BUZ21 [INTERSIL]
19A, 100V, 0.100 Ohm, N-Channel Power MOSFET; 19A ， 100V ， 0.100 Ohm的N通道功率MOSFET
| 型号： | BUZ21 |
| 厂家： | 
Intersil |
| 描述： | 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ21
Semiconductor
Data Sheet
October 1998
File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
MOSFET
Features
• 19A, 100V
• r = 0.100Ω
[ /Title
(BUZ21)
/Subject
(19A,
100V,
0.100
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Ohm, N-
Channel
Power
MOS-
FET)
Formerly developmental type TA9854.
• Majority Carrier Device
Ordering Information
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
PART NUMBER
PACKAGE
BRAND
BUZ21
BUZ21
TO-220AB
NOTE: When ordering, use the entire part number.
/Author
()
Symbol
D
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
G
S
Packaging
JEDEC TO-220AB
TO-
220AB)
/Creator
()
SOURCE
DRAIN
GATE
/DOCIN
FO pdf-
mark
DRAIN (FLANGE)
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1
BUZ21
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
BUZ21
100
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
DGR
o
Continuous Drain Current, T = 55 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
19
A
C
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
75
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
W
mJ
D
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
230
AS
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
T
-55 to 150
E
C
J, STG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
55/150/56
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
-
MAX
-
UNITS
V
BV
I
100
DSS
D
GS
V
V
= V , I = 1mA (Figure 9)
2.1
3
4
V
GS(TH)
GS
DS
D
o
Zero Gate Voltage Drain Current
I
T = 25 C, V
J
= 100V, V = 0V
GS
-
-
-
-
4
-
-
-
-
-
-
-
20
250
1000
100
0.1
-
µA
µA
nA
Ω
DSS
GSS
DS
o
T = 125 C, V
= 100V, V
= 0V
GS
100
10
J
DS
DS
Gate to Source Leakage Current
I
V
= 20V, V
= 0V
GS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 9A, V
= 10V (Figure 8)
0.09
8
DS(ON)
D
GS
g
V
= 25V, I = 9A (Figure 11)
S
DS
CC
D
fs
t
V
= 30V, ID ≈ 3A, V
= 10Ω. (Figures 16, 17)
= 10V, R
GS
= 50Ω, R
L
30
45
ns
ns
ns
ns
pF
pF
pF
d(ON)
GS
Rise Time
t
50
75
r
Turn-Off Delay Time
t
170
80
220
110
2000
700
240
d(OFF)
Fall Time
t
f
Input Capacitance
C
V
= 25V, V = 0V, f = 1MHz (Figure 10)
GS
1500
450
150
≤ 1.67
≤ 75
ISS
DS
Output Capacitance
C
C
OSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RSS
o
R
C/W
θJC
θJA
o
R
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
19
75
2.1
-
UNITS
o
I
T
= 25 C
-
-
-
-
-
-
A
A
SD
C
o
I
T
= 25 C
-
SDM
C
o
V
T = 25 C, I
J
= 38A, V
GS
= 0V
1.5
200
0.25
V
SD
SD
SD
o
t
T = 25 C, I
= 19A, dI /dt = 100A/µs,
SD
ns
µC
rr
J
Q
-
V
= 30V
RR
R
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 25V, starting T = 25 C, L = 440µH, R = 50Ω, I
= 28A. (See Figures 14 and 15).
PEAK
DD
J
G
2
BUZ21
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
30
25
20
15
10
5
VGS ≥ 10V
0.6
0.4
0.2
0
0
0
50
100
150
0
25
50
75
100
125
150
o
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
P
DM
0.05
0.1
0.02
0.01
0
t
t
1
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
+ T
J
DM
θJC C
0.01
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
40
2
1
0
10
10
10
10V
20V
1.5µs
P
=
75W
D
V
= 80V
GS
10µs
V
= 7.5V
GS
30
20
10
0
100µs
V
= 7.0V
= 6.5V
GS
V
GS
1ms
OPERATION IN THIS
AREA LIMITED MAY BE
V
= 6.0V
GS
10ms
100ms
DC
BY r
DS(ON)
V
= 5.5V
= 5.0V
GS
V
GS
o
V
= 4.5V
= 4.0V
GS
T
T
= 25 C
C
J
V
= MAX RATED
GS
-1
10
0
1
2
3
10
10
, DRAIN TO SOURCE VOLTAGE (V)
10
10
0
2
4
6
8
10
12
V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
3
BUZ21
Typical Performance Curves Unless Otherwise Specified (Continued)
25
20
15
10
5
0.4
0.3
0.2
0.1
PULSE DURATION = 80µs
= 25V
PULSE DURATION = 80µs
= 5V 5.5V 6V
V
DS
V
6.5V
7V
7.5V
GS
o
T
= 25 C
J
8V
9V
10V
20V
0
0
0
5
10
0
10
20
I , DRAIN CURRENT (A)
30
40
V
, GATE TO SOURCE VOLTAGE (V)
GS
D
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.25
0.20
5
V
= 10V, I = 9A
D
V
= V , I = 1mA
GS
GS
PULSE DURATION = 80µs
DS
D
4
0.15
0.10
3
2
0.05
0
1
0
-50
0
50
100
o
150
-50
0
50
100
o
150
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
1
10
10
PULSE DURATION = 80µs
V
= 0, f = 1MHz
GS
V
= 25V
DS
8
6
o
T
= 25 C
J
C
ISS
0
10
C
OSS
4
2
0
C
-1
RSS
10
10
V
= 0V, f = 1MHz
GS
C
C
C
= C
+ C
GD
ISS
GS
= C
RSS
OSS
GD
≈ C
+ C
10
DS
GD
-2
0
20
30
40
0
5
10
15
20
25
V
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
4
BUZ21
Typical Performance Curves Unless Otherwise Specified (Continued)
2
15
10
5
10
I
= 21A
PULSE DURATION = 80µs
D
V
= 20V
= 80V
DS
o
T
= 150 C
J
1
0
10
10
V
DS
o
T
= 25 C
J
-1
0
0
10
0.5
1.0
1.5
2.0
2.5
3.0
0
10
Q
20
, TOTAL GATE CHARGE (nC)
g(TOT)
30
40
50
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
AS
V
VARY t TO OBTAIN
P
DD
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
0
I
0V
AS
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5
BUZ21
Test Circuits and Waveforms (Continued)
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
V
I
DS
g(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
6
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