BUZ45B [INTERSIL]
10A, 500V, 0.500 Ohm, N-Channel Power MOSFET; 10A ， 500V ， 0.500 Ohm的N通道功率MOSFET
| 型号： | BUZ45B |
| 厂家： | 
Intersil |
| 描述： | 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ45B
Semiconductor
Data Sheet
October 1998
File Number 2259.1
10A, 500V, 0.500 Ohm, N-Channel Power
MOSFET
Features
• 10A, 500V
• r = 0.500Ω
[ /Title
(BUZ45
B)
/Subject
(10A,
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
500V,
0.500
Formerly developmental type TA17435.
• Majority Carrier Device
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
BUZ45B
D
BUZ45B
TO-204AA
NOTE: When ordering, use the entire part number.
G
S
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
TO-
204AA)
/Creator
()
SOURCE (PIN 2)
GATE (PIN 1)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1
BUZ45B
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
BUZ45B
500
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
500
DGR
o
Continuous Drain Current (T = 35 C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
10
A
C
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
40
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
125
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
1.0
W/ C
o
-55 to 150
E
C
J
STG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
55/150/56
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
260
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
-
MAX
-
UNITS
V
BV
I
500
DSS
D
GS
V
V
= V , I = 1mA (Figure 9)
2.1
3
4
V
GS(TH)
GS
DS
D
o
Zero Gate Voltage Drain Current
I
T = 25 C, V
J
= 500V, V
GS
= 0V
= 0V
-
20
250
1000
100
0.50
-
µA
µA
nA
Ω
DSS
GSS
DS
o
T = 125 C, V
= 500V, V
= 0V
-
100
10
J
DS
DS
GS
Gate to Source Leakage Current
I
V
= 20V, V
-
GS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 5A, V
= 10V (Figure 8)
-
0.49
5
DS(ON)
D
GS
g
V
= 25V, I = 5A (Figure 11)
2.7
S
DS
CC
D
fs
t
V
= 30V, ID ≈ 2.9A, V = 10V,
= 50Ω, R = 10Ω. (Figures 14, 15)
-
-
-
-
-
-
-
50
75
ns
ns
ns
ns
pF
pF
pF
d(ON)
GS
R
GS
L
Rise Time
t
80
120
430
140
4900
400
170
r
Turn-Off Delay Time
t
330
110
3800
250
100
≤ 1
≤ 35
d(OFF)
Fall Time
t
f
Input Capacitance
C
V
= 25V, V
(Figure 10)
= 0V, f = 1MHz
GS
ISS
DS
Output Capacitance
C
C
OSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RSS
o
R
R
C/W
θJC
o
C/W
θJA
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
40
1.7
-
UNITS
o
I
T
= 25 C
-
-
-
-
-
-
-
A
A
SD
C
I
SDM
o
V
T = 25 C, I
J
= 20A, V
GS
= 0V
1.3
1200
12
V
SD
SD
SD
o
t
T = 25 C, I
= 10A, dI /dt = 100A/µs,
SD
ns
µC
rr
J
V
= 100V
R
Q
-
RR
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2
BUZ45B
Typical Performance Curves Unless Otherwise Specified
12
1.2
1.0
0.8
V
≥ 10V
GS
10
8
6
0.6
0.4
4
2
0.2
0
0
0
25
50
75
100
125
150
0
50
100
150
o
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
D =
0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
0
1
2
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
0.01
10
-5
-4
-3
10
-2
-1
10
0
1
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2
1
30
10
PULSE DURATION = 80µs
P
= 125W
20V
D
o
T
= 25 C
J
0.8µs
10µs
10V
8.0V
20
10
0
7.5V
10
V
= 7.0V
= 6.5V
= 6.0V
= 5.5V
= 5.0V
GS
100µs
V
GS
OPERATION IN THIS
AREA MAY BE LIMITED
V
1ms
GS
0
10
V
BY r
GS
DS(ON)
10ms
V
100ms
DC
GS
T
T
= MAX RATED
J
C
V
= 4.5V
= 4.0V
GS
o
= 25 C
V
-1
10
GS
0
1
2
3
10
10
, DRAIN TO SOURCE VOLTAGE (V)
10
10
0
10
V , DRAIN TO SOURCE VOLTAGE (V)
DS
20
30
40
V
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
3
BUZ45B
Typical Performance Curves Unless Otherwise Specified (Continued)
15
10
5
2.0
1.5
1.0
0.5
0
PULSE DURATION = 80µs
PULSE DURATION = 80µs
= 25V
V
DS
= 25 C
o
T
J
V
= 5V 5.5V 6V 6.5V 7V
GS
7.5V
8V
9V
10V
20V
0
0
10
20
30
0
5
10
V
, GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
GS
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
1.2
0.8
0.4
0
4
I
V
= 5A
= 10V
V
= V , I = 1mA
GS
D
DS
D
GS
PULSE DURATION = 80µs
3
2
1
0
-50
0
50
100
o
150
-50
0
50
100
o
150
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
1
7
10
PULSE DURATION = 80µs
V
= 25V
DS
= 25 C
o
C
6
5
T
ISS
J
0
10
4
3
2
1
0
C
C
OSS
-1
10
RSS
V
= 0, f = 1MHz
GS
C
C
C
= C
GS
+ C
ISS
GD
= C
= C
DS
RSS
OSS
GD
+ C
GS
-2
10
0
10
20
30
40
0
5
10
15
V
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
4
BUZ45B
Typical Performance Curves Unless Otherwise Specified (Continued)
2
1
0
15
10
5
10
10
10
I
= 14.4A
PULSE DURATION = 80µs
D
V
= 100V
DS
o
T
= 150 C
J
V
= 400V
DS
o
T
= 25 C
J
-1
10
0
0
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
V
I
DS
g(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
5
相关型号：
BUZ50A-E3044
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ50A-E3045
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ50A-E3046
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明