0.0354
0.0846
0.0394
0.0886
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
3.2
SCSP Packages
Figure 3.
128-Mbit, 88-ball (80-active ball) SCSP Drawing and Dimensions (8x10x1.2 mm)
A1 Index
Mark
S1
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
S2
A
A
B
C
D
B
C
D
E
F
E
F
D
e
G
G
H
H
J
J
K
K
L
L
M
M
b
E
Bottom View- Ball
Up
Top View - Ball Down
A2
A1
A
Y
Drawing not to scale.
Millimeters
Nom
Inches
Nom
Dimensions
Package Height
Ball Height
PackageBody Thickness
Ball (Lead) Width
PackageBody Length
PackageBody Width
Pitch
Symbol
A
Min
Max Notes Min
1.200
Max
0.0472
A1
A2
b
D
E
0.200
0.0079
0.860
0.375
10.000
8.000
0.800
88
0.0339
0.0148
0.3937
0.3150
0.0315
88
0.325
9.900
7.900
0.425
10.100
8.100
0.0128
0.3898
0.3110
0.0167
0.3976
0.3189
e
N
Ball(Lead) Count
Seating Plane Coplanarity
Cornerto BallA1 Distance Along E
Cornerto BallA1 Distance Along D
Y
S1
S2
0.100
1.300
0.700
0.0039
0.0512
0.0276
1.100
0.500
1.200
0.600
0.0433
0.0197
0.0472
0.0236
April 2005
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Intel StrataFlash® Wireless Memory (L18)
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Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 4.
256-Mbit, 88-ball (80-active ball) SCSP Drawing and Dimensions (8x11x1.0 mm)
A1 Index
Mark
S1
8
7
6
5
4
3
2
1
2
3
4
5
6
7
8
1
S2
A
A
B
C
D
B
C
D
E
F
E
F
D
e
G
H
G
H
J
J
K
K
L
L
M
M
b
E
Top View - Ball Down
Bottom View - Ball Up
A
A2
A1
Y
Drawing not to scale.
Note: Dimensions A1, A2, and b are preliminary
Millimeters
Nom
Inches
Nom
Dimens ions
Package Height
S ymbol
A
Mi n
Max Notes
1.00
Mi n
Max
0.0394
Ball Height
Package Body Thickness
Ball (Lead) Width
Package Body Length
Package Body Width
Pitch
A1
A2
b
D
E
0.117
0.0046
0.740
0.350
11.00
8.00
0.80
88
0.0291
0.0138
0.4331
0.3150
0.0315
88
0.300
10.900
7.900
0.400
11.100
8.100
0.0118
0.4291
0.3110
0.0157
0.4370
0.3189
e
N
Ball (Lead) Count
Seating Plane Coplanarity
Corner to Ball A1 Distance Along E
Corner to Ball A1 Distance Along D
Y
S1
S2
0.100
1.300
1.200
0.0039
0.0512
0.0472
1.100
1.000
1.200
1.100
0.0433
0.0394
0.0472
0.0433
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
15
Intel StrataFlash® Wireless Memory (L18)
4.0
Ballout and Signal Descriptions
4.1
Signal Ballout
This section includes signal ballouts for the following packages:
• VF BGA Package Ballout
• SCSP Package Ballout
4.1.1
VF BGA Package Ballout
The Intel StrataFlash® Wireless Memory (L18) is available in a VF BGA package with 0.75 mm
ball-pitch. Figure 5 shows the ballout for the 64-Mbit and 128-Mbit devices in the 56-ball VF BGA
package with a 7x8 active-ball matrix. Figure 6 shows the device ballout for the 256-Mbit device in
the 63-ball VF BGA package with a 7x9 active-ball matrix. Both package densities are ideal for
space-constrained board applications
Figure 5.
7x8 Active-Ball Matrix for 64-, and 128-Mbit Densities in VF BGA Packages
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
A
A
B
C
D
E
F
A11
A8
A9
VSS
A20
VCC
CLK
VPP
A18
A17
A6
A5
A4
A3
A4
A3
A6
A5
A18
A17
VPP
VCC
CLK
VSS
A20
A8
A9
A11
A12
B
A12
RST#
RST#
C
A13
A10
A14
A21
WAIT
D6
ADV#
A16
D4
WE#
D12
A19
A7
A22
CE#
D0
A2
A1
A2
A1
A7
A22
CE#
D0
A19
WE#
D12
ADV#
A16
A21
WAIT
D6
A10
A14
A13
A15
D
WP#
WP#
A15
E
VCCQ
F
D4
VCCQ
D15
D2
D10
D3
D1
D9
A0
A0
D1
D9
D2
D10
D3
D15
OE#
OE#
VSS
G
D14
D13
D5
D11
D11
D13
D5
D14
VSS
D7
G
D7
VSSQ
VCC
VCCQ
D8
VSSQ
VSSQ
D8
VCCQ
VCC
VSSQ
VFBGA 7x8
Top View - Ball Side Down
VFBGA 7x8
Bottom View - Ball Side Up
Note: On lower-density devices, upper-address balls can be treated as NC. (e.g., for 64-Mbit density, A22 will be NC)
April 2005
16
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 6.
7x9 Active-Ball Matrix for 256-Mbit Density in VF BGA Package
1
1
13
12
11
10
9
8
7
6
5
4
3
2
2
3
4
5
6
7
8
9
10
11
12
13
A
B
A
B
DU
DU
DU
DU
RFU
RFU
A4
A6
A5
A7
A18
VPP
VCC VSS
CLK A20
A8
A9
A11
A12
DU
DU
DU
DU
DU
DU
DU
DU
A11
A12
A8
A9
VSS VCC
A20 CLK
VPP A18
RST# A17
A6
A5
A4
A3
RFU
RFU
DU
DU
DU
DU
A3
A17 RST#
C
D
E
C
D
E
A10 A21 ADV#
A25
A24
A2
A1
A19 WE# ADV# A21 A10
A13
A15
A13
A15
WE# A19
D12 WP#
A7
A2
A1
A25
A24
A22 WP# D12
A16 WAIT A14
A14 WAIT
A16
D4
A22
D15
D6
A23
A0
CE#
D0
D1
D9
D2
D4
D6
D15 VCCQ
VCCQ
D2
D1
D9
CE#
D0
A0
A23
F
F
DU
DU
DU
DU
DU
DU
DU
DU
RFU
OE#
D10
D11 D13
D14
VSS
DU
DU
DU
DU
DU
DU
DU
DU
VSS D14
D7 VSSQ
D13 D11
D10
OE# RFU
G
G
RFU VSSQ D8 VCCQ D3
Bottom View
VCC D5
VSSQ D7
D5 VCC
D3 VCCQ D8 VSSQ RFU
Top View
-
Ball Side Up
Ball Side Down-
Note: On lower density devices upper address balls can be treated as RFUs. (A24 is for 512-Mbit and A25 is for 1-Gbit
densities). All ball locations are populated.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
17
Intel StrataFlash® Wireless Memory (L18)
4.1.2
SCSP Package Ballout
The L18 wireless memory in QUAD+ ballout device is available in an 88-ball (80-active ball)
Stacked Chip Scale Package (SCSP) for the 128- and 256-Mbit devices. For Mechanical
Information, refer to Section 3.0, “Package Information” on page 12.
Figure 7.
88-Ball (80-Active Ball) SCSP Package Ballout
1
2
3
4
5
6
7
8
DU
DU
DU
DU
A
B
C
A4
A5
A18
R-LB#
A17
A7
A19
A23
A24
A25
V SS
V SS
F1 -V CC F2-V CC
A2 1
A2 2
A9
A11
A12
A13
A15
S -CS 2
CLK
D
E
F
F-V PP ,
A3
R-W E # P1 -CS #
F-V PE N
A2
F-W P #
ADV #
A20
A10
A1
A6
R-UB#
F-RST#
F-WE #
A8
D13
D14
D6
A1 4
W AIT
D7
A16
G
A0
D8
D2
D10
D5
F2-CE #
F2-O E #
VCCQ
H
J
R-O E #
D0
D1
D3
D1 2
D4
S -CS 1# F1-O E #
F1-CE # P 2-CS #
D9
D11
D1 5
K
F3-CE #
V CCQ
S-V CC
P -V CC F2-V CC
V CCQ
P-Mode
L
V S S
DU
VS S
DU
F1-V CC
V S S
V SS
VS S
DU
V SS
DU
M
T o p Vie w - B a ll Sid e D o w n
L e g e n d :
SR AM /PSR AM sp e cific
F la sh sp ecific
G lo b al
April 2005
18
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
4.2
Signal Descriptions
This section includes signal descriptions for the following packages:
• VF BGA Package Signal Descriptions
• SCSP Package Signal Descriptions
4.2.1
VF BGA Package Signal Descriptions
Table 1 describes the active signals used on the Intel StrataFlash® Wireless Memory (L18), VF
BGA package.
Table 1.
Signal Descriptions (Sheet 1 of 2)
Symbol
Type
Name and Function
A[MAX:0]
Input ADDRESS: Device address inputs. 64-Mbit: A[21:0]; 128-Mbit: A[22:0]; 256-Mbit: A[23:0].
DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during memory,
Status Register, Protection Register, and Read Configuration Register reads. Data balls float when the
CE# or OE# are deasserted. Data is internally latched during writes.
Input/
Output
DQ[15:0]
ADV#
ADDRESS VALID: Active-low input. During synchronous read operations, addresses are latched on
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
Input
In asynchronous mode, the address is latched when ADV# going high or continuously flows through if
ADV# is held low.
CHIP ENABLE: Active-low input. CE#-low selects the device. CE#-high deselects the device, placing it
in standby, with DQ[15:0] and WAIT in High-Z.
CE#
CLK
OE#
RST#
Input
CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode and
Input increments the internal address generator. During synchronous read operations, addresses are latched
on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
OUTPUT ENABLE: Active-low input. OE#-low enables the device’s output data buffers during read
cycles. OE#-high places the data outputs in High-Z and WAIT in High-Z.
Input
RESET: Active-low input. RST# resets internal automation and inhibits write operations. This provides
Input data protection during power transitions. RST#-high enables normal operation. Exit from reset places
the device in asynchronous read array mode.
WAIT: Indicates data valid in synchronous array or non-array burst reads. Configuration Register bit 10
(RCR[10], WT) determines its polarity when asserted. With CE# and OE# at V , WAIT’s active output
IL
is V or V when CE# and OE# are asserted. WAIT is high-Z if CE# or OE# is V .
OL
OH
IH
WAIT
Output
Input
•
•
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
In asynchronous page mode, and all write modes, WAIT is deasserted.
WRITE ENABLE: Active-low input. WE# controls writes to the device. Address and data are latched on
the rising edge of WE#.
WE#
WP#
WRITE PROTECT: Active-low input. WP#-low enables the lock-down mechanism. Blocks in lock-down
Input cannot be unlocked with the Unlock command. WP#-high overrides the lock-down function enabling
blocks to be erased or programmed using software commands.
Erase and Program Power: A valid voltage on this pin allows erasing or programming. Memory
contents cannot be altered when V ≤ V
. Block erase and program at invalid V voltages should
PP
PPLK
PP
not be attempted.
Set V = V for in-system program and erase operations. To accommodate resistor or diode drops
PP
CC
Power
/lnput
VPP
from the system supply, the V level of V can be as low as V
min. V must remain above
IH
PP
PPL PP
V
min to perform in-system program or erase. VPP may be 0 V during read operations.
PPL
V
can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500 cycles.
PPH
VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of this pin at
9 V may derate flash performance/behavior.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
19
Intel StrataFlash® Wireless Memory (L18)
Table 1.
Signal Descriptions (Sheet 2 of 2)
Symbol
Type
Name and Function
Device Core Power Supply: Core (logic) source voltage. Writes to the flash array are inhibited when
≤ V . Operations at invalid V voltages should not be attempted.
VCC
Power
Power
V
CC
LKO
CC
Output Power Supply: Output-driver source voltage. This ball can be tied directly to V if operating
CC
VCCQ
within V range.
CC
VSS
Power Ground: Ground reference for device logic voltages. Connect to system ground.
Power Ground: Ground reference for device output voltages. Connect to system ground.
VSSQ
Do Not Use: Do not use this ball. This ball should not be connected to any power supplies, signals or
other balls, and must be left floating.
DU
—
RFU
—
Reserved for Future Use: Reserved by Intel for future device functionality and enhancement.
April 2005
20
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
4.2.2
128/0 and 256/0 SCSP Package Signal Descriptions
Table 2 describes the active signals used on the 128/0 and 256/0 SCSP.
Table 2.
Device Signal Descriptions for SCSP (Sheet 1 of 2)
Symbol
Type
Description
ADDRESS INPUTS: Inputs for all die addresses during read and write operations.
A[Max:0]
DQ[15:0]
Input
•
•
128-Mbit Die: A[Max] = A22
256-Mbit Die: A[Max] = A23
DATA INPUTS/OUTPUTS: Inputs data and commands during write cycles, outputs data during read
cycles. Data signals float when the device or its outputs are deselected. Data is internally latched
during writes.
Input/
Output
FLASH CHIP ENABLE: Low-true: selects the associated flash memory die. When asserted, flash
internal control logic, input buffers, decoders, and sense amplifiers are active. When deasserted, the
associated flash die is deselected, power is reduced to standby levels, data and WAIT outputs are
placed in high-Z state.
F1-CE#
F2-CE#
F3-CE#
Input
F1-CE# selects the flash die.
F2-CE# and F3-CE# are available on stacked combinations with two or three flash dies else they are
RFU. They each can be tied high to VCCQ through a 10K-ohm resistor for future design flexibility.
SRAM CHIP SELECTS: When both SRAM chip selects are asserted, SRAM internal control logic,
input buffers, decoders, and sense amplifiers are active. When either/both SRAM chip selects are
deasserted (S-CS1# = V or S-CS2 = V ), the SRAM is deselected and its power is reduced to
S-CS1#
S-CS2
Input
Input
IH
IL
standby levels.
Treat this signal as NC (No Connect) for this device.
PSRAM CHIP SELECT: Low-true; when asserted, PSRAM internal control logic, input buffers,
decoders, and sense amplifiers are active. When deasserted, the PSRAM is deselected and its power
is reduced to standby levels.
P-CS#
Treat this signal as NC (No Connect) for this device.
FLASH OUTPUT ENABLE: Low-true; enables the flash output buffers. OE#-high disables the flash
output buffers, and places the flash outputs in High-Z.
F1-OE#
F2-OE#
Input
Input
F1-OE# controls the outputs of the flash die.
F2-OE# is available on stacked combinations with two or three flash dies else it is RFU. It can be
pulled high to VCCQ through a 10K-ohm resistor for future design flexibility.
RAM OUTPUT ENABLE: Low-true; R-OE#-low enables the selected RAM output buffers. R-OE#-high
disables the RAM output buffers, and places the selected RAM outputs in High-Z.
R-OE#
Treat this signal as NC (No Connect) for this device.
FLASH WRITE ENABLE: Low-true; WE# controls writes to the selected flash die. Address and data
are latched on the rising edge of WE#.
WE#
Input
Input
RAM WRITE ENABLE: Low-true; R-WE# controls writes to the selected RAM die.
R-WE#
Treat this signal as NC (No Connect) for this device.
FLASH CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode
and increments the internal address generator. During synchronous read operations, addresses are
latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs
first.
CLK
Input
FLASH WAIT: Indicates data valid in synchronous array or non-array burst reads. Configuration
Register bit 10 (RCR[10], WT) determines its polarity when asserted. With CE# and OE# at V ,
IL
WAIT’s active output is V or V when CE# and OE# are asserted. WAIT is high-Z if CE# or OE# is
OL
OH
V
.
IH
WAIT
Output
•
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
•
In asynchronous page mode, and all write modes, WAIT is deasserted.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
21
Intel StrataFlash® Wireless Memory (L18)
Table 2.
Device Signal Descriptions for SCSP (Sheet 2 of 2)
FLASH WRITE PROTECT: Low-true; WP# enables/disables the lock-down protection mechanism of
the selected flash die. WP#-low enables the lock-down mechanism - locked down blocks cannot be
unlocked with software commands. WP#-high disables the lock-down mechanism, allowing locked
down blocks to be unlocked with software commands.
WP#
Input
FLASH ADDRESS VALID: Active-low input. During synchronous read operations, addresses are
latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs
first.
ADV#
Input
In asynchronous mode, the address is latched when ADV# going high or continuously flows through if
ADV# is held low.
RAM UPPER / LOWER BYTE ENABLES: Low-true; During RAM reads, R-UB#-low enables the RAM
high order bytes on DQ[15:8], and R-LB#-low enables the RAM low-order bytes on DQ[7:0].
R-UB#
R-LB#
Input
Input
Input
Treat this signal as NC (No Connect) for this device.
FLASH RESET: Low-true; RST#-low initializes flash internal circuitry and disables flash operations.
RST#-high enables flash operation. Exit from reset places the flash in asynchronous read array mode.
RST#
PSRAM MODE: Low-true; P-MODE is used to program the configuration register, and enter/exit low
power mode.
P-Mode
Treat this signal as NC (No Connect) for this device.
Flash Program/Erase Power: A valid voltage on this pin allows erasing or programming. Memory
contents cannot be altered when V ≤ V
. Block erase and program at invalid V voltages should
PP
PPLK
PP
not be attempted.
Set V = V for in-system program and erase operations. To accommodate resistor or diode drops
PP
CC
VPP,
from the system supply, the V level of V can be as low as V
min. V must remain above
Power/
Input
IH
PP
PPL PP
V
min to perform in-system flash modification. VPP may be 0 V during read operations.
PPL
VPEN
V
can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500
PPH
cycles. VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of
this pin at 9 V may reduce block cycling capability.
VPEN (Erase/Program/Block Lock Enables) is not available for L18 products.
Flash Logic Power: F1-VCC supplies power to the core logic of flash die #1; F2-VCC supplies power
F1-VCC
F2-VCC
Power
to the core logic of flash die #2. Write operations are inhibited when V ≤ V
. Device operations at
CC
LKO
invalid V voltages should not be attempted.
CC
SRAM Power Supply: Supplies power for SRAM operations.
S-VCC
P-VCC
Power
Power
Treat this signal as NC (No Connect) for this device.
PSRAM Power Supply: Supplies power for PSRAM operations.
Treat this signal as NC (No Connect) for this device.
VCCQ
VSS
Power
Power
Flash I/O Power: Supply power for the input and output buffers.
Ground: Connect to system ground. Do not float any VSS connection.
Reserved for Future Use: Reserve for future device functionality/ enhancements. Contact Intel
regarding their future use.
RFU
—
DU
NC
—
—
Do Not Use: Do not connect to any other signal, or power supply; must be left floating.
No Connect: No internal connection; can be driven or floated.
April 2005
22
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
4.3
Memory Map
See Table 3 and Table 4. The memory array is divided into multiple partitions; one parameter
partition and several main partitions:
• 64-Mbit device. This contains eight partitions: one 8-Mbit parameter partition, seven 8-Mbit
main partitions.
• 128-Mbit device. This contains sixteen partitions: one 8-Mbit parameter partition, fifteen 8-
Mbit main partitions.
• 256-Mbit device. This contains sixteen partitions: one 16-Mbit parameter partition, fifteen 16-
Mbit main partitions.
Table 3.
Top Parameter Memory Map
Size (KW) Blk
64-Mbit
Size (KW) Blk
128-Mbit
43
16
16
16
16
64
66 3FC000-3FFFFF
65 3F8000-3FBFFF
64 3F4000-3F7FFF
63 3F0000-3F3FFF
62 3E0000-3EFFFF
16 130 7FC000-7FFFFF
16 129 7F8000-7FBFFF
16 128 7F4000-7F7FFF
16 127 7F0000-7F3FFF
64 126 7E0000-7EFFFF
64
64
56 380000-38FFFF
55 370000-37FFFF
64 120 780000-78FFFF
64 119 770000-77FFFF
64
0
000000-00FFFF
64
0
000000-00FFFF
Size (KW) Blk
256-Mbit
16 258 FFC000-FFFFFF
16 257 FF8000-FFBFFF
16 256 FF4000-FF7FFF
16 255 FF0000-FF3FFF
64 254 FE0000-FEFFFF
64 240 F00000-FFFFFF
64 239 EF0000-EFFFFF
64 128 800000-80FFFF
64 127 7F0000-7FFFFF
64
0
000000-00FFFF
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
23
Intel StrataFlash® Wireless Memory (L18)
Table 4.
Bottom Parameter Memory Map
Size (KW) Blk
64-Mbit
Size (KW) Blk
128-Mbit
64 66 3F0000-3FFFFF
64 130 7F0000-7FFFFF
64
11 080000-08FFFF
64
11 080000-08FFFF
64 10 070000-07FFFF
64 10 070000-07FFFF
64
16
16
16
16
4
3
2
1
0
010000-01FFFF
00C000-00FFFF
008000-00BFFF
004000-007FFF
000000-003FFF
64
16
16
16
16
4
3
2
1
0
010000-01FFFF
00C000-00FFFF
008000-00BFFF
004000-007FFF
000000-003FFF
Size (KW) Blk
256-Mbit
64 258 FF0000-FFFFFF
64 131 800000-80FFFF
64 130 7F0000-7FFFFF
64 19 100000-10FFFF
64 18 0F0000-0FFFFF
64
16
16
16
16
4
3
2
1
0
010000-01FFFF
00C000-00FFFF
008000-00BFFF
004000-007FFF
000000-003FFF
April 2005
24
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
Parameter
Maximum Rating
–25 °C to +85 °C
Notes
Temperature under bias
Storage temperature
–65 °C to +125 °C
–0.5 V to +2.5 V
–0.2 V to +10 V
–0.2 V to +2.5 V
–0.2 V to +2.5 V
100 mA
Voltage on any signal (except VCC, VPP)
VPP voltage
1
1,2,3
1
VCC voltage
VCCQ voltage
1
Output short circuit current
4
Notes:
1.
Voltages shown are specified with respect to V . Minimum DC voltage is –0.5 V on input/output
SS
signals and –0.2 V on V , V
, and V . During transitions, this level may undershoot to –2.0 V for
CC
CCQ
PP
periods < 20 ns. Maximum DC voltage on V is V +0.5 V, which, during transitions, may overshoot
CC
CC
to V +2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V
is V
CC
CCQ
CCQ
+0.5 V, which, during transitions, may overshoot to V
+2.0 V for periods < 20 ns.
CCQ
2.
3.
Maximum DC voltage on V may overshoot to +14.0 V for periods < 20 ns.
PP
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling
capability.
4.
Output shorted for no more than one second. No more than one output shorted at a time.
5.2
Operating Conditions
Warning:
Operation beyond the “Operating Conditions” is not recommended and extended exposure beyond
the “Operating Conditions” may affect device reliability.
Symbol
Parameter
Min
Max
Units
Notes
T
Operating Temperature
VCC Supply Voltage
–25
+85
2.0
2.0
2.0
2.0
9.5
80
°C
1
C
V
1.7
CC
1.8 V Range
1.7
V
I/O Supply Voltage
CCQ
1.8 V Extended Range
1.35
V
V
V
Voltage Supply (Logic Level)
0.9
PPL
PPH
PPH
PP
V
Factory word programming V
Maximum VPP Hours
8.5
PP
t
V
V
V
V
= V
= V
= V
= V
-
Hours
PP
PP
PP
PP
PPH
2
Main and Parameter Blocks
100,000
-
CC
Block
Erase Main Blocks
Cycles
-
-
1000
2500
Cycles
PPH
PPH
Parameter Blocks
Notes:
1.
2.
T = Case temperature
C
In typical operation, the VPP program voltage is V
. VPP can be connected to 8.5 V – 9.5 V for 1000
PPL
cycles on main blocks and 2500 cycles on parameter blocks.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
25
Intel StrataFlash® Wireless Memory (L18)
6.0
Electrical Specifications
6.1
DC Current Characteristics
1.7 V – 2.0 V
1.35 V - 2.0 V
V
CCQ
Sym
Parameter
Unit
Test Conditions
Notes
Typ
Max
V
V
V
= V Max
CC
CC
I
Input Load Current
-
±1
µA
µA
= V
Max
LI
CCQ
CCQ
= V
or V
SS
IN
CCQ
1
Output
V
V
V
= V Max
CC CC
I
Leakage DQ[15:0], WAIT
Current
-
±1
= V
Max
LO
CCQ
CCQ
= V
or V
SS
IN
CCQ
64-Mbit
15
30
70
V
V
= V Max
CC CC
= V Max
128-Mbit 20
CCQ
CCQ
I
I
V
Standby,
CE# = V
RST# = V
RST# = GND (for I
CCS
CC
CCQ
µA
(for I
)
CCS
Power Down
CCQ
CCD
256-Mbit 25
110
)
CCD
WP# = V
IH
1,2
64-Mbit
15
30
70
V
V
= V Max
CC CC
= V Max
128-Mbit 20
CCQ
CCQ
CE# = V
RST# = V
SSQ
I
APS
µA
CCAPS
CCQ
256-Mbit 25
110
All inputs are at rail to rail (V
CCQ
or V
).
SSQ
Asynchronous Single-Word
f = 5MHz (1 CLK)
13
8
15
9
mA
Page-Mode Read
f = 13 MHz (5 CLK)
mA 4-Word Read
V
= V Max
12
14
16
16
18
20
mA Burst length = 4
CC
CC
mA Burst length = 8 CE# = V
IL
Synchronous Burst Read
f = 40MHz, LC = 3
Average
Read
Current
mA Burst length = 16
OE# = V
IH
I
V
1
CCR
CC
Burst length =
Continuous
Inputs: V or
IL
20
25
mA
V
IH
15
18
21
18
22
25
mA Burst length = 4
mA Burst length = 8
mA Burst length = 16
Synchronous Burst Read
f = 54MHz, LC = 4
Burst Length =
Continuous
22
35
25
27
50
32
mA
V
= V
, program/erase in
, program/erase in
PPH
1,3,4,
7
PP
PPL
mA
mA
V
V
Program Current,
progress
I
I
CC
CCW,
V
= V
1,3,5,
7
Erase Current
CCE
PP
CC
progress
64-Mbit
15
128-Mbit 20
256-Mbit 25
30
70
I
V
V
Program Suspend Current,
Erase Suspend Current
CCWS,
CC
µA CE# = V
; suspend in progress 1,6,3
CCQ
I
CCES
CC
110
I
V
V
V
Standby Current,
PPS,
PP
PP
PP
I
Program Suspend Current,
Erase Suspend Current
0.2
5
µA
V
= V , suspend in progress
PPL
1,3
PPWS,
PP
I
PPES
April 2005
26
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
1.7 V – 2.0 V
1.35 V - 2.0 V
V
CCQ
Sym
Parameter
Unit
Test Conditions
Notes
Typ
Max
I
V
V
Read
2
15
µA
V
V
V
V
V
≤ V
= V
= V
= V
= V
PPR
PP
PP
PP
PP
PP
PP
PP
CC
0.05 0.10
22
0.05 0.10
22
program in progress
PPL,
PPH,
PPL,
PPH,
I
Program Current
Erase Current
mA
PPW
8
program in progress
erase in progress
erase in progress
1,3
I
V
mA
PPE
PP
8
Notes:
1.
2.
3.
4.
5.
6.
All currents are RMS unless noted. Typical values at typical V , T = +25°C.
CC C
I
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
CCS
Sampled, not 100% tested.
V
V
read + program current is the sum of V read and V program currents.
CC
CC
CC CC
read + erase current is the sum of V read and V erase currents.
CC
CC
I
is specified with the device deselected. If device is read while in erase suspend, current is I
CCES
CCES
plus I
CCR
7.
I
, I
measured over typical or max times specified in Section 7.7, “Program and Erase
CCW CCE
Characteristics” on page 41
6.2
DC Voltage Characteristics
V
1.35 V – 2.0 V
1.7 V – 2.0 V
CCQ
Sym
Parameter
Unit
Test Condition
Notes
Min
Max
0.2
Min
Max
0.4
V
Input Low Voltage
Input High Voltage
0
0
V
V
1
1
IL
V
V
– 0.2
V
V
V
– 0.4
V
CCQ
IH
CCQ
CCQ
CCQ
V
V
= V Min
CC
CC
V
Output Low Voltage
Output High Voltage
-
0.1
-
0.1
V
V
= V
Min
OL
CCQ
CCQ
I
= 100 µA
OL
V
V
= V Min
CC
CC
V
V
– 0.1
-
– 0.1
-
= V
Min
OH
CCQ
CCQ
CCQ
CCQ
I
= –100 µA
OH
V
V
V
V
Lock-Out Voltage
Lock Voltage
-
0.4
-
0.4
V
V
V
2
PPLK
PP
V
1.0
0.9
-
-
1.0
0.9
-
-
LKO
CC
V
Lock Voltage
LKOQ
CCQ
NOTES:
1.
2.
V
V
can undershoot to –0.4 V and V can overshoot to V
+ 0.4 V for durations of 20 ns or less.
IL
IH
CCQ
≤ V
inhibits erase and program operations. Do not use V
and V
outside their valid ranges.
PPH
PP
PPLK
PPL
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
27
Intel StrataFlash® Wireless Memory (L18)
7.0
AC Characteristics
7.1
AC Test Conditions
AC Input/Output Reference Waveform
VCCQ
Figure 8.
Input VCCQ/2
Test Points
VCCQ/2 Output
0V
Note: AC test inputs are driven at V
for Logic "1" and 0.0 V for Logic "0." Input/output timing begins/ends
CCQ
at V
/2. Input rise and fall times (10% to 90%) < 5 ns. Worst case speed occurs at V = V Min.
CCQ
CC CC
Figure 9.
Transient Equivalent Testing Load Circuit
Device
Under Test
Out
CL
Notes:
1.
2.
3.
See the following table for component values.
Test configuration component value for worst case speed conditions.
C includes jig capacitance.
L
Table 5.
Test configuration component value for worst case speed conditions
Test Configuration
1.35 V Standard Test
1.7 V Standard Test
C (pF)
L
30
30
April 2005
28
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 10.
Clock Input AC Waveform
R201
VIH
CLK [C]
VIL
R202
R203
CLKINPUT.WMF
7.2
Capacitance
Table 6.
Capacitance
Symbol
Parameter
Signals
Min Typ Max
Unit
Condition
Note
Address, CE#,
WE#, OE#,
RST#, CLK,
ADV#, WP#
Typ temp= 25 °C,
Max temp = 85 °C,
C
Input Capacitance
Output Capacitance
2
2
6
4
7
5
pF
pF
IN
1,2
V
=V
=(0-1.95) V,
CC
CCQ
Silicon die
C
Data, WAIT
OUT
NOTES:
1.
2.
Sampled, not 100% tested.
Silicon die capacitance only, add 1 pF for discrete packages.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
29
Intel StrataFlash® Wireless Memory (L18)
7.3
AC Read Specifications (V
= 1.35 V – 2.0 V)
CCQ
–90
Num
Symbol
Parameter
All DensitiesSpeed
Units
Notes
Min
Max
Asynchronous Specifications
R1
R2
R3
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Read cycle time
90
-
-
ns
ns
ns
Address to output valid
CE# low to output valid
90
90
6
-
R4
R5
OE# low to output valid
-
-
25
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2
1
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
R6
0
0
-
1,3
1,2,3
R7
-
R8
20
20
-
R9
-
1,3
R10
R11
R12
R13
R15
R16
R17
Output hold from first occurring address, CE#, or OE# change
CE# pulse width high
0
17
-
tEHEL
tELTV
tEHTZ
tGLTV
-
1
1
CE# low to WAIT valid
17
17
17
-
CE# high to WAIT high Z
-
1,3
1
OE# low to WAIT valid
-
t
OE# low to WAIT in low-Z
0
-
1,3
1,3
GLTX
t
OE# high to WAIT in high-Z
20
GHTZ
Latching Specifications
R101
R102
R103
R104
R105
R106
R108
R111
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address setup to ADV# high
CE# low to ADV# high
ADV# low to output valid
ADV# pulse width low
7
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
90
-
1
7
ADV# pulse width high
Address hold from ADV# high
Page address access
7
-
7
-
1,4
1
-
30
-
tphvh
RST# high to ADV# high
30
1
Clock Specifications
R200
R201
R202
R203
fCLK
tCLK
CLK frequency
CLK period
-
21.3
4.5
-
47
-
MHz
ns
1,3
tCH/CL
CLK high/low time
CLK fall/rise time
-
ns
tFCLK/RCLK
3
ns
Synchronous Specifications
R301
R302
R303
R304
R305
R306
R307
R311
R312
tAVCH/L
tVLCH/L
Address setup to CLK
ADV# low setup to CLK
CE# low setup to CLK
CLK to output valid
7
7
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
tELCH/L
-
tCHQV / t
17
-
CLQV
tCHQX
tCHAX
tCHTV
tCHVL
tCHTX
Output hold from CLK
Address hold from CLK
CLK to WAIT valid
3
7
-
1,5
1,4,5
1,5
1
-
17
-
CLK Valid to ADV# Setup
WAIT Hold from CLK
0
3
-
1,5
NOTES:
1.
See Figure 8, “AC Input/Output Reference Waveform” on page 28 for timing measurements and max allowable input slew
rate.
2.
3.
4.
5.
6.
OE# may be delayed by up to t
Sampled, not 100% tested.
Address hold in synchronous burst mode is t
Applies only to subsequent synchronous reads.
The specifications in this table will only be used by customers (1) who desire a 1.35 to 2.0 V
– t
after CE#’s falling edge without impact to t
.
ELQV
GLQV
ELQV
or t
, whichever timing specification is satisfied first.
CHAX
VHAX
operating range OR (2)
CCQ
who desire to transition their host controller from a 1.7 V to 2.0 V V
voltage now to a lower range in the future.
CCQ
April 2005
30
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
7.4
AC Read Specifications for 64-Mbit and 128-Mbit Densities
(V
= 1.7 V – 2.0 V)
CCQ
–85
Num
Symbol
Parameter
Speed
Units
Notes
Min
Max
Asynchronous Specifications
R1
R2
R3
tAVAV
tAVQV
tELQV
Read cycle time
85
-
-
ns
ns
ns
Address to output valid
CE# low to output valid
85
85
6
-
R4
R5
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
OE# low to output valid
-
-
20
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2
1
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
R6
0
0
-
1,3
1,2,3
R7
-
R8
17
17
-
R9
-
1,3
R10
R11
R12
R13
R15
R16
R17
Output hold from first occurring address, CE#, or OE# change
CE# pulse width high
0
14
-
tEHEL
tELTV
tEHTZ
tGLTV
-
1
1
CE# low to WAIT valid
14
14
14
-
CE# high to WAIT high Z
-
1,3
1
OE# low to WAIT valid
-
t
OE# low to WAIT in low-Z
0
-
1,3
1,3
GLTX
t
OE# high to WAIT in high-Z
17
GHTZ
Latching Specifications
R101
R102
R103
R104
R105
R106
R108
R111
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address setup to ADV# high
CE# low to ADV# high
ADV# low to output valid
ADV# pulse width low
7
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
1
1,6
1
85
-
7
ADV# pulse width high
Address hold from ADV# high
Page address access
7
-
7
-
1,4
1
-
25
-
tphvh
RST# high to ADV# high
30
1
Clock Specifications
R200
R201
R202
R203
fCLK
tCLK
CLK frequency
CLK period
-
18.5
3.5
-
54
-
MHz
ns
1,3
tCH/CL
CLK high/low time
CLK fall/rise time
-
ns
tFCLK/RCLK
3
ns
Synchronous Specifications
R301
R302
R303
R304
R305
R306
R307
R311
R312
tAVCH/L
tVLCH/L
tELCH/L
Address setup to CLK
ADV# low setup to CLK
CE# low setup to CLK
CLK to output valid
7
7
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
-
tCHQV / t
14
-
CLQV
tCHQX
tCHAX
tCHTV
tCHVL
tCHTX
Output hold from CLK
Address hold from CLK
CLK to WAIT valid
3
7
-
1,5
1,4,5
1,5
1
-
14
-
CLK Valid to ADV# Setup
WAIT Hold from CLK
0
3
-
1,5
NOTES:
1.
See Figure 8, “AC Input/Output Reference Waveform” on page 28 for timing measurements and maximum allowable
input slew rate.
2.
3.
4.
5.
6.
OE# may be delayed by up to t
Sampled, not 100% tested.
Address hold in synchronous burst mode is t
Applies only to subsequent synchronous reads.
The specifications in Section 7.3 will only be used by customers (1) who desire a 1.35 to 2.0 V
– t
after CE#’s falling edge without impact to t
.
ELQV
GLQV
ELQV
or t
, whichever timing specification is satisfied first.
VHAX
CHAX
operating range OR
CCQ
(2) who desire to transition their host controller from a 1.7 V to 2.0 V V
voltage now to a lower range in the future.
CCQ
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
31
Intel StrataFlash® Wireless Memory (L18)
7.5
AC Read Specifications for 256-Mbit Density (V
2.0 V)
= 1.7 V –
CCQ
–85
Num
Symbol
Parameter
Speed
Units
Notes
Min
Max
Asynchronous Specifications
V
V
V
V
V
V
= V
= V
= V
= V
= V
= V
= 1.8 V – 2.0 V
85
88
-
-
CC
CC
CC
CC
CC
CC
CCQ
CCQ
CCQ
CCQ
CCQ
CCQ
R1
R2
R3
tAVAV
tAVQV
tELQV
Read cycle time
ns
ns
ns
= 1.7 V – 2.0 V
= 1.8 V – 2.0 V
= 1.7 V – 2.0 V
= 1.8 V – 2.0 V
= 1.7 V – 2.0 V
-
85
88
85
88
Address to output valid
CE# low to output valid
6
-
-
-
R4
R5
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
OE# low to output valid
-
-
20
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2
1
RST# high to output valid
CE# low to output in low-Z
OE# low to output in low-Z
CE# high to output in high-Z
OE# high to output in high-Z
R6
0
0
-
1,3
1,2,3
R7
-
R8
17
17
-
R9
-
1,3
R10
R11
R12
R13
R15
R16
R17
Output hold from first occurring address, CE#, or OE# change
CE# pulse width high
0
14
-
tEHEL
tELTV
tEHTZ
tGLTV
-
1
1
CE# low to WAIT valid
14
14
14
-
CE# high to WAIT high Z
-
1,3
1
OE# low to WAIT valid
-
t
OE# low to WAIT in low-Z
0
-
1,3
1,3
GLTX
t
OE# high to WAIT in high-Z
17
GHTZ
Latching Specifications
R101
R102
tAVVH
tELVH
Address setup to ADV# high
CE# low to ADV# high
7
10
-
-
-
ns
ns
1
1,6
1
V
V
= V
= V
= 1.8 V – 2.0
= 1.7 V – 2.0
85
CC
CCQ
CCQ
R103
tVLQV
ADV# low to output valid
ns
-
7
88
-
CC
R104
R105
R106
R108
R111
tVLVH
tVHVL
tVHAX
tAPA
ADV# pulse width low
ns
ns
ns
ns
ns
ADV# pulse width high
Address hold from ADV# high
Page address access
7
-
7
-
1,4
1
-
25
-
tphvh
RST# high to ADV# high
30
1
Clock Specifications
R200
R201
R202
R203
fCLK
tCLK
CLK frequency
CLK period
-
18.5
3.5
-
54
-
MHz
ns
1,3
tCH/CL
CLK high/low time
CLK fall/rise time
-
ns
tFCLK/RCLK
3
ns
Synchronous Specifications
R301
R302
R303
R304
R305
R306
R307
tAVCH/L
tVLCH/L
tELCH/L
Address setup to CLK
ADV# low setup to CLK
CE# low setup to CLK
CLK to output valid
7
7
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
1
-
tCHQV / t
14
-
CLQV
tCHQX
tCHAX
tCHTV
Output hold from CLK
Address hold from CLK
CLK to WAIT valid
3
7
-
1,5
1,4,5
1,5
-
14
April 2005
32
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
–85
Num
Symbol
Parameter
Speed
Units
Notes
Min
Max
R311
R312
tCHVL
tCHTX
CLK Valid to ADV# Setup
WAIT Hold from CLK
0
-
ns
ns
1
3
-
1,5
NOTES:
1.
See Figure 8, “AC Input/Output Reference Waveform” on page 28 for timing measurements and max allowable input slew
rate.
2.
3.
4.
5.
6.
OE# may be delayed by up to t
Sampled, not 100% tested.
Address hold in synchronous burst mode is t
Applies only to subsequent synchronous reads.
The specifications in Section 7.3 will only be used by customers (1) who desire a 1.35 to 2.0 V
– t
after CE#’s falling edge without impact to t
.
ELQV
GLQV
ELQV
or t
, whichever timing specification is satisfied first.
VHAX
CHAX
operating range OR
CCQ
(2) who desire to transition their host controller from a 1.7 V to 2.0 V V
voltage now to a lower range in the future.
CCQ
Figure 11.
Asynchronous Single-Word Read with ADV# Low
R1
R2
R3
Address [A]
ADV#
R8
CE# [E}
OE# [G]
WAIT [T]
R4
R9
R15
R17
R7
R6
Data [D/Q]
RST# [P]
R5
Note: WAIT shown deasserted during asynchronous read mode (RCR[10]=0 Wait asserted low).
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
33
Intel StrataFlash® Wireless Memory (L18)
Figure 12.
Asynchronous Single-Word Read with ADV# Latch
R1
R2
Address [A]
A[1:0][A]
R101
R105
R106
ADV#
CE# [E}
OE# [G]
WAIT [T]
R3
R8
R4
R9
R15
R17
R7
R6
R10
Data [D/Q]
Note: WAIT shown deasserted during asynchronous read mode (RCR[10]=0 Wait asserted low).
Figure 13.
Asynchronous Page-Mode Read Timing
R1
R2
A[Max:2] [A]
A[1:0]
R101
R105
R106
ADV#
CE# [E]
R3
R8
R4
R10
OE# [G]
R15
R17
WAIT [T]
DATA [D/Q]
R7
R108
R9
Note: WAIT shown deasserted during asynchronous read mode (RCR[10]=0 Wait asserted low).
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 14.
Synchronous Single-Word Array or Non-array Read Timing
R301
R306
CLK [C]
R2
Address [A]
ADV# [V]
R101
R104
R106
R105
R303
R102
R3
R8
R9
CE# [E]
OE# [G]
WAIT [T]
R7
R15
R307
R304
R312 R17
R4
R305
Data [D/Q]
Notes:
1.
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to
assert either during or one data cycle before valid data.
2.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is
terminated by CE# deassertion after the first word in the burst.
Figure 15.
Continuous Burst Read, showing an Output Delay Timing
R301
R302
R306
R304
R304
R304
CLK [C]
R2
R101
Address [A]
ADV# [V]
R106
R105
R303
R102
R3
CE# [E]
OE# [G]
R15
R307
R304
R312
WAIT [T]
R4
R7
R305
R305
R305
R305
Data [D/Q]
Notes:
1.
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during
initial latency and deasserted during valid data (RCR[10] = 0 Wait asserted low).
At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the
starting address is not 4-word boundary aligned.
2.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
35
Intel StrataFlash® Wireless Memory (L18)
Figure 16.
Synchronous Burst-Mode Four-Word Read Timing
Latency Count
R302
R301
R306
CLK [C]
Address [A]
ADV# [V]
R2
R101
A
R105
R102
R106
R303
R3
R8
CE# [E]
OE# [G]
WAIT [T]
R9
R15
R307
R17
R4
R304
R305
Q0
R7
R304
R10
Data [D/Q]
Q1
Q2
Q3
Note: WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during
initial latency and deasserted during valid data (RCR[10] = 0 Wait asserted low).
Figure 17.
Burst Suspend Timing
R304
R305
R305
CLK
R1
R2
Address [A]
R101
R105
R106
ADV#
CE# [E]
OE# [G]
R3
R4
R9
R4
R15
R312
R17
R15
WAIT [T]
WE# [W]
R7
R6
R304
Q1
R304
Q2
DATA [D/Q]
Q0
Q1
Notes:
1.
2.
CLK can be stopped in either high or low state.
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during
initial latency and deasserted during valid data (RCR[10] = 0 Wait asserted low).
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
7.6
AC Write Specifications
Nbr.
Symbol
Parameter (1, 2)
Min
Max
Units
Notes
W1
W2
tPHWL RST# high recovery to WE# low
tELWL CE# setup to WE# low
150
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3
1,2,3
1,2,4
W3
tWLWH WE# write pulse width low
tDVWH Data setup to WE# high
tAVWH Address setup to WE# high
tWHEH CE# hold from WE# high
tWHDX Data hold from WE# high
tWHAX Address hold from WE# high
tWHWL WE# pulse width high
50
50
50
0
W4
W5
W6
1,2
W7
0
W8
0
W9
20
200
0
1,2,5
W10
W11
W12
W13
W14
W16
tVPWH
tQVVL
V
V
setup to WE# high
PP
PP
1,2,3,7
hold from Status read
tQVBL WP# hold from Status read
tBHWH WP# setup to WE# high
tWHGL WE# high to OE# low
tWHQV WE# high to read valid
0
1,2,3,7
1,2,9
200
0
t
+ 35
ns 1,2,3,6,10
AVQV
Write to Asynchronous Read Specifications
W18 tWHAV WE# high to Address valid
0
-
ns
1,2,3,6
Write to Synchronous Read Specifications
W19 tWHCH/L WE# high to Clock valid
19
19
-
-
ns
ns
1,2,3,6,10
W20
tWHVH WE# high to ADV# high
Write Specifications with Clock Active
W21
W22
tVHWL ADV# high to WE# low
tCHWL Clock high to WE# low
-
-
20
20
ns
ns
1,2,3,11
Notes:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (t
or t
) is defined from CE# or WE# low (whichever occurs last) to CE#
WLWH
ELEH
or WE# high (whichever occurs first). Hence, t
= t
= t
= t
.
WLWH
ELEH
WLEH
ELWH
5.
Write pulse width high (t
or t
) is defined from CE# or WE# high (whichever occurs first) to
WHWL
EHEL
CE# or WE# low (whichever occurs last). Hence, t
= t
= t
= t
).
EHWL
WHWL
EHEL
WHEL
6.
7.
8.
tWHVH or tWHCH/L must be met when transitioning from a write cycle to a synchronous burst read.
and WP# should be at a valid level until erase or program success is determined.
This specification is only applicable when transitioning from a write cycle to an asynchronous read.
See spec W19 and W20 for synchronous read.
V
PP
9.
When doing a Read Status operation following any command that alters the Status Register, W14 is
20 ns.
10.
11.
Add 10ns if the write operations results in a RCR or block lock status change, for the subsequent read
operation to reflect this change.
These specs are required only when the device is in a synchronous mode and clock is active during
address setup phase.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
37
Intel StrataFlash® Wireless Memory (L18)
Figure 18.
Write to Write Timing
W5
W8
W5
W8
Address [A]
CE# [E}
W2
W6
W2
W6
W3
W9
W3
WE# [W]
OE# [G]
WAIT [T]
W4
W7
W4
W7
Data [D/Q]
RST# [P]
W1
Figure 19.
Asynchronous Read to Write Timing
R1
R2
W5
W8
Address [A]
CE# [E}
R3
R8
R4
R9
OE# [G]
WE# [W]
WAIT [T]
W2
W3
W6
R15
R17
R10
R7
R6
W7
W4
Data [D/Q]
RST# [P]
Q
D
R5
Note: Wait deasserted during asynchronous read and during write. WAIT High-Z during write per OE#
deasserted.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 20.
Write to Asynchronous Read Timing
W5
W8
R1
Address [A]
ADV# [V]
W2
W6
R10
CE# [E}
WE# [W]
OE# [G]
WAIT [T]
W3
W18
W14
R15
R17
R4
R2
R3
R8
W4
W7
R9
Data [D/Q]
RST# [P]
D
Q
W1
Figure 21.
Synchronous Read to Write Timing
Latency Count
R301
R302
R306
CLK [C]
Address [A]
ADV# [V]
R2
W5
R101
W18
R105
R102
R106
R104
R303
R11
R13
R3
W6
CE# [E]
OE# [G]
R4
R8
W21
W22
W21
W22
W2
W8
W15
W3
W9
WE#
R16
R307
R304
R312
WAIT [T]
R7
R305
W7
Q
D
D
Data [D/Q]
Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0 Wait
asserted low). Clock is ignored during write operation.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
39
Intel StrataFlash® Wireless Memory (L18)
Figure 22.
Write to Synchronous Read Timing
Latency Count
R302
R301
R2
CLK
W5
W8
R306
R106
Address [A]
R104
R303
ADV#
W6
W2
R11
CE# [E}
W18
W19
W20
W3
WE# [W]
OE# [G]
WAIT [T]
R4
R15
R3
R307
W7
R304
R305
R304
W4
D
Q
Q
Data [D/Q]
RST# [P]
W1
Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0 Wait
asserted low).
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
7.7
Program and Erase Characteristics
V
V
PPH
PPL
Nbr.
Symbol
Parameter
Units Notes
Min Typ Max Min Typ Max
Conventional Word Programming
Single word
-
-
90
30
180
60
-
-
85
30
170
60
Program
Time
W200
t
µs
µs
1
1
PROG/W
Single cell
Buffered Programming
W200
W201
t
t
Single word
-
-
90
180
-
-
85
170
Program
Time
PROG/W
One Buffer (32 words)
440 880
340 680
PROG/PB
Buffered Enhanced Factory Programming
W451
t
t
Single word
n/a
n/a
n/a
n/a
n/a
n/a
-
10
-
-
-
1,2
1
BEFP/W
Program
µs
BEFP/
W452
Buffered EFP Setup
5
Setup
Erasing and Suspending
W500
W501
W600
W601
t
t
t
t
16-Kword Parameter
64-Kword Main
-
-
-
-
0.4
1.2
20
2.5
4
-
-
-
-
0.4
1.0
20
2.5
4
ERS/PB
ERS/MB
SUSP/P
SUSP/E
Erase Time
s
1
Program suspend
Erase suspend
25
25
25
25
Suspend
Latency
µs
20
20
Notes:
1.
Typical values measured at T = +25 °C and nominal voltages. Performance numbers are valid for all
C
speed versions. Excludes system overhead. Sampled, but not 100% tested.
Averaged over entire device.
2.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
41
Intel StrataFlash® Wireless Memory (L18)
8.0
Power and Reset Specifications
8.1
Power Up and Down
Power supply sequencing is not required if VCC, VCCQ, and VPP are connected together; If
VCCQ and/or VPP are not connected to the VCC supply, then VCC should attain VCCMIN before
applying VCCQ and VPP. Device inputs should not be driven before supply voltage equals VCCMIN
.
Power supply transitions should only occur when RST# is low. This protects the device from
accidental programming or erasure during power transitions.
8.2
Reset
Asserting RST# during a system reset is important with automated program/erase devices because
systems typically expect to read from flash memory when coming out of reset. If a CPU reset
occurs without a flash memory reset, proper CPU initialization may not occur. This is because the
flash memory may be providing status information, instead of array data as expected. Connect
RST# to the same active-low reset signal used for CPU initialization.
Also, because the device is disabled when RST# is asserted, it ignores its control inputs during
power-up/down. Invalid bus conditions are masked, providing a level of memory protection.
System designers should guard against spurious writes when VCC voltages are above VLKO
.
Because both WE# and CE# must be asserted for a write operation, deasserting either signal
inhibits writes to the device.
The Command User Interface (CUI) architecture provides additional protection because alteration
of memory contents can only occur after successful completion of a two-step command sequence
(see Section 9.2, “Device Commands” on page 47).
Nbr. Symbol
Parameter
RST# pulse width low
Min
Max
Unit
Notes
P1
P2
P3
t
t
t
100
-
ns
1,2,3,4
1,3,4,7
1,3,4,7
1,4,5,6
PLPH
RST# low to device reset during erase
RST# low to device reset during program
-
-
25
25
-
PLRH
VCCPH
µs
V
Power valid to RST# deassertion (high)
60
CC
Notes:
1.
2.
3.
4.
5.
6.
These specifications are valid for all device versions (packages and speeds).
The device may reset if t is < t min, but this is not guaranteed.
Not applicable if RST# is tied to Vcc.
Sampled, but not 100% tested.
PLPH
PLPH
If RST# is tied to the V supply, device will not be ready until t
after V ≥ V min.
CC
VCCPH
CC
CC
If RST# is tied to any supply/signal with V
voltage levels, the RST# input voltage must not exceed
CCQ
V
until V ≥ V (min).
CC
CC CC
7.
Reset completes within t
if RST# is asserted while no erase or program operation is executing.
PLPH
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 23.
Reset Operation Waveforms
P1
P2
P2
P3
R5
VIH
VIL
(
A) Reset during
read mode
RST# [P]
RST# [P]
RST# [P]
VCC
Abort
Complete
R5
(B) Reset during
VIH
VIL
program or block erase
P1
≤ P2
Abort
Complete
R5
(C) Reset during
VIH
VIL
program or block erase
P1
≥ P2
VCC
0V
(D) VCC Power-up to
RST# high
8.3
Power Supply Decoupling
Flash memory devices require careful power supply decoupling. Three basic power supply current
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks
produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the device enable
charge-pumps, and internal logic states change at high speed. All of these internal activities
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive
and inductive loading. Two-line control and correct decoupling capacitor selection suppress
transient voltage peaks.
Because Intel® Multi-Level Cell (MLC) flash memory devices draw their power from VCC, VPP,
and VCCQ, each power connection should have a 0.1 µF ceramic capacitor connected to a
corresponding ground connection. High-frequency, inherently low-inductance capacitors should be
placed as close as possible to package leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor should be
placed between power and ground close to the devices. The bulk capacitor is meant to overcome
voltage droop caused by PCB trace inductance.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
43
Intel StrataFlash® Wireless Memory (L18)
8.4
Automatic Power Saving
Automatic Power Saving (APS) provides low power operation during a read’s active state. ICCAPS
is the average current measured over any 5 ms time interval, 5 µs after CE# is deasserted. During
APS, average current is measured over the same time interval 5 µs after the following events
happen: (1) there is no internal read, program or erase operations cease; (2) CE# is asserted; (3) the
address lines are quiescent and at VSSQ or VCCQ. OE# may also be driven during APS.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
9.0
Device Operations
This section provides an overview of device operations. The system CPU provides control of all in-
system read, write, and erase operations of the device via the system bus. The on-chip Write State
Machine (WSM) manages all block-erase and word-program algorithms.
Device commands are written to the Command User Interface (CUI) to control all flash memory
device operations. The CUI does not occupy an addressable memory location; it is the mechanism
through which the flash device is controlled.
9.1
Bus Operations
CE#-low and RST#-high enable device read operations. The device internally decodes upper
address inputs to determine the accessed partition. ADV#-low opens the internal address latches.
OE#-low activates the outputs and gates selected data onto the I/O bus.
In asynchronous mode, the address is latched when ADV# goes high or continuously flows through
if ADV# is held low. In synchronous mode, the address is latched by the first of either the rising
ADV# edge or the next valid CLK edge with ADV# low (WE# and RST# must be VIH; CE# must
be VIL).
Bus cycles to/from the L18 device conform to standard microprocessor bus operations. Table 7
summarizes the bus operations and the logic levels that must be applied to the device’s control
signal inputs.
Table 7.
Bus Operations Summary
Bus Operation
RST#
CLK
ADV#
CE#
OE#
WE#
WAIT
DQ[15:0] Notes
Asynchronous
Synchronous
Burst Suspend
V
V
V
V
V
V
X
L
L
L
L
L
L
L
H
X
L
L
H
H
H
L
Deasserted
Driven
Output
Output
Output
IH
IH
IH
IH
IH
IH
Read
Write
Running
Halted
X
L
H
H
H
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
X
X
X
X
Input
1
2
Output Disable
Standby
X
X
X
H
X
X
High-Z
High-Z
High-Z
2
Reset
V
2,3
IL
Notes:
1.
2.
3.
Refer to the Table 8, “Command Bus Cycles” on page 47 for valid DQ[15:0] during a write operation.
X = Don’t Care (H or L).
RST# must be at V ± 0.2 V to meet the maximum specified power-down current.
SS
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
9.1.1
Reads
To perform a read operation, RST# and WE# must be deasserted while CE# and OE# are asserted.
CE# is the device-select control. When asserted, it enables the flash memory device. OE# is the
data-output control. When asserted, the addressed flash memory data is driven onto the I/O bus.
See Section 10.0, “Read Operations” on page 50 for details on the available read modes, and see
Section 15.0, “Special Read States” on page 75 for details regarding the available read states.
The Automatic Power Savings (APS) feature provides low power operation following reads during
active mode. After data is read from the memory array and the address lines are quiescent, APS
automatically places the device into standby. In APS, device current is reduced to ICCAPS (see
Section 6.1, “DC Current Characteristics” on page 26).
9.1.2
Writes
To perform a write operation, both CE# and WE# are asserted while RST# and OE# are deasserted.
During a write operation, address and data are latched on the rising edge of WE# or CE#,
whichever occurs first. Table 8, “Command Bus Cycles” on page 47 shows the bus cycle sequence
for each of the supported device commands, while Table 9, “Command Codes and Definitions” on
page 48 describes each command. See Section 7.0, “AC Characteristics” on page 28 for signal-
timing details.
Note:
Write operations with invalid VCC and/or VPP voltages can produce spurious results and should not
be attempted.
9.1.3
Output Disable
When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-impedance
(High-Z) state, WAIT is also placed in High-Z.
9.1.4
Standby
When CE# is deasserted the device is deselected and placed in standby, substantially reducing
power consumption. In standby, the data outputs are placed in High-Z, independent of the level
placed on OE#. Standby current, ICCS, is the average current measured over any 5 ms time interval,
5 µs after CE# is deasserted. During standby, average current is measured over the same time
interval 5 µs after CE# is deasserted.
When the device is deselected (while CE# is deasserted) during a program or erase operation, it
continues to consume active power until the program or erase operation is completed.
9.1.5
Reset
As with any automated device, it is important to assert RST# when the system is reset. When the
system comes out of reset, the system processor attempts to read from the flash memory if it is the
system boot device. If a CPU reset occurs with no flash memory reset, improper CPU initialization
may occur because the flash memory may be providing status information rather than array data.
Flash memory devices from Intel allow proper CPU initialization following a system reset through
the use of the RST# input. RST# should be controlled by the same low-true reset signal that resets
the system CPU.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
After initial power-up or reset, the device defaults to asynchronous Read Array, and the Status
Register is set to 0x80. Asserting RST# de-energizes all internal circuits, and places the output
drivers in High-Z. When RST# is asserted, the device shuts down the operation in progress, a
process which takes a minimum amount of time to complete. When RST# has been deasserted, the
device is reset to asynchronous Read Array state.
Note:
If RST# is asserted during a program or erase operation, the operation is terminated and the
memory contents at the aborted location (for a program) or block (for an erase) are no longer valid,
because the data may have been only partially written or erased.
When returning from a reset (RST# deasserted), a minimum wait is required before the initial read
access outputs valid data. Also, a minimum delay is required after a reset before a write cycle can
be initiated. After this wake-up interval passes, normal operation is restored. See Section 7.0, “AC
Characteristics” on page 28 for details about signal-timing.
9.2
Device Commands
Device operations are initiated by writing specific device commands to the Command User
Interface (CUI). See Table 8, “Command Bus Cycles” on page 47.
Several commands are used to modify array data including Word Program and Block Erase
commands. Writing either command to the CUI initiates a sequence of internally-timed functions
that culminate in the completion of the requested task. However, the operation can be aborted by
either asserting RST# or by issuing an appropriate suspend command.
Table 8.
Command Bus Cycles (Sheet 1 of 2)
First Bus Cycle
Second Bus Cycle
Addr1 Data2
Bus
Cycles
Mode
Command
Oper Addr1 Data2 Oper
Read Array
1
≥ 2
≥ 2
2
Write
Write
Write
Write
Write
PnA
PnA
PnA
PnA
X
0xFF
0x90
0x98
0x70
0x50
Read Device Identifier
CFI Query
Read PBA+IA ID
Read PnA+QA QD
Read
Read Status Register
Clear Status Register
Read PnA
SRD
1
0x40/
0x10
Word Program
2
Write
Write
Write
WA
WA
WA
Write WA
Write WA
Write WA
WD
Program
Buffered Program3
> 2
> 2
0xE8
0x80
N - 1
0xD0
Buffered Enhanced Factory Program
(Buffered EFP)4
Erase
Block Erase
2
Write
BA
0x20
Write BA
0xD0
Program/Erase Suspend
Program/Erase Resume
Lock Block
1
1
2
2
2
Write
Write
Write
Write
Write
X
0xB0
0xD0
0x60
0x60
0x60
Suspend
X
BA
BA
BA
Write BA
Write BA
Write BA
0x01
0xD0
0x2F
Block
Locking/
Unlocking
Unlock Block
Lock-down Block
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Table 8.
Command Bus Cycles (Sheet 2 of 2)
First Bus Cycle
Second Bus Cycle
Addr1 Data2
Bus
Cycles
Mode
Command
Oper Addr1 Data2 Oper
Program Protection Register
Program Lock Register
2
2
Write
Write
PRA
LRA
0xC0
0xC0
Write PRA
PD
Protection
Write LRA
Write RCD
LRD
0x03
Configuration Program Read Configuration Register
2
Write
RCD
0x60
Notes:
1.
First command cycle address should be the same as the operation’s target address.
PnA = Address within the partition.
PBA = Partition base address.
IA = Identification code address offset.
QA = CFI Query address offset.
BA = Address within the block.
WA = Word address of memory location to be written.
PRA = Protection Register address.
LRA = Lock Register address.
X = Any valid address within the device.
ID = Identifier data.
2.
QD = Query data on DQ[15:0].
SRD = Status Register data.
WD = Word data.
N = Word count of data to be loaded into the write buffer.
PD = Protection Register data.
PD = Protection Register data.
LRD = Lock Register data.
RCD = Read Configuration Register data on A[15:0]. A[MAX:16] can select any partition.
3.
4.
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming
operation.
The confirm command (0xD0) is followed by the buffer data.
9.3
Command Definitions
Valid device command codes and descriptions are shown in Table 9.
Table 9.
Command Codes and Definitions (Sheet 1 of 2)
Mode
Code Device Mode
Description
0xFF Read Array
Places the addressed partition in Read Array mode. Array data is output on DQ[15:0].
Places the addressed partition in Read Status Register mode. The partition enters this
mode after a program or erase command is issued. Status Register data is output on
DQ[7:0].
Read Status
0x70
Register
Read Device
ID or
Configuration
Register
Places the addressed partition in Read Device Identifier mode. Subsequent reads from
addresses within the partition outputs manufacturer/device codes, Configuration Register
data, Block Lock status, or Protection Register data on DQ[15:0].
Read
0x90
Places the addressed partition in Read Query mode. Subsequent reads from the partition
addresses output Common Flash Interface information on DQ[7:0].
0x98 Read Query
Clear Status The WSM can only set Status Register error bits. The Clear Status Register command is
0x50
Register
used to clear the SR error bits.
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Intel StrataFlash® Wireless Memory (L18)
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Intel StrataFlash® Wireless Memory (L18)
Table 9.
Command Codes and Definitions (Sheet 2 of 2)
Mode
Code Device Mode
Description
First cycle of a 2-cycle programming command; prepares the CUI for a write operation.
On the next write cycle, the address and data are latched and the WSM executes the
programming algorithm at the addressed location. During program operations, the
Word Program partition responds only to Read Status Register and Program Suspend commands. CE#
0x40
Setup
or OE# must be toggled to update the Status Register in asynchronous read. CE# or
ADV# must be toggled to update the Status Register Data for synchronous Non-array
read. The Read Array command must be issued to read array data after programming has
finished.
AlternateWord
0x10 Program
Setup
Equivalent to the Word Program Setup command, 0x40.
Buffered
Program
This command loads a variable number of bytes up to the buffer size of 32 words onto the
program buffer.
Write
0xE8
Buffered
0xD0 Program
Confirm
The confirm command is Issued after the data streaming for writing into the buffer is done.
This instructs the WSM to perform the Buffered Program algorithm, writing the data from
the buffer to the flash memory array.
Buffered
Enhanced
0x80 Factory
First cycle of a 2-cycle command; initiates Buffered Enhanced Factory Program mode
(Buffered EFP). The CUI then waits for the Buffered EFP Confirm command, 0xD0, that
initiates the Buffered EFP algorithm. All other commands are ignored when Buffered EFP
mode begins.
Programming
Setup
Buffered EFP If the previous command was Buffered EFP Setup (0x80), the CUI latches the address
0xD0
0x20
Confirm
and data, and prepares the device for Buffered EFP mode.
First cycle of a 2-cycle command; prepares the CUI for a block-erase operation. The
WSM performs the erase algorithm on the block addressed by the Erase Confirm
command. If the next command is not the Erase Confirm (0xD0) command, the CUI sets
Status Register bits SR[4] and SR[5], and places the addressed partition in read status
register mode.
Block Erase
Setup
Erase
If the first command was Block Erase Setup (0x20), the CUI latches the address and data,
and the WSM erases the addressed block. During block-erase operations, the partition
responds only to Read Status Register and Erase Suspend commands. CE# or OE# must
be toggled to update the Status Register in asynchronous read. CE# or ADV# must be
toggled to update the Status Register Data for synchronous Non-array read.
Block Erase
Confirm
0xD0
This command issued to any device address initiates a suspend of the currently-
executing program or block erase operation. The Status Register indicates successful
suspend operation by setting either SR[2] (program suspended) or SR[6] (erase
suspended), along with SR[7] (ready). The Write State Machine remains in the suspend
mode regardless of control signal states (except for RST# asserted).
Program or
0xB0 Erase
Suspend
Suspend
Suspend
Resume
This command issued to any device address resumes the suspended program or block-
erase operation.
0xD0
0x60
First cycle of a 2-cycle command; prepares the CUI for block lock configuration changes.
If the next command is not Block Lock (0x01), Block Unlock (0xD0), or Block Lock-Down
(0x2F), the CUI sets Status Register bits SR[4] and SR[5], indicating a command
sequence error.
Lock Block
Setup
Block Locking/
Unlocking
0x01 Lock Block
If the previous command was Block Lock Setup (0x60), the addressed block is locked.
If the previous command was Block Lock Setup (0x60), the addressed block is unlocked.
If the addressed block is in a lock-down state, the operation has no effect.
0xD0 Unlock Block
Lock-Down
0x2F
If the previous command was Block Lock Setup (0x60), the addressed block is locked
down.
Block
Program
Protection
Register
Setup
First cycle of a 2-cycle command; prepares the device for a Protection Register or Lock
Register program operation. The second cycle latches the register address and data, and
starts the programming algorithm.
Protection
0xC0
Read
First cycle of a 2-cycle command; prepares the CUI for device read configuration. If the
Set Read Configuration Register command (0x03) is not the next command, the CUI sets
Status Register bits SR[4] and SR[5], indicating a command sequence error.
Configuration
0x60
Register
Setup
Configuration
Read
If the previous command was Read Configuration Register Setup (0x60), the CUI latches
0x03 Configuration the address and writes A[15:0] to the Read Configuration Register. Following a Configure
Register Read Configuration Register command, subsequent read operations access array data.
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Intel StrataFlash® Wireless Memory (L18)
10.0
Read Operations
The device supports two read modes: asynchronous page mode and synchronous burst mode.
Asynchronous page mode is the default read mode after device power-up or a reset. The Read
Configuration Register must be configured to enable synchronous burst reads of the flash memory
array (see Section 10.3, “Read Configuration Register (RCR)” on page 51).
Each partition of the device can be in any of four read states: Read Array, Read Identifier, Read
Status or Read Query. Upon power-up, or after a reset, all partitions of the device default to Read
Array. To change a partition’s read state, the appropriate read command must be written to the
device (see Section 9.2, “Device Commands” on page 47). See Section 15.0, “Special Read States”
on page 75 for details regarding Read Status, Read ID, and CFI Query modes.
The following sections describe read-mode operations in detail.
10.1
Asynchronous Page-Mode Read
Following a device power-up or reset, asynchronous page mode is the default read mode and all
partitions are set to Read Array. However, to perform array reads after any other device operation
(e.g. write operation), the Read Array command must be issued in order to read from the flash
memory array.
Note:
Asynchronous page-mode reads can only be performed when Read Configuration Register bit
RCR[15] is set (see Section 10.3, “Read Configuration Register (RCR)” on page 51).
To perform an asynchronous page-mode read, an address is driven onto A[MAX:0], and CE# and
ADV# are asserted. WE# and RST# must already have been deasserted. WAIT is deasserted during
asynchronous page mode. ADV# can be driven high to latch the address, or it must be held low
throughout the read cycle. CLK is not used for asynchronous page-mode reads, and is ignored. If
only asynchronous reads are to be performed, CLK should be tied to a valid VIH level, WAIT
signal can be floated and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after
an initial access time tAVQV delay. (see Section 7.0, “AC Characteristics” on page 28).
In asynchronous page mode, four data words are “sensed” simultaneously from the flash memory
array and loaded into an internal page buffer. The buffer word corresponding to the initial address
on A[MAX:0] is driven onto DQ[15:0] after the initial access delay. Address bits A[MAX:2] select
the 4-word page. Address bits A[1:0] determine which word of the 4-word page is output from the
data buffer at any given time.
10.2
Synchronous Burst-Mode Read
Section 10.3, “Read Configuration Register (RCR)” on page 51continuous-wordsTo perform a
synchronous burst- read, an initial address is driven onto A[MAX:0], and CE# and ADV# are
asserted. WE# and RST# must already have been deasserted. ADV# is asserted, and then
deasserted to latch the address. Alternately, ADV# can remain asserted throughout the burst access,
in which case the address is latched on the next valid CLK edge while ADV# is asserted.
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Intel StrataFlash® Wireless Memory (L18)
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Intel StrataFlash® Wireless Memory (L18)
During synchronous array and non-array read modes, the first word is output from the data buffer
on the next valid CLK edge after the initial access latency delay (see Section 10.3.2, “Latency
Count” on page 52). Subsequent data is output on valid CLK edges following a minimum delay.
However, for a synchronous non-array read, the same word of data will be output on successive
clock edges until the burst length requirements are satisfied.
Figure 14Figure 16
10.2.1
Burst Suspend
The Burst Suspend feature of the device can reduce or eliminate the initial access latency incurred
when system software needs to suspend a burst sequence that is in progress in order to retrieve data
from another device on the same system bus. The system processor can resume the burst sequence
later. Burst suspend provides maximum benefit in non-cache systems.
Burst accesses can be suspended during the initial access latency (before data is received) or after
the device has output data. When a burst access is suspended, internal array sensing continues and
any previously latched internal data is retained. A burst sequence can be suspended and resumed
without limit as long as device operation conditions are met.
Burst Suspend occurs when CE# is asserted, the current address has been latched (either ADV#
rising edge or valid CLK edge), CLK is halted, and OE# is deasserted. CLK can be halted when it
is at VIH or VIL. WAIT is in High-Z during OE# deassertion.
To resume the burst access, OE# is reasserted, and CLK is restarted. Subsequent CLK edges
resume the burst sequence.
Within the device, CE# and OE# gate WAIT. Therefore, during Burst Suspend WAIT is placed in
high-impedance state when OE# is deasserted and resumed active when OE# is re-asserted. See
Figure 17, “Burst Suspend Timing” on page 36.
10.3
Read Configuration Register (RCR)
The RCR is used to select the read mode (synchronous or asynchronous), and it defines the
synchronous burst characteristics of the device. To modify RCR settings, use the Configure Read
Configuration Register command (see Section 9.2, “Device Commands” on page 47).
RCR contents can be examined using the Read Device Identifier command, and then reading from
<partition base address> + 0x05 (see Section 15.2, “Read Device Identifier” on page 76).
The RCR is shown in Table 10. The following sections describe each RCR bit.
Table 10.
Read Configuration Register Description (Sheet 1 of 2)
Read Configuration Register (RCR)
Data WAIT
Hold Delay
Burst
Wrap
Read
Mode
WAIT
Burst
Seq
CLK
RES
Latency Count
LC[2:0]
RES RES
Burst Length
Polarity
Edge
RM
15
R
WP
10
DH
9
WD
8
BS
7
CE
6
R
5
R
4
BW
3
BL[2:0]
1
14
13
12
11
2
0
Bit
Name
Description
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Intel StrataFlash® Wireless Memory (L18)
Table 10.
Read Configuration Register Description (Sheet 2 of 2)
15
14
Read Mode (RM)
0 = Synchronous burst-mode read
1 = Asynchronous page-mode read (default)
Reserved (R)
Reserved bits should be cleared (0)
13:11 Latency Count (LC[2:0])
010 =Code 2
011 =Code 3
100 =Code 4
101 =Code 5
110 =Code 6
111 =Code 7 (default)
(Other bit settings are reserved)
10
9
Wait Polarity (WP)
Data Hold (DH)
0 =WAIT signal is active low
1 =WAIT signal is active high (default)
0 =Data held for a 1-clock data cycle
1 =Data held for a 2-clock data cycle (default)
8
Wait Delay (WD)
Burst Sequence (BS)
Clock Edge (CE)
0 =WAIT deasserted with valid data
1 =WAIT deasserted one data cycle before valid data (default)
7
0 =Reserved
1 =Linear (default)
6
0 = Falling edge
1 = Rising edge (default)
5:4
3
Reserved (R)
Reserved bits should be cleared (0)
Burst Wrap (BW)
0 =Wrap; Burst accesses wrap within burst length set by BL[2:0]
1 =No Wrap; Burst accesses do not wrap within burst length (default)
2:0
Burst Length (BL[2:0])
001 =4-word burst
010 =8-word burst
011 =16-word burst
111 =Continuous-word burst (default)
(Other bit settings are reserved)
Note: Latency Code 2, Data Hold for a 2-clock data cycle (DH = 1) Wait must be deasserted with valid data (WD =
0). WD = 1 is not supported.
10.3.1
10.3.2
Read Mode
The Read Mode (RM) bit selects synchronous burst-mode or asynchronous page-mode operation
for the device. When the RM bit is set, asynchronous page mode is selected (default). When RM is
cleared, synchronous burst mode is selected.
Latency Count
The Latency Count bits, LC[2:0], tell the device how many clock cycles must elapse from the
rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the first data
word is to be driven onto DQ[15:0]. The input clock frequency is used to determine this value.
Figure 24 shows the data output latency for the different settings of LC[2:0].
Synchronous burst with a Latency Count setting of Code 4 will result in zero WAIT state; however,
a Latency Count setting of Code 5 will cause 1 WAIT state (Code 6 will cause 2 WAIT states, and
Code 7 will cause 3 WAIT states) after every four words, regardless of whether a 16-word
boundary is crossed. If RCR[9] (Data Hold) bit is set (data hold of two clocks) this WAIT condition
will not occur because enough clocks elapse during each burst cycle to eliminate subsequent WAIT
states.
Refer to Table 11 and Table 12 for Latency Code Settings.
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Intel StrataFlash® Wireless Memory (L18)
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Intel StrataFlash® Wireless Memory (L18)
Figure 24.
First-Access Latency Count
CLK [C]
Valid
Address
Address [A]
ADV# [V]
Code 0 (Reserved)
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
DQ15-0 [D/Q]
Code 1
(Reserved
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Code 2
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Code 3
Code 4
Code 5
Code 6
Code 7
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Valid
Output
Table 11.
LC and Frequency Support (tAVQV/tCHQV = 85 ns / 14 ns)
V
= 1.7 V to 2.0 V
CCQ
Latency Count Settings
Frequency Support (MHz)
2
3
≤ 28
≤ 40
≤ 54
4, 5, 6 or 7
Table 12.
LC and Frequency Support (tAVQV/tCHQV = 90 ns / 17 ns)
V
= 1.35 V to 2.0 V
CCQ
Latency Count Settings
Frequency Support (MHz)
2
≤ 27
≤ 40
3, 4, 5, 6 or 7
See Figure 25, “Example Latency Count Setting” on page 54.
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Intel StrataFlash® Wireless Memory (L18)
Figure 25.
Example Latency Count Setting
tData
0
1
2
3
4
CLK
CE#
ADV#
Address
A[MAX:0]
Code 3
High-Z
Data
D[15:0]
R103
10.3.3
WAIT Polarity
The WAIT Polarity bit (WP), RCR[10] determines the asserted level (VOH or VOL) of WAIT.
When WP is set, WAIT is asserted-high (default). When WP is cleared, WAIT is asserted-low.
WAIT changes state on valid clock edges during active bus cycles (CE# asserted, OE# asserted,
RST# deasserted).
10.3.3.1
WAIT Signal Function
The WAIT signal indicates data valid when the device is operating in synchronous mode
(RCR[15]=0). The WAIT signal is only “deasserted” when data is valid on the bus.
When the device is operating in synchronous non-array read mode, such as read status, read ID, or
read query the WAIT signal is also “deasserted” when data is valid on the bus.
WAIT behavior during synchronous non-array reads at the end of word line works correctly only
on the first data access.
When the device is operating in asynchronous page mode, asynchronous single word read mode,
and all write operations, WAIT is set to a deasserted state as determined by RCR[10]. See Figure
12, “Asynchronous Single-Word Read with ADV# Latch” on page 34, and Figure 13,
“Asynchronous Page-Mode Read Timing” on page 34.
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Intel StrataFlash® Wireless Memory (L18)
Table 13.
WAIT Functionality Table
Condition
WAIT
Notes
CE# = ‘1’, OE# = ‘X’
High-Z
1
CE# = ‘X’, OE# = ‘1’
CE# =’0’, OE# = ‘0’
Active
Active
Active
1
Synchronous Array Reads
Synchronous Non-Array Reads
All Asynchronous Reads
1
1
Deasserted
High-Z
1
All Writes
1,2
Notes:
1.
Active: WAIT is asserted until data becomes valid, then
deasserts
2.
When OE# = V during writes, WAIT = High-Z
IH
10.3.4
Data Hold
For burst read operations, the Data Hold (DH) bit determines whether the data output remains valid
on DQ[15:0] for one or two-clock cycles. This period of time is called the “data cycle”. When DH
is set, output data is held for two clocks (default). When DH is cleared, output data is held for one
clock (see Figure 26). The processor’s data setup time and the flash memory’s clock-to-data output
delay should be considered when determining whether to hold output data for one or two clocks. A
method for determining the Data Hold configuration is shown below:
To set the device at one clock data hold for subsequent reads, the following condition must be
satisfied:
t
CHQV (ns) + tDATA (ns) ≤ One CLK Period (ns)
DATA = Data set up to Clock (defined by CPU)
For example, with a clock frequency of 40 MHz, the clock period is 25 ns. Assuming
t
tCHQV = 20 ns and tDATA = 4ns. Applying these values to the formula above:
20 ns + 4 ns ≤ 25 ns
The equation is satisfied and data will be available at every clock period with data hold setting at
one clock.
If tCHQV (ns) + tDATA (ns) > One CLK Period (ns), data hold setting of 2 clock periods must be
used.
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Intel StrataFlash® Wireless Memory (L18)
Figure 26.
Data Hold Timing
CLK [C]
1 CLK
Data Hold
Valid
Output
Valid
Output
Valid
Output
D[15:0] [Q]
D[15:0] [Q]
2 CLK
Data Hold
Valid
Output
Valid
Output
10.3.5
WAIT Delay
The WAIT Delay (WD) bit controls the WAIT assertion-delay behavior during synchronous burst
reads. WAIT can be asserted either during or one data cycle before invalid data is output on
DQ[15:0]. When WD is set, WAIT is asserted one data cycle before invalid data (default). When
WD is cleared, WAIT is asserted during invalid data.
10.3.6
Burst Sequence
The Burst Sequence (BS) bit selects linear-burst sequence (default). Only linear-burst sequence is
supported. Table 14 shows the synchronous burst sequence for all burst lengths, as well as the
effect of the Burst Wrap (BW) setting.
Table 14.
Burst Sequence Word Ordering (Sheet 1 of 2)
Burst Addressing Sequence (DEC)
Start
Burst Wrap
(RCR[3])
Addr.
4-Word Burst
(BL[2:0] = 0b001)
8-Word Burst
16-Word Burst
(BL[2:0] = 0b011)
Continuous Burst
(BL[2:0] = 0b111)
(DEC)
(BL[2:0] = 0b010)
0
1
2
3
4
5
6
7
0
0
0
0
0
0
0
0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4…14-15
0-1-2-3-4-5-6-…
1-2-3-4-5…15-0
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
2-3-4-5-6…15-0-1
3-4-5-6-7…15-0-1-2
4-5-6-7-8…15-0-1-2-3
5-6-7-8-9…15-0-1-2-3-4
6-7-8-9-10…15-0-1-2-3-4-5 6-7-8-9-10-11-12-…
7-8-9-10…15-0-1-2-3-4-5-6 7-8-9-10-11-12-13…
14
15
0
0
14-15-0-1-2…12-13
15-0-1-2-3…13-14
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
0
1
2
3
4
5
6
7
1
1
1
1
1
1
1
1
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
0-1-2-3-4-5-6-7
0-1-2-3-4…14-15
1-2-3-4-5…15-16
2-3-4-5-6…16-17
3-4-5-6-7…17-18
4-5-6-7-8…18-19
5-6-7-8-9…19-20
6-7-8-9-10…20-21
0-1-2-3-4-5-6-…
1-2-3-4-5-6-7-…
2-3-4-5-6-7-8-…
3-4-5-6-7-8-9-…
4-5-6-7-8-9-10…
5-6-7-8-9-10-11…
6-7-8-9-10-11-12-…
7-8-9-10-11-12-13…
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
3-4-5-6-7-8-9-10
4-5-6-7-8-9-10-11
5-6-7-8-9-10-11-12
6-7-8-9-10-11-12-13
7-8-9-10-11-12-13-14 7-8-9-10-11…21-22
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Table 14.
10.3.7
10.3.8
Burst Sequence Word Ordering (Sheet 2 of 2)
14
15
1
1
14-15-16-17-18…28-29
15-16-17-18-19…29-30
14-15-16-17-18-19-20-…
15-16-17-18-19-20-21-…
Clock Edge
The Clock Edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This clock
edge is used at the start of a burst cycle, to output synchronous data, and to assert/deassert WAIT.
Burst Wrap
The Burst Wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length accesses
wrap within the selected word-length boundaries or cross word-length boundaries. When BW is
set, burst wrapping does not occur (default). When BW is cleared, burst wrapping occurs.
When performing synchronous burst reads with BW set (no wrap), an output delay may occur
when the burst sequence crosses its first device-row (16-word) boundary. If the burst sequence’s
start address is 4-word aligned, then no delay occurs. If the start address is at the end of a 4-word
boundary, the worst case output delay is one clock cycle less than the first access Latency Count.
This delay can take place only once, and doesn’t occur if the burst sequence does not cross a
device-row boundary. WAIT informs the system of this delay when it occurs.
10.3.9
Burst Length
The Burst Length bit (BL[2:0]) selects the linear burst length for all synchronous burst reads of the
flash memory array. The burst lengths are 4-word, 8-word, 16-word, and continuous word.
Continuous-burst accesses are linear only, and do not wrap within any word length boundaries (see
Table 14, “Burst Sequence Word Ordering” on page 56). When a burst cycle begins, the device
outputs synchronous burst data until it reaches the end of the “burstable” address space.
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11.0
Programming Operations
The device supports three programming methods: Word Programming (40h/10h), Buffered
Programming (E8h, D0h), and Buffered Enhanced Factory Programming (Buffered EFP) (80h,
D0h). See Section 9.0, “Device Operations” on page 45 for details on the various programming
commands issued to the device.
Successful programming requires the addressed block to be unlocked. If the block is locked down,
WP# must be deasserted and the block must be unlocked before attempting to program the block.
Attempting to program a locked block causes a program error (SR[4] and SR[1] set) and
termination of the operation. See Section 13.0, “Security Modes” on page 66 for details on locking
and unlocking blocks.
The following sections describe device programming in detail.
11.1
Word Programming
Word programming operations are initiated by writing the Word Program Setup command to the
device (see Section 9.0, “Device Operations” on page 45). This is followed by a second write to the
device with the address and data to be programmed. The partition accessed during both write
cycles outputs Status Register data when read. The partition accessed during the second cycle (the
data cycle) of the program command sequence is the location where the data is written. See Figure
39, “Word Program Flowchart” on page 85.
Programming can occur in only one partition at a time; all other partitions must be in a read state or
in erase suspend. VPP must be above VPPLK, and within the specified VPPL min/max values
(nominally 1.8 V).
During programming, the Write State Machine (WSM) executes a sequence of internally-timed
events that program the desired data bits at the addressed location, and verifies that the bits are
sufficiently programmed. Programming the flash memory array changes “ones” to “zeros.”
Memory array bits that are zeros can be changed to ones only by erasing the block (see Section
12.0, “Erase Operations” on page 64).
The Status Register can be examined for programming progress and errors by reading any address
within the partition that is being programmed. The partition remains in the Read Status Register
state until another command is written to that partition. Issuing the Read Status Register command
to another partition address sets that partition to the Read Status Register state, allowing
programming progress to be monitored at that partition’s address.
Status Register bit SR[7] indicates the programming status while the sequence executes.
Commands that can be issued to the programming partition during programming are Program
Suspend, Read Status Register, Read Device Identifier, CFI Query, and Read Array (this returns
unknown data).
When programming has finished, Status Register bit SR[4] (when set) indicates a programming
failure. If SR[3] is set, the WSM could not perform the word programming operation because VPP
was outside of its acceptable limits. If SR[1] is set, the word programming operation attempted to
program a locked block, causing the operation to abort.
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Before issuing a new command, the Status Register contents should be examined and then cleared
using the Clear Status Register command. Any valid command can follow, when word
programming has completed.
11.1.1
Factory Word Programming
Factory word programming is similar to word programming in that it uses the same commands and
programming algorithms. However, factory word programming enhances the programming
performance with VPP = VPPH. This can enable faster programming times during OEM
manufacturing processes. Factory word programming is not intended for extended use. See Section
5.2, “Operating Conditions” on page 25 for limitations when VPP = VPPH
.
Note:
When VPP = VPPL, the device draws programming current from the VCC supply. If VPP is driven
by a logic signal, VPPL must remain above VPPL MIN to program the device. When VPP = VPPH
the device draws programming current from the VPP supply. Figure 27, “Example VPP Supply
Connections” on page 63 shows examples of device power supply configurations.
,
11.2
Buffered Programming
The device features a 32-word buffer to enable optimum programming performance. For Buffered
Programming, data is first written to an on-chip write buffer. Then the buffer data is programmed
into the flash memory array in buffer-size increments. This can improve system programming
performance significantly over non-buffered programming.
When the Buffered Programming Setup command is issued (see Section 9.2, “Device Commands”
on page 47), Status Register information is updated and reflects the availability of the write buffer.
SR[7] indicates buffer availability: if set, the buffer is available; if cleared, the write buffer is not
available. To retry, issue the Buffered Programming Setup command again, and re-check SR[7].
When SR[7] is set, the buffer is ready for loading. (see Figure 41, “Buffer Program Flowchart” on
page 87).
On the next write, a word count is written to the device at the buffer address. This tells the device
how many data words will be written to the buffer, up to the maximum size of the buffer.
On the next write, a device start address is given along with the first data to be written to the flash
memory array. Subsequent writes provide additional device addresses and data. All data addresses
must lie within the start address plus the word count. Optimum programming performance and
lower power usage are obtained by aligning the starting address at the beginning of a 32-word
boundary (A[4:0] = 0x00). Crossing a 32-word boundary during programming will double the total
programming time.
After the last data is written to the buffer, the Buffered Programming Confirm command must be
issued to the original block address. The WSM begins to program buffer contents to the flash
memory array. If a command other than the Buffered Programming Confirm command is written to
the device, a command sequence error occurs and Status Register bits SR[7,5,4] are set. If an error
occurs while writing to the array, the device stops programming, and Status Register bits SR[7,4]
are set, indicating a programming failure.
Reading from another partition is allowed while data is being programmed into the array from the
write buffer (see Section 14.0, “Dual-Operation Considerations” on page 71).
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When Buffered Programming has completed, additional buffer writes can be initiated by issuing
another Buffered Programming Setup command and repeating the buffered program sequence.
Buffered programming may be performed with VPP = VPPL or VPPH (see Section 5.2, “Operating
Conditions” on page 25 for limitations when operating the device with VPP = VPPH).
If an attempt is made to program past an erase-block boundary using the Buffered Program
command, the device aborts the operation. This generates a command sequence error, and Status
Register bits SR[5,4] are set.
If Buffered programming is attempted while VPP is below VPPLK, Status Register bits SR[4,3] are
set. If any errors are detected that have set Status Register bits, the Status Register should be
cleared using the Clear Status Register command.
11.3
Buffered Enhanced Factory Programming
Buffered Enhanced Factory Programing (Buffered EFP) speeds up Multi-Level Cell (MLC) flash
programming for today's beat-rate-sensitive manufacturing environments. The enhanced
programming algorithm used in Buffered EFP eliminates traditional programming elements that
drive up overhead in device programmer systems.
Buffered EFP consists of three phases: Setup, Program/Verify, and Exit (see Figure 42, “Buffered
EFP Flowchart” on page 88). It uses a write buffer to spread MLC program performance across 32
data words. Verification occurs in the same phase as programming to accurately program the flash
memory cell to the correct bit state.
A single two-cycle command sequence programs the entire block of data. This enhancement
eliminates three write cycles per buffer: two commands and the word count for each set of 32 data
words. Host programmer bus cycles fill the device’s write buffer followed by a status check. SR[0]
indicates when data from the buffer has been programmed into sequential flash memory array
locations.
Following the buffer-to-flash array programming sequence, the Write State Machine (WSM)
increments internal addressing to automatically select the next 32-word array boundary. This
aspect of Buffered EFP saves host programming equipment the address-bus setup overhead.
With adequate continuity testing, programming equipment can rely on the WSM’s internal
verification to ensure that the device has programmed properly. This eliminates the external post-
program verification and its associated overhead.
11.3.1
Buffered EFP Requirements and Considerations
Buffered EFP requirements:
• Ambient temperature: TA = 25°C, ±5°C
• VCC within specified operating range.
• VPP driven to VPPH
.
• Target block unlocked before issuing the Buffered EFP Setup and Confirm commands.
• The first-word address (WA0) for the block to be programmed must be held constant from the
setup phase through all data streaming into the target block, until transition to the exit phase is
desired.
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• WA0 must align with the start of an array buffer boundary1.
Buffered EFP considerations:
• For optimum performance, cycling must be limited below 100 erase cycles per block2.
• Buffered EFP programs one block at a time; all buffer data must fall within a single block3.
• Buffered EFP cannot be suspended.
• Programming to the flash memory array can occur only when the buffer is full4.
• Read operation while performing Buffered EFP is not supported.
NOTES:
1.
2.
3.
4.
Word buffer boundaries in the array are determined by A[4:0] (0x00 through 0x1F). The alignment start
point is A[4:0] = 0x00.
Some degradation in performance may occur if this limit is exceeded, but the internal algorithm
continues to work properly.
If the internal address counter increments beyond the block's maximum address, addressing wraps
around to the beginning of the block.
If the number of words is less than 32, remaining locations must be filled with 0xFFFF.
11.3.2
Buffered EFP Setup Phase
After receiving the Buffered EFP Setup and Confirm command sequence, Status Register bit SR[7]
(Ready) is cleared, indicating that the WSM is busy with Buffered EFP algorithm startup. A delay
before checking SR[7] is required to allow the WSM enough time to perform all of its setups and
checks (Block-Lock status, VPP level, etc.). If an error is detected, SR[4] is set and Buffered EFP
operation terminates. If the block was found to be locked, SR[1] is also set. SR[3] is set if the error
occurred due to an incorrect VPP level.
Note:
Reading from the device after the Buffered EFP Setup and Confirm command sequence outputs
Status Register data. Do not issue the Read Status Register command; it will be interpreted as data
to be loaded into the buffer.
11.3.3
Buffered EFP Program/Verify Phase
After the Buffered EFP Setup Phase has completed, the host programming system must check
SR[7,0] to determine the availability of the write buffer for data streaming. SR[7] cleared indicates
the device is busy and the Buffered EFP program/verify phase is activated. SR[0] indicates the
write buffer is available.
Two basic sequences repeat in this phase: loading of the write buffer, followed by buffer data
programming to the array. For Buffered EFP, the count value for buffer loading is always the
maximum buffer size of 32 words. During the buffer-loading sequence, data is stored to sequential
buffer locations starting at address 0x00. Programming of the buffer contents to the flash memory
array starts as soon as the buffer is full. If the number of words is less than 32, the remaining buffer
locations must be filled with 0xFFFF.
Caution:
The buffer must be completely filled for programming to occur. Supplying an address outside of the
current block's range during a buffer-fill sequence causes the algorithm to exit immediately. Any
data previously loaded into the buffer during the fill cycle is not programmed into the array.
The starting address for data entry must be buffer size aligned, if not the Buffered EFP algorithm
will be aborted and the program fail (SR[4]) flag will be set.
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Data words from the write buffer are directed to sequential memory locations in the flash memory
array; programming continues from where the previous buffer sequence ended. The host
programming system must poll SR[0] to determine when the buffer program sequence completes.
SR[0] cleared indicates that all buffer data has been transferred to the flash array; SR[0] set
indicates that the buffer is not available yet for the next fill cycle. The host system may check full
status for errors at any time, but it is only necessary on a block basis after Buffered EFP exit. After
the buffer fill cycle, no write cycles should be issued to the device until SR[0] = 0 and the device is
ready for the next buffer fill.
Note:
Any spurious writes are ignored after a buffer fill operation and when internal program is
proceeding.
The host programming system continues the Buffered EFP algorithm by providing the next group
of data words to be written to the buffer. Alternatively, it can terminate this phase by changing the
block address to one outside of the current block’s range.
The Program/Verify phase concludes when the programmer writes to a different block address;
data supplied must be 0xFFFF. Upon Program/Verify phase completion, the device enters the
Buffered EFP Exit phase.
11.3.4
Buffered EFP Exit Phase
When SR[7] is set, the device has returned to normal operating conditions. A full status check
should be performed on the partition being programmed at this time to ensure the entire block
programmed successfully. When exiting the Buffered EFP algorithm with a block address change,
the read mode of both the programmed and the addressed partition will not change. After Buffered
EFP exit, any valid command can be issued to the device.
11.4
Program Suspend
Issuing the Program Suspend command while programming suspends the programming operation.
This allows data to be accessed from memory locations other than the one being programmed. The
Program Suspend command can be issued to any device address; the corresponding partition is not
affected. A program operation can be suspended to perform reads only. Additionally, a program
operation that is running during an erase suspend can be suspended to perform a read operation
(see Figure 40, “Program Suspend/Resume Flowchart” on page 86).
When a programming operation is executing, issuing the Program Suspend command requests the
WSM to suspend the programming algorithm at predetermined points. The partition that is
suspended continues to output Status Register data after the Program Suspend command is issued.
Programming is suspended when Status Register bits SR[7,2] are set. Suspend latency is specified
in Section 7.7, “Program and Erase Characteristics” on page 41.
To read data from blocks within the suspended partition, the Read Array command must be issued
to that partition. Read Array, Read Status Register, Read Device Identifier, CFI Query, and
Program Resume are valid commands during a program suspend.
A program operation does not need to be suspended in order to read data from a block in another
partition that is not programming. If the other partition is already in a Read Array, Read Device
Identifier, or CFI Query state, issuing a valid address returns corresponding read data. If the other
partition is not in a read mode, one of the read commands must be issued to the partition before
data can be read.
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During a program suspend, deasserting CE# places the device in standby, reducing active current.
V
PP must remain at its programming level, and WP# must remain unchanged while in program
suspend. If RST# is asserted, the device is reset.
11.5
Program Resume
The Resume command instructs the device to continue programming, and automatically clears
Status Register bits SR[7,2]. This command can be written to any partition. When read at the
partition that’s programming, the device outputs data corresponding to the partition’s last state. If
error bits are set, the Status Register should be cleared before issuing the next instruction. RST#
must remain deasserted (see Figure 40, “Program Suspend/Resume Flowchart” on page 86).
11.6
Program Protection
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If VPP is
below VPPLK, programming operations halt and SR[3] is set indicating a VPP-level error. Block
lock registers are not affected by the voltage level on VPP; they may still be programmed and read,
even if VPP is less than VPPLK
.
Figure 27.
Example VPP Supply Connections
VCC
VCC
VPP
VCC
VPP
VCC
VPP
PROT #
≤ 10K Ω
• Low-voltage Programming only
• Logic Control of Device Protection
• Factory Programming with VPP = VPPH
• Complete write/Erase Protection when VPP ≤ VPPLK
VCC
VCC
VCC
VCC
VPP
VPP=VPPH
VPP
• Low Voltage Programming Only
• Full Device Protection Unavailable
• Low Voltage and Factory Programming
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12.0
Erase Operations
Flash erasing is performed on a block basis. An entire block is erased each time an erase command
sequence is issued, and only one block is erased at a time. When a block is erased, all bits within
that block read as logical ones. The following sections describe block erase operations in detail.
12.1
Block Erase
Block erase operations are initiated by writing the Block Erase Setup command to the address of
the block to be erased (see Section 9.2, “Device Commands” on page 47). Next, the Block Erase
Confirm command is written to the address of the block to be erased. Erasing can occur in only one
partition at a time; all other partitions must be in a read state. If the device is placed in standby
(CE# deasserted) during an erase operation, the device completes the erase operation before
entering standby.VPP must be above VPPLK and the block must be unlocked (see Figure 43, “Block
Erase Flowchart” on page 89).
During a block erase, the Write State Machine (WSM) executes a sequence of internally-timed
events that conditions, erases, and verifies all bits within the block. Erasing the flash memory array
changes “zeros” to “ones.” Memory array bits that are ones can be changed to zeros only by
programming the block (see Section 11.0, “Programming Operations” on page 58).
The Status Register can be examined for block erase progress and errors by reading any address
within the partition that is being erased. The partition remains in the Read Status Register state
until another command is written to that partition. Issuing the Read Status Register command to
another partition address sets that partition to the Read Status Register state, allowing erase
progress to be monitored at that partition’s address. SR[0] indicates whether the addressed partition
or another partition is erasing. The partition’s Status Register bit SR[7] is set upon erase
completion.
Status Register bit SR[7] indicates block erase status while the sequence executes. When the erase
operation has finished, Status Register bit SR[5] indicates an erase failure if set. SR[3] set would
indicate that the WSM could not perform the erase operation because VPP was outside of its
acceptable limits. SR[1] set indicates that the erase operation attempted to erase a locked block,
causing the operation to abort.
Before issuing a new command, the Status Register contents should be examined and then cleared
using the Clear Status Register command. Any valid command can follow once the block erase
operation has completed.
12.2
Erase Suspend
Issuing the Erase Suspend command while erasing suspends the block erase operation. This allows
data to be accessed from memory locations other than the one being erased. The Erase Suspend
command can be issued to any device address; the corresponding partition is not affected. A block
erase operation can be suspended to perform a word or buffer program operation, or a read
operation within any block except the block that is erase suspended (see Figure 40, “Program
Suspend/Resume Flowchart” on page 86).
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When a block erase operation is executing, issuing the Erase Suspend command requests the WSM
to suspend the erase algorithm at predetermined points. The partition that is suspended continues to
output Status Register data after the Erase Suspend command is issued. Block erase is suspended
when Status Register bits SR[7,6] are set. Suspend latency is specified in Section 7.7, “Program
and Erase Characteristics” on page 41.
To read data from blocks within the suspended partition (other than an erase-suspended block), the
Read Array command must be issued to that partition first. During Erase Suspend, a Program
command can be issued to any block other than the erase-suspended block. Block erase cannot
resume until program operations initiated during erase suspend complete. Read Array, Read Status
Register, Read Device Identifier, CFI Query, and Erase Resume are valid commands during Erase
Suspend. Additionally, Clear Status Register, Program, Program Suspend, Block Lock, Block
Unlock, and Block Lock-Down are valid commands during Erase Suspend.
To read data from a block in a partition that is not erasing, the erase operation does not need to be
suspended. If the other partition is already in Read Array, Read Device Identifier, or CFI Query,
issuing a valid address returns corresponding data. If the other partition is not in a read state, one of
the read commands must be issued to the partition before data can be read.
During an erase suspend, deasserting CE# places the device in standby, reducing active current.
V
PP must remain at a valid level, and WP# must remain unchanged while in erase suspend. If
RST# is asserted, the device is reset.
12.3
12.4
Erase Resume
The Erase Resume command instructs the device to continue erasing, and automatically clears
status register bits SR[7,6]. This command can be written to any partition. When read at the
partition that’s erasing, the device outputs data corresponding to the partition’s last state. If status
register error bits are set, the Status Register should be cleared before issuing the next instruction.
RST# must remain deasserted (see Figure 40, “Program Suspend/Resume Flowchart” on page 86).
Erase Protection
When VPP = VIL, absolute hardware erase protection is provided for all device blocks. If VPP is
below VPPLK, erase operations halt and SR[3] is set indicating a VPP-level error.
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13.0
Security Modes
The device features security modes used to protect the information stored in the flash memory
array. The following sections describe each security mode in detail.
13.1
Block Locking
Individual instant block locking is used to protect user code and/or data within the flash memory
array. All blocks power up in a locked state to protect array data from being altered during power
transitions. Any block can be locked or unlocked with no latency. Locked blocks cannot be
programmed or erased; they can only be read.
Software-controlled security is implemented using the Block Lock and Block Unlock commands.
Hardware-controlled security can be implemented using the Block Lock-Down command along
with asserting WP#. Also, VPP data security can be used to inhibit program and erase operations
(see Section 11.6, “Program Protection” on page 63 and Section 12.4, “Erase Protection” on
page 65).
13.1.1
Lock Block
To lock a block, issue the Lock Block Setup command. The next command must be the Lock Block
command issued to the desired block’s address (see Section 9.2, “Device Commands” on page 47
and Figure 45, “Block Lock Operations Flowchart” on page 91). If the Set Read Configuration
Register command is issued after the Block Lock Setup command, the device configures the RCR
instead.
Block lock and unlock operations are not affected by the voltage level on VPP. The block lock bits
may be modified and/or read even if VPP is below VPPLK
.
13.1.2
13.1.3
Unlock Block
The Unlock Block command is used to unlock blocks (see Section 9.2, “Device Commands” on
page 47). Unlocked blocks can be read, programmed, and erased. Unlocked blocks return to a
locked state when the device is reset or powered down. If a block is in a lock-down state, WP#
must be deasserted before it can be unlocked (see Figure 28, “Block Locking State Diagram” on
page 67).
Lock-Down Block
A locked or unlocked block can be locked-down by writing the Lock-Down Block command
sequence (see Section 9.2, “Device Commands” on page 47). Blocks in a lock-down state cannot
be programmed or erased; they can only be read. However, unlike locked blocks, their locked state
cannot be changed by software commands alone. A locked-down block can only be unlocked by
issuing the Unlock Block command with WP# deasserted. To return an unlocked block to locked-
down state, a Lock-Down command must be issued prior to changing WP# to VIL. Locked-down
blocks revert to the locked state upon reset or power up the device (see Figure 28, “Block Locking
State Diagram” on page 67).
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13.1.4
Block Lock Status
The Read Device Identifier command is used to determine a block’s lock status (see Section 15.2,
“Read Device Identifier” on page 76). Data bits DQ[1:0] display the addressed block’s lock status;
DQ0 is the addressed block’s lock bit, while DQ1 is the addressed block’s lock-down bit.
Figure 28.
Block Locking State Diagram
Locked-
Down4,5
Hardware
Locked5
[011]
Locked
Power-Up/Reset
[X01]
[011]
WP# Hardware Control
Software
Locked
Unlocked
Unlocked
[X00]
[111]
[110]
Software Block Lock (0x60/0x01) or Software Block Unlock (0x60/0xD0)
Software Block Lock-Down (0x60/0x2F)
WP# hardware control
Notes:
1. [a,b,c] represents [WP#, DQ1, DQ0]. X = Don’t Care.
2. DQ1 indicates Block Lock-Down status. DQ1 = ‘0’, Lock-Down has not been issued
to this block. DQ1 = ‘1’, Lock-Down has been issued to this block.
3. DQ0 indicates block lock status. DQ0 = ‘0’, block is unlocked. DQ0 = ‘1’, block is
locked.
4. Locked-down = Hardware + Software locked.
5. [011] states should be tracked by system software to determine difference between
Hardware Locked and Locked-Down states.
13.1.5
Block Locking During Suspend
Block lock and unlock changes can be performed during an erase suspend. To change block
locking during an erase operation, first issue the Erase Suspend command. Monitor the Status
Register until SR[7] and SR[6] are set, indicating the device is suspended and ready to accept
another command.
Next, write the desired lock command sequence to a block, which changes the lock state of that
block. After completing block lock or unlock operations, resume the erase operation using the
Erase Resume command.
Note:
A Lock Block Setup command followed by any command other than Lock Block, Unlock Block,
or Lock-Down Block produces a command sequence error and set Status Register bits SR[4] and
SR[5]. If a command sequence error occurs during an erase suspend, SR[4] and SR[5] remains set,
even after the erase operation is resumed. Unless the Status Register is cleared using the Clear
Status Register command before resuming the erase operation, possible erase errors may be
masked by the command sequence error.
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If a block is locked or locked-down during an erase suspend of the same block, the lock status bits
change immediately. However, the erase operation completes when it is resumed. Block lock
operations cannot occur during a program suspend. See Appendix A, “Write State Machine
(WSM)” on page 78, which shows valid commands during an erase suspend.
13.2
Protection Registers
The device contains 17 Protection Registers (PRs) that can be used to implement system security
measures and/or device identification. Each Protection Register can be individually locked.
The first 128-bit Protection Register is comprised of two 64-bit (8-word) segments. The lower 64-
bit segment is pre-programmed at the factory with a unique 64-bit number. The other 64-bit
segment, as well as the other sixteen 128-bit Protection Registers, are blank. Users can program
these registers as needed. When programmed, users can then lock the Protection Register(s) to
prevent additional bit programming (see Figure 29, “Protection Register Map” on page 69).
The user-programmable Protection Registers contain one-time programmable (OTP) bits; when
programmed, register bits cannot be erased. Each Protection Register can be accessed multiple
times to program individual bits, as long as the register remains unlocked.
Each Protection Register has an associated Lock Register bit. When a Lock Register bit is
programmed, the associated Protection Register can only be read; it can no longer be programmed.
Additionally, because the Lock Register bits themselves are OTP, when programmed, Lock
Register bits cannot be erased. Therefore, when a Protection Register is locked, it cannot be
unlocked
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.
Figure 29.
Protection Register Map
0x109
128-bit Protection Register 16
(User-Programmable)
0x102
0x91
128-bit Protection Register 1
(User-Programmable)
0x8A
0x89
Lock Register 1
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0x88
64-bit Segment
(User-Programmable)
0x85
0x84
128-Bit Protection Register 0
64-bit Segment
(Factory-Programmed)
0x81
0x80
Lock Register 0
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
13.2.1
Reading the Protection Registers
The Protection Registers can be read from within any partition’s address space. To read the
Protection Register, first issue the Read Device Identifier command at any partitions’ address to
place that partition in the Read Device Identifier state (see Section 9.2, “Device Commands” on
page 47). Next, perform a read operation at that partition’s base address plus the address offset
corresponding to the register to be read. Table 17, “Device Identifier Information” on page 77
shows the address offsets of the Protection Registers and Lock Registers. Register data is read 16
bits at a time.
Note:
If a program or erase operation occurs within the device while it is reading a Protection Register,
certain restrictions may apply. See Table 15, “Simultaneous Operation Restrictions” on page 74 for
details.
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13.2.2
Programming the Protection Registers
To program any of the Protection Registers, first issue the Program Protection Register command
at the parameter partition’s base address plus the offset to the desired Protection Register (see
Section 9.2, “Device Commands” on page 47). Next, write the desired Protection Register data to
the same Protection Register address (see Figure 29, “Protection Register Map” on page 69).
The device programs the 64-bit and 128-bit user-programmable Protection Register data 16 bits at
a time (see Figure 46, “Protection Register Programming Flowchart” on page 92). Issuing the
Program Protection Register command outside of the Protection Register’s address space causes a
program error (SR[4] set). Attempting to program a locked Protection Register causes a program
error (SR[4] set) and a lock error (SR[1] set).
Note:
If a program or erase operation occurs when programming a Protection Register, certain
restrictions may apply. See Table 15, “Simultaneous Operation Restrictions” on page 74 for details.
13.2.3
Locking the Protection Registers
Each Protection Register can be locked by programming its respective lock bit in the Lock
Register. To lock a Protection Register, program the corresponding bit in the Lock Register by
issuing the Program Lock Register command, followed by the desired Lock Register data (see
Section 9.2, “Device Commands” on page 47). The physical addresses of the Lock Registers are
0x80 for register 0 and 0x89 for register 1. These addresses are used when programming the lock
registers (see Table 17, “Device Identifier Information” on page 77).
Bit 0 of Lock Register 0 is already programmed at the factory, locking the lower, pre-programmed
64-bit region of the first 128-bit Protection Register containing the unique identification number of
the device. Bit 1 of Lock Register 0 can be programmed by the user to lock the user-programmable,
64-bit region of the first 128-bit Protection Register. The other bits in Lock Register 0 are not used.
Lock Register 1 controls the locking of the upper sixteen 128-bit Protection Registers. Each of the
16 bits of Lock Register 1 correspond to each of the upper sixteen 128-bit Protection Registers.
Programming a bit in Lock Register 1 locks the corresponding 128-bit Protection Register.
Caution:
After being locked, the Protection Registers cannot be unlocked.
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14.0
Dual-Operation Considerations
The multi-partition architecture of the device allows background programming (or erasing) to
occur in one partition while data reads (or code execution) take place in another partition.
14.1
Memory Partitioning
The L18 flash memory array is divided into multiple 8-Mbit partitions, which allows simultaneous
read-while-write operations. Simultaneous program and erase is not allowed. Only one partition at
a time can be in program or erase mode.
The flash device supports read-while-write operations with bus cycle granularity and not command
granularity. In other words, it is not assumed that both bus cycles of a two cycle command (an erase
command for example) will always occur as back to back bus cycles to the flash device. In
practice, code fetches (reads) may be interspersed between write cycles to the flash device, and
they will likely be directed to a different partition than the one being written. This is especially true
when a processor is executing code from one partition that instructs the processor to program or
erase in another partition.
14.2
Read-While-Write Command Sequences
When issuing commands to the device, a read operation can occur between 2-cycle Write
command’s (Figure 30, and Figure 31). However, a write operation issued between a 2-cycle
commands write sequence causes a command sequence error. (See Figure 32)
When reading from the same partition after issuing a Setup command, Status Register data is
returned, regardless of the read mode of the partition prior to issuing the Setup command.
Figure 30.
Operating Mode with Correct Command Sequence Example
Address [A]
WE# [W]
Partition A
Partition A
Partition B
OE# [G]
Data [D/Q]
0x20
0xD0
0xFF
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Intel StrataFlash® Wireless Memory (L18)
Figure 31.
Operating Mode with Correct Command Sequence Example
Address [A]
WE# [W]
Partition A
Partition B
Partition A
OE# [G]
Data [D/Q]
0x20
Valid Array Data
0xD0
Figure 32.
Operating Mode with Illegal Command Sequence Example
Address [A]
WE# [W]
Partition A
Partition B
Partition A
Partition A
OE# [G]
Data [D/Q]
0x20
0xFF
0xD0
SR[7:0]
14.2.1
Simultaneous Operation Details
The Intel StrataFlash® Wireless Memory (L18) supports simultaneous read from one partition
while programming or erasing in any other partition. Certain features like the Protection Registers
and Query data have special requirements with respect to simultaneous operation capability. These
will be detailed in the following sections.
14.2.2
Synchronous and Asynchronous RWW Characteristics and
Waveforms
This section describes the transition of write operation to asynchronous read, write to synchronous
read, and write operation with clock active.
14.2.2.1
Write operation to asynchronous read transition
W18 - tWHAV
The AC parameter W18 (tWHAV-WE# High to Address Valid) is required when transitioning from a
write cycle (WE# going high) to perform an asynchronous read (only address valid is required).
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14.2.2.2
14.2.2.3
Write to synchronous read operation transition
W19 and W20 - tWHCV and tWHVH
The AC parameters W19 or W20 (tWHCV-WE# High to Clock Valid, and tWHVH - WE# High to
ADV# High) is required when transitioning from a write cycle (WE# going high) to perform a
synchronous burst read. A delay from WE# going high to a valid clock edge or ADV# going high
to latch a new address must be met.
Write Operation with Clock Active
W21 - tVHWL
W22 - tCHWL
The AC parameters W21 (tVHWL- ADV# High to WE# Low) and W22 (tCHWL -Clock high to
WE# low) are required during write operations when the device is in a synchronous mode and the
clock is active. A write bus cycle consists of two parts:
• the host provides an address to the flash device; and
• the host then provides data to the flash device.
The flash device in turn binds the received data with the received address. When operating
synchronously (RCR[15] = 0), the address of a write cycle may be provided to the flash by the first
active clock edge with ADV# low, or rising edge of ADV# as long as the applicable cycle
separation conditions are met between each cycle.
If neither a clock edge nor a rising ADV# edge is used to provide a new address at the beginning of
a write cycle (the clock is stopped and ADV# is low), the address may also be provided to the flash
device by holding the address bus stable for the required amount of time (W5, tAVWH) before the
rising WE# edge.
Alternatively, the host may choose not to provide an address to the flash device during subsequent
write cycles (if ADV# is high and only CE# or WE# is toggled to separate the prior cycle from the
current write cycle). In this case, the flash device will use the most recently provided address from
the host.
Refer to Figure 20, “Write to Asynchronous Read Timing” on page 39, Figure 21, “Synchronous
Read to Write Timing” on page 39, and Figure 22, “Write to Synchronous Read Timing” on
page 40, for representation of these timings.
14.2.3
Read Operation During Buffered Programming
The multi-partition architecture of the device allows background programming (or erasing) to
occur in one partition while data reads (or code execution) take place in another partition.
To perform a read while buffered programming operation, first issue a Buffered Program set up
command in a partition. When a read operation occurs in the same partition after issuing a setup
command, Status Register data will be returned, regardless of the read mode of the partition prior to
issuing the setup command.
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To read data from a block in other partition and the other partition already in read array mode, a
new block address must be issued. However, if the other partition is not already in read array mode,
issuing a read array command will cause the buffered program operation to abort and a command
sequence error would be posted in the Status Register. See Figure 41, “Buffer Program Flowchart”
on page 87 for more details.
Note:
Simultaneous read-while-Buffered EFP is not supported.
14.3
Simultaneous Operation Restrictions
Since the Intel StrataFlash® Wireless Memory (L18) supports simultaneous read from one
partition while programming or erasing in another partition, certain features like the Protection
Registers and CFI Query data have special requirements with respect to simultaneous operation
capability. (Table 15 provides details on restrictions during simultaneous operations.)
Table 15.
Simultaneous Operation Restrictions
Protection
Register or
CFI data
Parameter
Other
Partition
Notes
Partitions
Array Data
While programming or erasing in a main partition, the Protection Register or CFI
data may be read from any other partition.
Read
(See Notes)
Read
Write/Erase
Reading the parameter partition array data is not allowed if the Protection Register
or Query data is being read from addresses within the parameter partition.
While programming or erasing in a main partition, read operations are allowed in the
parameter partition.
(See Notes)
Write/Erase
Write/Erase
Accessing the Protection Registers or CFI data from parameter partition addresses
is not allowed when reading array data from the parameter partition.
While programming or erasing in a main partition, read operations are allowed in the
parameter partition.
Read
Write
Read
Accessing the Protection Registers or CFI data in a partition that is different from the
one being programed/erased, and also different from the parameter partition is
allowed.
While programming the Protection Register, reads are only allowed in the other
main partitions.
No Access
Allowed
Read
Read
Access to array data in the parameter partition is not allowed. Programming of the
Protection Register can only occur in the parameter partition, which means this
partition is in Read Status.
While programming or erasing the parameter partition, reads of the Protection
Registers or CFI data are not allowed in any partition.
No Access
Allowed
Write/Erase
Reads in partitions other than the parameter partition are supported.
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15.0
Special Read States
The following sections describe non-array read states. Non-array reads can be performed in
asynchronous read or synchronous burst mode. A non-array read operation occurs as asynchronous
single-word mode. When non-array reads are performed in asynchronous page mode only the first
data is valid and all subsequent data are undefined. When a non-array read operation occurs as
synchronous burst mode, the same word of data requested will be output on successive clock edges
until the burst length requirements are satisfied.
Each partition can be in one of its read states independent of other partitions’ modes. See Figure 11,
“Asynchronous Single-Word Read with ADV# Low” on page 33 and Figure 14, “Synchronous
Single-Word Array or Non-array Read Timing” on page 35 for details.
15.1
Read Status Register
The status of any partition is determined by reading the Status Register from the address of that
particular partition. To read the Status Register, issue the Read Status Register command within the
desired partition’s address range. Status Register information is available at the partition address to
which the Read Status Register, Word Program, or Block Erase command was issued. Status
Register data is automatically made available following a Word Program, Block Erase, or Block
Lock command sequence. Reads from a partition after any of these command sequences outputs
that partition’s status until another valid command is written to that partition (e.g. Read Array
command).
The Status Register is read using single asynchronous-mode or synchronous burst mode reads.
Status Register data is output on DQ[7:0], while 0x00 is output on DQ[15:8]. In asynchronous
mode the falling edge of OE#, or CE# (whichever occurs first) updates and latches the Status
Register contents. However, reading the Status Register in synchronous burst mode, CE# or ADV#
must be toggled to update status data. The Status Register read operations do not affect the read
state of the other partitions.
The Device Write Status bit (SR[7]) provides overall status of the device. The Partition Status bit
(SR[0]) indicates whether the addressed partition or some other partition is actively programming
or erasing. Status register bits SR[6:1] present status and error information about the program,
erase, suspend, VPP, and block-locked operations.
Table 16.
Status Register Description (Sheet 1 of 2)
Status Register (SR)
Default Value = 0x80
Erase
Device
Program
Suspend
Status
Block-
Partition
Locked
Status
Erase
Status
Program
Status
Suspend
VPP Status
Write Status
Status
Status
DWS
7
ESS
6
ES
5
PS
4
VPPS
3
PSS
2
BLS
1
PWS
0
Bit
Name
Description
Device Write Status
(DWS)
0 = Device is busy; program or erase cycle in progress; SR[0] valid.
1 = Device is ready; SR[6:1] are valid.
7
6
Erase Suspend Status
(ESS)
0 = Erase suspend not in effect.
1 = Erase suspend in effect.
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Table 16.
Status Register Description (Sheet 2 of 2)
Status Register (SR)
Default Value = 0x80
0 = Erase successful.
1 = Erase fail or program sequence error when set with SR[4,7].
5
4
3
2
1
Erase Status (ES)
Program Status (PS)
PP Status (VPPS)
0 = Program successful.
1 = Program fail or program sequence error when set with SR[5,7]
0 = VPP within acceptable limits during program or erase operation.
1 = VPP < VPPLK during program or erase operation.
V
Program Suspend Status 0 = Program suspend not in effect.
(PSS)
1 = Program suspend in effect.
Block-Locked Status
(BLS)
0 = Block not locked during program or erase.
1 = Block locked during program or erase; operation aborted.
DWS PWS
0
0
1
1
0
1
0
1
= Program or erase operation in addressed partition.
= Program or erase operation in other partition.
= No active program or erase operations.
= Reserved.
Partition Write Status
(PWS)
0
(Non-buffered EFP operation. For Buffered EFP operation, see
Section 11.3, “Buffered Enhanced Factory Programming” on
page 60).
Always clear the Status Register prior to resuming erase operations. This avoids Status Register
ambiguity when issuing commands during Erase Suspend. If a command sequence error occurs
during an erase-suspend state, the Status Register contains the command sequence error status
(SR[7,5,4] set). When the erase operation resumes and finishes, possible errors during the erase
operation cannot be detected via the Status Register because it contains the previous error status.
15.1.1
Clear Status Register
The Clear Status Register command clears the status register, leaving all partition read states
unchanged. It functions independent of VPP. The Write State Machine (WSM) sets and clears
SR[7,6,2,0], but it sets bits SR[5:3,1] without clearing them. The Status Register should be cleared
before starting a command sequence to avoid any ambiguity. A device reset also clears the Status
Register.
15.2
Read Device Identifier
The Read Device Identifier command instructs the addressed partition to output manufacturer
code, device identifier code, block-lock status, protection register data, or configuration register
data when that partition’s addresses are read (see Section 9.2, “Device Commands” on page 47 for
details on issuing the Read Device Identifier command). Table 17, “Device Identifier Information”
on page 77 and Table 18, “Device ID codes” on page 77 show the address offsets and data values
for this device.
Issuing a Read Device Identifier command to a partition that is programming or erasing places that
partition in the Read Identifier state while the partition continues to program or erase in the
background.
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Table 17.
Device Identifier Information
Item
Address(1,2)
Data
Manufacturer Code
PBA + 0x00
PBA + 0x01
0089h
Device ID Code
ID (see Table 18)
Block Lock Configuration:
• Block Is Unlocked
Lock Bit:
DQ0 = 0b0
DQ0 = 0b1
• Block Is Locked
BBA + 0x02
• Block Is not Locked-Down
• Block Is Locked-Down
Configuration Register
DQ1 = 0b0
DQ1 = 0b1
PBA + 0x05
PBA + 0x80
Configuration Register Data
PR-LK0
Lock Register 0
64-bit Factory-Programmed Protection Register
64-bit User-Programmable Protection Register
Lock Register 1
PBA + 0x81–0x84 Factory Protection Register Data
PBA + 0x85–0x88 User Protection Register Data
PBA + 0x89
Protection Register Data
16x128-bit User-Programmable Protection
Registers
PBA + 0x8A–0x109 PR-LK1
Notes:
1.
2.
PBA = Partition Base Address.
BBA = Block Base Address.
Table 18.
Device ID codes
Device Identifier Codes
–T –B
ID Code Type
Device Density
(Top Parameter) (Bottom Parameter)
64 Mbit
128 Mbit
256 Mbit
880B
880C
880D
880E
880F
8810
Device Code
15.3
CFI Query
The CFI Query command instructs the device to output Common Flash Interface (CFI) data when
partition addresses are read. See Section 9.2, “Device Commands” on page 47 for details on
issuing the CFI Query command. Appendix C, “Common Flash Interface” on page 93 shows CFI
information and address offsets within the CFI database.
Issuing the CFI Query command to a partition that is programming or erasing places that partition’s
outputs in the CFI Query state, while the partition continues to program or erase in the background.
The CFI Query command is subject to read restrictions dependent on parameter partition
availability, as described in Table 15.
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Appendix A Write State Machine (WSM)
Figure 33 through Figure 38 show the command state transitions (Next State Table) based on
incoming commands. Only one partition can be actively programming or erasing at a time. Each
partition stays in its last read state (Read Array, Read Device ID, CFI Query or Read Status
Register) until a new command changes it. The next WSM state does not depend on the partition’s
output state.
Figure 33.
Write State Machine—Next State Table (Sheet 1 of 6)
Command Input to Chip and resulting Chip Next State
BE Confirm,
P/E
Resume,
ULB,
Confirm (8)
Buffered
Enhanced
Factory Pgm
Setup (3, 4)
Clear
Status
Register (5)
Lock, Unlock,
Lock-down,
CR setup (4)
Buffered
Program
(BP)
BP / Prg /
Erase
Suspend
Read
Word
Program (3,4)
Erase
Setup (3,4)
Read
Status
Read
ID/Query
(2)
Current Chip
State (7)
Array
(FFH)
(10H/40H)
(E8H)
(20H)
(80H)
(D0H)
(B0H)
(70H)
(50H)
(90H, 98H)
(60H)
Program
Setup
Erase
Setup
Lock/CR
Setup
Ready
Ready
Ready
BP Setup
BEFP Setup
Ready
(Unlock
Block)
Lock/CR Setup
Ready (Lock Error)
Ready (Lock Error)
Setup
OTP
Busy
OTP Busy
Word Program Busy
Word
Setup
Program Busy
Word Program Busy
Busy
Program
Suspend
Word
Program
Word
Program
Busy
Word Program Suspend
Word Program Suspend
Suspend
BP Load 1
BP Load 2
Setup
BP Load 1
BP Confirm if Data load into Program Buffer is complete; Else BP Load 2
BP Load 2
BP
BP
Confirm
Ready (Error)
Ready (Error)
BP Busy
BP Busy
BP Busy
BP Suspend
Ready (Error)
Erase Busy
BP Busy
BP Suspend
BP
Suspend
BP Suspend
Ready (Error)
BP Busy
Setup
Erase Busy
Erase
Suspend
Erase Busy
Busy
Erase
Word
Program
Setup in
Erase
Lock/CR
Setup in
Erase
BP Setup in
Erase
Suspend
Erase
Suspend
Erase Suspend
Erase Suspend
Suspend
Erase Busy
Suspend
Suspend
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Figure 34.
Write State Machine—Next State Table (Sheet 2 of 6)
Command Input to Chip and resulting Chip Next State
BE Confirm,
P/E
Resume,
ULB,
Confirm (8)
Buffered
Enhanced
Factory Pgm
Setup (3, 4)
Clear
Status
Register (5)
Lock, Unlock,
Lock-down,
CR setup (4)
Buffered
Program
(BP)
BP / Prg /
Erase
Suspend
Read
Word
Program (3,4)
Erase
Setup (3,4)
Read
Status
Read
ID/Query
(2)
Current Chip
State (7)
Array
(FFH)
(10H/40H)
(E8H)
(20H)
(80H)
(D0H)
(B0H)
(70H)
(50H)
(90H, 98H)
(60H)
Word Program Busy in Erase Suspend
Setup
Word
Program
Word Program Busy in Erase Suspend
Word Program Suspend in Erase Suspend
Word Program Busy in Erase Suspend Busy
Word Program Suspend in Erase Suspend
Busy
Suspend in
Erase
Suspend
Word
Program in
Erase
Word
Program
Busy in
Erase
Suspend
Suspend
Suspend
BP Load 1
BP Load 2
Setup
BP Load 1
BP Confirm if Data load into Program Buffer is complete; Else BP Load 2
BP Load 2
BP Busy in
Erase
Suspend
BP in Erase
Suspend
BP
Confirm
Erase Suspend (Error)
Ready (Error in Erase Suspend)
BP Suspend
in Erase
BP Busy in Erase Suspend
BP Busy in Erase Suspend
BP Busy
Suspend
BP Busy in
Erase
Suspend
BP
Suspend
BP Suspend in Erase Suspend
BP Suspend in Erase Suspend
Erase
Suspend
(Unlock
Block)
Lock/CR Setup in Erase
Suspend
Erase Suspend (Lock Error)
Ready (Error)
Erase Suspend (Lock Error [Botch])
Ready (Error)
BEFP
Loading
Data (X=32)
Buffered
Enhanced
Factory
Setup
Program
Mode
BEFP
Busy
BEFP Program and Verify Busy (if Block Address given matches address given on BEFP Setup command). Commands treated as data. (7)
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Intel StrataFlash® Wireless Memory (L18)
Figure 35.
Write State Machine—Next State Table (Sheet 3 of 6)
Command Input to Chip and resulting Chip Next State
Lock
Block
Confirm (8) Confirm
Lock-Down
OTP
Setup (4)
Write RCR
Block Address
Illegal Cmds or
BEFP Data (1)
Block
WSM
Operation
Completes
(8)
9
Current Chip
State (7)
Confirm
(?WA0)
(8)
(C0H)
(01H)
(2FH)
(03H)
(XXXXH)
(all other codes)
OTP
Setup
Ready
Ready
Ready
(Lock
Error)
Ready
(Lock
Block)
Ready
(Lock Down
Blk)
Ready
(Set CR)
N/A
Ready (Lock Error)
Lock/CR Setup
Setup
OTP Busy
OTP
Busy
Ready
N/A
Word Program Busy
Word Program Busy
Setup
Ready
Busy
Word
Program
Word Program Suspend
BP Load 1
Suspend
Setup
BP Load 2
Ready (BP Load 2 BP Load 2
BP Load 1
BP Confirm if
Data load into
Program Buffer is
complete; ELSE
BP Load 2
N/A
BP Confirm if Data load into Program Buffer is
complete; ELSE BP load 2
Ready
BP Load 2
BP
Ready (Error)
(Proceed if
unlocked or lock
error)
BP
Confirm
Ready (Error)
Ready (Error)
BP Busy
BP Busy
BP Suspend
Ready (Error)
Erase Busy
Ready
N/A
BP
Suspend
Setup
Busy
Ready
Erase
Suspend
Erase Suspend
N/A
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Intel StrataFlash® Wireless Memory (L18)
Figure 36.
Write State Machine—Next State Table (Sheet 4 of 6)
Command Input to Chip and resulting Chip Next State
Lock
Block
Confirm (8) Confirm
Lock-Down
OTP
Setup (4)
Write RCR
Block Address
Illegal Cmds or
BEFP Data (1)
Block
WSM
Operation
Completes
(8)
9
Current Chip
State (7)
Confirm
(?WA0)
(8)
(C0H)
(01H)
(2FH)
(03H)
(XXXXH)
(all other codes)
Setup
Word Program Busy in Erase Suspend
NA
Word Program Busy in Erase Suspend Busy
Busy
Erase Suspend
Word
Program in
Erase
Suspend
Word Program Suspend in Erase Suspend
BP Load 1
Suspend
N/A
Setup
BP Load 2
BP Load 1
Ready (BP Load 2 BP Load 2
BP Confirm if
Data load into
Program Buffer is
complete; Else
BP Load 2
BP Confirm if Data load into Program Buffer is
complete; Else BP Load 2
N/A
Ready
BP Load 2
BP in Erase
Suspend
BP
Ready (Error)
(Proceed if
unlocked or lock
error)
Ready (Error in Erase Suspend)
Ready (Error)
Confirm
BP Busy in Erase Suspend
Erase Suspend
BP Busy
BP
Suspend
BP Suspend in Erase Suspend
Erase
Suspend Suspend
(Lock
Error)
Erase
Erase
Erase
Suspend
Lock/CR Setup in Erase
Suspend
Erase Suspend (Lock Error)
Suspend
(Set CR)
N/A
(Lock
Block)
(Lock Down
Block)
Ready (BEFP
Ready (Error)
Loading Data)
Ready (Error)
Buffered
Enhanced
Factory
Program
Mode
Setup
BEFP Program and Verify Busy (if Block Address
given matches address given on BEFP Setup
command). Commands treated as data. (7)
BEFP
Busy
Ready
Ready
BEFP Busy
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Figure 37.
Write State Machine—Next State Table (Sheet 5 of 6)
Output Next State Table
Command Input to Chip and resulting Output Mux Next State
BE Confirm,
P/E
Resume,
Buffered
Enhanced
Factory Pgm
Setup (3, 4)
Clear
Status
Register (5)
Lock, Unlock,
Lock-down,
Word
Program
Setup (3,4)
Program/
Erase
Suspend
Read
Erase
Read
Status
Read
ID/Query
BP Setup
(E8H)
(2)
Array
Setup (3,4)
Current chip state
CR setup (4)
ULB Confirm
(8)
(FFH)
(10H/40H)
(20H)
(30H)
(D0H)
(B0H)
(70H)
(50H)
(90H, 98H)
(60H)
BEFP Setup,
BEFP Pgm & Verify
Busy,
Erase Setup,
OTP Setup,
BP: Setup, Load 1,
Load 2, Confirm,
Word Pgm Setup,
Word Pgm Setup in
Erase Susp,
Status Read
BP Setup, Load1,
Load 2, Confirm in
Erase Suspend
Lock/CR Setup,
Lock/CR Setup in
Erase Susp
Status Read
Status
Read
OTP Busy
Ready,
Erase Suspend,
BP Suspend
BP Busy,
Word Program
Busy,
Erase Busy,
BP Busy
Output mux
does not
change.
Read Array
Status Read
Output does not change.
Status Read
Status Read
ID Read
BP Busy in Erase
Suspend
Word Pgm
Suspend,
Word Pgm Busy in
Erase Suspend,
Pgm Suspend In
Erase Suspend
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 38.
Write State Machine—Next State Table (Sheet 6 of 6)
Output Next State Table
Command Input to Chip and resulting Output Mux Next State
Lock
Block
Confirm (8) Confirm
Lock-Down
OTP
Setup (4)
Write CR
Illegal Cmds or
BEFP Data (1)
Block Address
(?WA0)
Block
WSM
(8)
Confirm
(8)
Operation
Completes
Current chip state
(C0H)
(01H)
(2FH)
(03H)
(FFFFH)
(all other codes)
BEFP Setup,
BEFP Pgm & Verify
Busy,
Erase Setup,
OTP Setup,
BP: Setup, Load 1,
Load 2, Confirm,
Word Pgm Setup,
Word Pgm Setup in
Erase Susp,
Status Read
BP Setup, Load1,
Load 2, Confirm in
Erase Suspend
Lock/CR Setup,
Lock/CR Setup in
Erase Susp
Array
Read
Status Read
Status Read
Output does
not change.
OTP Busy
Ready,
Erase Suspend,
BP Suspend
BP Busy,
Word Program
Busy,
Erase Busy,
BP Busy
Status
Read
Output does not
change.
Output does not change.
Array Read
BP Busy in Erase
Suspend
Word Pgm
Suspend,
Word Pgm Busy in
Erase Suspend,
Pgm Suspend In
Erase Suspend
Notes:
1.
2.
3.
4.
"Illegal commands" include commands outside of the allowed command set (allowed commands: 40H
[pgm], 20H [erase], etc.)
If a "Read Array" is attempted from a busy partition, the result will be invalid data. The ID and Query
data are located at different locations in the address map.
1st and 2nd cycles of "2 cycles write commands" must be given to the same partition address, or
unexpected results will occur.
To protect memory contents against erroneous command sequences, there are specific instances in a
multi-cycle command sequence in which the second cycle will be ignored. For example, when the
device is program suspended and an erase setup command (0x20) is given followed by a confirm/
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
83
Intel StrataFlash® Wireless Memory (L18)
resume command (0xD0), the second command will be ignored because it is unclear whether the user
intends to erase the block or resume the program operation.
5.
The Clear Status command only clears the error bits in the status register if the device is not in the
following modes: WSM running (Pgm Busy, Erase Busy, Pgm Busy In Erase Suspend, OTP Busy, BEFP
modes).
6.
7.
BEFP writes are only allowed when the status register bit #0 = 0, or else the data is ignored.
The "current state" is that of the "chip" and not of the "partition"; Each partition "remembers" which
output (Array, ID/CFI or Status) it was last pointed to on the last instruction to the "chip", but the next
state of the chip does not depend on where the partition's output mux is presently pointing to.
Confirm commands (Lock Block, Unlock Block, Lock-Down Block, Configuration Register) perform the
operation and then move to the Ready State.
8.
9.
WA0 refers to the block address latched during the first write cycle of the current operation.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Appendix B Flowcharts
Figure 39.
Word Program Flowchart
WORD PROGRAM PROCEDURE
Bus
Operation
Start
Command
Comments
Program Data = 0x40
Setup Addr = Location to program
Write
Write
Read
Write 0x40,
(Setup)
Word Address
Data = Data to program
Data
Addr = Location to program
Write Data,
(Confirm)
Word Address
None
None
Status register data
Program
Suspend
Loop
Read Status
Register
Check SR[7]
1 = WSM Ready
0 = WSM Busy
Idle
No
Suspend?
Yes
0
SR[7] =
1
Repeat for subsequent Word Program operations.
Full Status Register check can be done after each program, or
after a sequence of program operations.
Full Status
Check
(if desired)
Write 0xFF after the last operation to set to the Read Array
state.
Program
Complete
FULL STATUS CHECK PROCEDURE
Read Status
Register
Bus
Command
Operation
Comments
Check SR[3]:
1 = VPP Error
Idle
Idle
None
None
1
1
1
VPP Range
Error
SR[3] =
0
Check SR[4]:
1 = Data Program Error
Program
Error
Check SR[1]:
1 = Block locked; operation aborted
SR[4] =
0
Idle
None
If an error is detected, clear the Status Register before
continuing operations - only the Clear Staus Register
command clears the Status Register error bits.
Device
Protect Error
SR[1] =
0
Program
Successful
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
85
Intel StrataFlash® Wireless Memory (L18)
Figure 40.
Program Suspend/Resume Flowchart
PROGRAM SUSPEND / RESUME PROCEDURE
Start
Bus
Program Suspend
Write B0h
Command
Operation
Comments
Any Address
Program Data = B0h
Write
Suspend Addr = Block to suspend (BA)
Read Status
Write 70h
Same Partition
Read
Data = 70h
Write
Read
Status Addr = Same partition
Read Status
Register
Status register data
Addr = Suspended block (BA)
Check SR.7
Standby
Standby
1 = WSM ready
0 = WSM busy
0
0
SR.7 =
1
Check SR.2
1 = Program suspended
0 = Program completed
Program
Completed
SR.2 =
Data = FFh
Addr = Any address within the
suspended partition
1
Read
Array
Write
Read
Write
Read Array
Write FFh
Susp Partition
Read array data from block other than
the one being programmed
Read Array
Data
Program Data = D0h
Resume Addr = Suspended block (BA)
If the suspended partition was placed in Read Array mode:
Done
No
Reading
Return partition to Status mode:
Read
Write
Data = 70h
Yes
Status
Addr = Same partition
Program Resume
Read Array
Write FFh
Write D0h
Any Address
Pgm'd Partition
Program
Resumed
Read Array
Data
Read Status
Write 70h
Same Partition
PGM_SUS.WMF
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 41.
Buffer Program Flowchart
Buffer Programming Procedure
Start
Bus
Operation
Command
Comments
Device
Supports Buffer
Use Single Word
Programming
Buffer Prog. Data = 0xE8
Write
Read
No
Setup
None
Addr = Word Address
Writes?
SR[7] = Valid
Addr = Word Address
Yes
Set Timeout or
Loop Counter
Check SR[7]:
1 = Write Buffer available
0 = No Write Buffer available
Idle
None
None
Get Next
Target Address
Data = N-1 = Word Count
N = 0 corresponds to count = 1
Addr = Word Address
Write
(Notes 1, 2)
Issue Buffer Prog. Cmd.
0xE8,
Write
(Notes 3, 4)
Data = Write Buffer Data
Addr = Start Word Address
None
None
Word Address
Write
(Note 3)
Data = Write Buffer Data
Addr = Word Address
Read Status Register
at Word Address
Write
Buffer Prog. Data = 0xD0
(Notes 5, 6)
Conf.
Addr = Original Word Address
No
Status register Data
Addr = Note 7
Read
Idle
None
Timeout
or Count
Expired?
Write Buffer
0 = No
Available?
SR[7] =
Yes
Check SR[7]:
1 = WSM Ready
0 = WSM Busy
None
1 = Yes
Write Word Count,
Word Address
1. Word count value on D[7:0] is loaded into the word count
register. Count ranges for this device are N = 0x00 to 0x1F.
2. The device outputs the Status Register when read.
3. Write Buffer contents will be programmed at the issued word
address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance (i.e., A[4:0] of the Start
Word Address = 0x00).
5. The Buffered Programming Confirm command must be
issued to an address in the same block, for example, the
original Start Word Address, or the last address used during the
loop that loaded the buffer data.
Buffer Program Data,
Start Word Address
X = X + 1
Write Buffer Data,
Word Address
X = 0
No
No
Abort Buffer
Program?
6. The Status Register indicates an improper command
sequence if the Buffer Program command is aborted; use the
Clear Status Register command to clear error bits.
7. The Status Register can be read from any addresses within
the programming partition.
X = N?
Yes
Yes
Write to another
Block Address
Write Confirm 0xD0
and Word Address
(Note 5)
Full status check can be done after all erase and write
sequences complete. Write 0xFF after the last operation to
place the partition in the Read Array state.
Issue Read
Status Register
Command
Buffer Program Aborted
Read Status Register
(Note 7)
Suspend
Program
Loop
No
0=No
Yes
Suspend
Program?
Is BP finished?
SR[7] =
1=Yes
Full Status
Check if Desired
Program Complete
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Figure 42.
Buffered EFP Flowchart
BUFFERED ENHANCED FACTORY PROGRAMMING (Buffered-EFP) PROCEDURE
Setup Phase
Program & Verify Phase
Exit Phase
Start
Read Status Reg.
Read Status Reg.
VPP applied,
Block unlocked
No (SR[0]=1)
No (SR[7]=0)
BEFP
Exited?
Data Stream
Ready?
Yes (SR[7]=1)
Yes (SR[0]=0)
Write 0x80 @
1ST Word Address
Initialize Count:
X = 0
Full Status Check
Procedure
Write 0xD0 @
1STWord Address
Write Data @ 1ST
Word Address
Program
Complete
BEFP setup delay
Read Status Reg.
Increment Count:
X = X+1
N
X = 32?
Yes (SR[7]=0)
BEFP Setup
Done?
Y
Read Status Reg.
No (SR[7]=1)
No (SR[0]=1)
Check VPP, Lock
Errors (SR[3,1])
Program
Done?
Exit
Yes (SR[0]=0)
N
Last
Data?
Y
Write 0xFFFF,
Address Not within
Current Block
BEFP Setup
BEFP Program & Verify
BEFP Exit
Bus
State
Bus
State
Operation
Comments
Bus State Operation
Comments
Operation
Status
Comments
Data = Status Reg. Data
Unlock
Block
Status
Read
Data = Status Register Data
Address = 1ST Word Addr.
Write
VPPHapplied to VPP
Read
Register
Register Address = 1ST Word Addr
Write
(Note 1)
BEFP
Setup
Data = 0x80 @ 1ST Word
Address
Check SR[0]:
0 = Ready for Data
1 = Not Ready for Data
Check SR[7]:
Check Exit
Data Stream
Standby
Standby
0 = Exit Not Completed
Status
Ready?
1 = Exit Completed
ST Word
Data = 0xD0 @
BEFP
Confirm Address
Write
Read
1
Initialize
Standby
Repeat for subsequent blocks;
X = 0
Count
Status
Data = Status Reg. Data
After BEFP exit, a full Status Register check can
determine if any program error occurred;
Register Address = 1STWord Addr
Write
Load
Data = Data to Program
Address = 1ST Word Addr.
(Note 2)
Buffer
BEFP
Setup
Done?
Check SR[7]:
0 = BEFP Ready
1 = BEFP Not Ready
See full Status Register check procedure in the
Word Program flowchart.
Standby
Increment
Count
Standby
Standby
Read
X = X+1
Write 0xFF to enter Read Array state.
X = 32?
Yes = Read SR[0]
No = Load Next Data Word
Error
If SR[7] is set, check:
Buffer
Full?
Standby Condition SR[3] set = VPP Error
Check SR[1] set = Locked Block
Status
Register
Data = Status Reg. data
Address = 1ST Word Addr.
Check SR[0]:
0 = Program Done
1 = Program in Progress
Program
Done?
Standby
Last
Data?
No = Fill buffer again
Yes = Exit
Standby
Write
Exit Prog & Data = 0xFFFF @ address not in
Verify Phase current block
NOTES:
1. First-word address to be programmed within the target blockmust be aligned on a write-buffer boundary.
2. Write-buffer contents are programmed sequentially to the flash array starting at the first word addresWs;SM internally increments addressing.
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 43.
Block Erase Flowchart
BLOCK ERASE PROCEDURE
Bus
Operation
Start
Command
Comments
Block
Erase
Setup
Data = 0x20
Addr = Block to be erased (BA)
Write
Write 0x20,
(Block Erase)
Block Address
Erase Data = 0xD0
Confirm Addr = Block to be erased (BA)
Write
Read
Write 0xD0,
(Erase Confirm)
Block Address
None
None
Status Register data.
Suspend
Erase
Loop
Read Status
Register
Check SR[7]:
1 = WSM ready
0 = WSM busy
Idle
No
Suspend
Erase
0
Yes
SR[7] =
Repeat for subsequent block erasures.
1
Full Status register check can be done after each block erase
or after a sequence of block erasures.
Full Erase
Write 0xFF after the last operation to enter read array mode.
Status Check
(if desired)
Block Erase
Complete
FULL ERASE STATUS CHECK PROCEDURE
Read Status
Register
Bus
Command
Operation
Comments
Check SR[3]:
1 = VPP Range Error
Idle
Idle
Idle
None
None
None
1
VPP Range
Error
SR[3] =
0
Check SR[4,5]:
Both 1 = Command Sequence Error
1,1
1
Command
Sequence Error
Check SR[5]:
1 = Block Erase Error
SR[4,5] =
0
Check SR[1]:
1 = Attempted erase of locked block;
erase aborted.
Block Erase
Error
Idle
None
SR[5] =
0
Only the Clear Status Register command clears SR[1, 3, 4, 5].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
1
Block Locked
Error
SR[1] =
0
Block Erase
Successful
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Figure 44.
Erase Suspend/Resume Flowchart
ERASE SUSPEND / RESUME PROCEDURE
Start
Bus
Command
Comments
Operation
Write 0x70,
Same Partition
Read
Status
Data = 0x70
Addr = Any partition address
(Read Status)
Write
Write
Read
Data = 0xB0
Addr = Same partition address as
above
Erase
Suspend
Write 0xB0,
Any Address
(Erase Suspend)
Status Register data.
Addr = Same partition
None
None
Read Status
Register
Check SR[7]:
1 = WSM ready
0 = WSM busy
Idle
0
SR[7] =
1
Check SR[6]:
1 = Erase suspended
Idle
None
0 = Erase completed
0
Erase
Completed
SR[6] =
1
Data = 0xFF or 0x40
Addr = Any address within the
suspended partition
Read Array
or Program
Write
Read or
Write
Read array or program data from/to
block other than the one being erased
Read
Program
Read or
Program?
None
Read Array
Data
Program
Loop
Program Data = 0xD0
Resume Addr = Any address
No
Write
Done
If the suspended partition was placed in
Read Array mode or a Program Loop:
Read
Status
Return partition to Status mode:
Data = 0x70
Write 0xD0,
Any Address
Write
(Erase Resume)
Register Addr = Same partition
Erase
Resumed
Write 0xFF,
Erased Partition
(Read Array)
Write 0x70,
Same Partition
Read Array
Data
(Read Status)
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Figure 45.
Block Lock Operations Flowchart
LOCKING OPERATIONS PROCEDURE
Start
Bus
Command
Comments
Operation
Write 0x60,
Block Address
Lock
Setup
Data = 0x60
Addr = Block to lock/unlock/lock-down
(Lock Setup)
Write
Lock,
Unlock, or
Lock-Down
Data = 0x01 (Block Lock)
0xD0 (Block Unlock)
Write either
0x01/0xD0/0x2F,
Block Address
(Lock Confirm)
(Read Device ID)
Write
Write
0x2F (Lock-Down Block)
Confirm Addr = Block to lock/unlock/lock-down
Read Data = 0x90
(Optional) Device ID Addr = Block address + offset 2
Write 0x90
Read
(Optional)
Block Lock Block Lock status data
Status Addr = Block address + offset 2
Read Block
Lock Status
Idle
None
Confirm locking change on D[1,0].
Locking
No
Change?
Yes
Read
Array
Data = 0xFF
Addr = Block address
Write
Write 0xFF
Partition Address
(Read Array)
Lock Change
Complete
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Figure 46.
Protection Register Programming Flowchart
PROTECTION REGISTER PROGRAMMING PROCEDURE
Bus
Operation
Start
Command
Comments
Program Data = 0xC0
PR Setup Addr = First Location to Program
Write
Write 0xC0,
PR Address
(Program Setup)
(Confirm Data)
Protection Data = Data to Program
Program Addr = Location to Program
Write
Read
Write PR
Address & Data
None
None
Status Register Data.
Read Status
Register
Check SR[7]:
1 = WSM Ready
0 = WSM Busy
Idle
Program Protection Register operation addresses must be
within the Protection Register address space. Addresses
outside this space will return an error.
0
SR[7] =
1
Repeat for subsequent programming operations.
Full Status
Check
(if desired)
Full Status Register check can be done after each program, or
after a sequence of program operations.
Write 0xFF after the last operation to set Read Array state.
Program
Complete
FULL STATUS CHECK PROCEDURE
Read Status
Register Data
Bus
Operation
Command
Comments
Check SR[3]:
1 =VPP Range Error
Idle
Idle
Idle
None
1
1
1
SR[3] =
0
VPP Range Error
Check SR[4]:
1 =Programming Error
None
None
Check SR[1]:
1 =Block locked; operation aborted
SR[4] =
0
Program Error
Only the Clear Staus Register command clears SR[1, 3, 4].
If an error is detected, clear the Status register before
attempting a program retry or other error recovery.
Register Locked;
Program Aborted
SR[1] =
0
Program
Successful
April 2005
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Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Appendix C Common Flash Interface
The Common Flash Interface (CFI) is part of an overall specification for multiple command-set
and control-interface descriptions. This appendix describes the database structure containing the
data returned by a read operation after issuing the CFI Query command (see Section 9.2, “Device
Commands” on page 47). System software can parse this database structure to obtain information
about the flash device, such as block size, density, bus width, and electrical specifications. The
system software will then know which command set(s) to use to properly perform flash writes,
block erases, reads and otherwise control the flash device.
C.1
Query Structure Output
The Query database allows system software to obtain information for controlling the flash device.
This section describes the device’s CFI-compliant interface that allows access to Query data.
Query data are presented on the lowest-order data outputs (DQ7-0) only. The numerical offset value
is the address relative to the maximum bus width supported by the device. On this family of
devices, the Query table device starting address is a 10h, which is a word address for x16 devices.
For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,” appear on
the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00h data on upper
bytes. The device outputs ASCII “Q” in the low byte (DQ7-0) and 00h in the high byte (DQ15-8).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
Table 19.
Summary of Query Structure Output as a Function of Device and Mode
Hex
Offset
Hex
Code
ASCII
Value
Device
00010:
00011:
00012:
51
52
59
“Q”
“R”
“Y”
Device Addresses
Table 20.
Example of Query Structure Output of x16- Devices
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
93
Intel StrataFlash® Wireless Memory (L18)
Word Addressing:
Byte Addressing:
Offset
AX–A0
Hex Code
Value
Offset
AX–A0
Hex Code
D7–D0
51
52
59
P_IDLO
P_IDLO
P_IDHI
...
Value
D15–D0
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
...
0051
0052
0059
P_IDLO
P_IDHI
PLO
"Q"
"R"
"Y"
00010h
00011h
00012h
00013h
00014h
00015h
00016h
00017h
00018h
...
"Q"
"R"
"Y"
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
PrVendor
ID #
ID #
PHI
...
A_IDLO
A_IDHI
...
...
C.2
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or “database.” The structure sub-sections and address locations are summarized in
Table 21.
Table 21.
Query Structure
Description(1)
Reserved for vendor-specific information
Command set ID and vendor data offset
Device timing & voltage information
Flash device layout
Offset
00001-Fh Reserved
00010h
0001Bh
00027h
P(3)
Sub-Section Name
CFI query identification string
System interface information
Device geometry definition
Vendor-defined additional information specific
Primary Intel-specific Extended Query Table
Notes:
1.
Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as
a function of device bus width and mode.
2.
3.
BA = Block Address beginning location (i.e., 08000h is block 1’s beginning location when the block size
is 16-Kword).
Offset 15 defines “P” which points to the Primary Intel-specific Extended Query Table.
C.3
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table 22.
CFI Identification
April 2005
94
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Hex
Offset Length
Description
Add. Code Value
3
Query-unique ASCII string “QRY“
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
10h
--51
--52
--59
--01
--00
--0A
--01
--00
--00
--00
--00
"Q"
"R"
"Y"
2
2
2
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
13h
15h
17h
19h
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
Table 23.
System Interface Information
Hex
Offset
Length
Description
Add. Code Value
1Bh
1
VCC logic supply minimum program/erase voltage
1B:
1C:
1D:
1E:
--17
--20
--85
--95
1.7V
2.0V
8.5V
9.5V
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
1Ch
1Dh
1Eh
1
1
1
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
PP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2n µ-sec
“n” such that typical max. buffer write time-out = 2n µ-sec
“n” such that typical block erase time-out = 2n m-sec
“n” such that typical full chip erase time-out = 2n m-sec
“n” such that maximum word program time-out = 2n times typical
“n” such that maximum buffer write time-out = 2n times typical
“n” such that maximum block erase time-out = 2n times typical
“n” such that maximum chip erase time-out = 2n times typical
1Fh
20h
21h
22h
23h
24h
25h
26h
1
1
1
1
1
1
1
1
1F:
20:
21:
22:
23:
24:
25:
26:
--08 256µs
--09 512µs
--0A
--00
1s
NA
--01 512µs
--01 1024µs
--02
--00
4s
NA
C.4
Device Geometry Definition
Table 24.
Device Geometry Definition
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
95
Intel StrataFlash® Wireless Memory (L18)
Offset
27h
Length
Description
Code
See table below
“n” such that device size = 2n in number of bytes
Flash device interface code assignment:
1
27:
28:
"n" such that n+1 specifies the bit field that represents the flash
device width capabilities as described in the table:
7
6
5
4
3
2
1
x16
9
0
x8
8
28h
2
—
15
—
—
14
—
—
13
—
—
12
—
x64
11
x32
10
--01
x16
64
—
—
—
—
29:
2A:
2B:
2C:
--00
--06
--00
“n” such that maximum number of bytes in write buffer = 2n
2
1
2Ah
2Ch
Number of erase block regions (x) within device:
1. x = 0 means no erase blocking; the device erases in bulk
2. x specifies the number of device regions with one or
more contiguous same-size erase blocks.
See table below
3. Symmetrically blocked partitions have one blocking region
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
4
4
4
2Dh
31h
35h
2D:
2E:
2F:
30:
31:
32:
33:
34:
35:
36:
37:
38:
See table below
See table below
See table below
Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Reserved for future erase block region information
64 Mbit
128 Mbit
256 Mbit
Address
–B
–T
–B
–T
–B
–T
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
31:
32:
33:
34:
35:
36:
37:
38:
--17
--01
--00
--06
--00
--02
--03
--00
--80
--00
--3E
--00
--00
--02
--00
--00
--00
--00
--17
--01
--00
--06
--00
--02
--3E
--00
--00
--02
--03
--00
--80
--00
--00
--00
--00
--00
--18
--01
--00
--06
--00
--02
--03
--00
--80
--00
--7E
--00
--00
--02
--00
--00
--00
--00
--18
--01
--00
--06
--00
--02
--7E
--00
--00
--02
--03
--00
--80
--00
--00
--00
--00
--00
--19
--01
--00
--06
--00
--02
--03
--00
--80
--00
--FE
--00
--00
--02
--00
--00
--00
--00
--19
--01
--00
--06
--00
--02
--FE
--00
--00
--02
--03
--00
--80
--00
--00
--00
--00
--00
April 2005
96
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
C.5
Intel-Specific Extended Query Table
Table 25.
Primary Vendor-Specific Extended Query
Offset(1)
P = 10Ah
Hex
Length
Description
(Optional flash features and commands)
Primary extended query table
Add. Code Value
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
3
10A
--50
"P"
"R"
"I"
"1"
"3"
Unique ASCII string “PRI“
10B: --52
10C: --49
10D: --31
10E: --33
1
1
4
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 10–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of Optional features follows at
the end of the bit–30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
bit 5 Instant individual block locking supported
bit 6 Protection bits supported
bit 7 Pagemode read supported
bit 8 Synchronous read supported
bit 9 Simultaneous operations supported
Supported functions after suspend: read Array, Status, Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
VCC logic supply highest performance program/erase voltage
--E6
10F:
110: --03
111: --00
112: --00
bit 0 = 0
bit 1 = 1
bit 2 = 1
bit 3 = 0
bit 4 = 0
bit 5 = 1
bit 6 = 1
bit 7 = 1
bit 8 = 1
bit 9 = 1
113: --01
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
(P+9)h
1
2
bit 0 = 1
114: --03
115: --00
bit 0 = 1
bit 1 = 1
116: --18
Yes
(P+A)h
(P+B)h
Yes
Yes
1.8V
(P+C)h
(P+D)h
1
1
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
VPP optimum program/erase supply voltage
117: --90
9.0V
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
97
Intel StrataFlash® Wireless Memory (L18)
Table 26.
Protection Register Information
Offset(1)
Hex
Length
Description
P = 10Ah
(P+E)h
(Optional flash features and commands)
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection fields are available
Protection Field 1: Protection Description
This field describes user-available One Time Programmable
(OTP) Protection register bytes. Some are pre-programmed
with device-unique serial numbers. Others are user
programmable. Bits 0–15 point to the Protection register Lock
byte, the section’s first byte. The following bytes are factory
pre-programmed and user-programmable.
Add. Code Value
1
4
118: --02
2
(P+F)h
(P+10)h
(P+11)h
(P+12)h
119: --80
11A: --00
80h
00h
11B: --03 8 byte
11C: --03 8 byte
bits 0–7 = Lock/bytes Jedec-plane physical low address
bits 8–15 = Lock/bytes Jedec-plane physical high address
bits 16–23 = “n” such that 2n = factory pre-programmed bytes
bits 24–31 = “n” such that 2n = user programmable bytes
(P+13)h
(P+14)h
(P+15)h
(P+16)h
(P+17)h
(P+18)h
(P+19)h
(P+1A)h
(P+1B)h
(P+1C)h
10
Protection Field 2: Protection Description
Bits 0–31 point to the Protection register physical Lock-word
address in the Jedec-plane.
Following bytes are factory or user-programmable.
bits 32–39 = “n” ∴ n = factory pgm'd groups (low byte)
bits 40–47 = “n” ∴ n = factory pgm'd groups (high byte)
bits 48–55 = “n” \ 2n = factory programmable bytes/group
bits 56–63 = “n” ∴ n = user pgm'd groups (low byte)
bits 64–71 = “n” ∴ n = user pgm'd groups (high byte)
bits 72–79 = “n” ∴ 2n = user programmable bytes/group
11D: --89
11E: --00
11F: --00
120: --00
89h
00h
00h
00h
0
0
0
16
0
16
--00
--00
--00
121:
122:
123:
124: --10
--00
125:
126:
--04
Table 27.
Burst Read Information
Offset(1)
Hex
Length
Description
P = 10Ah
(Optional flash features and commands)
Add. Code Value
(P+1D)h
1
Page Mode Read capability
127: --03 8 byte
bits 0–7 = “n” such that 2n HEX value represents the number of
read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Synchronous mode read capability configuration 1
Bits 3–7 = Reserved
(P+1E)h
(P+1F)h
1
1
128: --04
129: --01
4
4
bits 0–2 “n” such that 2n+1 HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0–2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
(P+20)h
(P+21)h
(P+22)h
1
1
1
12A: --02
12B: --03
12C: --07
8
16
Cont
April 2005
98
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Partition and Erase-block Region Information
Table 28.
Offset(1)
P= 10Ah
See table below
Address
Description
Bot
Top
Bottom
Top
(Optional flash features and commands)
Len
(P+23)h (P+23)h Number of device hardware-partition regions within the device.
x = 0: a single hardware partition device (no fields follow).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.
1
12D: 12D:
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
99
Intel StrataFlash® Wireless Memory (L18)
Table 29.
Partition Region 1 Information
Offset(1)
P = 10Ah
See table below
Address
Description
Bot
Top
12E:
12F:
130:
Bottom
(P+24)h (P+24)h
(P+25)h (P+25)h
Top
(Optional flash features and commands)
Number of identical partitions within the partition region
Len
2
12E:
12F:
130:
(P+26)h (P+26)h Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
1
1
bits 4–7 = number of simultaneous Erase operations
(P+27)h (P+27)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+28)h (P+28)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+29)h (P+29)h Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
131:
132:
133:
131:
132:
133:
1
1
(P+2A)h (P+2A)h Partition Region 1 Erase Block Type 1 Information
4
134:
135:
136:
137:
138:
139:
13A:
134:
135:
136:
137:
138:
139:
13A:
(P+2B)h (P+2B)h
(P+2C)h (P+2C)h
(P+2D)h (P+2D)h
(P+2E)h (P+2E)h
(P+2F)h (P+2F)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Partition 1 (Erase Block Type 1)
Minimum block erase cycles x 1000
2
1
(P+30)h (P+30)h Partition 1 (erase block Type 1) bits per cell; internal ECC
bits 0–3 = bits per cell in erase region
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+31)h (P+31)h Partition 1 (erase block Type 1) page mode and synchronous
mode capabilities defined in Table 10.
1
4
13B:
13B:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
(P+32)h
(P+33)h
(P+34)h
(P+35)h
(P+36)h
(P+37)h
Partition Region 1 Erase Block Type 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(bottom parameter device only)
13C:
13D:
13E:
13F:
140:
141:
Partition 1 (Erase block Type 2)
2
1
Minimum block erase cycles x 1000
(P+38)h
Partition 1 (Erase block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
142:
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+39)h
Partition 1 (Erase block Type 2) pagemode and synchronous
mode capabilities defined in Table 10
1
143:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
April 2005
100
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Table 30.
Partition Region 2 Information
Offset(1)
See table below
P = 10Ah
Description
(Optional flash features and commands)
Address
Bot
Top
13C:
13D:
13E:
Bottom
Top
Len
2
(P+3A)h (P+32)h Number of identical partitions within the partition region
(P+3B)h (P+33)h
(P+3C)h (P+34)h Number of program or erase operations allowed in a partition
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
144:
145:
146:
1
1
1
1
(P+3D)h (P+35)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Program mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+3E)h (P+36)h Simultaneous program or erase operations allowed in other
partitions while a partition in this region is in Erase mode
bits 0–3 = number of simultaneous Program operations
bits 4–7 = number of simultaneous Erase operations
(P+3F)h (P+37)h Types of erase block regions in this Partition Region.
x = 0 = no erase blocking; the Partition Region erases in bulk
x = number of erase block regions w/ contiguous same-size
erase blocks. Symmetrically blocked partitions have one
blocking region. Partition size = (Type 1 blocks)x(Type 1
block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+
(Type n blocks)x(Type n block sizes)
147:
148:
149:
13F:
140:
141:
(P+40)h (P+38)h Partition Region 2 Erase Block Type 1 Information
4
14A:
14B:
14C:
14D:
14E:
14F:
150:
142:
143:
144:
145:
146:
147:
148:
(P+41)h (P+39)h
(P+42)h (P+3A)h
(P+43)h (P+3B)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(P+44)h (P+3C)h Partition 2 (Erase block Type 1)
(P+45)h (P+3D)h Minimum block erase cycles x 1000
(P+46)h (P+3E)h Partition 2 (Erase block Type 1) bits per cell
bits 0–3 = bits per cell in erase region
2
1
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+47)h (P+3F)h Partition 2 (erase block Type 1) pagemode and synchronous
mode capabilities as defined in Table 10.
1
4
151:
149:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
(P+40)h Partition Region 2 Erase Block Type 2 Information
14A:
14B:
14C:
14D:
14E:
14F:
150:
(P+41)h
(P+42)h
(P+43)h
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
(P+44)h Partition 2 (Erase block Type 2)
(P+45)h Minimum block erase cycles x 1000
(P+46)h Partition 2 (Erase block Type 2) bits per cell
bits 0–3 = bits per cell in erase region
2
1
bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
bits 5–7 = reserve for future use
(P+47)h Partition 2 (erase block Type 2) pagemode and synchronous
mode capabilities as defined in Table 10.
1
151:
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
101
Intel StrataFlash® Wireless Memory (L18)
Table 31.
Partition and Erase Block Region Information
Address
64 Mbit
128 Mbit
256 Mbit
–B
–T
–B
–T
–B
–T
12D:
12E:
12F:
130:
131:
132:
133:
134:
135:
136:
137:
138:
139:
13A:
13B:
--02
--01
--00
--11
--00
--00
--02
--03
--00
--80
--00
--64
--00
--02
--03
--02
--07
--00
--11
--00
--00
--01
--07
--00
--00
--02
--64
--00
--02
--03
--02
--01
--00
--11
--00
--00
--02
--03
--00
--80
--00
--64
--00
--02
--03
--02
--0F
--00
--11
--00
--00
--01
--07
--00
--00
--02
--64
--00
--02
--03
--02
--01
--00
--11
--00
--00
--02
--03
--00
--80
--00
--64
--00
--02
--03
--02
--0F
--00
--11
--00
--00
--01
--0F
--00
--00
--02
--64
--00
--02
--03
13C:
13D:
13E:
13F:
140:
141:
142:
143:
144:
145:
146:
147:
148:
149:
14A:
14B:
14C:
14D:
14E:
14F:
150:
151:
--06
--00
--00
--02
--64
--00
--02
--03
--07
--00
--11
--00
--00
--01
--07
--00
--00
--02
--64
--00
--02
--03
--01
--00
--11
--00
--00
--02
--06
--00
--00
--02
--64
--00
--02
--03
--03
--00
--80
--00
--64
--00
--02
--03
--06
--00
--00
--02
--64
--00
--02
--03
--0F
--00
--11
--00
--00
--01
--07
--00
--00
--02
--64
--00
--02
--03
--01
--00
--11
--00
--00
--02
--06
--00
--00
--02
--64
--00
--02
--03
--03
--00
--80
--00
--64
--00
--02
--03
--0E
--00
--00
--02
--64
--00
--02
--03
--0F
--00
--11
--00
--00
--01
--0F
--00
--00
--02
--64
--00
--02
--03
--01
--00
--11
--00
--00
--02
--0E
--00
--00
--02
--64
--00
--02
--03
--03
--00
--80
--00
--64
--00
--02
--03
April 2005
102
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Appendix D Additional Information
Order/Document
Number
Document/Tool
251903
290701
290702
290737
Intel StrataFlash® Wireless Memory (L30) Datasheet
Intel® Wireless Flash Memory (W18) Datasheet
Intel® Wireless Flash Memory (W30) Datasheet
Intel StrataFlash® Synchronous Memory (K3/K18) Datasheet
Migration Guide for 1.8 Volt Intel® Wireless Flash Memory (W18/W30) to 1.8 Volt Intel
StrataFlash® Wireless Memory (L18/L30), Application Note 753
251908
251909
Migration Guide for 3 Volt Synchronous Intel StrataFlash® Memory (K3/K18) to 1.8 Volt
Intel StrataFlash® Wireless Memory (L18/L30), Application Note 754
298161
297833
298136
Intel® Flash Memory Chip Scale Package User’s Guide
Intel® Flash Data Integrator (FDI) User’s Guide
Intel® Persistent Storage Manager User Guide
Notes:
1.
Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International
customers should contact their local Intel or distribution sales office.
Visit Intel’s World Wide Web home page at http://www.intel.com for technical documentation and
tools.
2.
3.
®
For the most current information on Intel StrataFlash memory, visit our website at http://
developer.intel.com/design/flash/isf.
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
103
Intel StrataFlash® Wireless Memory (L18)
Appendix E Ordering Information
E.1
Ordering Information for VF BGA Package
Figure 47.
Ordering Information for L18 in VF BGA
G E 2 8 F 6 4 0 L 1 8 T 8 5
Access Speed (ns)
85
Package Designator
Expanded Temperature
(-25 C to +85 C)
GE = leaded, 0.75mm VF BGA
PH = lead-free, 0.75mm VF BGA
Parameter Location
T = Top Parameter Blocking
B = Bottom Parameter Blocking
Product Line Designator
for all Intel® Flash products
Device Density
Product Family
L18 = Intel Strataflash® Wireless Memory
VCC = 1.7 V - 2.0 V
640 =x16 (64-Mbit)
128 =x16 (128-Mbit)
256 =x16 (256-Mbit)
V
CCQ = 1.35 V - 2.0 V or 1.7 V -2.0 V
April 2005
104
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Intel StrataFlash® Wireless Memory (L18)
E.2
Ordering Information for SCSP
Figure 48 and Table 32 show the ordering information for the Intel StrataFlash® wireless memory
in QUAD+ ballout products.
Figure 48.
Ordering Information for L18 in QUAD+
N Z 4 8 F 4 0 0 0 L 0 Y B Q 0
Package Designator
Device Details
NZ = Intel® SCSP, leaded
0 = Original version of the
products (refer to the latest
version of the datasheet
for details).
JZ = Intel® SCSP, lead-free
Product Line Designator
48F = Flash Memory only
Pinout Indicator
Q = QUAD+ ballout
B = x16D Performance
Flash Density
0 = No die
3 = 128-Mbit
4 = 256-Mbit
Parameter Location
B = Bottom Parameter
T = Top Parameter
Product Family
L = Intel StrataFlash® Wireless Family Memory
0 = No die
Voltage
Z = 3.0 V I/O
Y = 1.8 V I/O
Table 32.
L18 SCSP Package Ordering Information
I/O
Voltage
Flash Component
RAM Component
Package
Part Order Number
Density in Mbit and Density in Mbit and
Size
(mm)
(V)
Ball Type
Type
Family
Type
QUAD+
SCSP
NZ48F3000L0YTQ0
NZ48F3000L0YBQ0
128 L18
0
8x10x1.2
Leaded
QUAD+
SCSP
JZ48F3000L0YTQ0
JZ48F3000L0YBQ0
128 L18
256 L18
256 L18
0
0
0
8x10x1.2 Lead-Free
8x11x1.0 Leaded
8x11x1.0 Lead-Free
1.8
QUAD+
SCSP
NZ48F4000L0YTQ0
NZ48F4000L0YBQ0
QUAD+
SCSP
JZ48F4000L0YTQ0
JZ48F4000L0YBQ0
Datasheet
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
105
Intel StrataFlash® Wireless Memory (L18)
April 2005
106
Intel StrataFlash® Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
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