IFN105 [INTERFET]
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226;
| 型号： | IFN105 |
| 厂家： | 
INTERFET CORPORATION |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 开关 晶体管 |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D-2
01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
2SK17
IFN17
NJ16
N
2SK40
IFN40
NJ16
2SK59
IFN59
NJ16
2SK105
IFN105
NJ16
Japanese
InterFET
Process
Unit
N
N
N
Parameters
Conditions
Limit
Channel
Channel
Channel
Channel
V
Min
BVGSS
IG = – 1.0 µA
– 20
– 50
– 30
– 50
nA
Max
0.10
(–10 V)
1.0
(–30 V)
1.0
(–10 V)
1.0
(–30 V)
IGSS
V = ( ), V = Ø
GS
DS
V
–0.5/–6.0
(10 V)
–0.4/–5.0
(15 V)
–0.4/–5.0
(10 V)
–0.25/–4.5
(5.0 V)
V
V = ( ), ID = 1.0 nA
GS(off)
DS
Min/Max
mA
Min/Max
0.3/6.5
(10 V)
0.6/6.5
(15 V)
0.3/1.4
(10 V)
0.5/12
(5.0 V)
IDSS
gfs
V = ( ), V = Ø
DS
GS
mS
Typ
2.0
(10 V)
2.0
(15 V)
1.5
(10 V)
2.1
(5.0 V)
V = ( ), V = Ø
DS
GS
pF
Typ
4.0
(Ø) (Ø)
4.0
(Ø) (15 V)
4.0
(Ø) (10 V)
C
V = ( ), VDS = ( )
iss
GS
pF
Typ
1.2
(– 10 V) (Ø)
1.2
(Ø) (15 V)
1.0
(Ø) (10 V)
C
V = ( ), VDS = ( )
rss
GS
TO-226AA
SGD
TO-226AA
SGD
TO-226AA
SGD
TO-226AA
DGS
Package Configuration
Pin Configuration
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
相关型号：
IFN2106
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18
INTERFET
IFN2110
Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-18
INTERFET
IFN40
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226
INTERFET
IFN421
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78
INTERFET
IFN422
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78
INTERFET
©2020 ICPDF网 联系我们和版权申明